THERMOELECTRIC HEAT EXCHANGER

Abstract

A method for producing an electric and mechanically serial arrangement in a thermoelectric heat exchanger for temperature-controlling a fluid may include providing an electrically conductive strip. The method may also include providing the strip with a Peltier element including a plurality of p-doped p-semiconductors and a plurality of n-doped n-semiconductors so as to alternate with one another along the strip. Providing the strip with the Peltier element may include electrically contacting the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors by a connecting structure including a plurality of connecting elements. The method may further include arranging the plurality of connecting elements between the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors such that a respective connecting element of the plurality of connecting elements alternates with each of the the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to International Patent Application No. PCT/EP2016/066136, filed on Jul. 7, 2016, and German Patent Application No. DE 10 2015 213 294.3, filed on Jul. 15, 2015, the contents of both of which are hereby incorporated by reference in their entirety.

TECHNICAL FIELD

The present invention relates to a thermoelectric heat exchanger for temperature-controlling a fluid, in particular for a motor vehicle having a Peltier element. The invention, furthermore, relates to such a Peltier element.

BACKGROUND

For temperature-controlling fluids, in particular gases, heat exchangers are usually employed. Such heat exchangers allow heating and/or cooling the fluid. For this purpose, such heat exchangers can comprise temperature-control elements.

It is known to provide as such temperature-control elements electrically dissipative heating elements, which generate heat when an electric current flows through them. Such a heating element is known from WO 92/06570 A. Here, the heating element is designed as a cold conductor or a positive temperature coefficient heating element (PTC heating element) and is employed for heating an air flow.

Disadvantageous with such dissipative heating elements is that, in particular with no electrical resources available, they do not allow adequate heating and/or consume excessive resources.

From the prior art it is also known to employ temperature-control elements for temperature-controlling a fluid. The use of such a thermoelectric heating element in a heat exchanger is known from DE 10 2009 058 673 A1 and EP 2 518 424 A1. Here, a Peltier element is employed in each case, which by way of a suitable connection and application of an electric voltage has a cold side and a warm side. Apart from the heat transfer between the fluid and another fluid brought about by the temperature difference, a corresponding arrangement of the Peltier element allows realising a heat transfer achieved by way of the Peltier element, so that the total heat transfer is increased. Such Peltier elements have a multiplicity of differently doped semiconductors, which are connected to one another. In order to avoid a short circuit between the semiconductors, the semiconductors are electrically insulated on both sides by an electrically insulating coating and/or an electrically insulating plate. Such an electrical insulation regularly represents a thermal barrier which worsens a thermal exchange of the Peltier element. Since the electrical insulations, furthermore, are arranged on the sides of the Peltier element which in heat flow direction are located opposite, the heat exchange between the Peltier element and the fluid to be temperature-controlled and/or the other fluid or object is rendered more difficult.

In addition, such Peltier elements are designed rigid. During the operation of the Peltier element, a temperature difference occurs within the Peltier element, which leads to thermal stresses within the Peltier element. These thermal stresses can lead to a damage of the electrical insulation of the Peltier element and/or of the electrical connections between the semiconductors and/or short circuits, which can negatively affect the function of the Peltier element and in particular lead to the failure of the Peltier element.

SUMMARY

The present invention therefore deals with the problem of stating an improved or at least another embodiment for a thermoelectric heat exchanger comprising a Peltier element for temperature-controlling a fluid and for such a Peltier element, which is characterized in particular by an improved efficiency and/or resistance.

According to the invention, this problem is solved through the subjects of the independent claim(s). Advantageous embodiments are subject of the dependent claims.

With a thermoelectric heat exchanger, the present invention is based on the general idea of employing a Peltier element for the heat exchange between a fluid flowing through a flow space and a transfer space and arrange conductors for electrically connecting semiconductors of the Peltier element in at least one of the spaces, i.e. in the flow space and/or in the transfer space. Accordingly, the conductor arranged in the flow space is in particular exposed directly to the flowing fluid or the conductor arranged in the transfer space is involved in particular directly in the heat exchange with the transfer space. Through the arrangement of the conductors in the flow space or in the transfer space an improved heat exchange occurs between the Peltier element and the fluid or between the Peltier element and the transfer space. The consequence is an improved efficiency of the heat exchanger. In addition, arranging the conductors in the flow space or in the transfer space results in an improved movability of the Peltier element so that thermal stresses in particular can be better removed, thus resulting in an improved resistance of the heat exchanger.

According to the inventive idea, the heat exchanger thus comprises the through-flow space through which the fluid to be temperature-controlled can flow and the transfer space, which is fluidically separated from the flow space. During the operation, the transfer space serves for the heat transfer or the heat exchange with the Peltier element, which in turn exchanges heat with the flow space or the fluid flowing through the flow space. This results in a heat exchange between the transfer space and the fluid flowing through the flow space that is correspondingly intensified by the Peltier element. The Peltier element comprises a multiplicity of said semiconductors, wherein p-doped p-semiconductors and n-doped n-semiconductors are alternately arranged. The electrical connection of the semiconductors and thus said conductors are realised as a connecting structure. The connecting structure comprises connecting elements which in each case electrically connect two such semiconductors. In addition, the semiconductors and the connecting elements are mechanically connected to one another. The semiconductors and the connecting elements and thus the semiconductors and the connecting structure in this case form a mechanical and electrical series arrangement, in which in each case such a connecting element and such a semiconductor are alternately arranged.

The serial mechanical and electrical arrangement is realised in particular in such a manner that such a connecting element connects two consecutive semiconductors of the Peltier element both mechanically and also electrically. This means that along the arrangement, such a p-semiconductor, such a connecting element, such an n-semiconductor, such a connecting element, such a p-semiconductor etc. are arranged.

Furthermore, with the heat exchanger according to the invention, a simple integration of the Peltier element or of the arrangement in the heat exchanger is possible. In particular it is possible to arrange the Peltier element in the heat exchanger in particular before any joining method step may be necessary for producing the heat exchanger, in particular before a soldering of the heat exchanger. Because of this, the effort for producing the heat exchanger can be reduced and thus the manufacturing costs lowered. Because of the solution according to the invention, electrically insulating coatings, in particular electrically insulating sheets, for example ceramic sheets for electrically insulating the Peltier element can be omitted, so that the number of the components of the heat exchanger or of the Peltier elements are reduced and the production simplified. This also reduces the weight of the Peltier element and thus of the heat exchanger.

In advantageous embodiments, the serial arrangement is formed as a prefabricated assembly unit that can be inserted or mounted in the heat exchanger. Because of this, the production effort of the heat exchanger can be substantially reduced. In addition, other production steps for producing the heat exchanger can take place independently of the arrangement and thus of the Peltier element. Because of this, the heat exchanger can be produced in multiple variations and/or more cost-effectively. The arrangement formed as prefabricated assembly unit is configured in such a manner that the semiconductors can be inserted or mounted in the heat exchanger jointly with the connecting elements and thus with the connecting structure.

The fluidic separation between the flow space and the transfer space can generally be realised in any way.

For fluidically separating the flow space from the transfer space, a separating structure is preferentially employed which comprises multiple separating elements. Here, the separating structure is advantageously configured in such a manner that it thermally separates the flow space and the transfer space in addition to the fluidic separation. The separating elements can be produced in particular from materials having low thermal conductivity, for example from plastic. Practically, the separating elements are produced from an electrically non-conductive material.

It is conceivable that the separating elements run between adjacent semiconductors. In this case, the semiconductors together with the separating elements can form the separating structure. Here it is advantageous when the semiconductors are arranged between flow space and transfer space.

Advantageous embodiments provide that apart from the connecting elements and the semiconductors, the assembly unit also comprises the separating elements. This means that apart from the serial arrangement, the assembly unit can also comprise the separating structure. Because of this, the production of the heat exchanger is further simplified and the assembly effort in particular further reduced.

Advantageously, the fluid to be temperature-controlled flowing through the flow space is electrically non-conductive. To this end, the fluid to be temperature-controlled should not exceed a predetermined humidity proportion in particular when it is gaseous, for example air to be temperature-controlled. For limiting the humidity of the fluid it is conceivable to equip the heat exchanger with a dehumidification device, which dehumidifies the fluid upstream of the Peltier element.

Obviously, a liquid fluid can also be temperature-controlled with the heat exchanger according to the invention. Such temperature-control is possible in particular when the liquid is electrically non-conductive or does not exceed a predetermined electric conductivity.

Preferred embodiments provide that the connecting elements are designed as identical parts. Because of this, the production effort of the Peltier element and thus of the heat exchanger can be reduced and/or the Peltier element or the heat exchanger produced more cost-effectively.

The heat exchanger according to the invention can be employed in any application for temperature-controlling such a fluid. It is conceivable, in particular, to employ the heat exchanger in a motor vehicle in order to temperature-control such a fluid flowing through the motor vehicle. In particular, the heat exchanger can be employed as heater, in particular auxiliary heater, for temperature-controlling such a fluid. Here, the fluid can in particular be air which is fed to an interior of the motor vehicle. Consequently, the heat exchanger in this case is employed as an air conditioning device of the motor vehicle or as part of such an air conditioning device.

The heat exchange in the transfer space with the Peltier element can take place with a further second fluid, which is described as temperature-control fluid in the following. Here, the temperature-control fluid can flow through the transfer space and can accordingly be described as second flow space. Here, the at least one connecting element arranged in the temperature-control space can be directly exposed to the temperature-control fluid. The temperature-control fluid is preferentially a fluid other than the fluid flowing through the flow space. The temperature fluid in this case can be a gas or a liquid.

When using the heat exchanger in a motor vehicle, the temperature-control fluid can be in particular cooling water of the motor vehicle.

It is preferred when at least one such connecting element, which is arranged in the flow space, can be flowed through by the fluid. Because of this, an enlargement of the area of the connecting element exchanging heat with the fluid and thus an improved heat exchange and consequently an improved efficiency of the heat exchanger materialises.

The same applies to such a connecting element arranged in the temperature-control space or in the second flow space through which temperature-control fluid can preferentially flow, in order to enlarge the area exchanging heat with the temperature-control fluid and thus contribute to an improved efficiency of the heat exchanger.

The heat exchange of the Peltier element with the transfer space can furthermore take place with a solid body arranged in the transfer space. Here it is preferred when at least one such connecting element is connected to the solid body in a heat-transferring manner.

It is advantageous when at least one such connecting element lies flat against the solid body. Because of this, an enlargement of the heat-exchanging area between the connecting element and the solid body and/or an improved degree of heat exchange between the connecting element and the solid body materialises, so that the heat exchange between the solid body and the connecting element is increased and the efficiency of the heat exchanger improved.

Thus, the solid body can serve as a heat source or heat sink, from which the Peltier element draws heat or to which the Peltier element supplies heat.

The solid body can generally be designed in any way provided a heat exchange between the solid body and the at least one connecting element is possible.

It is conceivable, for example, to employ electrically insulating solid bodies. Because of this, no short circuit between the connecting elements or the semiconductors occurs so that an operation of the Peltier element is not negatively affected.

It is also conceivable to employ an electrically conductive solid body and insulate the same electrically by suitable means in such a manner that a short circuit between the connecting elements or the semiconductors is prevented. Such a means can in particular be an electrically insulating coating, with which the solid body is provided in particular on the outside for electrically insulating at least two such connecting elements.

Preferred embodiments provide that the surface of a connecting element lying flat against the solid body facing away from the solid body is thermally separated relative to the flow space by at least one such separating element. Because of this, a direct heat exchange between this connecting element and the flow space is prevented or at least reduced. As a consequence, an improved heat exchange of the connecting element and accordingly of the Peltier element with the solid body and consequently an improved efficiency of the heat exchanger materialises.

In principle, the solid body can be designed in any way. It is conceivable, in particular, that the solid body is solid.

It is also conceivable to form the solid body as a hollow body. In such a case, the solid body can be flowed through, wherein the through-flow contributes to the temperature-control of the hollow body. It is conceivable, in particular, that the solid body can be flowed through by the temperature-control fluid. In this case, the solid body is thus formed in particular as a tube or tube section for the temperature-control fluid.

It is preferred when at least one such connecting element, advantageously all connecting elements, are formed as heat exchange elements for the direct heat exchange with the fluid, the temperature-control fluid or the solid body. This means that the connecting elements in particular do not have any thermally insulating coating and such like, which form a thermal barrier for the heat exchange with the connecting element.

In principle, the respective connecting element can be connected to the associated semiconductors in any way.

Advantageous versions provide for at least one such connecting element lying flat against at least one of the associated semiconductors. Because of this, a heat-exchanging area between the connecting element and the at least one associated semiconductor is enlarged and the efficiency of the heat exchanger thus increased.

In preferred embodiments, at least one such connecting element is formed elastically for offsetting thermal stresses. The elastic design of the connecting element can be realised through a suitable material selection of the connecting element and/or by a suitable shape of the connecting element.

It is conceivable, in particular, to produce at least one such connecting element from a sheet metal and thus realise the same as a sheet-metal part. This makes possible a simple and cost-effective production of the Peltier element.

It is conceivable, in particular, to form at least one such connecting element as a fin projecting into the flow space or into the transfer space. Because of this, the heat exchange between the connecting element and the fluid or between the connecting element and the temperature-control fluid is improved and the efficiency of the heat exchanger thus increased.

The serial arrangement is preferentially produced from an electrically conductive strip, in particular from a sheet metal. The strip is preferentially produced from an electrically conductive material, for example from aluminium. Here, the strip can be initially provided in particular as a continuous strip and subsequently provided alternately with p-semiconductors and n-semiconductors, which are arranged along the strip spaced from one another. In the process, said connecting elements are created between the semiconductors. Providing the strip with the semiconductors is advantageously effected in such a manner that the semiconductors are connected to the strip. Here, the semiconductors can be directly attached to the strip. It is conceivable, in particular, to coat the strip with the semiconductors. To this end, the semiconductors can be applied to the strip during the course of a sputter-coating.

It is likewise conceivable to attach the semiconductors on a suitable substrate, which in turn are attached to the strip. For this purpose, any substrates can be employed on which the respective semiconductor can be attached. Preferred are electrically conductive, in particular metallic substrates. Conceivable, for example, are nickel-containing substrates, for example substrates on a nickel base. Applying the semiconductors to the substrates can take place in any way. It is conceivable, in particular to coat the substrates with the semiconductors. In particular, the semiconductors can be applied to the substrates by a sputter-coating. The use of substrates forms the advantage that the provision with the semiconductors can take place in a simplified manner compared with the strip since the substrates in particular have smaller dimensions than the strip. Additionally because of this, attention in terms of the application of the semiconductors has to be saliently attached to the substrates. Because of this, the strip can be produced from a more cost-effective material. The application of the semiconductors can also take place independently of the strip, for example under suitable thermodynamic conditions, i.e. also at low pressures and/or under a protective atmosphere and/or in a room with little dirt, in particular in a clean room.

Applying the semiconductors to the substrates is preferentially effected prior to applying the substrate to the strip. This means that substrates provided with such semiconductors are attached to the strip.

The substrates can be attached to the strip in any way. Conceivable are thermally bonded and/or form-fit connections, in particular versions with which the substrate is glued, soldered, welded, clamped, crimped or brazed to the strip. Here, the substrates and the strip can be suitably connected electrically for connecting the semiconductors. It is also conceivable to electrically contact the semiconductors directly with the strip.

For realising the electrical serial arrangement of the semiconductors, a suitable electrical interruption of the strip can take place. To this end, the strip can be initially provided with recesses or interruptions in which the semiconductors or the corresponding substrates are then provided. The semiconductors can thus be provided in particular in the electrical interruptions of the strip.

It is to be understood that the respective semiconductor cannot only comprise a single semiconductor element but also multiple equally doped semiconductor elements.

Once the strip has been provided with the semiconductors, the strip can be cut to a desired length in order to obtain the serial arrangement in a desired length. Obviously, cutting the strip to the desired length can also take place before providing the strip with the semiconductors.

The arrangement can have any shape. In particular, the connecting structure and thus the connecting elements can have any shape.

Here it is conceivable to form the strip in accordance with the desired shape of the arrangement. Forming the strip in this case can take place prior to providing the strip with the semiconductors or after providing the strip with the semiconductors. It is also conceivable to form the strip partly before the provision with the semiconductors and partly after the provision with the semiconductors. Forming takes place for example by punching and/or gathering.

Further important features and advantages of the invention are obtained from the subclaims, from the drawings and from the associated figure description by way of the drawings.

It is to be understood that the features mentioned above and still to be explained in the following cannot only be used in the respective combination stated but also in other combinations or by themselves without leaving the scope of the present invention.

Preferred exemplary embodiments of the invention are shown in the drawings and are explained in more detail in the following description wherein same reference characters relate to same or similar or functionally same components.

BRIEF DESCRIPTION OF THE DRAWINGS

It shows, in each case schematically,

FIG. 1 a section through a thermoelectric heat exchanger of a motor vehicle,

FIG. 2 the section from FIG. 1 with another exemplary embodiment of the heat exchanger,

FIG. 3 the section from FIG. 2 with a further exemplary embodiment of the heat exchanger,

FIGS. 4 to 8 in each case different exemplary embodiments of a Peltier element of a heat exchanger,

FIG. 9 a method step during the production of an arrangement of the heat exchanger,

FIG. 10 the step from FIG. 9 with another exemplary embodiment,

FIG. 11 a lateral view of the arrangement,

FIGS. 12 to 14 view from FIGS. 4 to 8 each with a further exemplary embodiment.

DETAILED DESCRIPTION

FIG. 1 shows a thermoelectric heat exchanger 1 of a motor vehicle 2 which is not otherwise shown. The heat exchanger 1 comprises a flow space 3 and a transfer space 4, which substantially extend parallel. The flow space 3 can be flowed through by a fluid to be temperature-controlled, while the transfer space 4 can be flowed through by another fluid, which in the following is described as temperature-control fluid. In addition, the heat exchanger 1 comprises a Peltier element 5 which, along the flow space 3 or the transfer space 4 comprises a multiplicity of alternately arranged p-doped p-semiconductors 6 and n-doped n-semiconductors 7. The semiconductors 6, 7 are electrically contacted to one another by means of a connecting structure 8 and connected in series. To this end, the connecting structure 8 comprises a multiplicity of electrically conductive elements 9, wherein the respective connecting element 9 electrically contacts such a p-semiconductor 6 with the adjacent n-semiconductor 7. A separating structure 10 separates the flow space 3 and the transfer space 4 fluidically and thermally. To this end, the separating structure 10 comprises electrically insulating separating elements 11, which run between the adjacent semiconductors 6, 7. The semiconductors 6, 7 in this case are arranged between the flow space 3 and the transfer space 4 so that together with the separating elements 11 they form the separating structure 10.

Along the flow space or the transfer space 4, such a connecting element 9 is alternately arranged in the flow space 3 and in the transfer space respectively. Because of this, the connecting elements 9 are directly exposed to the flow of the fluid in the flow space 3 or the flow of the temperature-control fluid in the transfer space 4. Because of this, a direct heat exchange of the connecting elements 9 with the fluid or the temperature-control fluid occurs. This means that the connecting elements 9 or the connecting structure 8 serve both for the electrical connection between the semiconductors 6, 7 and are also employed for the heat exchange. This substantially improves the efficiency of the heat exchanger 1.

The connecting elements 9 and the semiconductors 6, 7 in this case form a serial arrangement 12, in which in each case such a connecting element 9 and such a semiconductor 6, 7 are alternately arranged and connected both electrically and also mechanically to one another. Here, the arrangement 12 is formed as an assembly unit 13 which as such can be inserted or mounted in the heat exchanger. This means that the arrangement 12 is realised as an assembly unit 13 comprising the connecting elements 9 or the connecting structure 8 and the semiconductors 6, 7, which can be separately mounted in the heat exchanger 1. When mounting the assembly unit 13 in the heat exchanger 1, the assembly unit 13 is mechanically and/or electrically connected to the heat exchanger in the process. It is also conceivable that the separating structure 10, i.e. in particular also the separating elements 11, belong to the assembly unit 13.

The flow space 3 and the transfer space 4 are delimited by a wall 14 on the side located opposite the separating elements 11.

When applying an electric voltage to the Peltier element 5, for example by way of a voltage source 15 and electrical cables 16, a first temperature side 17, which in the shown example faces the flow space 3 and which is arranged in the flow space 3, and a second temperature side 18, which in the shown example faces the transfer space 4 and which is arranged in the transfer space 4, are created on the Peltier element 5 due to the Peltier effect. By suitably selecting the applied voltage, the first temperature side 17 can have a higher temperature than the second temperature side 18 or vice versa. In the shown example, the voltage is applied in such a manner that the first temperature side 17 has a higher temperature than the second temperature side 18. The first temperature side 18 is thus a warm side 19 of the Peltier element, while the second temperature side 18 is a cold side 20 of the Peltier element 5. Accordingly, heat is fed to the fluid flowing through the flow space 3 while heat is extracted from the temperature-control fluid flowing through the transfer space 4 and the temperature-control fluid is thus cooled. Here, the Peltier effect ensures that the heat transferred from the temperature-control fluid to the fluid flowing through the flow space 3 is greater than with a direct heat transfer.

The connecting elements 9 are produced from a sheet metal, in particular aluminium sheet metal, and are formed elastically for offsetting thermal stresses. This means that thermal stresses within the Peltier element 5 can be offset by a suitable deformation of the elastically formed connecting elements 9.

The respective connecting element 9 comprises legs 21 projecting from the associated semiconductors 6, 7 in opposite directions and a base 22 connecting the legs 21 on the side located opposite the associated semiconductors 6, 7. Here, the connecting elements 9 arranged in the flow space 3 can be flowed through by the fluid flowing through the flow space 3. Because of this, an improved heat exchange between the connecting elements 9 and the fluid occurs. Similar applies to the connecting elements 9 arranged in the transfer space 4, which can be flowed through by the temperature-control fluid and thus make available an enlarged area for the heat exchange with the temperature-control fluid. In FIG. 1 it is evident, furthermore, that all connecting elements 9, i.e. both the connecting elements 9 arranged in the flow space 3 and also the connecting elements 9 arranged in the transfer space 4 are designed as identical parts.

In FIG. 2, another exemplary embodiment of the heat exchanger 1 is shown. In contrast with the exemplary embodiment shown in FIG. 1, a solid body 23 is arranged in the transfer space 4 in FIG. 2, which exchanges heat with the Peltier element 5. Here, the connecting elements 9 arranged in the transfer space 4 are in heat-exchanging contact with the solid body 24. To this end, the connecting elements 9 in the shown example lie flat against the solid body 23 with their bases 22. In the representation, the connecting elements 9 are arranged spaced from the solid body 23 for the sake of clarity. Because of this, an improved heat exchange between the solid body 23 and the connecting elements 9 arranged in the transfer space 4 and thus an improved heat exchange between the solid body 23 and the Peltier element 5 occurs. In FIG. 2 it is evident that the connecting elements 9 arranged in the transfer space 4 have smaller or shorter legs 21 than the connecting elements 9 arranged in the flow space 3. In the shown example, the voltage is applied so that the sides of the semiconductor 6, 7 facing the solid body 23 are the cold side. Accordingly, heat is discharged from the solid body during the operation of the heat exchanger 1 and fed to the fluid flowing through the flow space 3. In order to avoid a short circuit between the connecting elements 9 arranged in the transfer space 4 the solid body 23 can be electrically insulating. It is also conceivable that the solid body 23 is electrically conductive and for the electrical insulation relative to the connecting elements 9, comprises an electrically heating insulation coating that is not shown. As is evident in FIG. 2, furthermore, the surface of the connecting elements 9 lying flat against the solid body 23 facing away from the solid body 23 is thermally separated relative to the flow space 3 in each case by means of such a separating element 11. By way of this, a thermal separation of the corresponding connecting elements 9 from the flow space preferably takes place as well in order to prevent or at least reduce a direct heat exchange of the relevant connecting elements 9 with the fluid flowing through the flow space 3.

The solid body 23 shown in FIG. 2 is embodied solid as indicated by the hatched representation. The solid body 23 of solid design can be a wall of a component to be temperature-controlled and which is not otherwise shown, in particular of the motor vehicle 2.

In FIG. 3, another exemplary embodiment of the heat exchanger 1 is shown, which substantially differs from the exemplary embodiment shown in FIG. 2 in that the solid body 23 is designed as a hollow body 24. The hollow body 24 in this case can be flowed through by the temperature-control fluid and thus delimit a corresponding flow space 25 for the temperature-control fluid, wherein this flow space 25 in the following is described as second flow space 25. Thus, the temperature-control fluid flows through the second flow space 25 as a result of which the solid body 23 designed as hollow body 24 assumes a corresponding temperature. The solid body 23 thus heated or cooled is in heat-transferring contact with the Peltier element 5 via the connecting elements 9 arranged in the transfer space 4 in order to temperature-control the fluid flowing through the flow space 3. The solid body 23 designed as hollow body 24 can thus be in particular a tube 26.

In FIGS. 4 to 8, different exemplary embodiments of the Peltier element 5 or of the arrangement 12 are shown, wherein in each case such a semiconductor 6, 7 including connecting elements 9 is visible.

In the exemplary embodiment shown in FIG. 4, the semiconductor 6, 7 is arranged or attached with offset between the connecting elements 9. In the exemplary embodiment shown in FIG. 5, the semiconductor 6, 7 is introduced or arranged between the connecting elements 9 without offset.

FIG. 6 shows an exemplary embodiment in which the semiconductor 6, 7 is attached between the connecting elements 9 without offset, wherein the connecting elements 9 are directly connected to one another or formed continuously. Here, the connecting elements 9 can be formed in particular in one piece, i.e. for example material-uniformly.

FIG. 7 shows an exemplary embodiment which substantially differs from the example shown in FIG. 6 in that the semiconductor 6, 7 is designed bent. In the shown example, the semiconductor 6, 7 in this case has a semi-circular cross section. A curvature radius of the semiconductor 6, 7 is adapted to the relevant circumstances, in particular an improved production.

FIG. 8 shows an exemplary embodiment in which the semiconductor 6, 7 is arranged between the connecting elements 9 without offset. Here, a stabilisation element 27 for stabilising the connecting elements 9 and/or for supporting the connecting elements 9 on the outside is additionally attached to the connecting elements 9. The stabilisation element 27 is preferentially electrically non-conductive, in particular electrically insulating. The stabilisation element 27 can be designed as a non-conductive stabilisation coating 28 applied to the connecting elements 9.

FIG. 9 shows a step during a preferred production of the arrangement 12 or of the Peltier element 5. Here, a strip 29, in particular a continuous strip 30, in particular of aluminium, is initially provided. Along the strip 29, the strip 29 is alternately provided with such a p-semiconductor 6 and an n-semiconductor 7 in each case at predetermined distances. Because of this, the connecting elements 9 are created between the semiconductors 6, 7. In the exemplary embodiment shown in FIG. 9, the respective semiconductor 6, 7 comprises an associated semiconductor element 31, 32.

FIG. 10 shows an exemplary embodiment in which the strip 29 is provided with such semiconductors 6, 7 which comprise multiple such semiconductor elements 31, 32 doped in the same manner. This means that the respective p-semiconductor 6 comprises multiple p-doped p-semiconductor elements 31 while the respective n-semiconductor 7 comprises multiple n-doped n-semiconductor elements 32.

In both exemplary embodiments, cutting the strop 29 to a desired length can take place. Here, cutting the strip 29 to the desired length can take place prior to providing the strip with the semiconductor 6, 7 or after providing the strip 29 with the semiconductors 6, 7.

FIG. 11 shows a further method step for producing the Peltier element 5 for the arrangement 12, in which the strip 29 provided with the semiconductors 6, 7 is formed into the desired shape. In FIG. 11, this forming takes place in such a manner that the Peltier element 5 or the arrangement 12 of the heat exchanger 1 shown in FIG. 1 is created. Through a corresponding different arrangement of the semiconductors 6, 7 and forming, the Peltier element 5 or the corresponding arrangement 12 shown in FIGS. 2 and 3 can also be produced.

Here it is also conceivable to carry out the forming of the strip prior to providing the strip 29 with the semiconductors 6, 7.

The arrangements 12 shown in FIGS. 9 to 11 are such assembly units 13. Here it is conceivable to provide the respective arrangement 12 or assembly unit 13 with the separating structure 10 or the separating elements 11 so that the assembly unit 13 also comprises the separating structure 12 or the separating elements 11.

Providing the strip with the semiconductors 6, 7 and forming the strip 29 can likewise be effected in such a manner that the exemplary embodiments shown in FIG. 4 to 8 are thereby created.

In the exemplary embodiments shown in FIGS. 4 to 8 and 9 and 10 the semiconductors 6, 7 are directly applied to the strip 29 or the connecting elements 9. This is effected for example by a suitable coating of the strip 29 or of the connecting elements 9 with the semiconductors 6, 7. For this purpose, a sputter-coating can be employed for example.

FIGS. 12 to 14 show further exemplary embodiments in the case of which the semiconductors 6, 7 are applied to an associated substrate 33 which is applied to the strip 29 or which is connected to the connecting elements 9. This means that the respective semiconductor 6, 7 is applied to such an associated substrate 33 which is connected to the strip 29 or the associated connecting elements 9. The substrate 33 consists of an electrically conductive material. Here, the substrates 33 are initially provided with the semiconductors 6, 7 and the substrates 33 provided with the semiconductors 6, 7 subsequently applied to the strip 29 or connected to the associated connecting elements 9, in particular glued, soldered, welded and the like. Providing the substrates 33 with the semiconductors 6, 7 is effected by a coating of the substrates 33, in particular by a sputter-coating.

Prior to being provided with the semiconductors 6, 7 or the substrates 33, the strip 29 can be provided with electrical interruptions in order to realise the electrical serial arrangement of the semiconductors 6, 7. To this end, the strip 29 can be provided with suitable recesses or grooves which are not visible, in which the semiconductors 6, 7 or the substrates 33 are then provided, in particular introduced.

In FIG. 12 an exemplary embodiment is shown, in the case of which the semiconductor 6, 7 substantially covers the substrate 33 in one direction while the substrate 33 is larger than the semiconductor 6, 7 perpendicularly thereto.

In FIG. 13, the substrate 33 is larger than the semiconductor 6, 7 in both directions. In the exemplary embodiments shown in FIGS. 12 and 13, the substrates 33 cover the strip 29 or the connecting elements 9 in one direction. In these examples, the substrate 33 can mechanically and/or electrically connect the connecting elements 9 to one another.

In the exemplary embodiment shown in FIG. 14, the substrate 33 covers the strip 29 or the connecting elements 9 merely partly. The substrate 33 in this case is larger than the semiconductor 6, 7 in both directions.

Claims

1. A method for producing an electric and mechanically serial arrangement in a thermoelectric heat exchanger for temperature-controlling a fluid, comprising:

providing an electrically conductive strip; and

providing the strip with a Peltier element including a plurality of p-doped p-semiconductors and a plurality of n-doped n-semiconductors so as to alternate with one another along the strip, wherein providing the strip with the Peltier element includes electrically contacting the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors by a connecting structure including a plurality of connecting elements, the plurality of connecting elements each electrically contacting a respective one of the plurality of p-doped p-semiconductors and a respective one of the plurality of n-doped n-semiconductors, and arranging the plurality of connecting elements between the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors such that a respective connecting element of the plurality of connecting elements alternates with each of the the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors, wherein at least one of the plurality of connecting elements is arranged in at least one of a flow space through which a fluid to be temperature controlled is flowable and a transfer space fludicially separated from the flow space.

2. The method according to claim 1, further comprising cutting the strip to a desired length one of (i) following providing the strip with the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors and (ii) prior to providing the strip with the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors.

3. The method according to claim 1, wherein providing the strip includes forming the strip one of (i) after providing the strip with the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors and (ii) before providing the strip with the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors.

4. A thermoelectric heat exchanger for temperature-controlling a fluid, comprising:

a flow space through which a fluid to be temperature-controlled is flowable;

a transfer space fluidically separated from the flow space; and

a Peltier element including a plurality of p-doped p-semiconductors and a plurality of n-doped n-semiconductors arranged in an alternating relationship with one another, the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors electrically contacted by a connecting structure including a plurality of connecting elements, the plurality of connecting elements each electrically contacting a respective p-semiconductor of the plurality of p-doped p-semiconductors and a respective n-semiconductor of the plurality of n-doped n-semiconductors;

wherein at least one of the plurality of connecting elements is arranged in at least one of the flow space and the transfer space; and

wherein the plurality of p-doped p-semiconductors, the plurality of n-doped n-semiconductors and the plurality of connecting elements form an electrical and mechanical serial arrangement such that one of the plurality of connecting elements is arranged between each of the plurality of p-doped p-semiconductors and the plurality of n-doped n-semiconductors.

5. The heat exchanger according to claim 4, wherein the arrangement is structured as a prefabricated assembly unit.

6. The heat exchanger according to claim 4, further comprising a separating structure including a plurality of separating elements, the separating structure fluidically and thermally separating the flow space and the transfer space.

7. The heat exchanger according to claim 6, wherein the plurality of p-doped p-semiconductors and the n-doped n-semiconductors together with the plurality of separating elements provide the separating structure.

8. The heat exchanger according to claim 6, wherein the arrangement is structured as a prefabricated unit, the assembly unit including the plurality of separating elements.

9. The heat exchanger according to claim 4, wherein a temperature-control fluid is flowable through the transfer space such that the temperature-control fluid exchanges heat with the Peltier element.

10. The heat exchanger according to claim 4, further comprising a solid body arranged in the transfer space configured to exchange heat with the Peltier element.

11. The heat exchanger according to claim 10, wherein at least one of the plurality of connecting elements lies flat against the solid body.

12. The heat exchanger according to claim 10, wherein at least one of:

the solid body is electrically insulating; and

the solid body includes an electrically insulating coating.

13. The heat exchanger according to claim 11, wherein a surface facing away from the solid body of the at least one connecting element that lies flat against the solid body is thermally separated relative to the flow space by at least one of the plurality of separating elements.

14. The heat exchanger according to claim 10, wherein one of:

the solid body is solid; and

the solid body is structured as a hollow body through which the temperature-control fluid is flowable.

15. The heat exchanger according to claim 4, wherein at least one of the plurality of connecting elements is structured elastically for offsetting thermal stresses.

16. The heat exchanger according to claim 6, wherein a temperature-control fluid is flowable through the transfer space such that the temperature-control fluid exchanges heat with the Peltier element.

17. The heat exchanger according to claim 16, further comprising a solid body arranged in the transfer space configured to exchange heat with the Peltier element.

18. The heat exchanger according to claim 6, further comprising a solid body arranged in the transfer space configured to exchange heat with the Peltier element.

19. The heat exchanger according to claim 18, wherein at least one of the plurality of connecting elements lies flat against the solid body.

20. The heat exchanger according to claim 19, wherein a surface facing away from the solid body of the at least one connecting element that lies flat against the solid body is thermally separated relative to the flow space by at least one of the plurality of separating elements.