Image forming apparatus having a low resistance support member
An image forming apparatus includes a substrate, an electron-emitting device, a wiring electrode for applying an input signal to the electron-emitting device, and an image forming member to which an electron emitted from the electron-emitting device is irradiated. An acceleration electrode is provided opposite to the substrate, and a potential defining electrode is provided between the acceleration electrode and the substrate. A second support member connects the potential defining electrode and the acceleration electrode, and a first support member connects the wiring electrode and the potential defining electrode. The second support member has a semiconductive material surface, and the first support member has a resistance greater than that of the second support member by ten times or more.
Latest Canon Patents:
- MEDICAL INFORMATION PROCESSING APPARATUS AND METHOD
- MEDICAL INFORMATION PROCESSING APPARATUS, MEDICAL INFORMATION PROCESSING METHOD, RECORDING MEDIUM, AND INFORMATION PROCESSING APPARATUS
- MEDICAL IMAGE PROCESSING APPARATUS, MEDICAL IMAGE PROCESSING METHOD, AND MODEL GENERATION METHOD
- Inkjet Printing Device for Printing with Ink to a Recording Medium in the Form of a Web
- MEDICAL INFORMATION PROCESSING APPARATUS AND MEDICAL INFORMATION PROCESSING METHOD
Claims
1. An image forming apparatus comprising:
- a substrate;
- an electron-emitting device including a pair of electrodes, said device emitting an electron by a signal applied via said pair of electrodes;
- a wiring electrode, provided on said substrate, for applying an input signal to said electron-emitting device;
- an image forming member to which an electron emitted from said electron-emitting device is irradiated;
- an acceleration electrode provided opposite to said substrate;
- potential-defining means provided between said acceleration electrode and said substrate, said potential-defining means being independent from said pair of electrodes;
- a second support member connected to said potential-defining means and said acceleration electrode; and
- a first support member connected to said wiring electrode and said potential-defining means,
- wherein said second support member has a semiconductive material surface,
- and wherein said first support member has resistance greater than that of said second support member by ten times or more,
- further wherein a predetermined potential is applied to said potential-defining means.
3. The image forming apparatus according to claim 1, further comprising an electron-beam source including said electron-emitting devices, m scan-signal wiring electrodes and n information-signal wiring electrodes, each electron-emitting device being connected with each scan-signal wiring electrode and each information-signal wiring electrode, layered via an insulating layer therebetween, on said substrate,
- and wherein said first support member is provided on at least one of the m scan-signal wiring electrodes and n information-signal wiring electrodes,
- further wherein said potential-defining means is provided on said first support member.
4. The image forming apparatus according to claim 1, wherein said potential-defining means respectively focuses an electron beam emitted from said electron-emitting device.
5. The image forming apparatus according to claim 1, wherein a voltage Vc applied to said potential-defining means satisfies the relations:
- Vc: a voltage applied to said potential-defining means,
- Vf: a voltage applied to said electron-emitting device,
- Va: voltage applied to said acceleration electrode,
- Tc: a thickness of said potential-defining means,
- H: a distance between said electron-emitting device and said acceleration electrode,
- h: a distance between said electron-emitting device and said potential-defining means.
6. The image forming apparatus according to claim 1, wherein said electron-emitting device is a cold cathode electron-emitting device.
7. The image forming apparatus according to claim 1, wherein said electron-emitting device is a surface-conduction emission type electron-emitting device.
8. The image forming apparatus according to claim 1, wherein said electron-emitting device is a flat field emission type electron-emitting device.
9. The image forming apparatus according to claim 1, wherein said potential-defining means is an ion blocking member which covers above an electron emitting portion of said electron-emitting device.
10. The image forming apparatus according to claim 1, wherein said second support member is a plate.
11. An image forming apparatus comprising:
- a substrate;
- an electron-emitting device including a pair of electrodes, said device emitting an electron by a signal applied via said pair of electrodes;
- an electrode, provided on said substrate, for applying an input signal to said electron-emitting device;
- an image forming member to which an electron emitted from said electron-emitting device is irradiated;
- a first electrode provided opposite to said substrate;
- a second electrode provided between said first electrode and said substrate, with a predetermined potential being applied to said second electrode, said second electrode being independent from said pair of electrodes;
- a second support member connected to said second electrode and said first electrode; and
- a first support member connected to said electrode for applying an input signal to said electron-emitting device and said second electrode,
- wherein said second support member has a semiconductive material surface to flow current between said first electrode and said second electrode via said second support member,
- and wherein said first support member has resistance greater than that of said second support member by ten times or more.
12. The image forming apparatus according to claim 11, wherein said second support member has surface resistivity of 10.sup.5.OMEGA./.quadrature. or greater than to 10.sup.13.OMEGA./.quadrature. or less.
13. The image forming apparatus according to claim 11, wherein an electron-beam source includes said electron-emitting devices, m scan-signal wiring electrodes and n information-signal wiring electrodes, with each electron-emitting device being connected with each scan-signal wiring electrode and each information-signal wiring electrode, layered via an insulating layer therebetween, on said substrate,
- and wherein said first support member is provided on at least one of the m scan-signal wiring electrodes and n information-signal wiring electrodes,
- further wherein said second electrode is provided on said first support member.
14. The image forming apparatus according to claim 11, wherein said second electrode respectively focuses an electron beam emitted from said electron-emitting device.
15. The image forming apparatus according to claim 11, wherein a voltage Vc applied to said second electrode satisfies the relations:
- Vc: a voltage applied to said second electrode,
- Vf: a voltage applied to said electron-emitting device,
- Va: a voltage applied to said first electrode,
- Tc: a thickness of said second electrode,
- H: a distance between said electron-emitting device and said first electrode,
- h: a distance between said electron-emitting device and said second electrode.
16. The image forming apparatus according to claim 11, wherein said electron-emitting device is a cold cathode electron-emitting device.
17. The image forming apparatus according to claim 11, wherein said electron-emitting device is a surface-conduction emission type of electron-emitting device.
18. The image forming apparatus according to claim 11, wherein said electron-emitting device is a flat field emission type electron-emitting device.
19. The image forming apparatus according to claim 11, wherein said second electrode is an ion blocking member which covers above an electron emitting portion of said electron-emitting device.
20. The image forming apparatus according to claim 11, wherein said second support member is a plate.
21. The image forming apparatus according to claim 11, wherein said first electrode is provided on an additional substrate provided opposite to said substrate.
22. The image forming apparatus according to claim 11, wherein said first electrode is an acceleration electrode.
23. An image forming apparatus comprising:
- a substrate;
- an electron-emitting device including a pair of electrodes, said device emitting an electron by a signal applied via said pair of electrodes;
- an electrode, provided on said substrate, for applying an input signal to said electron-emitting device;
- an image forming member to which an electron emitted from said electron-emitting device is irradiated;
- a first electrode provided opposite to said substrate;
- a second electrode provided between said first electrode and said substrate, with a predetermined potential being applied to said second electrode, said second electrode being independent from said pair of electrodes;
- a second support member connected to said second electrode and said first electrode; and
- a first support member connected to said electrode for applying an input signal to said electron-emitting device and said second electrode;
- wherein said second support member includes a conductive material,
- and wherein said first support member is insulated.
24. An image forming apparatus comprising:
- a substrate;
- an electron-emitting device including a pair of electrodes, said device emitting an electron by a signal applied via said pair of electrodes;
- an electrode, provided on said substrate, for applying an input signal to said electron-emitting device;
- an image forming member to which an electron emitted from said electron-emitting device is irradiated;
- a first electrode provided opposite to said substrate;
- a second electrode provided between said first electrode and said substrate, with a predetermined potential being applied to said second electrode, said second electrode being independent from said pair of electrodes;
- a second support member connected to said second electrode and said first electrode; and
- a first support member connected to said electrode for applying an input signal to said electron-emitting device and said second electrode;
- wherein said second support member includes a conductive material,
- and wherein said first support member has resistance so that said electrode for applying the input signal to said electron-emitting device is insulated from said second electrode.
4855636 | August 8, 1989 | Busta et al. |
4904895 | February 27, 1990 | Tsukamoto et al. |
5066883 | November 19, 1991 | Yoshioka et al. |
5448131 | September 5, 1995 | Taylor et al. |
5530314 | June 25, 1996 | Banno et al. |
5589731 | December 31, 1996 | Fahlen et al. |
5614781 | March 25, 1997 | Spindt et al. |
5659329 | August 19, 1997 | Yamanobe et al. |
0 496 450 | July 1992 | EPX |
0405262 | June 1994 | EPX |
0 631 295 | December 1994 | EPX |
57-118355 | July 1982 | JPX |
6431332 | February 1989 | JPX |
2257551 | October 1990 | JPX |
355738 | March 1991 | JPX |
428137 | January 1992 | JPX |
WO 94/18694 | August 1994 | WOX |
WO 94/20975 | September 1994 | WOX |
- R. Meyer, et al., "Recent Development on "Microtips" Display at LETI", Technical Digest of 4th International Vacuum Microelectronic Conference, Nagahama, pp. 6-9 (1991). M.I. Elinson, et al., "The Emission of Hot Electrons and the Field Mission of Electrons from Tin Oxide", Radio Engineering and Electronic Physics, pp. 1290-1296 (Jul. 1965). G. Dittmer, "Electrical Conduction and Electron Emission of Discontinuous Thin Films", Thin Solid Films, 9, pp. 317-328 (1982). M. Hartwell, et al., Strong Electron Emission from Patterned Tin-Indium Oxide Thin Films, International Electron Devices Meeting, pp. 519-521 (1975). H. Araki, et al., "Eletroforming and Electron Emission of Carbon Thin Films", Journal of the Vacuum Society of Japan, vol. 26, No. 1, pp. 22-29 (Sep. 24, 1981). W.P. Dyke, et al., "Field Emission", Advances in Electronics and Electron Physics, vol. VIII, pp. 89-185 (1956). C.A. Spindt, et al., "Physical Properties of Thin-Film Field Emission Cathodes with Molybdenum Cones", Journal of Applied Physics, vol. 47, No. 12, pp. 5248-5263 (Dec. 1976). C.A. Mead, "Operation of Tunnel-Emission Devices", Journal of Applied Physics, vol. 32, No. 4, pp. 646-652 (Apr. 1961).
Type: Grant
Filed: Apr 16, 1996
Date of Patent: Aug 10, 1999
Assignee: Canon Kabushiki Kaisha (Tokyo)
Inventors: Masahiro Fushimi (Zama), Hideaki Mitsutake (Yokohama), Hidetoshi Suzuki (Fujisawa)
Primary Examiner: Sandra O'Shea
Assistant Examiner: Joseph Williams
Law Firm: Fitzpatrick, Cella, Harper & Scinto
Application Number: 8/631,891
International Classification: H01J 2904;