Silicon wafer emitter electrode configuration

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Description

FIG. 1 is a top plan view of a silicon wafer emitter electrode configuration showing my new design.

FIGS. 2 and 3 are end and side elevational views respectively of the electrode configuration.

This is a design for the characteristic features of emitter electrode configurations deposited on a silicon wafer with the electrodes delineated by the black areas in FIG. 1. The wafer is shown in broken lines for illustration purposes only.

Referenced Cited
U.S. Patent Documents
2707762 May 1955 Stuetzer
3301706 January 1967 Flaschen et al.
3319139 May 1967 Rueffer
3821780 June 1974 Harland, Jr. et al.
Patent History
Patent number: D262962
Type: Grant
Filed: Nov 3, 1978
Date of Patent: Feb 9, 1982
Inventor: Winton C. Strumpell (Los Angeles, CA)
Primary Examiner: Susan J. Lucas
Attorney: Warren T. Jessup
Application Number: 5/957,770
Classifications
Current U.S. Class: D13/99
International Classification: D1399;