Power semiconductor device
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Description
The broken line portion of the figure drawings is included to show portions of the article that form no part of the claimed design.
Claims
The ornamental design for a power semiconductor device, as shown and described.
Referenced Cited
U.S. Patent Documents
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Patent History
Patent number: D814431
Type: Grant
Filed: Nov 12, 2015
Date of Patent: Apr 3, 2018
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Manabu Matsumoto (Tokyo), Yoshitaka Otsubo (Tokyo), Hiroyuki Masumoto (Tokyo)
Primary Examiner: Thomas Johannes
Assistant Examiner: Shawn T Gingrich
Application Number: 29/545,425
Type: Grant
Filed: Nov 12, 2015
Date of Patent: Apr 3, 2018
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Manabu Matsumoto (Tokyo), Yoshitaka Otsubo (Tokyo), Hiroyuki Masumoto (Tokyo)
Primary Examiner: Thomas Johannes
Assistant Examiner: Shawn T Gingrich
Application Number: 29/545,425
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)