Abstract: A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

Abstract: A system to automate the filling of electronic vape cartridges with viscous liquid. The system includes an enclosure sealed with removable panels for maintenance access, compartments to interface cartridges and liquids with the internal mechanisms, and an external human machine interface. The internal mechanisms utilize thermally insulative annular nozzles and a thermal control system to diminish the internal friction of the liquid to facilitate consistent transfer of liquid between a reservoir, heated by a heated bed, syringe assembly, comprising a heating element along a raceway, and empty cartridges inserted into the system. This system is capable of filling approximately 100 cartridges per minute, and may interface with cartridges of various configurations and formulations of varying composition and characteristics.

Abstract: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen. Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.

Abstract: A diamond polycrystal is a diamond polycrystal basically composed of a diamond single phase, wherein the diamond polycrystal is composed of a plurality of diamond grains having an average grain size of less than or equal to 30 nm, and the diamond polycrystal has a carbon dangling bond density of more than or equal to 10 ppm.

Abstract: A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10?5 volume % or more and 5.0×10?1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

Abstract: The present disclosure is a photoelectric conversion element including: a photoelectric conversion layer 5 including a first quantum dot 4a and a second quantum dot 4b, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot 4a, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot 4b, and Equation (1) is satisfied: 0.3<N??(1), where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

Abstract: Provided is a synthetic single crystal diamond containing nitrogen atoms at a concentration of more than 600 ppm and 1500 ppm or less. The Raman shift ?? (cm?1) of a peak in a primary Raman scattering spectrum of the synthetic single crystal diamond and the Raman shift ? (cm?1) of a peak in a primary Raman scattering spectrum of a synthetic type IIa single crystal diamond containing nitrogen atoms at a content of 1 ppm or less satisfy the following expression (1): ??????0.10??(1).

Abstract: A method of selectively controlling materials structure in solution based chemical synthesis and deposition of materials by controlling input energy from pulsed energy source includes determining solution conditions, searching and/or determining energy barrier(s) of a desired materials structure formation, applying precursor solution with selected solution condition onto a substrate, and applying determined input energy from a pulsed energy source with a selected condition to the substrate, thereby nucleating and growing the crystal.

Abstract: The present invention relates to a method for producing a core-shell structure including a CdSe core based on a glyme solvent. The method of the present invention enables the production of a core-shell structure including a CdSe core in a simple and economical manner. The present invention also relates to a core-shell structure including a CdSe core produced by the method. The core-shell structure of the present invention includes a large amount of CdSe and is uniform in size. Particularly, the core-shell structure of the present invention can be coated on a flexible plastic substrate of an optical device or semiconductor device due to its high stability.

Abstract: Intrinsic broadband white-light emitting phosphors and a solution-state method for producing them are disclosed. Emitters in accordance with the present invention include layered perovskite-based phosphors that comprise metals and halides and have an emission spectrum that spans the entire visible-light spectrum.

Abstract: The invention relates to a method for producing waveguides (201) from a material (202) of the KTP family comprising the following method steps: b) treating the material (202) in such a way that a periodic poling of the material (202) is achieved, c) treating the material (202) in a molten salt bath (309c), which contains rubidium ions, characterized in that the molten salt bath (309c) which contains rubidium ions in step c) satisfies the following boundary conditions: the mole fraction of rubidium nitrate (RbNO3) in the melt lies in the range of 86-90 mol % at the beginning of the treatment, the mole fraction of potassium nitrate (KNO3) in the melt lies in the range of 10-12 mol % at the beginning of the treatment, the mole fraction of barium nitrate (Ba(NO3)2) in the melt lies in the range of 0.5-1 mol % at the beginning of the treatment, the temperature of the melt lies in the range of 357-363° C. during the treatment.

Abstract: A nanofiber forest that includes a pattern or shape can be transferred to a substrate. The nanofiber forest can be configured to have any perimeter and/or internal shape or pattern using a stencil technique and/or using an engraving technique. This pattern can be transferred as a “negative image” of a corresponding pattern in a stencil or as a “positive image” by engraving the pattern directly into the nanofiber forest. For either type of pattern formation, the patterned nanofiber forest is transferred by applying a substrate to the pattern or to a nanofiber forest covered by a patterned stencil. Pressure is then applied causing the exposed surface of the nanofiber forest or pattern of nanofiber forest to adhere to the substrate.

Abstract: The present invention discloses a method for manufacturing a high-sensitivity piezoresistive sensor using a multi-level structure design, including the following steps: forming first-level basic geometrical units formed of basic structural units on a substrate, where each first-level basic geometrical unit is a two-dimensional or three-dimensional network structure formed by stacking several basic structural units; stacking and combining several first-level basic geometrical units in an array to form a second-level geometrical structure, and forming a contact connection area located between adjacent first-level basic geometrical units; and dispensing a conductive adhesive in at least two positions on the substrate to form electrodes of a piezoresistive sensor, so as to obtain the piezoresistive sensor.

Abstract: The invention relates to a plasma treatment device for carrying out a dielectric barrier plasma discharge, comprising an electrode unit (1), which has a treatment side (5), and comprising a supply unit (10), to which the electrode unit (1) can be mechanically connected and by means of which the electrode unit can be brought into electrical contact in order to be supplied with a supply voltage necessary for the plasma generation, wherein the electrode unit (1) has an electrode arrangement, which is shielded by means of a planar dielectric (2) at least toward the treatment side (5), enables the use of different electrode units (1) with the same supply unit (10) in that the electrode unit (1) has a coding and the supply unit (10) has an identifying device for the coding and the identifying device is connected to a control device, which controls the supply voltage for the plasma generation in accordance with the identified coding.

Abstract: Provided herein are organic-inorganic hybrid-perovskites, including metal halide perovskites having a 1D crystal structure. The metal halide perovskites may be luminescent. The metal halide perovskites may include a dopant, including an emitter dopant. Methods of forming metal halide perovskites, and devices including the metal halide perovskites also are provided.

Abstract: A synthetic diamond heat spreader that includes a first layer of synthetic diamond material forming a base support layer and a second layer of synthetic diamond material disposed on the first layer of synthetic diamond material and forming a diamond surface layer. The diamond surface layer has a thickness equal to or less than a thickness of the base support layer. The diamond surface layer has a nitrogen content less than that of the base support layer. The nitrogen content of the diamond surface layer and the diamond support layer is selected such that the thermal conductivity of the base support layer is in a range 1000 W/mK to 1800 W/mK and the thermal conductivity of the surface support layer is in a range 1900 W/mK to 2800 W/mK.

Abstract: Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

Abstract: A method for producing metal oxide nanocrystals, according to the embodiment of the present invention, includes: continuously flowing, into a continuous flow path, one or a plurality of nanocrystal precursor solutions each comprising one or more nanocrystal precursors dissolved in a non-polar solvent; directing a segmenting gas into the continuous flow path to create a segmented reaction flow; flowing the segmented reaction flow into a thermal processor; heating the segmented reaction flow in the thermal processor to create a product flow; and collecting metal oxide nanocrystals from the product flow.

Abstract: An inspection apparatus for inspecting an inspection object having a coating layer includes: multiple light emitters configured to emit light beams each having an annular cross-section onto the coating layer; an imaging unit configured to take an image of a light beam reflected on the coating layer; a counter configured to count the number of annular light beam images per unit area in the image taken by the imaging unit; and a thickness determination unit configured to determine whether or not the thickness of the coating layer is acceptable, based on the number of the annular light beam images counted by the counter.

Abstract: The present invention relates to a method for preparing an inorganic/organic hybrid perovskite compound film, and a structure for a solar cell and, specifically, a method for preparing an inorganic/organic hybrid perovskite compound film, according to one embodiment of the present invention, can comprise the steps of: a) forming, on a substrate layer, an adduct layer containing an adduct of halogenated metal and guest molecule; and b) preparing an inorganic/organic hybrid perovskite compound film by reacting the adduct layer and an organic halide.

Abstract: A semiconductor substrate according to the present invention includes a nitride semiconductor layer 203, an amorphous semiconductor layer 205 formed on one main surface side of the nitride semiconductor layer 203, a high-roughness layer 206 which is a semiconductor layer formed on the amorphous semiconductor layer 205 and has a surface roughness larger than the amorphous semiconductor layer 205, and a diamond layer 207 formed on the high-roughness layer 206. Damage to the nitride semiconductor layer can be reduced in forming the diamond layer on the nitride semiconductor layer and adhesion between the layers can be increased.

Abstract: A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer.

Abstract: A method for sintering includes loading a tool material into a resistance heating element within a HPHT press and heating the resistance heating element at a first axial portion to a control temperature, where a temperature difference is measured between the control temperature and a second temperature measured at a distal axial portion along the resistance heating element, wherein a difference between the control temperature and the second temperature ranges between about 5 percent to about 11 percent of the control temperature.

Abstract: A method for producing a metal oxide nanocrystals according to the embodiment of the present invention comprises continuously flowing a nanocrystal precursor solution comprising a nanocrystal precursor into a continuous flow path and heating the nanocrystal precursor solution in the continuous flow path to create nanocrystals, comprising: providing a nanocrystal precursor solution supply unit that is connected to the continuous flow path and comprises a first vessel and a second vessel; delivering a nanocrystal precursor solution in the second vessel to the continuous low path; and creating a nanocrystal precursor solution in the first vessel as a different batch from the nanocrystal precursor solution in the second vessel.

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

Abstract: Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks.

Abstract: A nanocrystal preparation method comprises the following steps: dissolving, in a first selected solvent, a first precursor which is in a gaseous state under normal temperature and normal pressure, to form a first precursor solution; dissolving a second precursor in a second selected solvent to form a second precursor solution, wherein the second precursor is a precursor of a metal element of Group I, Group II, Group III or Group IV; and in an inert gas atmosphere, adding the first precursor solution into a reaction vessel which contains the second precursor solution, wherein the first precursor chemically reacts with the second precursor to generate a nanocrystal. The present invention further discloses a nanocrystal prepared by the above method and an apparatus for preparing and storing a gas-dissolved solution.

Abstract: A method for manufacturing a semiconductor device includes forming a gate electrode over a substrate; forming a hard mask over the gate electrode, in which the hard mask comprises a metal oxide; forming an interlayer dielectric (ILD) layer over the hard mask; forming a contact hole in the ILD layer, wherein the contact hole exposes a source/drain; filling the contact hole with a conductive material; and applying a chemical mechanical polish process to the ILD layer and the conductive material, wherein the chemical mechanical polish process stops at the hard mask, the chemical mechanical polish process uses a slurry containing a boric acid or its derivative, the chemical mechanical polish process has a first removal rate of the ILD layer and a second removal rate of the hard mask, and a first ratio of the first removal rate to the second removal rate is greater than about 5.

Abstract: A method for preparing a thin or thick film, including the aligning non-spherical seed crystals on a flat portion of at least one surface of the substrate such that an a-axis, a b-axis, and/or a c-axis are oriented according to a certain rule; and exposing the aligned seed crystals to a solution for enabling the growth of the seed crystals to thereby form and grow a film from the seed crystals using a secondary growing technique.

Abstract: Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

Abstract: A sorbent in the form of a layered, non-porous perovskite is provided, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. Furthermore, each organic layer can be sandwiched between inorganic layers. Methods for capturing one or more halogens from a gas stream are also provided, wherein the methods can include contacting a gas stream with a sorbent in the form of a layered, non-porous perovskite, wherein the sorbent can include parallel, alternating layers of an organic layer, including an ordered array of organic moieties capable of reacting with a gaseous halogen, and an inorganic layer, including a metal-halide sheet. One or more halogens in the gas stream can react with either alkyne groups or alkene groups found in the organic layer of the sorbent.

Abstract: A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm2, the method comprising: (a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation being no more than 5 ?m; (b) analyzing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and (c) selectively processing over only the protruding regions on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm.

Abstract: A method for transferring an assembly of oriented nanowires from a liquid interface onto a surface including providing a first liquid and a second liquid, wherein the first and second liquids phase separate into a bottom phase, a top phase and an interface between the bottom phase and the top phase, providing nanowires in the first and second liquids such that the majority of the nanowires are located at the interface and providing the nanowires onto a substrate such that a majority of the nanowires are aligned with respect to each other on the substrate.

Abstract: In a method of fabricating a field effect transistor, a Mo layer is formed on the substrate. The Mo layer is sulfurized to convert it into a MoS2 layer. Source and drain electrodes are formed on the MoS2 layer. The MoS2 layer is treated with low-power oxygen plasma. A gate dielectric layer is formed on the MoS2 layer. A gate electrode is formed on the gate dielectric layer. An input electric power in the low-power oxygen plasma treatment is in a range from 15 W to 50 W.

Abstract: Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.

Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed.

Abstract: A method of forming a film of photonic crystal material. A first process is performed upon a material capable of having a photonic crystal structure, this process causing deformation of the material so as to form a film in which incident light received by the material is selectively reflected or transmitted to generate a first optical effect in the film. A second process is performed upon substantially all of the film which applies a shear stress to the film. This causes a change in the material structure so as to generate a second optical effect in the film, different from the first optical effect, in response to incident light. Security films, devices, articles and documents formed using the method are also discussed.

Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.

Abstract: The present invention provides a method capable of stably producing a zinc oxide single crystal in which a large amount of dopant forms a solid solution at a high level of productivity and reproducibility without using a harmful substance. The method of the present invention comprises providing a raw material powder that is mainly composed of zinc oxide, comprises at least one dopant element selected from B, Al, Ga, In, C, F, Cl, Br, I, H, Li, Na, K, N, P, As, Cu, and Ag in a total amount of 0.01 to 1 at %, and is substantially free of a crystal phase other than zinc oxide, and injecting the raw material powder to form a film mainly composed of zinc oxide on a seed substrate comprising a zinc oxide single crystal and also to crystallize the formed film in a solid phase state.

Abstract: A device for passing a biopolymer molecule includes a nanochannel formed between a surface relief structure, a patterned layer forming sidewalls of the nanochannel and a sealing layer formed over the patterned layer to encapsulate the nanochannel. The surface relief structure includes a three-dimensionally rounded surface that reduces a channel dimension of the nanochannel at a portion of nanochannel and gradually increases the dimension along the nanochannel toward an opening position, which is configured to receive a biopolymer.

Abstract: The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material.

Abstract: A method for fabricating a Light Emitting Diode (LED) with increased light extraction efficiency, comprising providing a III-Nitride based LED structure comprising a light emitting active layer between a p-type layer and an n-type layer; growing a Zinc Oxide (ZnO) layer epitaxially on the p-type layer by submerging a surface of the p-type layer in a low temperature aqueous solution, wherein the ZnO layer is a transparent current spreading layer; and depositing a p-type contact on the ZnO layer. The increase in efficiency may be more than 93% with very little or no increase in cost.

Abstract: This invention provides a process for increasing the crystallinity of at least one solid material which is less than 100% crystalline, comprising contacting said solid material with solvent in which the solid material is insoluble or poorly soluble (a non-solvent); and applying ultrasound to the solid material when in contact with said non-solvent.

Abstract: A method is disclosed for synthesis of nanoparticles of metal selenide, metal selenide alloys, metal chalcogenide comprising at least selenium or metal chalcogenide alloys comprising at least selenium. The method comprises obtaining a heterogeneous dispersion of powder at least selenium in a first solvent at a first temperature, the first temperature being such that the heterogeneous dispersion comprises at least a fraction of undissolved powder in the solvent. The method also comprises introducing the heterogeneous dispersion into a second solvent containing a metal cation precursor, the second solvent being at a second temperature higher than said first temperature allowing, upon introduction of the heterogeneous dispersion, dissolution of at least the fraction of the power resulting in nucleation of the nanoparticles. The method results in efficient and easy production of nanoparticles.

Abstract: The present invention features crystalline forms of Compound I. In one embodiment, a crystalline form of Compound I has characteristic peaks in the PXRD pattern at values of two theta (° 2?) of 10.7, 11.6, 12.7, 13.0, 13.2, 13.7, 14.5, 18.7, 19.0, and 19.9 after equilibration at 43% relative humidity.

Abstract: A method of purifying a nanodiamond powder includes preparing the nanodiamond powder, heating the nanodiamond powder at between 450° C. and 470° C. in an atmosphere including oxygen, performing a hydrochloric acid treatment on the heated nanodiamond powder, and performing a hydrofluoric acid treatment on the nanodiamond powder obtained after performing the hydrochloric acid treatment.

Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.

Abstract: The present invention provides processes for making 2-((3R,5R,6S)-5-(3-chlorophenyl)-6-(4-chlorophenyl)-1-((S)-1-(isopropylsulfonyl)-3-methylbutan-2-yl)-3-methyl-2-oxopiperidin-3-yl)acetic acid as well as intermediates and processes for making the intermediates. Also provided are crystalline forms of the compound and the intermediates.

Abstract: The present invention pertains to a method for loading a crystallization device and for manufacturing a crystallization device comprising multiple receptacles with a pre-defined amount of at least one matrix-forming compound capable of forming a crystallization matrix for a membrane protein, said method comprising the following steps: a) Modifying the state of aggregation of said at least one matrix-forming compound to a fluidic state which allows dispensing said at least one matrix-forming compound, and b) dispensing a defined amount of said at least one matrix-forming compound into at least one receptacle of the crystallization device, wherein said dispensed matrix-forming compound solidifies within said receptacle. Thereby, pre-filled crystallization devices are obtained which can be used as consumables in particular in automated crystallization processes. Also provided are protein crystallization methods using respectively prepared crystallization devices.

Abstract: A method of synthesizing diamond, the method comprising; (i) providing, in the presence of an atomic hydrogen plasma and/or in the presence of atomic hydrogen radicals, in a dissolution zone a liquid metal saturated with carbon with respect to graphite precipitation; (ii) transferring at least a portion of the liquid metal from the dissolution zone to a deposition zone, (vi) exposing the liquid metal in the deposition zone to atomic hydrogen plasma and/or to atomic hydrogen radicals, the temperature of the liquid metal in the deposition zone being lower than the temperature of the liquid metal in the dissolution zone such that the liquid metal in the deposition zone is saturated, preferably supersaturated, with carbon with respect to diamond precipitation; (vii) precipitating carbon from the liquid metal in the deposition zone to synthesize diamond; and (viii) optionally removing the synthesized diamond from the metal.