Abstract: A system for manufacturing one or more single crystals of a semiconductor material by physical vapor transport (PVT) includes a reactor having an inner chamber adapted to accommodate a PVT growth structure for growing the one or more single crystals inside. The reactor accommodates the PVT growth structure in an orientation with a growth direction of the one or more single crystals inside the PVT growth structure substantially horizontal with respect to a direction of gravity or within an angle from horizontal of less than a predetermined value.

Abstract: The molybdenum crucible includes a cylindrical side wall and a bottom provided integrally with one end of the side wall. The side wall includes a coarse grain region configured to extend from an outer wall toward an inner wall and a fine grain region configured to extend from the inner wall toward the outer wall so as to be in contact with the coarse grain region. The ratio of the coarse grain region in the side wall in the thickness direction thereof is 10% or more and less than 90%. The coarse grain region is defined as such a region in which crystal grains having a grain size of 1 mm or more determined by an intercept method in the height direction of the crucible occupy 95% or more of an area of a measurement region.

Abstract: A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.

Abstract: A device for determining or monitoring the filling level of a filling material stored in a container in a process, comprising a signal generating unit, a coupling/decoupling unit which couples the high-frequency measurement signals to an antenna unit or decouples said high-frequency measurement signals from the antenna unit. The antenna unit has a wave guide and an antenna element which widens in the direction of the filling material. The antenna unit emits high-frequency measurement signals in the direction of the surface and receives the echo signals reflected by the surface of the filling material. A control/evaluation unit determines the filling level of the filling material in the container from the transit time of the measurement signals.

Abstract: The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

Abstract: A method of producing a double-doped scintillation crystal is provided. Czochralski method is used to grow a double-doped single crystal boule. The double-doped single crystal boule is a single crystal boule of rare-earth silicate double-doped with cerium (Ce) and calcium (Ca) or magnesium (Mg). The double-doped single crystal boule is subjected to a thermal annealing process in a furnace. A yield of pixel samples of the double-doped scintillation crystal is improved after a processing process, and the present invention achieves low producing cost, high yield, less crystal fragmentations, high luminescence intensity and short decaying time.

Abstract: The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.

Abstract: Provided is a solar battery cell with low price, high reliability, and high conversion efficiency. A manufacturing method for the solar battery cell including the following processes. That is: forming and laminating a second conductive-type layer and an antireflection film on a first conductive-type semiconductor substrate; applying a conductive paste containing a conductive particle and a glass frit to a predetermined position of the antireflection film; firing the semiconductor substrate with the conductive paste applied thereto; and forming an electrode penetrating the antireflection film and electrically connected to the second conductive-type layer. The semiconductor substrate with the conductive paste applied thereto is consecutively subjected to heat treatment just after the firing instead of being returned to room temperature.

Abstract: A method of producing a sapphire product from a suitable precursor material is disclosed. The method comprising the steps of placing a sapphire product precursor on a support apparatus of a crystalline material processing assembly further comprising at least one cutting tool and two or more x-ray module fixedly positioned around the product precursor. The support apparatus can be tilted and rotated in order to align the crystalline plane orientations to a fixed cutting direction, and the sapphire product can be produced by cutting in that direction.

Abstract: A method for minimizing unwanted ancillary reactions in a vacuum furnace used to process a material, such as growing a crystal. The process is conducted in a furnace chamber environment in which helium is admitted to the furnace chamber at a flow rate to flush out impurities and at a predetermined pressure to achieve thermal stability in a heat zone, to minimize heat flow variations and to minimize temperature gradients in the heat zone. During cooldown helium pressure is used to reduce thermal gradients in order to increase cooldown rates.

Abstract: The disclosure relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of the material in a crucible, that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; the method including that the electromagnetic kneading is obtained by applying an alternating magnetic field. The disclosure also relates to a device for implementing the method.

Abstract: A refractive index device and method of making it include obtaining a glass structure comprising a plurality of nucleation sites. The glass structure is formed from a glass composition that comprises a first chemical component and a second chemical component. A crystal of the second chemical component has a different second refractive index from a first refractive index of the first chemical component. Each nucleation site defines where a crystal of the second chemical component can be grown. The method includes causing crystals of the second chemical component to grow in situ at a set of the plurality of nucleation sites in order to produce a spatial gradient of a refractive index in the glass structure.

Abstract: The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy containing silicon, or a refined silicon melt, wherein small silicon crystals are added to the melt and the resulting large silicon crystals are separated from the melt. The separation may be performed by centrifugation or filtration.

Abstract: Provided are an apparatus and method of extracting a silicon ingot. The apparatus for extracting a silicon ingot includes a chamber in which a silicon source material introduced into a cold crucible is melted, a primary extraction apparatus vertically movably installed in the chamber and configured to solidify the molten silicon to extract the silicon ingot, a movable apparatus configured to horizontally move the primary extraction apparatus, and a secondary extraction apparatus vertically movably installed under the chamber and configured to extract the silicon ingot in a state in which the primary extraction apparatus is moved to one side. Therefore, as the height of the extraction apparatus is reduced, manufacturing cost of equipment can be reduced and installation space of the extraction apparatus can also be reduced.

Abstract: Provided is a process for producing colloidal crystals from which a large single crystal reduced in lattice defects and unevenness can be easily produced at low cost without fail. The process for colloidal crystal production comprises: preparing a colloidal polycrystal dispersion in which colloidal crystals precipitate at a given temperature (preparation step); introducing into a vessel The colloidal polycrystal dispersion in the state of containing fine colloidal polycrystals precipitated (introduction step); and melting the colloidal polycrystals and then recrystallizing the molten polycrystals (recrystallization step). The crystals thus obtained have fewer lattice defects and less unevenness than the original polycrystals.

Abstract: A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

Abstract: A method of producing a crystalline product comprising a high percentage by volume monocrystalline material in a crystal growth apparatus is disclosed. The method comprises the steps of providing a crucible comprising feedstock and at least one monocrystalline seed, melting the feedstock without substantially melting the monocrystalline seed under controlled conditions, and forming the crystalline product by solidification of the melt also under controlled conditions. The resulting crystalline product comprises greater than 50% by volume monocrystalline material.

Abstract: Disclosed is a preparation method of a polycrystalline silicon ingot. The preparation method comprises: providing a silicon nucleation layer at the bottom of a crucible, and filling a silicon material above the silicon nucleation layer; heating the silicon material to melt same, adjusting the thermal field inside the crucible to make the melted silicon material to start crystallization on the basis of the silicon nucleation layer; and when the crystallization is finished, performing annealing and cooling to obtain a polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot. Further disclosed are a polycrystalline silicon ingot obtained through the preparation method and a polycrystalline silicon wafer made using the polycrystalline silicon ingot as a raw material.

Abstract: The present invention relates to a method for purifying silicon, comprising at least the following steps: c) providing a container (1) that comprises silicon (10) in molten state, the container (1) having a longitudinal axis (X) and the silicon (10) in molten state defining a free surface (11) on the side opposite the bottom (4) of the container (1); d) imposing on the silicon (10) in molten state conditions that are favourable for the solidification thereof, the mean temporal velocity for the duration of step b) of propagating the solidification front (13) of the silicon, measured along the longitudinal axis (X) of the container (1), being no lower than 5 ?m/s, preferably 10 ?m/s; said method being characterised in that at least one stirring system (30) imposes, during all or part of step b), a flow of silicon (10) in molten state with a Reynolds number comprised between 3 104 and 3 106, preferably between 105 and 106.

Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With these methods, an ingot can be grown that is low in carbon and whose crystal growth is controlled to increase the cross-sectional area of seeded material during casting.

Abstract: The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.

Abstract: Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0×10?5.

Abstract: The invention relates to a device and a method for producing crystalline bodies by directional solidification. The device comprises a melting furnace (11) having a heating chamber (12) in which at least one supporting surface (13) for a crucible (8) and at least one gas purging device arranged above the supporting surface (13) and having a gas outlet facing the supporting surface (13) are defined. An embodiment of the device is characterized in that the gas outlet is defined by one or more openings in a lower plunger surface of a plunger-shaped element (2) which has a geometry adapted to the inner shape of the crucible (8), said shape allowing an at least partial insertion of the plunger-shaped body (2) into the crucible (8). The gas purging device and/or the supporting surface (13) comprise an adjusting mechanism or are designed to be adjustable in such a manner that they allow an adjustment of a perpendicular distance between the supporting surface (13) and the plunger-shaped body (2).

Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Abstract: A silicon member for a semiconductor apparatus is provided. The silicon member has an equivalent performance to one fabricated from a single-crystalline silicon even though it is fabricated from a unidirectionally solidified silicon. In addition, it can be applied for producing a relatively large-sized part. The silicon member is fabricated by sawing a columnar crystal silicon ingot obtained by growing a single-crystal from each of seed crystals by placing the seed crystals that are made of a single-crystalline silicon plate on a bottom part of a crucible and unidirectionally solidifying a molten silicon in the crucible.

Abstract: A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×1017 cm?3 in the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.

Abstract: The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.

Abstract: Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.

Abstract: The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

Abstract: Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

Abstract: Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.

Abstract: Scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, and a variety of second dopants (co-dopants). In another embodiment, the scintillation materials of this invention have an alkali halide host material, a (first) scintillation dopant of various types, a variety of second dopants (co-dopants), and a variety of third dopants (co-dopants). Co-dopants of this invention are capable of providing a second auxiliary luminescent cation dopant, capable of introducing an anion size and electronegativity mismatch, capable of introducing a mismatch of anion charge, or introducing a mismatch of cation charge in the host material.

Abstract: The present disclosure discloses, in one arrangement, a single crystalline iodide scintillator material having a composition of the formula AM1-xEuxI3, A3M1-xEuxI5 and AM2(1-x)Eu2xI5, wherein A consists essentially of any alkali metal element (such as Li, Na K, Rb, Cs) or any combination thereof, M consists essentially of Sr, Ca, Ba or any combination thereof, and 0?x?1. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the iodide scintillator materials include radiation detectors and their use in medical and security imaging.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Abstract: Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems.

Abstract: It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

Abstract: Systems and methods are disclosed for crystal growth including features of reducing micropit cavity density in grown germanium crystals. In one exemplary implementation, there is provided a method of inserting an ampoule with raw material into a furnace having a heating source, growing a crystal using a vertical growth process wherein movement of a crystallizing temperature gradient relative to the raw material/crucible is achieved to melt the raw material, and growing, at a predetermined crystal growth length, the material to achieve a monocrystalline crystal, wherein monocrystalline ingots having reduced micro-pit densities are reproducibly provided.

Abstract: Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

Abstract: Methods are provided for casting one or more of a semi-conductor, an oxide, and an intermetallic material. With such methods, a cast body of a geometrically ordered multi-crystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm.

Abstract: A crystal growing system having multiple rotatable crucibles and using a temperature gradient method comprises a crystal furnace, a plurality of crucibles, a supporting device, and a temperature control device. The crystal furnace includes a furnace body, a heater, and a hearth, wherein the furnace body from outer to inner includes an outer shell, a fiber insulation layer, an insulation brick layer, and a refractory layer. The crucible supporting device includes an elevator, a plurality of crucible guiding tubes, and a plurality of tube holders each capable of supporting a crucible guiding tube, a moving device that is connected to the elevator, a motor with electrical power that is connected to the moving device, wherein there is an affixing device between each pair of guiding tube and guiding tube holder. Each crucible is located in a corresponding crucible guiding tube. The crucible supporting device is a rotatable device.

Abstract: The present invention relates to an apparatus and method for purifying silicon using directional solidification. The apparatus can be used more than once for the directional solidification of silicon without failure. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.

Abstract: The method of the invention promotes single crystal growth during fabrication of melt growth semiconductors. A growth ampoule and its tip have a semiconductor source material placed therein. The growth ampoule is placed in a first thermal environment that raises the temperature of the semiconductor source material to its liquidus temperature. The growth ampoule is then transitioned to a second thermal environment that causes the semiconductor source material in the growth ampoule's tip to attain a temperature that is below the semiconductor source material's solidus temperature. The growth ampoule so-transitioned is then mechanically perturbed to induce single crystal growth at the growth ampoule's tip.

Abstract: The present invention provides a method for manufacturing a corundum substance, comprising steps of providing a corundum crystal having an a-axis and a growth along the a-axis; and obtaining the corundum substance from the corundum crystal in a particular direction.

Abstract: A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.

Abstract: A method of producing a crystalline semiconductor material includes feeding particles of the semiconductor material and/or a precursor compound of the semiconductor material into a gas flow, wherein the gas flow has a sufficiently high temperature to convert the particles of the semiconductor material from a solid into a liquid and/or gaseous state and/or to thermally decompose the precursor compound, condensing out and/or separating the liquid semiconductor material from the gas flow, and converting the liquid semiconductor material to a solid state with formation of mono- or polycrystalline crystal properties.

Abstract: A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

Abstract: Systems, methods, and substrates directed to growth of monocrystalline germanium (Ge) crystals are disclosed. In one exemplary implementation, there is provided a method for growing a monocrystalline germanium (Ge) crystal. Moreover, the method may include loading first raw Ge material into a crucible, loading second raw Ge material into a container for supplementing the Ge melt material, sealing the crucible and the container in an ampoule, placing the ampoule with the crucible into a crystal growth furnace, as well as melting the first and second raw Ge material and controlling the crystallizing temperature gradient of the melt to reproducibly provide monocrystalline germanium ingots with improved/desired characteristics.

Abstract: A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by preparing a crystalline substrate by forming crystallographically oriented pits across an exposed surface of the substrate. A transition region can be deposited on the substrate under substantially epitaxial growth conditions. Single crystal substrates of a wide variety of materials such as diamond, aluminum nitride, silicon carbide, etc. can be formed having relatively low defect rates.