Abstract: An expanded cold mirror is provided. The mirror includes a substrate and a coating deposited on the substrate. The coating includes a first coating stack comprising at least one period of a low refractive index metal oxide coating layer and a high refractive index metal oxide coating layer, a second coating stack comprising at least one period of a low refractive index metal fluoride coating layer and a high refractive index metal oxide layer, and a third coating stack comprising at least one period of a low refractive index metal fluoride coating layer and a high refractive index metal fluoride coating layer.

Abstract: The invention is directed to calcium fluoride crystal optics with improved laser durability that can be used for the transmission of below 250 nanometer (nm) electromagnetic radiation. The optics consists of CaF2 as the major component and Mg in an amount in the range of 13 ppm to 20 ppm while Ce and Mn are <0.5 ppm. The doped crystal and optics made therefrom have a ratio of 515/380 nm transmission loss of less than 0.3 after exposure to greater than 2.8 MRads of ?-radiation. Further, the doped crystal and optics made therefrom exhibit a greatly improved lifetime as shown by ALDT testing to at least 1 billion pulses.

Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Abstract: The invention is directed to calcium fluoride crystal optics with improved laser durability that can be used for the transmission of below 250 nanometer (nm) electromagnetic radiation. The optics consist of CaF2 as the major component and, in one embodiment, at least one dopant/amount selected >0.3-1200 ppm Mg, >0.3-200 ppm Sr, >0.3-200 ppm Ba, while Ce and Mn are <0.5 ppm. The doped crystal and optics made therefrom have a ratio of 515/380 nm transmission loss of less than 0.3 after exposure to greater than 2.8 MRads of ?-radiation.

Abstract: A system, method and masking arrangement are provided of enhancing the width of polycrystalline grains produced using sequential lateral solidification using a modified mask pattern is disclosed. One exemplary mask pattern employs rows of diamond or circular shaped areas in order to control the width of the grain perpendicular to the direction of primary crystallization.

Abstract: Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams.

Abstract: A laser crystallization method in which an amorphous silicon thin film 2 formed on a substrate 1 is irradiated with a laser beam, the method including the steps of providing the amorphous silicon thin film 2 with an absorbent to form an absorbent layer 3 on the desired specific local areas of the amorphous silicon thin film 2 and laser annealing for crystallizing the specific local areas of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 2 including the specific local areas with a semiconductor laser beam L having a specific wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3.

Abstract: A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such section(s) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such section(s) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample.

Abstract: A pressure source material is loaded into a space having constraint device 1, which is formed partly by optically transparent material 1a, 1b, and is disrupted under volume constraint. Light energy is externally supplied to the pressure source material constrained in the space through the optically transparent material by employing the device to apply light energy. The disruption of atomic bonds in the pressure source material is induced by heating the pressure source material above the boiling point thereof through the supplied energy. Exceptionally high pressures are generated in the space by the use of expansive forces arising from the disruption of atomic bonds. Such a configuration can implement ultrahigh pressure abilities that has not been achieved, so far.

Abstract: In accordance with one aspect, the present invention provides a method for providing polycrystalline films having a controlled microstructure as well as a crystallographic texture. The methods provide elongated grains or single-crystal islands of a specified crystallographic orientation. In particular, a method of processing a film on a substrate includes generating a textured film having crystal grains oriented predominantly in one preferred crystallographic orientation; and then generating a microstructure using sequential lateral solidification crystallization that provides a location-controlled growth of the grains orientated in the preferred crystallographic orientation.

Abstract: A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows in both the beam width and length direction. After the second beam and on, growth is repeated using the crystal grain formed in the tip of the concave as the seed. This forms a band-form crystal grain with a wider than that of the conventional narrow-line beam, with the tip of the concave being the start point. Further, by setting the periphery of the concave pattern to be equal or less than the crystal grain diameter in the direction vertical to the beam scanning direction, it is possible to form the band-form crystal grain being lined continuously.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.

Abstract: In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component and 0.1-10 atomic % of germanium is used as a first layer, and an amorphous silicon film is used as a second layer. Laser light is irradiated to crystallize the amorphous semiconductor films, whereby a good semiconductor film is obtained. In addition, TFTs are fabricated by using such a semiconductor film.

Abstract: A light irradiation apparatus includes a light modulation element which has a phase step having a phase difference substantially different from 180°, an illumination optical system which illuminates the light modulation element, and an image formation optical system which forms, on an irradiation surface, a light intensity distribution based on a light beam phase-modulated by the light modulation element. The illumination optical system illuminates the light modulation element with an illumination light beam inclined in a direction normal to a step line of the phase step.

Abstract: A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the transmission patterns of one block and the transmission patterns of another adjacent block being complimentary with each other and the mask including at least two diffraction patterns disposed between the transmission patterns; forming a first crystallization region on the amorphous silicon layer by irradiating a laser beam through the transmission patterns of the mask; and displacing the substrate or the mask by a predetermined distance and irradiating a laser beam onto the substrate to recrystallize the crystallization region using the laser beam that passes through the diffraction patterns, and forming a second crystallization region using the laser beam that passes through the transmission patterns.

Abstract: The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer. An ingot of a silicon single crystal is grown by way of Czochralski single crystal pulling method, this silicon single crystal ingot is sliced to produce a wafer, then a surface layer of the wafer is annealed for between 0.01 microseconds and 10 seconds (inclusive) by means of a laser spike annealing apparatus such that a temperature of a wafer surface layer part is between 1250° C. and 1400° C. (inclusive).

Abstract: Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

Abstract: A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample.

Abstract: In the case of the epitaxial growth according to the prior art, a number o strips often have to be produced in a plane in order to restore an area to be repaired. This leads to overlapping and misorientation of the crystalline structures. In the case of the method according to the invention, the strip is of such a width that no overlapping occurs, since the width is adapted to the contour of the area to be repaired.

Abstract: A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.

Abstract: When a laser beam is radiated on a semiconductor film under appropriate conditions, the semiconductor film can be crystallized into single crystal-like grains connected in a scanning direction of the laser beam (laser annealing). The most efficient laser annealing condition is studied. When a length of one side of a rectangular substrate on which a semiconductor film is formed is b, a scanning speed is V, and acceleration necessary to attain the scanning speed V of the laser beam relative to the substrate is g, and when V=(gb/5.477)1/2 is satisfied, a time necessary for the laser annealing is made shortest. The acceleration g is made constant, however, when it is a function of time, a time-averaged value thereof can be used in place of the constant.

Abstract: A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.

Abstract: Methods for repair of single crystal superalloys by laser welding and products thereof have been disclosed. The laser welding process may be hand held or automated. Laser types include: CO2, Nd:YAG, diode and fiber lasers. Parameters for operating the laser process are disclosed. Filler materials, which may be either wire or powder superalloys are used to weld at least one portion of a single crystal superalloy substrate.

Abstract: The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

Abstract: It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that can perform uniform a process with a laser beam to an object uniformly. The present invention provides a laser apparatus comprising an optical system for sampling a part of a laser beam emitted from an oscillator, a sensor for generating an electric signal including fluctuation in energy of the laser beam as a data from the part of the laser beam, a means for performing signal processing to the electrical signal to grasp a state of the fluctuation in energy of the laser beam, and controlling a relative speed of an beam spot of the laser beam to an object in order to change in phase with the fluctuation in energy of the laser beam.

Abstract: Monolithic integrated crystalline-structure-processed arrays of mechanical, and combined mechanical and electrical devices, and related systems and processing methods.

Abstract: A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.

Abstract: A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimized.

Abstract: A liquid crystal display device is manufactured by first forming a crystalline semiconductor film 2103, of silicon for example, over an insulating substrate 2101, such as glass. The substrate is warped in the process. The warpage is corrected by suction against a stage 2201. The film crystallinity is enhanced by scanning with a linear laser beam.

Abstract: A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than ±1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.

Abstract: A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

Abstract: Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor single crystal or a group VI element component in the II-VI compound semiconductor single crystal is reduced less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal in a pattern-shaped portion.

Abstract: A method for producing crystals and/or crystal materials is described whereby the undesirable impurities are removed from the crystal and/or the material with the aid of a purification agent or getter. Elemental fluorine and/or a reactive fluorine-containing substance is used as the purification agent or getter. Preferred getters are XeF2 and/or carbon fluoride. Crystals obtained in this manner are suitable for use as optical components.

Abstract: The method for manufacture of especially large-volume single crystals of uniform orientation includes growing the single crystals with the help of a crystal seed. The method includes producing or introducing a melt of crystal raw material into a melt vessel with a vessel cross-section determined by a bottom and a wall of the melt vessel, arranging the crystal seed on the bottom of the melt vessel with an orientation of the single crystal to be grown and then slowly cooling the melt to or below a melting point of the crystal raw material, starting from a surface of the crystal seed, so that the single crystal is grown with the uniform orientation. A part of an already grown single crystal is cut off to form the crystal seed with a dimension that entirely covers the vessel cross-section at the bottom of the melt vessel.

Abstract: A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.

Abstract: A laser irradiating apparatus includes a cylindrical lens group that divides a laser beam and a cylindrical lens that re-couples a laser beam as divided. The cylindrical lens is shaped in a parallelogram whose angles are not a right angle, thereby being capable of dispersing a portion where interference is strengthened in a laser beam to restrain irradiation unevenness.

Abstract: A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

Abstract: A line beam is irradiated such that edge lines of the beam extend in a direction at an angle of 45° with respect to the vertical direction or the horizontal direction. As a result, a laser defective crystallization region R′ where the grain size has not become sufficiently large due to unevenness in intensity of the line beam passes at 45° across the carrier path connecting source and drain regions S and D to each other. The defective crystallization region R′ thus does not completely divide between the contact region CT, i.e., the carrier path between the source and drain regions. Therefore, a carrier path CP can be securely maintained without passing through the defective crystallization region R′, so that the ON-current is prevented from being reduced. Deterioration or unevenness in transistor characteristics caused by unevenness in intensity of laser irradiation can thus be prevented.

Abstract: Disclosed is a method capable of producing, at a high throughput, a large-area FPD such as a liquid crystal display panel or O-ELD having a horizontal scanning circuit portion including a TFT characteristic having a high drive current (a high mobility), and a pixel portion and a vertical scanning circuit portion each of which contains crystal grains excellent in uniformity.

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

Abstract: A calcium fluoride crystal in which the light transparency does not deteriorate with consecutive irradiation by high output short wavelength light over long time periods. A calcium fluoride crystal in accordance with the present invention has an internal transmittance of 70% or more for light of a 135-nm wavelength or more. A calcium fluoride crystal contains any one of strontium, aluminum, silicon and magnesium, with the strontium content ranging from 1 ppm to 600 ppm, the aluminum content ranging from 1 ppm to 50 ppm, the silicon content ranging from 1 ppm to 50 ppm, or the magnesium content ranging from 1 ppm to 10 ppm. A calcium fluoride crystal has an internal transmittance of 70% or more for light of a 135-nm wavelength or more and contains 1 ppm or less of La and 10 ppm or less of Y. An optical system for an excimer laser in accordance with the present invention comprises a lens comprising any calcium fluoride crystal set forth above.

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

Abstract: Semiconductor integrated devices such as transistors are formed in a film of semiconductor material formed on a substrate. For improved device characteristics, the semiconductor material has regular, quasi-regular or single-crystal structure. Such a structure is made by a technique involving localized irradiation of the film with one or several pulses of a beam of laser radiation, locally to melt the film through its entire thickness. The molten material then solidifies laterally from a seed area of the film. The semiconductor devices can be included as pixel controllers and drivers in liquid-crystal display devices, and in image sensors, static random-access memories (SRAM), silicon-on-insulator (SOI) devices, and three-dimensional integrated circuit devices.

Abstract: It is an object of the present invention to provide a calcium fluoride crystal in which the light transparency does not deteriorate with consecutive irradiation by high output short wavelength light over long time periods. A calcium fluoride crystal in accordance with the present invention has an internal transmittance of 70% or more for light of 135-nm wavelength or over. A calcium fluoride crystal contains any one of strontium, aluminum, silicon and magnesium, with the strontium content ranging from 1 ppm to 600 ppm, the aluminum content ranging from 1 ppm to 50 ppm, the silicon content ranging from 1 ppm to 50 ppm, or the magnesium content ranging from 1 ppm to 10 ppm. A calcium fluoride crystal has an internal transmittance of 70% or more for light of 135-nm wavelength or over and contains 1 ppm or less of La and 10 ppm or less of Y. An optical system for an excimer laser in accordance with the present invention comprises a lens comprising any calcium fluoride crystal set forth above.

Abstract: Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500° C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

Abstract: In a method of manufacturing a semiconductor laser device having a double hetero structure which is structured by at least a first clad layer, an active layer and a second clad layer on a semiconductor substrate by the use of the organic metal vapor growth method, crystal is grown in first atmosphere gas containing hydrogen in a temperature rising process. Subsequently, the first atmosphere gas is switched into second atmosphere gas in a temperature dropping process after the crystal growth. The second atmosphere gas contains no hydrogen.

Abstract: A method of crystallizing an amorphous silicon layer to form a polycrystalline silicon layer having uniform and large grain sizes using an improved laser beam profile despite a reduced overlapping ratio. The polycrystalline layer is formed by melting the amorphous silicon layer completely, forming a polycrystalline silicon layer having fine grains by crystallizing the melted silicon layer, re-melting the fine grains in the polycrystalline silicon layer except a portion of the layer at a lower interface thereof, and re-crystallizing the silicon layer including the unmelted portion.