Abstract: An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope is sealed at a preset pressure. The solid is heated in an oven at an oven temperature substantially below the melting or vaporization temperature of the substance at the preset pressure for a time sufficient to either melt or vaporize the substance.

Abstract: An apparatus and method for heating materials or substances in an oven at an oven temperature below their melting and/or vaporization points to either melt and/or vaporize the substance. Substances are inserted into a substantially spherical envelope. The envelope is sealed at a preset pressure. The solid is heated in an oven at an oven temperature substantially below the melting or vaporization temperature of the substance at the preset pressure for a time sufficient to either melt or vaporize the substance.

Abstract: A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

Abstract: A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound and/or Ru metal. The mixture is sintered at a primary temperature of 900° C. to 1300° C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape that is again sintered, this time at a secondary temperature of 1000° C. to 1500° C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Abstract: A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable.

Abstract: The present invention allows one to use a phase I reactor to make thinner silver halide grains. This is accomplished by introducing the halide salt solution and the silver salt solution as close as possible to each other above the mixer head. The reactor is essentially divided into a micro reaction zone and a bulk reaction zone, thus, emulating the effect of a phase II or two stage reactor.

Abstract: A method for shape controlled synthesis of colloidal metal nanoparticles includes providing a solution of 8.times.10.sup.-5 M K.sub.2 PtCl.sub.4 and water in a reaction vessel and maintaining the vessel at a constant temperature of approximately 25.degree. C. 0.1 M sodium polyacrylate is then added to the solution. Thereafter, argon gas is bubbled through the solution for approximately 20 minutes, and then hydrogen gas is bubbled through the solution for approximately 5 minutes to saturate the solution and so that platinum ions in the solution are reduced. The reaction vessel is sealed and the solution is allowed to stand for approximately 12 hours, whereby platinum colloidal nanoparticles possessing a particular shape distribution and size distribution are formed. The shape and size distributions of produced nanoparticles can be manipulated by changing the ratio of the concentration of sodium polyacrylate to platinum ions in a subsequently formed solution while maintaining all other variables constant.

Abstract: By using a dual ion-beam sputtering apparatus, an aluminum thin-film is formed on a glass substrate made of an amorphous material. While radiating an ion beam for assisting the film formation from an ion source onto the glass substrate, the aluminum thin-film is formed by depositing the sputtering ions which are generated by radiating an ion beam onto an aluminum target.

Abstract: The present invention relates to methods and compositions for the growth and alignment of crystals at biopolymeric films. The methods and compositions of the present invention provide means to generate a variety of dense crystalline ceramic films, with totally aligned crystals, at low temperatures and pressures, suitable for use with polymer and plastic substrates.

Abstract: A dimethylamine silver bromide complex is used as a single source precursor for nucleation of silver bromide crystals.

Abstract: A dimethylamine silver chloro-iodide complex is used as a single source precursor for iodide incorporation in silver chloride crystals.

Abstract: A dimethylamine silver chloride complex is used as a single source precursor for nucleation of silver chloride crystals.

Abstract: A dimeitylarnine silver bromo-iodide complex is used as a single source precursor for iodide incorporation in silver bromide crystals.

Abstract: A method of growing, in a vapor phase, a gold film having high electro-migration resistance and a flat surface, and capable of being buried in contact holes disposed in an insulating film of an integrated circuit device, for example, at a practical growing rate. Dimethylgold hexafluoroacetylacetonato (DMAu(hfac)), for example, is used as a starting gas, and vapor growth is carried out under specific conditions by utilizing thermal CVD. Adhesion of the gold film can be improved by converting it to a two-layered film by the combination of plasma enhanced CVD with thermal CVD.

Abstract: A multilayer structure has an a nonlinear optical film epitaxially grown on an underlying buffer layer of substantially lower refractive index. The buffer layer itself is epitaxially grown on a single crystal substrate with an intermediate epitaxial electrode.

Abstract: A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

Abstract: This invention concerns itself with an improved method of producing sharply defined misfit dislocations; (MD) with a new, inexpensive method of doping these misfit dislocations with Au; with invention that a combination of Au and Pt doping in misfit dislocations is superior to any amount of Au and to some specific placements of the misfit dislocations in the device structure.

Abstract: A single-crystal substrate is prepared which has the (100) crystal plane with a step line formed therein by cleaving an MgO single crystal. By evaporating metal onto the cleavage plane, with a mask wire of platinum disposed at a distance from the cleavage plane and extended in a direction across the step line, a pair of metal thin film electrodes separated by a gap are epitaxially grown. By this, a step line corresponding to the cleavage-plane step line is formed in the surface of each of the metal thin film electrodes. Metal is further evaporated onto the metal thin film electrodes at a low rate, by which nano-size thin wires extending along the step lines are grown so that they approach each other and are finally connected to each other.