Abstract: Terbium-based Faraday rotators, optical isolators incorporating the Faraday rotators, and methods for forming the Faraday rotators are described. Formation methods include hydrothermal growth methods for forming monolithic single crystals of TbO(OH) as Faraday rotator materials. TbO(OH) can also be used as a starting material in a hydrothermal growth method to form monolithic single crystals of TbxYb(2-x)O3, in which x is between about 0.05 and about 1 or terbium aluminum garnet TAG for use as a Faraday rotator in an optical isolator.

Abstract: A plurality of insertion holes for inserting one end of each of a plurality of cells is formed on the surface of a support substrate. One end of each of the cells is loosely fitted in the corresponding insertion hole. A joining material is provided so as to fill at least a gap present between the inner wall of the insertion hole and the outer wall of the one end of the cell in each joining portion between each of the insertion holes and one end of the corresponding cell. As the joining material, crystallized glass which includes a plurality of kinds of crystal phases generated when the crystallization of amorphous glass heated up to a crystallization temperature proceeds is used, and a volume reduction ratio (crystallization shrinkage ratio) of the joining material caused by the crystallization at the crystallization temperature is 0.78% or more and 12% or less.

Abstract: Current measuring device keeps fluctuation range for the ratio error in output within ±0.5% range and simplified assembly thereof. The measuring device includes at least a light entrance and exit, optical fiber for a sensor, Faraday rotator, first and second ¼-wavelength plates, polarization separator, light source, and signal-processing-circuit including a photoelectric-conversion-element. Optical fiber for a sensor has birefringence and includes one end wherein two circularly polarized light-beams having different rotation enter directions and another end reflects circularly polarized light-beams entered. Phase difference of two linearly polarized light-beams in the round-trip light path between two ¼-wavelength plates is compensated, and the Faraday rotational angle when the Faraday rotator is magnetically saturated set to 22.5°+?° so fluctuation range for ratio error in measured value of the current to be measured is set in range, ±0.5%.

Abstract: An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

Abstract: The invention relates to an inorganic scintillator material of formula Lu(2-y)Y(y-z-x)CexMzSi(1-v)M?vO5, in which: M represents a divalent alkaline earth metal and M? represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

Abstract: A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm?2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals.

Abstract: The invention relates to an inorganic scintillator material of formula Lu(2-y)Y(y-z-x) CexMzSi(1-v)M?vO5, in which: M represents a divalent alkaline earth metal and M? represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2; z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2; x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling. The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

Abstract: A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400 DEG C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5?xAlxSiO14 (wherein RE represents a rare earth, and 0<X<5), RE3Ta0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<X<5.5) and RE3Nb0.5Ga5.5?xAlxO14 (wherein RE represents a rare earth, and 0<x<5.5) and by exhibiting a 100 to 600° C. resistivity change of ?104. The process for producing the same is characterized by growing a single crystal from a solution in an atmosphere of inert gas containing an oxidative gas and thereafter cooling the single crystal in an inert gas whose oxidative gas molar fraction (z) is lower than in the above growing step.

Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.

Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2 with sufficiently short reaction times.

Abstract: Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.

Abstract: It is an object of the present invention to provide a magnetic garnet single crystal capable of reducing the optical loss of the resulting rotator even when the magnetic garnet single crystal is grown using a solvent containing Na by the liquid phase epitaxial process, as well as a Faraday rotator using the same. A magnetic garnet single crystal represented by the chemical formula Bi?Na?M13-?-?-?M2?Fe5-?-?Mg?M3?O12 (M1 is at least one element or more selected from Y, Eu, Gd, Tb, Dy, Ho, Yb and Lu; and M2 is at least one element or more selected from Ca and Sr; M3 is at least one element or more selected from Si, Ge, Ti, Pt, Ru, Sn, Hf and Zr, provided that 0.60<??1.50, 0<??0.05, 1.35<3??????<2.40, 0???0.10, 0???0.10, 0<??0.10, 0<?+??0.10, 0<?+??0.10).

Abstract: The invention relates to an inorganic scintillator material of formula Lu(2?y)Y(y?z?x)CexMzSi(1?v)M?vO5, in which: M represents a divalent alkaline earth metal and M? represents a trivalent metal, (z+v) being greater than or equal to 0.0001 and less than or equal to 0.2, z being greater than or equal to 0 and less than or equal to 0.2; v being greater than or equal to 0 and less than or equal to 0.2, x being greater than or equal to 0.0001 and less than 0.1; and y ranging from (x+z) to 1. In particular, this material may equip scintillation detectors for applications in industry, for the medical field (scanners) and/or for detection in oil drilling, The presence of Ca in the crystal reduces the afterglow, while stopping power for high-energy radiation remains high.

Abstract: The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}<0.

Abstract: The present invention provides an inorganic scintillator including a matrix material comprising a metal oxide, and a luminescence center made of Ce contained in the matrix material, the inorganic scintillator being adapted to scintillate in response to a radiation; wherein the matrix material further comprises a dopant having a tetravalent ionization energy I [kJ·mol?1] satisfying the condition represented by the following expression (1): 3000?I?3500.

Abstract: A scintillator composition is disclosed, containing a solid solution of at least two cerium halides. A radiation detector for detecting high-energy radiation is also described herein. The detector includes the scintillator composition mentioned above, along with a photodetector optically coupled to the scintillator. A method for detecting high-energy radiation with a scintillation detector is also described, wherein the scintillation crystal is based on a mixture of cerium halides.

Abstract: A single crystal of quartz thin film and a production method therefor are provided. A method for producing a quartz epitaxial thin film comprises the steps of vaporizing a silicon alkoxide as a silicon source under atmospheric pressure to introduce the silicon alkoxide to a substrate with hydrogen chloride as a reaction promoter, and reacting ethyl silicate with oxygen to deposit a quartz on the substrate. The single crystal of quartz thin film has excellent crystalinity, and optical properties.

Abstract: Inventions relates to scintillation substances and they may be utilized in nuclear physics, medicine and oil industry for recording and measurements of X-ray, gamma-ray and alpha-ray, nondestructive testing of solid states structure, three-dimensional positron-emission tomography and X-ray tomography and fluorography. Substances based on silicate comprising lutetium and cerium characterized in that compositions of substances are represented by chemical formulae CexLu2+2y?xSi1?yO5+y, CexLiq+pLu2?p+2?y?x?zAzSi1?yO5+y?p, CexLiq+pLu9.33?x?p?z?0.67AzSi6O26?p, where A is at least one element selected from group consisting of Gd, Sc, Y, La, Eu, Tb, x is value between 1×10?4 f.units and 0.02 f.units., y is value between 0.024 f.units and 0.09 f.units, z is value does not exceeding 0.05 f.units, q is value does not exceeding 0.2 f.units, p is value does not exceeding 0.05 f.units.

Abstract: The invention is directed to method of preparing metal fluoride single crystals and particularly to crystals where the metal is calcium, barium, magnesium or strontium, or a mixture thereof. The invention uses a decreasing fast cooling profile and an increasing slow cooling profile for the hot zone and the cold zone, respectively, after crystal formation during cooling from melt temperatures to a first temperature. A substantially constant cooling rate is then applied to the both zones during cooling from the first temperature to a final temperature, usually room temperature. It has been found that the substantially constant cooling rate during the annealing process results in crystals having improved homogeneity and birefringence.

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: The invention provides a process for growing UV region <200 nm transmitting calcium fluoride monocrystals, which includes crystallization from the melt, the annealing of the crystals and subsequent cooling, in a vacuum furnace, and which is effected by the continuous transfer of the crucible containing the melt from the crystallization zone into the annealing zone, each of these two zones having its own independent control system for the process parameters, characterized in that there is a temperature drop of 250-450° C. from the crystallization zone to the annealing zone, with a gradient of 8-12° C./cm, the crucible containing the material to be crystallized is moved from the crystallization zone to the annealing zone at a speed of 1-3 mm/hour, it is first kept in the annealing zone at a holding temperature of 1100-1300° C. for 20-40 hours and is then cooled first to 950-900° C. at a rate of 2-40° C./hour and then to 300° C. at a rage of 5-8° C.

Abstract: A single crystal of a silicate of a rare earth element herein provided is characterized in that it has a Ce concentration of not less than 0.6 mole % and not more than 5 mole % and that it has a light transmittance, as determined at a wavelength of 450 nm, of not less than 75%. The single crystal permits the solution of the problems associated with the conventional techniques or the problems concerning the coloration of the resulting single crystal and the reduction of the light transmittance thereof, which are disadvantages observed when the Ce concentration of the single crystal is increased to reduce the fluorescence-attenuation time. The single crystal thus permits the high-speed diagnosis of PET devices.

Abstract: A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.

Abstract: A Faraday rotator whose Faraday's rotational angle has low temperature-dependency; a method for efficiently preparing the same; a magneto-optical element which makes use of the Faraday rotator and whose characteristic properties are not susceptive to temperature changes; and an optical isolator, which can be provided at a low price. A Faraday rotator consists of a garnet crystal represented by the following compositional formula and having a lattice constant of 12.470 ±0.013 Å: (Tb1−(a+b+c)LnaBibM1c)3(Fe1−dM2d)5O12 in the formula, Ln is an element selected from the group consisting of rare earth elements other than Tb; M1 represents an element selected from the group consisting of Ca, Mg and Sr; M2 is an element selected from the group consisting of Al, Ti, Si and Ge; and a to d are numerals satisfying the following relations: 0≦a≦0.5, 0<b≦0.2, 0≦c≦0.02 and 0≦d≦0.1.

Abstract: Si nanocrystals are formed by irradiating SiO2 substrates with electron beams at a temperature of 400° C. or higher, thereby causing electron-stimulated decomposition reaction. As a result of the said reaction, single crystalline Si nanostructures are fabricated on the SiO2 substrate with good size and positional controllability.

Abstract: A method of making polycrystalline magnesium orthosilicate including the steps of contacting a silica based clay material with magnesium oxide; and sintering the magnesium oxide contacting the silica based clay material to cause a solid state diffusion of the magnesium oxide into the silica based clay material to thereby produce polycrystalline magnesium orthosilicate. Single crystalline magnesium orthosilicate can be made by melting under controlled conditions, the polycrystalline magnesium orthosilicate.

Abstract: A radio frequency automatic identification system detects targets which include solid resonators resonating at several frequencies, attributing information to the frequencies at which the target resonates. Preferred resonators are quartz crystals, which may be made by a process of heating quartz to soften it and cutting crystals to approximate size and resonant frequency. Resonators produced by such a process are measured to determine their actual resonant frequency, and preferably the crystals are sorted into predetermined frequency windows in accordance with their measured resonant frequency. A set of resonators having frequencies corresponding to predetermined data is selected from the sorted groups of resonators and incorporated into a target. The preferred target is an ink-like material having a plurality of resonators disposed in a matrix which is radio frequency transparent at the frequency of interest.

Abstract: The growth of bismuth silicate crystals occurs in a high pressure vessel or autoclave using a hydrothermal growth process. The nutrient material is placed in a sealed container of noble metal, liner, along with a solvent to a selected fill level. A filler fluid is also placed between the liner and the pressure vessel. The oriented seeds are placed in the cooler top seed zone over a baffle that slows the movement of supersaturated liquid from the hotter lower nutrient zone. Using a selected heating schedule for the top and the bottom zones, a plurality of large crystals are grown in the seed zone. The temperature differential is about 5.degree. C.