Abstract: A method of forming metal nanostructures is a low temperature closed space vacuum deposition method. The method includes disposing a source material in an enclosed space at low evaporation temperatures to controllably form nanostructures of different dimensionalities on a substrate. The nanostructures have dimensionalities determined by a chosen evaporation temperature. An apparatus is also provided for performing the method.

Abstract: The present invention relates to a manufacturing method for single crystalline metal foil including: thermally treating poly-crystalline metal foil positioned to be spaced apart from a base to manufacture single crystalline metal foil, and a single crystalline metal foil manufactured thereby. According to the present invention, single crystalline metal foil having a large area may be obtained by thermally treating the poly-crystalline metal foil under a condition at which stress applied to the poly-crystalline metal foil is minimized.

Abstract: Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Abstract: In a method and system for laser induced forward transfer (LIFT), energy (E1,E2) is deposited according to a non-Gaussian intensity profile (Ixy) which is spatially tuned across an interface (11xy) of the donor material (11m) to cause the donor material (11m) to be ejected from the donor substrate as an extended jet (Je) momentarily bridging the transfer distance (Zt) between the donor substrate (11) and the acceptor substrate (12) during a transfer period (Tt). A locally increased intensity spike (Is) at a center of the intensity profile (Ixy) causes a relatively thick jet (J1) of donor material to branch into a relatively thin jet (J2) at a branching position (J12) between the donor substrate (11) and acceptor substrate (12). The thick jet (J1) allows a relatively large transfer (Zt) distance while the thin jet (J2) deposits a relatively small droplet (Jd) of donor material (11m).

Abstract: Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

Abstract: In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.

Abstract: The invention relates to an evaporation cell (1) for vacuum evaporation chamber, the evaporation cell (1) comprising a crucible (5), the crucible (5) being adapted to receive a solid or liquid material to be sublimated or evaporated, heating means (3) to heat the material in the crucible, a nozzle (6) placed at an open end of the crucible (5), the nozzle (6) comprising a frustoconical portion (61) having an opening (60) adapted for the passage of a flow of evaporated or sublimated material towards the vacuum evaporation chamber, and a cover (7) placed on the nozzle (6), the cover (7) having an opening (70) arranged about the frustoconical portion (61) of the nozzle (6). According to the invention, the cover (7) has at least one frustoconical portion (71, 72, 73) arranged about the frustoconical portion (61) of the nozzle (6), the cover (7) forming a thermal barrier between the crucible (5) and the vacuum evaporation chamber.

Abstract: In situ dynamic protection of an optical element surface against degradation includes disposing the optical element in an interior of an optical assembly for the FUV/VUV wavelength range and supplying at least one volatile fluorine-containing compound (A, B) to the interior for dynamic deposition of a fluorine-containing protective layer on the surface. The protective layer (7) is deposited on the surface layer by layer via a molecular layer deposition process. The compound includes a fluorine-containing reactant (A) supplied to the interior in a pulsed manner. A further reactant (B) is supplied to the interior also in a pulsed manner. An associated optical assembly includes an interior in which a surface is disposed, and at least one metering apparatus (123) that supplies a reactant to the interior. The metering apparatus provides a pulsed supply of the compound as a reactant (A, B) for layer by layer molecular layer deposition.

Abstract: Vaporizers and systems for vaporizing liquid precursor for forming glass optical fiber preforms are provided. The vaporizer includes an expansion chamber at least partially enclosed by a side wall, the expansion chamber comprising an upper end and a lower end with the side wall disposed between the upper end and the lower end. The vaporizer further includes a closed-loop liquid delivery conduit positioned in the expansion chamber proximate to the upper end of the expansion chamber, wherein the closed-loop liquid delivery conduit comprises a plurality of nozzles oriented to direct a spray of liquid precursor onto an inner surface of the side wall. Further, the vaporizer includes at least one supply conduit positioned proximate the upper end of the expansion chamber and coupled to the closed-loop liquid delivery conduit, and a vapor delivery outlet coupled to the expansion chamber and configured to direct vaporized liquid precursor from the expansion chamber.

Abstract: The present invention provides a crucible and a SiC single crystal growth apparatus capable of improving the efficiency of using source materials. The crucible includes a lid and a container. The container includes a bottom facing the lid. The bottom includes a recess which is recessed towards the lid.

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The ampoules comprise an inlet plenum located between the inlet port and the cavity and an outlet plenum located between the outlet port and the cavity. A flow path is defined by a plurality of tubular walls and an ingress openings of the ampoule, through which a carrier gas flows in contact with the precursor.

Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Abstract: A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

Abstract: A Method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber; a substrate coated with at least one metal on both sides of the substrate having an average thickness, wherein the coating is deposited homogenously such that the maximum thickness of the coating can exceed the average thickness of 15% maximum. A vacuum deposition facility also is provided.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

Abstract: A vaporizer body (1) having a vaporizing surface (3) for vaporizing metal in a PVD-metallization installation, wherein the vaporizing surface (3) comprises a plurality of recesses (5, 5?, 5?), with an opening of the respective recess having an area/perimeter-ratio of greater than or equal to 1.5 mm.

Abstract: A deposition apparatus may include a chamber, a crucible in the chamber, a cover part covering the crucible, and 2n nozzles (where ‘n’ is a positive integer number) protruding from the cover part and arranged in a first direction. Among the 2n nozzles, a distance between a n-th nozzle and a (n+1)-th nozzle may be greater than a distance between a (2n?1)-th nozzle and a 2n-th nozzle.

Abstract: A film forming apparatus includes: a stage on which a workpiece on which a film is to be formed is placed; a gas supply part provided so as to face the stage, including a heater provided to be controlled to a predetermined temperature, and configured to supply a carrier gas; and a vaporization part provided between the stage and the gas supply part, and configured to be heated by heat generated from the gas supply part to vaporize a film-formation material supplied in a liquid state.

Abstract: A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

Abstract: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.

Abstract: Disclosed are a porous aluminum macroscopic body, a fabrication system, and a method therefor, where the porous aluminum macroscopic body is a three-dimensional full-through-hole structure formed by connecting hollow aluminum wires, and the wall thickness of the hollow aluminum wires is 7-100 micrometers. The fabrication system comprises a magnetron sputtering subsystem, a high-temperature aluminum vapor subsystem, a low-temperature aluminum deposition subsystem, an aluminum vapor recovery subsystem, and a porous polymer film conveying subsystem. A preparation method therefor comprises first utilizing a magnetron sputtering method to rapidly sputter on a porous polymer film to form an aluminum layer that has a thickness of 1-500 nm, and then continuing to deposit the aluminum layer to a thickness of 7-100 micrometers while decomposing the polymer film in-situ so as to obtain the porous aluminum macroscopic body.

Abstract: A method of forming metal nanostructures is a low temperature closed space vacuum deposition method. The method includes disposing a source material in an enclosed space at low evaporation temperatures to controllably form nanostructures of different dimensionalities on a substrate. The nanostructures have dimensionalities determined by a chosen evaporation temperature. An apparatus is also provided for performing the method.

Abstract: In a concentration controller that intermittently leads out material gas from a vaporization tank, in order to control the flow rates of carrier and diluent gases so that the concentration of the material gas can be suppressed from overshooting immediately after the start of material gas supply period, the concentration controller is adapted to include: a concentration calculation part that calculates the concentration of the material gas on the basis of an output signal from a concentration monitor; and a set flow rate calculation part that, on the basis of actual concentration calculated by the concentration calculation part, an actual flow rate outputted from a flow rate control device or the set flow rate of the flow rate control device, and a preset target concentration, calculates the initial set flow rate of the flow rate control device.

Abstract: A thermal insulation device includes a first plate, a second plate formed to nest adjacent the first plate with a gap between the first and second plates, a porous material disposed in the gap between the plates, a sealing layer disposed between the first and second plates such that the porous material is sealed from ambient at a pressure less than ambient, and a vapor generating material disposed in the gap.

Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Abstract: Making alkali metal vapor cells includes: providing a preform wafer that includes cell cavities in a cavity layer; providing a sealing wafer having a cover layer and transmission apertures; disposing a deposition assembly on the sealing wafer; disposing an alkali metal precursor in the deposition assembly; disposing the sealing wafer on the preform wafer; aligning the transmission apertures with the cell cavities; subjecting the alkali metal precursor to a reaction stimulus; producing alkali metal vapor in the deposition assembly; communicating the alkali metal vapor to the cell cavities; receiving, in the cell cavities, the alkali metal vapor from the transmission apertures; producing an alkali metal condensate in the cell cavity; moving the sealing wafer such that the cover layer encapsulates the alkali metal condensate in the cell cavities; and bonding the sealing wafer to the preform wafer to make individually sealed alkali metal vapor cells in the preform wafer.

Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.

Abstract: The invention is directed to a configurable vaporizer or ampoule assembly that uses a configurable vessel body, assembled from one or more support tray modules with their own individual heating assemblies or heater members, bounded by a base member and a lid member to form the whole ampoule. This eliminates the need for the prior art ampoule body that normally holds the support trays and was used to heat each of the support trays from the exterior surface using heating jackets or the like.

Abstract: The present disclosure provides a film thickness test apparatus and method, and a vapor deposition device. The film thickness test apparatus is arranged for one process cavity, and the film thickness test apparatus comprises: a test assembly; a transport assembly configured to, when moving towards the process cavity, drive the test assembly into the process cavity so that the test assembly is vapor deposited in the process cavity to form a test film, and, when moving away from the process cavity, drive the test assembly out of the process cavity; and a drive assembly configured to drive the transport assembly to move along a direction towards/away from the process cavity.

Abstract: A mass spectrum resolution device for measuring laser ablation ion species with improved time of flight mass spectrometry includes a vacuum system unit, a plasma production unit, and a particle restraint selection and separation unit, wherein the particle restraint selection and separation unit comprises a particle limit selector and a plurality of ion pulse accelerated electrode plates; the particle limit selector comprises a restrainer lifting block, a restrainer and a restrainer selection baffle; a through hole is formed in the restrainer lifting block; a plurality of circular holes with different apertures are formed in the restrainer selection baffle, and the restrainer and the restrainer selection baffle are arranged in the restrainer lifting block and can move; and the ion pulse accelerated electrode plates are arranged in the advance direction of particles and are axially parallel to the restrainer lifting block.

Abstract: A method for pairing a dialysis machine with peripheral devices is disclosed. An example method includes receiving, in an intermediate data transfer unit, data related to a patient from at least one of a weight sensor, a blood pressure sensor, or a remote exchange device. The method also includes causing the intermediate data transfer unit to detect a connection of a memory device to a port of the intermediate data transfer unit, and causing the intermediate data transfer unit to store the data to the memory device so that the memory device can be transported to a dialysis machine for transfer of the data from the memory device to the dialysis machine.

Abstract: A linear evaporation source and a deposition apparatus having the same are disclosed. In one aspect, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate the crucible, the nozzle section, and the heater.

Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

Abstract: Various embodiments of the presented technology include the application of a low emissivity coating, such as a vacuum chemical vapor deposited aluminum coating, to: a) a paper substrate; b) a recyclable polymer substrate; c) a biodegradable polymer substrate; d) any biodegradable substrate; e) a polymer substrate; that is then laminated to a container, such as a disposable paper coffee or tea cup. In some embodiments, the low emissivity coated laminate may be applied to the container materials prior to the materials being formed, or they may be laminated after the disposable container has been formed. The final form is a container, such as a disposable paper coffee or tea cup that has a low emissivity coating applied to all surfaces facing away from the containers contents.

Abstract: A box coating apparatus for vacuum coating of substrates comprises a vacuum chamber which contains an evaporation source for evaporating coating material and a substrate holder disposed vis-à-vis to the evaporation source so that coating material evaporated by the evaporation source can impinge on substrates held by the substrate holder. An electric heating device is centrally arranged in the vacuum chamber, which is constructed to heat up the vacuum chamber during vacuum check and cleaning routines. So as to be removable from the vacuum chamber prior to the deposition processes, the heating device is provided with a stand having a plurality of leg portions mounted to a base plate, which are sized and constructed at the base plate so that the heating device can be placed over and above the evaporation source.

Abstract: A thermal evaporation sources are described. These thermal evaporation sources include a crucible configured to contain a volume of evaporant and a vapor space above the evaporant.

Abstract: The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.

Abstract: A film formation apparatus for forming a thin film having high gas barrier performance, such as a DLC (Diamond Like Carbon) film, a SiOx film, a SiOC film, a SiOCN film, a SiNx film, and an AlOx film, on an inner surface and/or an outer surface of a container such as a PET bottle. The film formation apparatus has: a vacuum chamber for forming, in a vacuum state, a film on a surface of a container using a heat generating element; a vacuum evacuation device for vacuumizing the vacuum chamber; and a relative shifting device for relatively shifting the container and the heat generating element in the vacuum chamber after the vacuumization of the vacuum chamber.

Abstract: A film forming apparatus comprises a film forming vessel comprising a first mold and a second mold that is arranged to be opposed to the first mold. The first mold is configured to include a first recessed portion and a first planar portion arranged around the first recessed portion and an exhaust port in a bottom portion of the first recessed portion. The film forming apparatus also comprises a seal member placed between the first planar portion of the first mold and the second mold. The seal member is configured to keep inside of the film forming vessel airtight; and an exhaust device connected with the exhaust port. The work is placed away from the first planar portion such that a film formation target part of the work faces an internal space of the first recessed portion when the film forming vessel is closed.

Abstract: A thermal insulation device includes a first plate, a second plate formed to nest adjacent the first plate with a gap between the first and second plates, a porous material disposed in the gap between the plates, a sealing layer disposed between the first and second plates such that the porous material is sealed from ambient at a pressure less than ambient, and a vapor generating material disposed in the gap.

Abstract: A deposition apparatus includes a chamber, a first stage and a second stage for supporting substrates within the chamber, an evaporating source assembly moving a first stage area corresponding to the first stage and a second stage area corresponding to the second stage, and including a plurality of nozzles through which a source material is spurted, and a photographing assembly which is disposed between the first stage and the second stage and photographs the plurality of nozzles.

Abstract: A system and method for generating combustion aerosols from liquid fuel. The system includes a furnace with an inner heating tube having a heating tape wrapped thereabout. Further, the system includes a fuel line extending through an inlet end of the heating tube and into the heating tube, and a means for dripping the liquid fuel onto a plurality of different locations on an inner surface of the heating tube. The system further includes a power supply to power the heating tape to heat the inner heating tube to a temperature which can ignite the liquid fuel dripped onto the inner surface of the inner heating tube whereby there is an immediate combustion to form combustion products. Finally, the system includes an air line connected to the heating tube for directing compressed air through the inner heating tube to mix with the combustion products and transport the formed combustion aerosols out of an outlet end of the inner heating tube.

Abstract: The invention provides an evaporation deposition equipment and method, applicable to vapor-depositing an organic light-emitting layer on an array substrate with a formed anode layer, the evaporation deposition equipment comprising: a first platform, disposed with an electrode plate; a second platform, disposed above the first platform, for carrying the array substrate; a vaporizing unit, disposed at the electrode plate, for generating charged vapor-depositing material particles and spraying the charged vapor-depositing material particles towards the array substrate; a mask carrier, for fixing a mask with opening pattern between the array substrate and the vaporizing unit; an electric field forming unit, electrically connected to the array substrate and the electrode plate, for forming an electric field between the anode layer and the electrode plate, the electric field guiding the charged vapor-depositing material particles towards the array substrate to deposit to form an organic light-emitting layer corresp

Abstract: A solid source material is described for forming a tungsten-containing film. The solid source material is tungsten hexacarbonyl, wherein content of molybdenum is less than 1000 ppm. Such solid source material may be formed by a process including provision of particulate tungsten hexacarbonyl raw material of particles of size less than 5 mm, wherein particles of size greater than 1.4 mm are less than 15% of the particles, and wherein content of molybdenum is less than 1000 ppm, and sintering the particulate tungsten hexacarbonyl raw material at temperature below 100° C. to produce the solid source material as a sintered solid.

Abstract: A vaporizer body (1) having a vaporizing surface (3) for vaporizing metal in a PVD-metallization installation, wherein the vaporizing surface (3) comprises a plurality of recesses (5, 5?, 5?), with an opening of the respective recess having an area/perimeter-ratio of greater than or equal to 1.5 mm.

Abstract: In a device and a method for generating vapor in a CVD or PVD device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. In a vapor transfer phase, second heat transfer surfaces of the modulation device are adjusted to a first modulation temperature, at which the vapor passes through the modulation device without condensing on the second heat transfer surfaces. At an intermission phase, the second heat transfer surfaces are adjusted to a second modulation temperature, at which at least some of the vapor condenses on the second heat transfer surfaces.

Abstract: In various embodiments, evaporation sources for deposition processes have disposed therearound an insulation material configurable to fit snugly around the source body of the evaporation source and to be at least partially distanced away from the source body to expedite heat transfer therefrom.