Abstract: A method for laser processing a transparent workpiece includes forming a contour line that includes defects, by directing a pulsed laser beam output by a beam source through an aspheric optical element positioned offset in a radial direction from the beam pathway and into the transparent workpiece such that the portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece that produces a defect within the transparent workpiece. The portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, an effective spot size wo,eff, and a non-axisymmetric beam cross section having a minimum Rayleigh range ZRx,min in an x-direction and a minimum Rayleigh range ZRy,min in a y-direction. Further, the smaller of ZRx,min and ZRy,min is greater than F D = ? ? ? w 0 , eff 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater.

Abstract: A method for laser processing a transparent workpiece includes forming a contour line that includes defects, by directing a pulsed laser beam output by a beam source through an aspheric optical element positioned offset in a radial direction from the beam pathway and into the transparent workpiece such that the portion of the pulsed laser beam directed into the transparent workpiece generates an induced absorption within the transparent workpiece that produces a defect within the transparent workpiece. The portion of the pulsed laser beam directed into the transparent workpiece includes a wavelength ?, an effective spot size wo,eff, and a non-axisymmetric beam cross section having a minimum Rayleigh range ZRx,min in an x-direction and a minimum Rayleigh range ZRy,min in a y-direction. Further, the smaller of ZRx,min and ZRy,min is greater than F D ? ? ? ? w 0 , eff 2 ? , where FD is a dimensionless divergence factor comprising a value of 10 or greater.

Abstract: The present invention is a novel technique for setting a multiplicity of diamonds such as diamonds into a unique setting to enhance the beauty and presentation, with the technique including steps of assorting, blocking, mapping, sawing, polishing, assembling and grooving of assembling of white, naturally colored and treated color natural diamonds. The present invention provides method where each diamonds is separately processed for ultimate brilliance and cumulative refraction. The flat surfaces of the adjacent diamond are joined to form the complete design in the system. The assembled diamonds are arranged by grooving and providing support to form final pattern of the jewelry. The present process is advantageous with regards to usage of maximum utilization of raw diamond and process that gives great brilliance of large diamond and expensive appearance to user.

Abstract: Electromechanical lock utilizing magnetic field forces. An actuator is moved between a locked position and an unlocked position. In the locked position, a first permanent magnet directs a first magnetic field exerting a pushing force so that rotation of the first axle is blocked, and a second permanent magnet directs a second magnetic field exerting a pulling force so that the first axle is kept uncoupled with the second axle. In the unlocked position, the first permanent magnet directs a reversed first magnetic field exerting a pulling force so that the first axle is released to rotate, and the second permanent magnet directs a reversed second magnetic field exerting a pushing force so that the first axle becomes coupled with the second axle.

Abstract: This disclosure relates to methods of evaluating the shape of a gemstone, such as a diamond, ruby, emerald, or sapphire. Also provided are methods of identifying gemstone shape.

Abstract: A sphere size measuring unit (15) measures respective diameters of an object sphere in the course of processing and a standard sphere made of the same material as that of the object sphere and furthermore having a target diameter of the object sphere. A size difference calculation unit (161) calculates a size difference between the diameter of the object sphere and the diameter of the standard sphere. A determination unit (162) compares the obtained size difference with a threshold value so as to determine whether or not the diameter of the object sphere reaches the target value.

Abstract: A fabric folding machine contains: a body and a limiter. The body includes an external housing, an internal housing, and a connection portion. The external housing has a first peripheral fence, a second peripheral fence, and two third peripheral fences, wherein the internal housing is disposed in the external housing, and between the external housing and the internal housing is defined a through hole which has a first segment and a second segment, a height of the first segment is more than that of the second segment, and a width of the internal housing gradually decreases from the first segment to the second segment. The first peripheral fence has a first orifice defined, and the second peripheral fence has a second orifice and two guiding apertures. The limiter includes a sheet and a protrusion, and the sheet has two openings defined thereon.

Abstract: A method of imaging a cut stone. The method comprises a) identifying an orientation of a cut stone (202), b) creating a volumetric model of the cut stone according to the orientation (203), c) capturing a plurality of images of the cut stone from a plurality of viewing angles around the cut stone (204), d) cropping a plurality of segments depicting the cut stone from the plurality of images using the volumetric model (205), and e) generating a volumetric image of the cut stone from the plurality of segments (207,208).

Abstract: A laser cutting device for cutting an original product includes a laser device which is movable along a first direction and a second direction perpendicular to the first direction, and rotatable reflecting mirrors. The original product includes a stub bar, optical lenses, and connection portions corresponding to the optical lenses. The rotatable reflecting mirrors correspond to the connection portions and are positioned above the original product and aligned with the connection portions. At least two rotatable reflecting mirrors are arranged in a straight line. The laser device is located on the straight line and is configured for emitting laser beams. Each of the rotatable reflecting mirrors is configured for reflecting laser beams from the laser device toward the corresponding connection portion and is configured for rotating so as to allow the laser beams from the laser device to reach the next rotatable reflecting mirror on the straight line.

Abstract: Method for determining a cut for a gemstone, comprising selecting a generic shape for the cut; selecting a plurality of cut designs of a group of cut designs having the selected generic shape; simulating a number of optical metrics for the plurality of cut designs using simulation models having modeling coefficients; selecting one or more cut designs of the plurality of cut designs based on the simulated optical metrics; varying the geometry parameters for each selected cut design within a range, simulating a number of optical metrics for said range of geometry parameters, and determining an optimized cut design having optimized geometry parameters based on the simulated number of optical metrics for said range; cutting and polishing of the gemstone using the optimized cut design having the optimized geometry parameters; analyzing the visual appearance of the polished gemstone; changing or adapting the simulation models and/or the modeling coefficients thereof and/or the range for varying the geometry paramet

Abstract: A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones.

Abstract: Embodiments of the invention relate to bearing assemblies, bearing apparatuses, and methods of assembling and operating such bearing assemblies and apparatuses. For instance, first bearing assembly and/or the second bearing assembly may include one or more tapered sections, which may facilitate entry of the first bearing assembly into the second bearing assembly.

Abstract: A method of imaging a cut stone. The method comprises a) identifying an orientation of a cut stone, b) creating a volumetric model of the cut stone according to the orientation, c) capturing a plurality of images of the cut stone from a plurality of viewing angles around the cut stone, d) cropping a plurality of segments depicting the cut stone from the plurality of images using the volumetric model, and e) generating a volumetric image of the cut stone from the plurality of segments.

Abstract: Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.

Abstract: A non-ablative laser machining method and apparatus for cutting facets of a diamond, using a material machining technique involving filamentation by burst ultrafast laser pulses well suited to mass production. Coupled with 3D modeling and the computerized laser machining system, complex geometric surfaces can be created on the diamond. The facets of the diamond need not be planar in configuration, and may incorporate acute as well as oblique angles. This method minimizes the need for diamond polishing, speeds up production, and realizes great reductions in the quantity of lost material from the cutting process.

Abstract: A method of producing a sapphire product from a suitable precursor material is disclosed. The method comprising the steps of placing a sapphire product precursor on a support apparatus of a crystalline material processing assembly further comprising at least one cutting tool and two or more x-ray module fixedly positioned around the product precursor. The support apparatus can be tilted and rotated in order to align the crystalline plane orientations to a fixed cutting direction, and the sapphire product can be produced by cutting in that direction.

Abstract: A method for slicing a workpiece into wafers in which a polyphosphate solution is applied to the workpiece during the slicing process. The method comprises the steps of positioning the workpiece, such as a silicon ingot, in the vicinity of a wire saw that can cut through the workpiece without the use of an abrasive slurry; causing an aqueous polyphosphate solution to contact the workpiece; and causing the wire saw to cut into the workpiece while the polyphosphate solution is in contact with the workpiece. After the workpiece has been cut into wafers, the polyphosphate solution is rinsed off of the wafers. Preferably, the wire saw used in this method is a diamond wire saw.

Abstract: The invention relates to a gemstone (10) comprises a girdle (13), a crown (11) and a pavilion (12). The crown has a table (14), ten star facets (15) surrounding the table, ten bezel facets (16) aligned between the star facets and twenty upper girdle facets (20) aligned between the bezel facets. The pavilion is provided with ten pavilion main facets (24), twenty pavilion hook facets (29) aligned between the pavilion main facets and ten pavilion star facets (34) aligned between the pavilion hook facets. The invention also relates to a method of cutting the gemstone.

Abstract: An indexing unit of a gemstone processing machine and a method for processing gemstones is described herein. In an embodiment, the indexing unit of the gemstone processing machine includes a base plate having a plurality of axially extending holes. The base plate is mounted on a mounting shaft, and the mounting shaft is coupled to an indexing mechanism for actuating the base plate. Further, the indexing unit includes a plurality of holders. A holder is disposed in each of the plurality of axially extending holes of the base plate, and each holder is configured to hold a gemstone for processing on the gemstone processing machine.

Abstract: A polishing system for polishing a flat face of a rock comprises a polishing surface, a fence system, and a drive system. The polishing surface is supported for rotation about a primary rotation axis. The fence system is supported above the polishing surface. The drive system causes the polishing surface to rotate about the primary rotation axis and displace a driven portion of the fence system along a path relative to the primary rotation axis. The fence system engages the rock to prevent the polishing surface from causing the rock to move about the primary rotation axis and to cause the rock to move towards and away from the primary rotation axis.

Abstract: Systems and methods for continuous sapphire growth are disclosed. One embodiment may take the form of a method including feeding a base material into a crucible located within a growth chamber, heating the crucible to melt the base material and initiating crystalline growth in the melted base material to create a crystal structure. Additionally, the method includes pulling the crystal structure away from crucible and feeding the crystal structure out of the growth chamber.

Abstract: Systems and method for creating crystalline parts having a desired primary and secondary crystallographic orientations are provided. One embodiment may take the form of a method of manufacturing a part having a crystalline structure. The method includes melting aluminum oxide and drawing the melted aluminum oxide up a slit. Additionally, the method includes orienting the seed crystal relative to a growth apparatus such that a crystalline structure grows having a desired primary plane and a desired secondary plane orientation. Moreover, the method includes pulling the crystal as it forms to create a ribbon shaped crystalline structure and cutting a part from the crystalline structure.

Abstract: Methods related to efficient processing of sapphire are discussed which are expected to both speed manufacture of corundum for applications and make the use of conundrum cost effective. In particular, one embodiment may take the form of a method of cutting a hard transparent material having a polished surface. The method includes roughening the polished surface, directing a laser beam at the hard transparent material to melt the material and removing the melted hard material.

Abstract: The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm?2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) which may produce a “Hearts & Arrows” reflection pattern.

Abstract: The invention relates to a gemstone (10) comprises a girdle (13), a crown (11) and a pavilion (12). The crown (11) comprises a table (14), eight star facets (15) surrounding the table (14), eight first half facets (16) aligned between the star facets (15), eight second half facets (17) aligned adjacent to the first half facets (16) and sixteen upper girdle facets (20) aligned between the second half facets (17). The pavilion (12) comprises sixteen pavilion main facets (23) and sixteen lower girdle facets (25) aligned between the pavilion main facets (23). The invention also relates to a method of cutting the gemstone.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) Krupps cut gemstone.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) Asscher cut gemstone.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) Princess cut gemstone.

Abstract: A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

Abstract: A jewelry bench dust shield including a base attachable to a jewelry bench, an arm pivotally attached to said base, and a dust shield attached to said arm. A jewelry bench dust shield including a vacuum triggering pivoting arm, a trigger holding arm pivot base attachable to a jewelry bench, and a face plate connected to said arm. A jewelry bench dust shield including a base attachable to a jewelry bench, a vacuum trigger connected to said base having a wire connectable to a vacuum, an arm pivotally attached to said base, said arm having an extension portion which depresses said trigger when arm is lowered, and which releases said trigger when arm is raised, and a face plate connected to said arm.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) cushion-cut gemstone which may produce a “Hearts & Arrows” reflection pattern.

Abstract: A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones.

Abstract: The present invention protects opals during processing from rhyolite nodules. An opal containing rhyolite nodule is soaked in a heated polyester resin, styrene (100-42-5) solution for 24 hours per 10 grams of nodule. The rhyolite nodule is dried and sawed into slabs, which are soaked in a heated polyester resin, styrene (100-42-5) solution. The soaked slabs are cut into pieces, cabochons are marked out, and the pieces are rough cut into pre forms. The pre forms are soaked in a heated polyester resin, styrene (100-42-5) solution, beneficially for 24 hours. The pre forms are dried and cut into cabochons, which are soaked (preferably for 24 hours) in a heated polyester resin, styrene (100-42-5) solution. The soaked cabochons are then dried, polished, and air cured.

Abstract: The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) which may produce a “Hearts & Arrows” reflection pattern.

Abstract: A large sized bulk crystal is produced which allows to cut out a practical size of crystal substrate. The gallium nitride crystal has features in which a length L of c-axis is 9 mm or more, a crystal diameter d of a cross section orthogonal to the c-axis is 100 ?m, and a ratio L/d of the length L of the c-axis and the crystal diameter d of the cross section orthogonal to the c-axis is 7 or more. By enlarging this elongated needle-like crystal, a bulk crystal with a large volume can be produced, and a large sized bulk crystal can be produced which allows to cut out a practical size of crystal substrate.

Abstract: An improved geode breaking method, system, and apparatus are disclosed. A geode can be broken or cut into at least two pieces, or grooved with a circumferential groove. The geode pieces can be reassembled and connected to each other using a bonding material that supports the joint formed between the reassembled pieces. The bonding layer can denote a joint guideline to assist in aligning a geode breaking tool for re-breaking the geode. A support layer can be added for additional strength, support, and geode crumbling prevention. The reassembled geode can be safely and easily re-broken without crumbling the exterior and interior surface of the geode. The geode's interior crystals or concentric lines can be safely appreciated within a piece or section of a reassembled and re-broken geode.

Abstract: A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones.

Abstract: A method of producing gemstones from silicon carbide comprises growing simultaneously a plurality of moissanite crystal blanks in a graphite mold, splitting up the blanks into individual crystals, and faceting same. The plurality of grown blanks can be subjected to annealing to facilitate splitting. Faceting can comprise rough cutting, grinding and polishing. Prior to faceting, the blanks are attached to a mandrel with one side thereof. After faceting, the blanks are attached to a mandrel with their reverse side, and faceting is repeated. It is ensured that the depth of scratches be less than the length of a light wave in the visible part of the spectrum. The cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the stage of growing.

Abstract: Gemstone of natural diamond, characterised in that the gemstone (1) has two parallel faces (2-3, 4-5) in which the geometric plane that coincides with the aforementioned faces defines the volume of the gemstone (1), and from which a number of facets start, and each facet is parallel to an opposite facet or parallel to a connecting edge (6) of two other facets.

Abstract: A setting for a gemstone including a girdle, a crown on one side of the girdle, and a pavilion on the opposite side of the girdle, characterized in that the setting mounts the gemstone in an inverted orientation such that the pavilion faces outwardly of the setting and the crown faces inwardly of the setting.

Abstract: There is provided a target object processing method capable of self-breaking a target object with a laser beam. The target object processing method includes: generating a laser beam from a laser beam source; correcting a divergence angle of the generated laser beam; and forming a spot by condensing the corrected laser beam to the inside of the target object. A shape or a size of the spot is adjusted by correcting the divergence angle of the laser beam, a phase transformation area is formed within the target object by the spot, and the target object is subject to self-breaking with the phase transformation area as the starting point.

Abstract: A stone for jewelry is provided that includes a first layer made of a first material; a second layer made of a second material bonded to the first layer; and a third layer made of a third material bonded to the second layer. The second material or layer is preferably made of a colored gel sheet.

Abstract: Cut product manufactured from a (semi) precious stone material, more particularly from natural or synthetic diamond, comprising a lower part (pavilion) with a bottom end (culet); an upper part (crown) having a number of girdle bezel facets and a top end (a point with table width 0 or a top surface (table) with a table width); and a girdle between said lower part and said upper part, wherein said lower part comprises a number of girdle pavilion facets which describe a first angle ?1 relative to the plane of the girdle and a number of culet facets which each describe a smaller second angle ?2 relative to the plane of the girdle; and wherein the girdle bezel facets are in a twisted position with respect to the girdle pavilion facets in the sense that the bezel facets have perpendicular bisectors which are not coplanar with the perpendicular bisectors of the girdle pavilion facets; and wherein the ratio of the table width and the width of the girdle is 0 to 0.40.

Abstract: The disclosure relates to the inclusion of an image embedded in or on a single crystal diamond such that the image is part of the single crystal diamond structure. The disclosed methods use a combination of gemstone deposition processes and patterning processes to create single crystal gemstones with embedded color variations that can create externally visible two-dimensional or three-dimensional images in a seamless single crystal matrix without visible internal lines/interfacial boundaries. The image embedded image is differently colored from the surrounding diamond matrix. The color variation is accomplished by a change in the diamond growth conditions or treatment of the diamond.

Abstract: A method for producing a sapphire single crystal, which includes: performing a sapphire single crystal growth step wherein a sapphire ingot, which is an ingot of sapphire single crystal, is produced (step 101); performing a subsequent ingot heating step wherein the sapphire ingot obtained in the sapphire single crystal growth step is heated (step 102); and performing a subsequent ingot processing step wherein the heated sapphire ingot is machined (step 103). In the ingot heating step, the sapphire ingot is heated in an atmosphere in which the oxygen concentration is increased to be equal to or higher than that in the air. Consequently, crystal defects in the ingot of sapphire single crystal produced by crystal growth are removed and the occurrence of cracks in the sapphire ingot during machining of the sapphire ingot is suppressed, thereby improving the yield of sapphire products obtained from the ingot.

Abstract: The object of the present invention is a setting for a gemstone or diamond having a groove cut, based on gemstone or diamond shape, which acts as the setting. The groove in the gemstone or diamond is on the side surface or edge or other parameter which surrounds the face of the gemstone or diamond. The setting material is inserted into the groove and connected together outside or inside the groove, forming the frame around the gemstone or diamond. Once the frame is connected it becomes the setting.

Abstract: In a method of taking a star facet of a diamond and extending its length to the girdle (the outside perimeter) of the diamond, a shield style (obelisk-shaped) facet is produced in rounds and fancy cut diamonds, and on square and off squares it remains a three-sided facet but is made larger and longer. The facet becomes larger than it was previously. It becomes a five-sided facet when it was a three before (or a much larger three-sided facet on squares and off squares). The reason it becomes five-sided is because when the facet is extended it collides with the bezel and both upper girdle facets as it extends to the girdle on rounds and fancy cut diamonds. The new facet on square and off square becomes longer and larger but remains three-sided. When the new star facet of rounds, fancy, square and off square diamonds collide with the others it produces a new larger facet and makes an exchange of positions of the previous largest facet which is true of all rounds, fancy, square and off square.

Abstract: In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.

Abstract: The color stone 1 is formed of a material with a refractive index n of 1.55 to 2.40, and is subjected to round brilliant-cutting. The pavilion angle p and the crown angle c satisfy the correlation of, ?A(n)×p+B(n)+K1?c??A(n)×p+B(n)+K2 where, A(n) is represented by A(n)=?1.122×n5+9.14×n4?26.752×n3+32.982×n2?12.842×n, B(n) is represented by B(n)=?22.323×n5+184.166×n4?527.616×n3+594.102×n2?128.68×n, K1 is represented by K1=+4, and K2 is represented by K2=?4.