Abstract: A method for cleaning a semiconductor wafer is provided. The method includes placing a semiconductor wafer over a supporter arranged around a central axis of a spin base. The method further includes securing the semiconductor wafer using a clamping member positioned on the supporter. The movement of the semiconductor wafer during the placement of the semiconductor wafer over the supporter is guided by a guiding member located over the clamping member. The method also includes spinning the semiconductor wafer by rotating the spin base about the central axis. In addition, the method includes dispensing a processing liquid over the semiconductor wafer.

Abstract: A wafer processing apparatus includes a rotating chuck which is rotatably installed inside a cup housing and on which a substrate is mounted, a nozzle table rotatably installed inside the rotating chuck, a guide installed inside the nozzle table, a moving module movably installed on the guide, a guide arm configured to support a fluid supply line part, a lower nozzle part coupled to the guide arm to move together with the moving module and connected to the fluid supply line part, a driving shaft part connected to the rotating chuck and the nozzle table to rotate the rotating chuck and the nozzle table, a moving shaft rotatably installed inside the driving shaft part and connected to the moving module to move the moving module, and a driver connected to the driving shaft part and the moving shaft.

Abstract: A substrate holding mechanism for holding a substrate placed on a stage which is rotatable with respect to a turntable, includes a substrate holding member, provided at a peripheral portion of the stage, fixed to a rotating shaft disposed below a surface on which the substrate is placed, and contactable to a side surface of the substrate placed on the stage, a biasing member having a first end fixed to the substrate holding member at a position closer to a center of the stage than the rotating shaft, and a second end fixed at a position separated from the substrate holding member toward the center of the stage and below the rotating shaft, and a pressing member configured to press upwardly a portion of the substrate holding member where the first end of the biasing member is fixed.

Abstract: A developing treatment apparatus for performing a developing treatment on a treatment object substrate. The developing treatment apparatus includes: a rotating and holding part that holds and rotates the treatment object substrate; a discharger that discharges a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer that supplies ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

Abstract: A method for polishing a silicon wafer, including: a first polishing step of polishing a silicon wafer surface by bringing the wafer held by a polishing head into sliding contact with a polishing pad attached to a turn table while supplying an aqueous alkaline solution containing abrasive grains onto the polishing pad, and a second polishing step of polishing the silicon wafer surface by bringing the wafer into sliding contact with the polishing pad while supplying an aqueous alkaline solution containing a polymer without containing abrasive grains onto the polishing pad, wherein the surface temperature of the polishing pad is controlled such that the surface temperature of the polishing pad in the second polishing step is higher than the surface temperature of the polishing pad in the first polishing step by 2° C. or more. This successfully achieves both of higher flatness and reduction in surface roughness.

Abstract: Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. When the inside of the processing container is decompressed from a first pressure at which the processing fluid is in the supercritical state to an atmospheric pressure, through a second pressure than the first pressure and a third pressure lower than the second pressure, the controller controls a valve opening degree of the discharge valve so that the decompression rate is equal from the second pressure to the third pressure.

Abstract: Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates the substrate; a supercritical processing liquid supply unit that supplies a supercritical processing liquid to the substrate; a heating unit that heats an inside of the chamber; and a discharge unit that discharges a fluid in the chamber from the chamber. The controller controls the supercritical processing liquid supply unit, the heating unit, and the discharge unit such that the supercritical processing liquid is supplied to the substrate before or after the substrate is accommodated in the chamber, the inside of the chamber is heated to change the supercritical processing liquid into a supercritical fluid or a subcritical fluid, and the supercritical fluid or the subcritical fluid is discharged from the chamber.

Abstract: A system for lithography patterning includes a first supply pipe for supplying a first solution; a second supply pipe for supplying a second solution; a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture; a substrate stage for holding a substrate; a supply nozzle coupled to the third supply pipe for dispensing the mixture to the substrate; a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution going to the third supply pipe; and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution going to the third supply pipe.

Abstract: Provided is a substrate cleaning apparatus including: a cleaning bath configured to accommodate a substrate having a first surface and a second surface; a substrate support configured to support the substrate; first and second nozzle bars provided in the cleaning bath to be rotatable in a plane parallel with the substrate, each of the first and the second nozzle bars including a passage; a plurality of nozzles provided along a longitudinal direction of each of the first and the second nozzle bars and configured to spray the cleaning solution from the passage of each of the first and the second nozzle bars to the substrate; and first and second brushes, the first brush provided on a first side of the substrate and configured to clean the first surface and the second brush provided on a second side of the substrate and configured to clean the second surface of the substrate.

Abstract: A substrate cleaning device includes a cleaning brush having a circular upper end surface, and cleans a lower surface of a substrate by bringing the upper end surface of the cleaning brush into contact with the lower surface of the substrate rotated by a spin chuck. A space forming member is provided for cleaning of the cleaning brush. The space forming member has a lower end surface. Further, the space forming member has a circular opening in a lower end surface and forms an inner space. A cleaning liquid is supplied to the inner space of the space forming member with the circular opening closed by the upper end surface of the cleaning brush, whereby the cleaning liquid is allowed to flow out from the inner space through the circular opening and a gap between the upper end surface of the cleaning brush and the lower end surface of the space forming member.

Abstract: The present application provides a workpiece transfer system in which a production efficiency of a production line to be used can be improved. For example, a workpiece transfer system 1 includes: robots 11 & 12 placed in front of process modules 4 & 6 for conducting a predetermined processing operation on a workpiece W, the robots 11 & 12 bringing the workpiece W into the process modules 4 & 6 and taking the workpiece W out of the process modules 4 & 6; a workpiece storage unit 13 for storing the workpiece W to be brought into the process modules 4 & 6 and the workpiece W taken out of the process modules 4 & 6; and a transfer mechanism 14 for transferring the workpiece storage unit 13 in a direction almost perpendicular to a direction of bringing in and taking out the workpiece W for the process modules 4 & 6.

Abstract: The present invention efficiently executes a plurality of functions of a substrate treatment apparatus. A control device 5 includes: a plurality of software applications (interface-related APSW 510 and control-related APSW 520) configured to execute each function of treatments concerning a CMP apparatus; and a shared memory 540 which stores information that is used in the plurality of software applications therein. The plurality of software applications include a task monitoring software application 530 which monitors whether abnormality has occurred in the plurality of software applications or not. The task monitoring software application 530 restarts the software application in which the abnormality has occurred, when the abnormality has occurred in any of the plurality of software applications, and makes the other software applications continue the respective processes.

Abstract: A substrate processing system for sequentially processing substrates includes processing chambers, a transfer unit, and a control unit controlling the processing chambers and the transfer unit. The control unit includes a transfer control unit controlling an operation of the transfer unit, a transfer order setting unit setting a transfer order of substrates to the processing chambers, an accumulation unit for accumulating a film thickness of a formed thin film or the number of processed substrates after completion of previous cleaning or previous pre-coating in the processing chambers, a processing chamber priority determination unit for determining priority of processing the substrates in the processing chambers based on predetermined rules, and an execution instruction unit for executing conditioning in the processing chambers.

Abstract: Disclosed is a substrate support structure, a vacuum drying apparatus and a method for vacuum drying a substrate. The substrate support structure comprises: a support pin having a top end for supporting a substrate; and an auxiliary support assembly including: a drive device; a support rod driven by the drive device; and a support disc disposed at a top end of the support rod and made of flexible material adapted to support the substrate, wherein the drive device is configured to drive the support rod to move in a direction parallel to an axial direction of the support pin so as to make the support disc positioned below or above the top end of the support pin as the support rod moves, so that the substrate is selectively supported by the support disc or the support pin. The substrate support structure, the vacuum drying apparatus and the method for vacuum drying a substrate can prevent the substrate from being easily scratched and avoid poor quality and uneven brightness of the substrate.

Abstract: According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.

Abstract: A wafer cleaning device comprising a wafer stage for holding a wafer having a surface to be washed, a first nozzle positioned above the wafer, a second nozzle positioned above the wafer. A first height is between the first nozzle and the surface and a second height is between the second nozzle and the surface, wherein the first height is shorter than the second height.

Abstract: Provided is a substrate treating apparatus. The substrate treating apparatus includes a first unit, a second unit, a supply line connecting the first unit to the second unit to supply a supercritical fluid from the first unit to the second unit, a flow rate adjustment member disposed in the supply line, and a filter disposed in the supply line to remove foreign substances. The supply line disposed between the flow rate adjustment member and the filter is disposed to get out of a straight line.

Abstract: An apparatus for cleaning a substrate includes a suction unit generating a suction force, a suction head suctioning contamination particles remaining on the substrate that is transferred in a first direction by using the suction force, and a suction tube connected to the suction unit and the suction head so as to transfer the suction force into the suction head and providing the contamination particles suctioned by the suction head into the suction unit. The suction head may include: a plurality of suction regions arranged in a second direction crossing the first direction; and a plurality of shutters for opening and closing the suction regions. The suction regions corresponding to a width of the substrate in the second direction are opened by the shutters so as to suction the contamination particles.

Abstract: Embodiments of solar panel cleaning apparatuses, solar panel cleaning systems, and solar panel cleaning methods are disclosed. In certain embodiments, the disclosed solar panel cleaning apparatuses, systems and methods do may not require any water or other cleaning liquids in the whole cleaning process, which makes them prominent well suited in for water-deficit environments such as deserts. In one embodiment, the solar panel cleaning apparatus comprises one or more rotatable brushes each having a rotational axis and a drive configured to move each of the one or more rotatable brushes in a direction that is not perpendicular to the rotational axis. The solar panel cleaning apparatus is may be configured such that the angle of the rotational axis of at least one of the one or more rotatable brushes is adjustable relative to the direction of travel.

Abstract: Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing.

Abstract: A method for processing a plurality of substrates after forming a photosensitive film on each substrate includes carrying each substrate into a placement buffer including a plurality of supporters by a first transport mechanism; taking out each substrate from the placement buffer to an interface by a second transport mechanism; carrying each substrate into the exposure device; carrying each substrate out of the exposure device into the placement buffer by the second transport mechanism; taking out each substrate from the placement buffer to the processing section by the first transport mechanism; performing development processing on each substrate; making each substrate stand by at the placement buffer based on timing at which the exposure device can accept each substrate; and making each substrate stand by at the placement buffer based on timing at which the developing device can accept each substrate.

Abstract: A cleaning device for cleaning a substrate adhering to a support film, including a protective film forming measure for forming a protective film on an exposed surface of the support film, wherein the exposed surface is a portion of a surface of the support film to which a first surface of the substrate adheres, but the substrate does not adheres to the exposed surface; and a cleaning measure for cleaning the substrate by use of a cleaning liquid, the substrate adhering to the support film covered with the protective film. The cleaning device can effectively clean a wafer supported by a dicing tape.

Abstract: A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.

Abstract: A cleaning apparatus for cleaning a semiconductor wafer includes a rotary brush to be positioned to clean the semiconductor wafer, and an optical sensing device associated with the rotary brush to sense a separation distance between a reference position thereon and the semiconductor wafer. An actuator is coupled to the optical sensing device to position the rotary brush based upon the sensed separation distance.

Abstract: Methods for cleaning a surface of a photomask and for increasing the useable lifetime of the photomask are disclosed. One method includes, a first wafer print processing using a photomask and a pellicle disposed across the photomask, and cleaning the photomask. The cleaning the photomask includes directing a laser beam through the pellicle toward the photomask, the laser beam having a wavelength that is substantially equal to a local maximum of an absorption spectrum of the photomask, heating the photomask with the laser beam, and transferring heat from the photomask to a contaminant disposed on the photomask, thereby thermally decomposing the contaminant.

Abstract: The present invention discloses a method of reducing contamination in a CVD chamber. The method comprises cleaning the CVD chamber with first cleaning gases containing NF3; removing the particles in the CVD chamber with second cleaning gases containing N2; further removing the particles in the CVD chamber with third cleaning gases containing O2; and seasoning an amorphous carbon layer with mixed gases containing C2H2 and an inert gas.

Abstract: Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.

Abstract: An ultrasonic cleaning device includes an ultrasonic transducer (13) for providing ultrasonic energy to a propagation liquid (15), an ultrasonic propagation tube (12) for flowing the propagation liquid provided with the ultrasonic energy by the ultrasonic transducer, a holding mechanism disposed below the ultrasonic propagation tube for holding an object to be cleaned (21), and a cleaning liquid supply mechanism for supplying a cleaning liquid to a cleaning surface of the object to be cleaned held by the holding mechanism. The ultrasonic propagation tube (12) is disposed so that a side surface thereof may contact a liquid film (19) of the cleaning liquid formed on the cleaning surface by supplying the cleaning liquid to the cleaning surface by the cleaning liquid supply mechanism.

Abstract: In a spin-chuck with plural collector levels, a separate exhaust controller is provided for each level. This permits selectively varying gas flow conditions among the collector levels, so that the ambient pressure at one level does not adversely affect device performance in an adjacent level.

Abstract: A method for cleaning a photomask-related substrate, when the photomask-related substrate is contaminated by a sulfate ion. The photomask-related substrate is cleaned with pure water to remove the sulfate ion, and a deaerating step of removing dissolved gas is performed in advance on the pure water used for cleaning. When the substrate to be cleaned is cleaned by filtering the cleaning fluid with a filter for removing foreign matter and supplying the filtered cleaning fluid to the cleaning apparatus through a supply pipe, prior to a supply of the filtered cleaning fluid to the cleaning apparatus, the filtered cleaning fluid is discharged to the outside of a system through a discharge pipe, and then the filtered cleaning fluid is supplied to the cleaning apparatus through the supply pipe.

Abstract: [Problem] To provide a liquid processing method with which, while alleviating a watermark occurring in the surface of a substrate, it is possible to hydrophobize the surface using a hydrophobing gas. [Solution] A substrate (W), retained in substrate retaining parts (21, 22, 23), is rotated and has a liquid compound supplied to the surface thereof, whereby a liquid process is carried out. Next, a rinse liquid is supplied to the surface of the substrate (W) while the substrate (W) is rotated, and the liquid compound is replaced with the rinse liquid. Next, supplying a hydrophobing gas for hydrophobizing the surface of the substrate (W) and supplying the rinse liquid to the surface of the substrate (W) after supplying the hydrophobing gas are repeated alternately, thus hydrophobizing the substrate (W). Next, the rinse liquid is removed by rotating the substrate (W), drying the substrate (W).

Abstract: The liquid processing apparatus includes: a liquid supply mechanism; a supply line connected to the liquid supply mechanism, the supply line having a discharge opening for discharging a temperature-regulated liquid; a processing unit supporting the discharge opening of the supply line; a return line configured to return the liquid supplied to the supply line to the liquid supply mechanism; and a liquid-supply switching valve configured to switch between supply of the liquid, which is used in a processing of an object to be processed in the processing unit, and stoppage of the liquid supply. The liquid-supply switching valve is disposed on the supply line on a route of the liquid returning from the supply line to the liquid supply mechanism through the return line.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: Disclosed is a substrate processing apparatus capable of drying a substrate to be processed while suppressing a pattern collapse or occurrence of contamination. In a processing vessel, a substrate is immersed in a liquid in the longitudinal direction, and the liquid is pushed out by a substitution fluid of a supercritical state to be discharged from the processing vessel. Thereafter, the substitution fluid subjected to the substitution with the liquid is discharged from the processing vessel to depressurize the processing vessel, and the substitution fluid is changed from the supercritical state to a gaseous state to dry the substrate.

Abstract: A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table 204 on which a wafer W is placed, a heating unit 210 for heating a wafer end portion, ultraviolet application unit 220 for applying ultraviolet to the wafer end portion, and a gas flow forming unit 230 for forming a gas flow on the surface of the wafer end portion. The heating unit, the ultraviolet application unit, and the gas flow forming unit are disposed near the wafer end portion so as to surround the wafer.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a cup. The liquid processing apparatus includes: a processing chamber in which a substrate holding unit holding a substrate and a cup placed around the substrate holding unit are installed; a nozzle for supplying a processing liquid to the substrate held by the substrate holding unit; and a cup cleaning unit cleaning the cup by supplying a cleaning liquid to the upper part of the cup. A concave portion is formed in the upper part of the cup and the cup cleaning units supply the cleaning liquid to the concave portion in the upper part of the cup.

Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a brush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Abstract: A substrate cleaning method is used for performing scrub cleaning of a surface of a substrate. The substrate cleaning method includes rotating a roll cleaning member and a substrate respectively in one direction while keeping the roll cleaning member in contact with the substrate in a cleaning area, and supplying a cleaning liquid to a surface of the substrate to scrub-clean the surface of the substrate in the presence of the cleaning liquid in the cleaning area. The cleaning liquid is supplied initially to an inverse-direction cleaning area of the cleaning area where the relative rotational velocity between the roll cleaning member and the substrate is relatively high, and thereafter to a forward-direction cleaning area of the cleaning area where the relative rotational velocity between the roll cleaning member and the substrate is relatively low while the substrate makes one revolution on a central axis thereof.

Abstract: The present invention includes methods and materials for cleaning materials, particles, or chemicals from a substrate with a brush or pad. The method comprising: engaging a surface of a rotating wafer with an outer circumferential surface of a rotating cylindrical foam roller, the cylindrical foam roller having a plurality of circumferentially and outwardly extending spaced apart nodules extending from the outer surface, each nodule defining a height extending from the outer surface of the cylindrical foam roller to a substrate engagement surface of the nodule, the substrate engagement surface of one or more of the nodules having a rounded configuration; and positioning the cylindrical foam roller on the substrate such that the one or more nodules are positioned to have only the rounded substrate engagement surface contact the substrate such that no linear surface of the one or more nodules contacts the substrate.

Abstract: A wafer scrubber is disclosed, including a chamber, and a holder connecting to a spindle disposed in the chamber, wherein the holder supports a wafer, and the wafer spins to remove water on the wafer, and a meshed inner cup comprising a plurality of through holes disposed between the holder and a wall of the chamber, wherein the meshed inner cup receives water from a surface of the wafer and rotates around the spindle to release the water through the through holes.

Abstract: A substrate is moved below a substrate cleaning module in a direction extending from a leading edge to a trailing edge of the substrate cleaning module. A cleaning material is dispensed downward toward a top surface of the substrate along the leading edge of the substrate cleaning module. A rinsing material is dispensed downward toward the top surface of the substrate along the trailing edge of the substrate cleaning module to generate a rinsing meniscus. Vacuum suction is applied at a vacuum suction location along a bottom surface of the substrate cleaning module and parallel to the leading and trailing edges of the substrate cleaning module. The vacuum location is positioned between a dispense location of the cleaning material and a dispense location of the rinsing material. A plenum region located between the dispense location of the cleaning material and the vacuum location is vented.

Abstract: Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.

Abstract: A proximity head defined by a body having a length. The body includes a main bore defined therein and extending along the length. A resistor bore is defined in the body and extends along the length. The resistor bore defined below the main bore. A first plurality of bores defined between the main bore and the resistor bore and a second plurality of bores defined between the resistor bore and an exterior surface of the body. The exterior surface of the body defining a proximity surface of the proximity head.

Abstract: The invention provides an ultrasonic cleaning apparatus in which unevenness of sound pressure among a plurality of oscillating elements is solved by emitting uniform ultrasonic waves, the rate of removal of fine particles is improved, and the uneven cleaning is avoided. The ultrasonic cleaning apparatus includes a cleaning bath that stores an object to be cleaned and cleaning solvent; a plurality of oscillating elements attached to the cleaning bath; a plurality of oscillators connected respectively to the plurality of oscillating elements for exciting the plurality of oscillating elements; and a controller connected to the plurality of oscillators for controlling the plurality of oscillators to output signals having the same phase or substantially the same phase to the plurality of oscillating elements.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: The present invention provides methods and apparatus for a Marangoni vapor knife assembly. The assembly includes a base having a channel extending longitudinally through the base and a plurality of passages extending laterally from the channel toward an outer face of the base; a top plate adapted to be removeably coupled to the base with an outer face flush with the outer face of the base; and a shim adapted to be disposed between the base and the top plate and further adapted to form a plurality of spray orifices in the assembly. Numerous additional features are disclosed.

Abstract: A sonication cleaning tank containing a liquid is monitored. A first opacity count is generated indicative of contaminants and/or bubbles in the liquid. At least some of the liquid is filtered to remove contaminants from the liquid, and a second opacity count indicative of contaminants and/or bubbles in the filtered liquid is generated. Based at least in part on the first and second opacity counts, a contaminant count corresponding to an estimated number of contaminants in the liquid is then determined.

Abstract: A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.

Abstract: A substrate processing method for a substrate having a photosensitive film on a top surface thereof, includes cleaning a back surface of the substrate after the formation of the photosensitive film and before exposure processing; transporting the substrate to a temperature adjuster such as a cooling unit, while holding the substrate with a first holder; adjusting a temperature of the substrate with the temperature adjuster; transporting the substrate from the temperature adjuster to the exposure device with a second holder; and transporting the substrate after the exposure processing to a first platform while holding the substrate with a third holder.