Abstract: Disclosed herein are doped thermoelectric ceramic oxide compositions comprising a calcium cobaltite ceramic. The doped thermoelectric ceramic oxide compositions can have a formula Ca3-xM2xCo4O9M1y, where M1 represents a first metal dopant, M2 represents a second metal dopant, x is a number having a value of from about 0.00 to about 3.00, and y is a number having a value of from about 0.01 to about 0.50. The doped thermoelectric ceramic oxide compositions have an increased energy conversion efficiency as compared to an undoped or conventional thermoelectric ceramic oxide materials. Also disclosed are methods for making the doped thermoelectric ceramic oxide compositions. Products and devices are disclosed comprising the thermoelectric ceramic oxide compositions, e.g., solid-state conversion devices that can utilize heat to generate electricity. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: An apparatus for solid state energy harvesting includes a complex oxide based pyrochlores having a chemical formula of A2 B2 O7 configured to directly convert heat into electricity and operate and function at a higher temperature without oxidizing in air. The complex oxide based pyrochlores are mixed with cation at B-site.

Abstract: A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgyCu2?y)1?xTe1?zSez, wherein ?0.025?x?0.075, 0.6?y?1.4, 0<z?0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi2Te3, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu2X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu2X-based materials in the field of low-temperature thermoelectricity.

Abstract: A porous metal and carbon composite lightning strike protection system is described that utilizes flexible metallic material and porous carbon. The carbon-based lightning strike protection system may be produced in the form of a panel that may be applied over the surface of an object to be protected or may be created directly over the surface of the object. The carbon-based lightning strike protection system is readily adaptable to high temperature applications.

Abstract: A carbon-based lightning strike protection system is described that utilizes flexible graphite and porous carbon. The carbon-based lightning strike protection system may be produced in the form of a panel that may be applied over the surface of an object to be protected or may be created directly over the surface of the object. The carbon-based lightning strike protection system is readily adaptable to high temperature applications.

Abstract: A main object of the present disclosure is to provide a novel active material of which volume change due to charge and discharge is small. The present disclosure achieves the object by providing a method for producing an active material having a composition represented by NaxMySi46 (M is a metal element other than Na, x and y satisfy 0<x, 0?y, y?x, and 0<x+y<8), and a silicon clathrate I type crystal phase, the method comprising: a preparing step of preparing a precursor compound having the silicon clathrate I type crystal phase; and a liquid treatment step of bringing the precursor compound into contact with a polar liquid so as to desorb a Na element from the precursor compound and obtain the active material.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1 which exhibits excellent phase stability even at a low temperature, particularly at a temperature corresponding to an operating temperature of a thermoelectric element, and also exhibits a significantly superior power factor and thermoelectric performance index due to its excellent electrical conductivity and low thermal conductivity caused by its unique crystal lattice structure, a method for preparing the same, and a thermoelectric element including the same. [Chemical Formula 1]—V1-2xSn4Bi2-xAg3xSe7, wherein V is vacancy and 0<x<0.5.

Abstract: Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below: M1aCo4Sb12-xM2x??Chemical Formula 1 where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0?a?1.8, and 0?x?0.6.

Abstract: A thermoelectric cloak including an inner region and an external medium. The inner region has a cloaking effect and is simultaneously invisible from both heat and electric charge fluxes; and heat, electric currents, and gradients in the external medium are unaltered by the cloaking effect of the inner region.

Abstract: Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 ??·cm2.

Abstract: A method for producing a thermoelectric object for a thermoelectric conversion device is provided. A starting material which has elements in the ratio of a half-Heusler alloy is melted and then cooled to form at least one ingot. The ingot is homogenized at a temperature of 1000° C. to 1400° C. for a period of time t, wherein 0.5 h?t<12 h or 24 h<t<100 h. The homogenized ingot is crushed and ground into a powder. The powder is cold-pressed and sintered at a maximum pressure of 1 MPa for 0.5 to 24 h at a temperature of 1000° C. to 1500° C.

Abstract: The present invention relates to a P-type skutterudite thermoelectric material, a method for preparing the same, and a thermoelectric device including the same. More specifically, the present invention relates to a P-type skutterudite thermoelectric material into which a specific filler and charge compensator are introduced, and which exhibits high thermoelectric performance, a method for preparing the same, and a thermoelectric device including the same.

Abstract: The present invention provides a thermoelectric conversion material represented by the following chemical formula (I): Ba8+aCu6?bGe40+6 ??(I) wherein the values of a is not less than 0.1 and not more than 0.47; the values of b is not less than 0 and not more than 0.43; the thermoelectric conversion material has a clathrate crystal structure; and the thermoelectric conversion material is of p-type. The present invention provides a p-type Ba—Cu—Ge clathrate thermoelectric conversion material having high thermoelectric conversion performance index.

Abstract: Disclosed are apparatus and methodology for constructing thermoelectric devices (TEDs). N-type elements are paired with P-type elements in an array of pairs between substrates. The paired elements are electrically connected in series by various techniques including brazing for hot side and/or also cold side connections, and soldering for cold side connections while being thermally connected in parallel. In selected embodiments, electrical and mechanical connections of the elements may be made solely by mechanical pressure.

Abstract: A gas sensor comprises a metal oxide sensing patch, a heater for heating the sensing patch, electrodes for measuring the conductivity of the sensing patch and an evaluation unit for generating a resulting parameter indicative of at least one analyte. Further, a temperature sensor is provided for measuring the temperature at the location of the sensing patch. The evaluation unit is adapted to derive a first parameter indicative of the conductivity of the sensing patch and a second parameter indicative of the heating power required to maintain a desired temperature of the sensing patch or indicative of the deviation of the temperature at the sensing patch from the desired temperature. The evaluation unit further combines the first and second parameters for evaluating the resulting parameter, thereby using the sensing patch not only as a chemiresistor but also as a pellistor-type measurement device.

Abstract: A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo-mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit (ZT) above 1.0 and the compound has a composition following a formula of MT4X12.

Abstract: A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg2Si1-xSnx, wherein 0.6?x?0.7, and a first n-type dopant.

Abstract: A method and apparatus for producing core-shell type metal nanoparticles which are excellent in productivity are provided, in particular, the present invention provides a method of production of core-shell type metal nanoparticles including (a) a step of introducing a solution of a salt of a first metal to a first flow path of a flow type reaction apparatus and applying plasma to the solution of the salt of the first metal in the first flow path to obtain a solution which contains metal nanoparticles of the first metal and (b) a step of introducing a solution of a salt of a second metal to a second flow path of the flow type reaction apparatus, making it merge with the solution which contains metal nanoparticles of the first metal to obtain a mixed solution, and applying plasma to the mixed solution to cover the metal nanoparticles of the first metal by the second metal.

Abstract: Provided herein are a thermoelectric material and a method for preparing the same, wherein the thermoelectric material has excellent thermoelectric performance and high mechanical properties (in particular, fracture toughness), and thus, when the thermoelectric material is applied to a thermoelectric module, the thermoelectric module has excellent performance and efficiency and a long lifespan.

Abstract: A thermoelectric half-Heusler material comprising niobium (Nb), iron (Fe) and antimony (Sb) wherein the material comprises grains having a mean grain size less than one micron. A method of making a nanocomposite half-Heusler thermoelectric material includes melting constituent elements of the thermoelectric material to form an alloy of the thermoelectric material, comminuting (e.g., ball milling) the alloy of the thermoelectric material into nanometer scale mean size particles, and consolidating the nanometer size particles to form the half-Heusler thermoelectric material comprising at least niobium (Nb), iron (Fe) and antimony (Sb) and having grains with a mean grain size less than one micron.

Abstract: Disclosed is an article having: a porous thermally insulating material, an electrically conductive coating on the thermally insulating material, and a thermoelectric coating on the electrically conductive coating. Also disclosed is a method of forming an article by: providing a porous thermally insulating material, coating an electrically conductive coating on the thermally insulating material, and coating a thermoelectric coating on the electrically conductive coating. The articles may be useful in thermoelectric devices.

Abstract: A system for detecting hot car seat situations, manually cooling the child in those situations, and facilitating one or more alert notifications is disclosed. An apparatus receives sensor data that it uses to detect the presence of a child in a car seat in a vehicle. Multiple sensors provide added security against false positives. When a child is detected, the apparatus activates a cooling flow of air towards the child if the temperature rises above a threshold. The apparatus waits until the vehicle is not moving and off before initiating notifications to one or more subscribing devices. Once off, and once the temperature of the child further rises or has the air flow on for a period of time, the apparatus sends a notification to the subscribing devices. If the child is not removed within a set period of time, then emergency responders are notified.

Abstract: A flexible laminated thermocouple is provided and includes layers of insulation material. At least one of the layers has a longitudinal axis and includes thermocouple conductors formed of differing electrically conductive materials. Each of the thermocouple conductors includes a main section extending along the longitudinal axis and a flange extending transversely to the longitudinal axis. The main sections are insulated from one another and the thermocouple conductors are insulated from thermocouple conductors of another layer.

Abstract: A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

Abstract: A thermoelectric conversion material expressed by a chemical formula X3T3-yT?ySb4 (0.025?y?0.5), wherein the X includes one or more elements selected from Zr and Hf, the T includes one or more elements selected from Ni, Pd, and Pt, while including at least Ni, and the T? includes one or more elements selected from Co, Rh, and Ir.

Abstract: A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Abstract: A thermoelectric conversion module includes a pair of substrates, electrodes formed on the facing surfaces of a pair of the electrodes, a thermoelectric element disposed between the electrodes, and a joining layer that joins the electrodes and the thermoelectric element, in which the thickness of the joining layer is 30 ?m or more, and is formed by sintering paste including metal particles smaller than 100 nm.

Abstract: The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.

Abstract: The invention relates to a firing furnace for a tooth replacement or tooth prosthesis, with a firing chamber, at least one heating element for heating the firing chamber, a control unit for controlling the operation of the firing furnace, and a housing at least partially surrounding the firing chamber, wherein the firing furnace comprises at least one thermoelectric element for utilizing the waste heat generated by the firing furnace.

Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: A thermoelectric material and a thermoelectric converter using this material. The thermoelectric material has a first component including a semiconductor material and a second component including a rare earth material included in the first component to thereby increase a figure of merit of a composite of the semiconductor material and the rare earth material relative to a figure of merit of the semiconductor material. The thermoelectric converter has a p-type thermoelectric material and a n-type thermoelectric material. At least one of the p-type thermoelectric material and the n-type thermoelectric material includes a rare earth material in at least one of the p-type thermoelectric material or the n-type thermoelectric material.

Abstract: An industrial thermoelectric generation assembly and method are provided. A plurality of thermoelectric generation elements is provided. Each element has a first side, a second side opposite the first side, and a lateral surface. A thermally insulative material surrounds the lateral surface of each thermoelectric element. The first side of each thermoelectric element is disposed to contact a process heat source, and the second side is configured to be exposed to an ambient environment. At least two of the plurality of thermoelectric generation elements are wired in series. The thermoelectric generation elements, being good thermal insulators, provide good thermal insulation to the process. Withholding heat within the process (which is desired), is converted to electricity.

Abstract: Cartridge-based thermoelectric assemblies and systems are provided which include at least one shunt configured to extend around a conduit, a plurality of thermoelectric elements in thermal communication and in electrical communication with the at least one shunt with at least a portion of the at least one shunt sandwiched between the at least one first thermoelectric element and the at least one second thermoelectric element. The thermoelectric elements are electrically isolated from the conduit. The thermoelectric assemblies and systems further include at least one heat exchanger in thermal communication with the at least one shunt and configured to be in thermal communication with a second fluid.

Abstract: A thermoelectric material has a Heusler alloy type crystal structure and is based on an Fe2VAl basic structure having a total number of valence electrons of 24 per chemical formula. The thermoelectric material has a structure expressed by General Formula Fe2V1?ZAl1+Z, where 0.03?z?0.12, or General Formula Fe2V1?ZAl1+Z, where ?0.12?z??0.03, by controlling its chemical compositional ratio. The former acts as a p-type material and has a Seebeck coefficient whose absolute value reaches a peak at a temperature of 400 K or higher; and the latter acts as an n-type material and has a Seebeck coefficient whose absolute value reaches a peak at a temperature of 310 K or higher.

Abstract: Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk.

Abstract: Provided are a thermoelectric device and a method of manufacturing the same. The method may include forming nanowires on a substrate, forming a barrier layer on the nanowires, forming a bulk layer on the barrier layer, forming a lower electrode under the substrate, and forming an upper electrode on the bulk layer.

Abstract: Disclosed is a thermoelectric conversion material that exhibits a high thermoelectric conversion properties. The thermoelectric conversion material comprises zinc oxide and is represented by formula (I): Zn(1-x-y)AlxYyO??(I) wherein Zn represents zinc; Al represents aluminum; Y represents yttrium; and x>0, y>0, and x+y<0.1, and has a structure in which at least a part of aluminum and yttrium are present in crystal lattices of and/or interstitial site of crystal lattices of zinc oxide.

Abstract: A thermoelectric conversion module includes a pair of substrates, electrodes formed on the facing surfaces of a pair of the electrodes, a thermoelectric element disposed between the electrodes, and a joining layer that joins the electrodes and the thermoelectric element, in which the thickness of the joining layer is 30 ?m or more, and is formed by sintering paste including metal particles smaller than 100 nm.

Abstract: A thermoelectric material having a high ZT value is provided. In general, the thermoelectric material is a thin film thermoelectric material that includes a heterostructure formed of IV-VI semiconductor materials, where the heterostructure includes at least one potential barrier layer. In one embodiment, the heterostructure is formed of IV-VI semiconductor materials and includes a first matrix material layer, a potential barrier material layer adjacent to the first matrix material layer and formed of a wide bandgap material, and a second matrix material layer that is adjacent the potential barrier material layer opposite the first matrix material layer. A thickness of the potential barrier layer is approximately equal to a mean free path distance for charge carriers at a desired temperature.

Abstract: A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.

Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: The invention describes a novel thermoelectric composite material containing electrically conductive polymeric fibrils in a polymer matrix with a high thermoelectric coefficient. The invention also includes a thermoelectric device using the composite. The invention also includes a thermoelectric device containing a thermoelectric layers and a thermoelectric device in which a thermal barrier isolates a thermoelectric layer from a structurally supporting substrate. The thermoelectric devices can be used to generate electricity or to control temperature.

Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: Systems and methods are operable to generate electric power from heat. Embodiments employ one or more direct thermal electric converters that have at least a first recombination material having a first recombination rate, a second recombination material adjacent to the first recombination material and having a second recombination rate, wherein the second recombination rate is different from the first recombination rate, and a third recombination material adjacent to the second recombination material and having a third recombination rate substantially the same as the first recombination rate. Application of heat generates at least first charge carriers that migrate between the first recombination material and the second recombination material, and generates at least second charge carriers that migrate between the third recombination material and the second recombination material. The migration of the first charge carriers and the migration of the second charge carriers generates an electrical current.

Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.

Abstract: The present invention provides a thermoelectric conversion material of which the structure is controlled to have nano-order microscopic pores and which has a low thermal conductivity and has an improved thermoelectric performance index. In the thermoelectric conversion material having a thermoelectric semiconductor layer formed on a block copolymer substrate that comprises a block copolymer having microscopic pores, wherein the block copolymer comprises a polymer unit (A) formed of a monomer capable of forming a homopolymer having a glass transition temperature of 50° C. or higher, and a polymer unit (B) formed of a conjugated dienic polymer.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: Disclosed is an internal current collection structure of a tubular thermal to electric converting cell including an internal electrode, a solid electrolyte and an external electrode. The internal current collection structure includes: a first current collector which closely contacts with the internal electrode of the tubular thermal to electric converting cell; a second current collector which fixes the first porous current collector to the inside of the tubular thermal to electric converting cell and causes the first current collector to be in close contact with the internal electrode; and a lead wire which is a conductive medium and is located between the first current collector and the second current collector.

Abstract: A composite thermoelectric material comprising a matrix comprising a thermoelectric semiconductor; and a nanoscale heterophase dispersed in the matrix, wherein the thermoelectric semiconductor comprises an element belonging to Group 15 of the Periodic Table of the Elements, and the heterophase comprises a transition metal element.

Abstract: A thermoelectric composite includes a plurality of particles comprising a crosslinked polymer having a heat deflection temperature greater than or equal to 200° F. and a segregated network comprising a first filler material which is disposed between the particles to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the thermoelectric composite. The first filler material includes a carbon material, a metal, a metal disposed on a carbon material, or a combination thereof. A process for preparing a thermoelectric article includes combining a first filler material and a plurality of particles comprising a polymer to form a composition and molding the composition to form a thermoelectric article, wherein the thermoelectric article is configured to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the article.