Abstract: According to various embodiments, an electronic device comprises: a polymer including a plurality of quantum dots; at least one first solar cell disposed on a lower portion of the polymer; and at least one second solar cell disposed on a side portion of the polymer; and a battery configured to be charged with electrical energy from at least one of the first solar battery or the second solar battery, wherein: the first solar battery, in a first wavelength band, has a conversion efficiency greater than or equal to a threshold value; the second solar battery, in a second wavelength band different from the first wavelength band, has a conversion efficiency greater than or equal to the threshold value; and the wavelength of light that passes through the polymer may be within the first wavelength band, and the wavelength of light that is absorbed by at least some of the plurality of quantum dots and then remitted may be within the second wavelength bandwidth. Other various embodiments are possible.

Abstract: The present disclosure pertains to an image sensor, including: a first photosensitive layer (2) for sensing blue light; a second photosensitive layer (3) for sensing green light; a third photosensitive layer (4) for sensing red light; and a fourth photosensitive layer (5) for sensing infrared light, wherein the first, second, third and fourth photosensitive layer are stacked on each other and each comprise a Perovskite material.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: A glazing unit is provided for producing an aesthetically pleasing effect, comprising or consisting of at least one pane, said pane having a first structured surface to which a three-dimensional photonic structure is applied and the average refractive index of the photonic structure being higher than approximately 1.6 or higher than approximately 1.8 or higher than approximately 1.95. A method of producing such a glazing unit and the use thereof is also provided.

Abstract: PV layer sequences and corresponding production methods which can reliably provide a PV function with a long service life despite very low production costs. This is achieved by a reactive conditioning process of inorganic particles as part of a room-temperature printing method; the reactive surface conditioning process adjusts the PV activity in a precise manner, provides a kinetically controlled reaction product, and can ensure the desired PV activity even when using technically pure starting materials with 97% purity. In concrete embodiments, particles are printed in composite so as to form sub-sections on a support. Each sub-section has a reductively treated section and an oxidatively treated section, and the sections have PV activity with opposite signs. The sections can be cascaded in rows via upper-face contacts, and a precise light-dependent potential sum can be tapped via a PV measuring group.

Abstract: Methods for plasma depositing polymers comprising cyclic siloxanes and related articles and compositions are generally provided. In some embodiments, the methods comprise flowing a precursor gas in proximity to a substrate within a PECVD reactor, wherein the precursor gas comprises an initiator and at least one monomer comprising a cyclic siloxane and at least two vinyl groups, and depositing a polymer formed from the at least one monomer on the substrate.

Abstract: A solar cell structure including a solar cell having a front surface and a back surface, a reflective layer disposed proximate the back surface and a flexible support layer disposed between the back surface and the reflective layer.

Abstract: A metal-insulator-metal (MIM) high-sensitivity plasmon polariton (SPP) terahertz wave detector includes a rectangular cavity, an absorption cavity, a silver block, two waveguides, three metal films, a terahertz probe light, a signal light, and an opto-electric detector; the terahertz probe light is located at an upper end of the rectangular cavity; the rectangular cavity is located at an input end of the terahertz probe wave; and the absorption cavity is connected with a first waveguide; the silver block is disposed within the first waveguide, and is movable; and the first waveguide is connected with a second waveguide.

Abstract: An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.

Abstract: A mirror for a solar reflector has at least one sensor integrated in the body of the mirror itself, the body of the mirror being all the layers of the mirror. At least one processor is integrated in the body of the mirror, associated with the sensor, thus generating an intelligent device and an intelligent mirror or smart mirror. A method of assembling the mirror itself and a management system for mirrors that make up a solar field is provided.

Abstract: The present disclosure provides a spectrally selective panel that comprises a first panel portion that is at least partially transmissive for light having a wavelength in the visible wavelength range. The panel also comprises a first reflective component that is arranged to reflect incident light within an infrared (IR) wavelength band and within an ultraviolet (UV) wavelength band while being at least partially transmissive for light having a wavelength within the visible wavelength band.

Abstract: A composition includes a metal particle and a resin and has a wavelength band A having a wavelength band width of 1 ?m or more in a wavelength range of 1 to 14 ?m and a wavelength band B having a lower absorbance than the wavelength band A and having a wavelength band width of 1 ?m or more, and a ratio Amin/Bmax between a minimum value Amin of an absorbance of the wavelength band A and a maximum value Bmax of an absorbance of the wavelength band B is 3 or more.

Abstract: One embodiment can provide a solar roof tile. The solar roof tile can include a front cover, a back cover, one or more photovoltaic structures positioned between the front cover and the back cover, and a band-stop optical filter positioned between the front cover and the photovoltaic structures. The band-stop optical filter is configured to block light within a predetermined spectral range, thereby preventing the light from reflecting off surfaces of the photovoltaic structures to exit the solar roof tile.

Abstract: A display panel and a method for manufacturing the same and a display device are disclosed. The display substrate includes: a base substrate having a plurality of pixel areas, at least one of the plurality of pixel areas including a first electrode layer, an organic functional layer and a second electrode layer stacked in sequence on the base substrate; and a third electrode layer on a side of the second electrode layer facing away from the base substrate; wherein the third electrode layer is electrically connected to the second electrode layer.

Abstract: A laminate, comprising an intermediate layer and a covering material A and a covering material B that are disposed on respective sides of the intermediate layer, the covering material A being disposed with an orientation direction at an angle of 20° or less with respect to an orientation direction of the covering material B.

Abstract: A photoelectric conversion element is provided. The photoelectric conversion element comprises a substrate, a first electrode, an electron transport layer, a hole transport layer, and a second electrode. The electron transport layer comprises a photosensitizing compound. The hole transport layer comprises a basic compound A and an ionic compound B. The basic compound A is represented by the following formula (1): where each of R1 and R2 independently represents an alkyl group or an aromatic hydrocarbon group, or R1 and R2 share bond connectivity to form a nitrogen-containing heterocyclic ring; and the ionic compound B is represented by the following formula (2): where X+ represents a counter cation.

Abstract: A display panel and a method for manufacturing the same and a display device are disclosed. The display substrate includes: a base substrate having a plurality of pixel areas, at least one of the plurality of pixel areas including a first electrode layer, an organic functional layer and a second electrode layer stacked in sequence on the base substrate; and a third electrode layer on a side of the second electrode layer facing away from the base substrate; wherein the third electrode layer is electrically connected to the second electrode layer.

Abstract: The present technology relates to a solid-state imaging device, a method of manufacturing the same, and an electronic device capable of improving sensitivity in a certain wavelength band and at the same time reducing color mixture of light of other wavelength bands in a photoelectric conversion unit.

Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.

Abstract: An antireflection film includes an uneven structure layer that has an uneven structure and has an alumina hydrate as a main component, and an intermediate layer that is disposed between the uneven structure layer and a substrate. The uneven structure layer has a spatial frequency peak value of the uneven structure of 8.5 ?m?1 or greater and has a film thickness of 200-250 nm, and the intermediate layer comprises a plurality of layers including at least a first layer, a second layer, a third layer, and a fourth layer.

Abstract: An antireflection film includes an uneven structure layer that has an uneven structure in which a distance between protrusions is shorter than a wavelength of light of which reflection is to be suppressed and has an alumina hydrate as a main component, and an intermediate layer that is disposed between the uneven structure layer and a substrate. The uneven structure layer has a spatial frequency peak value of the uneven structure of 6.5 ?m?1 or greater and a film thickness of 250 nm or more, and the intermediate layer is constituted of a plurality of layers including at least a first layer, a second layer, a third layer, a fourth layer, a fifth layer, a sixth layer, a seventh layer, and an eighth layer in this order from the uneven structure layer side to the substrate side.

Abstract: A laminated automotive glazing including a PDLC film powered electrically by an AC current or a frequency lower than 100 Hz. The voltage varies non-sinusoidally, and a maximum of an effective voltage does not exceed 80 Vrms.

Abstract: A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.

Abstract: Low-level light therapy system with an electrically passive, article of apparel that absorbs an incident spectrum including one or more of a UV wavelength, a visible wavelength, and a near infrared wavelength and emits light having an emission spectrum including visible light radiation and near infrared radiation. Light is emitted from the yarns and a textile material consisting of a network of yarns (as well as the article of apparel made from such a textile material) having an emission spectrum including visible light radiation and near infrared radiation in a direction toward a body of a person. An article of apparel that emits light in the visible/near infrared spectrum, a method of manufacture, and a low-level light therapy method are also disclosed.

Abstract: A transmissive optical device comprising: a layer (10) of light absorber material in the solid state, preferably made of a phase-change material with switchable refractive index such as GeSbTe; a partially-reflective layer (12), and a spacer layer (14) between the layer (10) of light absorber material and the partially-reflective layer (12). The spacer layer (14) and an optional coverlayer (16) may be transparent conductive ITO layers which may serve to electrically switch the phase of the phase-change material layer (10), thereby switching the transmission/reflection properties of the transmissive optical device.

Abstract: The invention relates to an ophthalmic lens comprising: a substrate having a given refractive index; and a coating that minimizes ultraviolet reflections, said coating having a given refractive index and being deposited on a rear face of the substrate. According to the invention, the thickness of the ultraviolet-reflection-minimizing coating is between I ?m and approximately 200 ?m and the refractive index of the ultraviolet-reflection-minimizing coating is at least 0.15 units less than the refractive index of the substrate. The invention also relates to a method for the production of such a lens.

Abstract: The present disclosure relates to optical stacks having nanostructure-based transparent conductive films and low diffuse reflection. Also described are display devices that incorporate the optical stacks.

Abstract: A filter for electromagnetic radiation including one or more dielectric spacer regions and one or more reflective regions integrated on a semiconductor substrate, the semiconductor substrate including a semiconductor photodetector, such that the filter transmits ultraviolet radiation to the semiconductor photodetector, the ultraviolet radiation having a range of wavelengths, and the filter suppresses transmission of electromagnetic radiation, having wavelengths outside the range of wavelengths, to the semiconductor photodetector.

Abstract: A visibly transparent luminescent solar concentrator (LSC) is disclosed. The LSC includes a transparent substrate having at least one edge surface. A dye layer is coupled to the substrate, the dye layer having a peak absorption wavelength outside the visible band, the dye layer being configured to re-emit light at a peak emission wavelength outside the visible band, at least a portion of the re-emitted light being waveguided to the edge surface of the substrate. A photovoltaic device is coupled to the edge surface of the transparent substrate, the photovoltaic device being configured to absorb light at the peak emission wavelength and generate electrical energy.

Abstract: A plasmonic scattering nanomaterial comprising a substrate layer, a metal oxide layer in continuous contact with the substrate layer and silver nanoparticles with a diameter of 25-300 nm deposited on the metal oxide layer is disclosed. The silver nanoparticles have a broad size distribution and interparticle distances such that the silver nanoparticles plasmonically scatter light throughout the metal oxide layer with a near electric field strength of 1-30 V/m when excited by a light source having a wavelength in the range of 300-500 nm and/or 1000-1200 nm. In addition, a method for producing the nanomaterial by sputter deposition is disclosed as well as an appropriate thin film plasmonic solar cell comprising the nanomaterial with a solar efficiency of at least 10%.

Abstract: A device may include a multispectral filter array disposed on the substrate. The multi spectral filter array may include a first metal mirror disposed on the substrate. The multi spectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.

Abstract: A device for adaptable wavelength conversion and a device for energy conversion are described. The device for adaptable wavelength conversion comprises at least one layer comprising a wavelength converting material and arranged to receive and re-emit a light beam. the device is further arranged to manipulate the at least one layer to operate in a closed state, in which a surface of the at least one layer is substantially covered with the wavelength converting material and to operate in an open state, in which the surface of the at least one layer is substantially uncovered with the wavelength converting material. The device for adaptable wavelength conversion can be applied in combination with a solar cell or photovoltaic cell thereby enabling the solar cell to receive radiation having a suitable spectrum under varying lighting conditions.

Abstract: Disclosed are an ink composition for manufacturing a light absorption layer of solar cells and a method of manufacturing a thin film using the same. Particularly, an ink composition for manufacturing a light absorption layer of solar cells including core-shell structure nanoparticles including a core including a copper (Cu)-containing chalcogenide and a shell including a zinc (Zn)-containing chalcogenide; and tin (Sn)-containing bimetallic or intermetallic metal nanoparticles, or a tin (Sn)-containing chalcogenide nanoparticles, dispersed in a solvent, and a method of manufacturing a thin film using the same are disclosed.

Abstract: The present invention relates to compounds of general formula I wherein R100 and R200 are each independently hydrogen, C1-C10-alkyl which in case of C2-alkyl may be interrupted by one and in case of C3-C10-alkyl by one or two nonadjacent oxygen atoms, C5-C7-cycloalkyl, aryl, aryl-C1-C10-alkyl or aryloxy-C1-C10-alkyl, D is an m-valent (m=1, 2 or 3) donor moiety which comprises at least one carbon-carbon or carbon-heteroatom double bond and/or at least one unfused or fused carbo- or heterocyclic ring, A is an acceptor moiety which comprises at least one carbon-carbon or carbon-heteroatom double bond and/or at least one unfused or fused carbo- or heterocyclic ring, and the donor moiety D and the acceptor moiety A are ?-conjugated to one another. Furthermore, the present invention relates to the use of compounds of formula I for producing dye-sensitized solar cells and to dye-sensitized solar cells comprising compounds of formula I.

Abstract: A scintillation detector, including a scintillator that emits scintillation; a semiconductor photodetector having a surface area for receiving the scintillation, wherein the surface area has a passivation layer configured to provide a peak quantum efficiency greater than 40% for a first component of the scintillation, and the semiconductor photodetector has built in gain through avalanche multiplication; a coating on the surface area, wherein the coating acts as a bandpass filter that transmits light within a range of wavelengths corresponding to the first component of the scintillation and suppresses transmission of light with wavelengths outside said range of wavelengths; and wherein the surface area, the passivation layer, and the coating are controlled to increase the temporal resolution of the semiconductor photodetector.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The active layer may include a titanate. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: A 3D grating box, a color filter substrate and a display device are disclosed. The 3D grating box comprises: a photoelectric conversion device for converting optical energy into electric energy; a transparent electrode electronically connected to a first side of the photoelectric conversion device; a grating electrode electronically connected to a second side of the photoelectric conversion device opposite to the first side, the grating electrode comprises a plurality of opaque strip conductors that are arranged side by side at intervals; a storage battery having a first end electronically connected to the transparent electrode and a second end electronically connected to the grating electrode; and a substrate, the grating electrode being arranged on one side of the substrate. The 3D grating box combines the 3D display with the solar cell effectively, simplifying the manufacturing process.

Abstract: A compound is represented by the following general formula (IA0) or (IB0). A solar cell module for which the compound is used is used for a solar power generation device.

Abstract: When a plate-like sample 20 extracted from a polycrystalline rod is evaluated, peaks can appear in a ?-scanning chart. The smaller the number of such peaks, and the narrower the half-value width of the peak, the more suitable the polycrystalline silicon rod is as a raw material for producing single-crystal silicon. It is preferable that the number of peaks in the ?-scanning chart is, for both the Miller index planes <111> and <220>, equal to or smaller than 24/cm2 when converted into unit per area of the plate-like sample. It is also preferable that the value obtained by multiplying the peak half-value width by ?L=21/2?R0/360, where R0 is the radius of the sample, is defined as an inhomogeneous crystal grain size, and that a polycrystalline silicon rod of which all the inhomogeneous crystal grain sizes are smaller than 0.5 mm is selected as a raw material for producing single-crystal silicon.

Abstract: Lens coatings and coated lenses which offer full-spectrum protection by reducing back-side reflection of all light spanning from the UVB to IR-A region are provided. The full-spectrum back-side anti-reflective coatings disclosed herein are comprised of multiple thin-film layers of high refractive index (HighIndex) and low refractive index (LowIndex) materials. In many embodiments, the penultimate layer distal from the substrate lens is a HighIndex layer, and the final layer distal from the substrate lens is a LowIndex layer.

Abstract: When the degree of crystalline orientation of polycrystalline silicon is evaluated by an X-ray diffraction method, each obtained disc-like sample 20 is disposed in a position where Bragg reflection from a Miller index face <hkl> is detected and in-plane rotated at a rotational angle ? with the center of the disc-like sample 20 as the center of rotation, so that an X-ray-radiated region defined by a slit ?-scans over the principal surface of the disc-like sample 20, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face <hkl> on the rotational angle (?) of the disc-like sample 20, a baseline is determined from the chart, and the diffraction intensity value of the baseline is used as an estimative index of the degree of crystalline orientation.

Abstract: A thin film photoelectric converter including a transparent conductive layer, a laser light absorption layer, a back electrode layer, a semiconductor photoelectric conversion layer and a transparent electrode layer stacked on a translucent substrate. The laser light absorption layer is parted into regions by first kind parting line grooves, and the photoelectric conversion layer is parted into regions by third kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer and the photoelectric conversion layer. The transparent electrode layer is parted into regions by fourth kind parting line grooves penetrating the laser light absorption layer, the rear surface electrode layer, the photoelectric conversion layer and the transparent electrode layer. A receiving side transparent electrode region of one cell is electrically connected to a back electrode region of an adjacent cell through the first kind groove, the transparent conductive layer and the third kind groove.

Abstract: The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method.

Abstract: A wearable device is disclosed that, while being worn by a user, may allow a user to authenticate to a second device such as a smartphone without having to enter an unlock code such as a personal identification number. The wearable device may detect when the user removes it. Removal of the wearable device may cause it to be disabled and prevent it from being used to authenticate a subsequent user to the second device until it is re-enabled.

Abstract: The present invention relates to a luminescent photovoltaic generator (1) and a waveguide for use in such a photovoltaic generator. The photovoltaic generator comprises a photovoltaic cell (4) and a waveguide comprising a transparent matrix (2) having particles of an inorganic luminescent material dispersed therein and/or an inorganic luminescent material disposed at at least one side thereof (6). The waveguide is associated with the photovoltaic cell (4), such that, in use, at least some of the light emitted from the luminescent material passes into the photovoltaic cell (4) to generate a voltage in the cell. In preferred embodiments, the inorganic luminescent material is a line emitter and the emission is due to a forbidden electronic transition within the material. The inorganic luminescent material may be selected from an inorganic phosphor, an inorganic fluorescent material and quantum dots, quantum rods and quantum core/shell systems.

Abstract: Photovoltaic cells containing a novel electrode, as well as related systems, methods, modules, and components, are disclosed.

Abstract: The present invention provides a perylenebisimide-polyester copolymer and a transesterification process for the preparation thereof. The perylenebisimide-polyester copolymer prepared is useful in organic light emitting diodes, solar cells and such other photovoltaic applications.

Abstract: The invention relates to a solar cell structure (10) having at least one transparent photovoltaic cell (42), in particular having a dye solar cell or a thin-film semiconductor cell. It comprises at least one polymer layer (36) which is provided with a fluorescent material, or a mixture of a plurality of fluorescent materials, and covers the at least one transparent photovoltaic cell (42).

Abstract: The invention is directed to a polymer sheet and its use as part of a solar paneland glass element. The sheet comprises multiple coextruded polymer layers, wherein at least two or more layers of the polymer sheet comprise a luminescence downshifting compound for at least partially absorbing radiation having a certain wavelength and re-emitting radiation at a longer wavelength than the wavelength of the absorbed radiation, and wherein a luminescence downshifting compound in a first polymer layer can absorb more radiation at a lower wavelength than the luminescence downshifting compound present in a next layer.

Abstract: Provided is an organic light emitting device. The organic light emitting device comprising a first light emitting part on a substrate, emitting a first light of a first wavelength, wherein the first light emitting part includes a transparent first electrode, a first organic light emitting layer, and a transparent second electrode sequentially stacked on the substrate, a second light emitting part on the first light emitting part, emitting a second light of a second wavelength, wherein the second light emitting part includes a transparent third electrode, a second organic light emitting layer, and a reflective fourth electrode sequentially stacked on the first light emitting part, and a fluorescent material disposed at least one between the substrate and the first light emitting part, and between the first light emitting part and second light emitting part.