Manganese Base Patents (Class 148/424)
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Patent number: 9725814Abstract: High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC.Type: GrantFiled: July 18, 2012Date of Patent: August 8, 2017Assignee: JX Nippon Mining & Metals CorporationInventors: Kazuto Yagi, Yuichiro Shindo, Eiji Hino
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Publication number: 20100313712Abstract: The invention concerns an aluminum-based master alloy for manganese alloying of metal alloys and a method for producing thereof, and use thereof for production of the metal alloys. The master alloy is aluminum and manganese (Al—Mn) alloy in form of splatters, which contains the following components in mass %: Mn 77-93, other components in total 0-5, Al— the rest. The method for producing the master alloy is characterized in that the temperature for adding the manganese to the liquid metal is in the range from 660 to 1600° C., and the cooling rate of the alloy during casting is in the range of 50-1500° C./sec for obtaining splatters of the master alloy. Thickness of splatters is in the range of 1-10 mm. The master alloys AlMn80 and AlMn90 are designed to be used for manganese alloying of metal alloys, whereas the temperature for adding the master alloy in the liquid metal is in the range from 600 to 850° C.Type: ApplicationFiled: June 10, 2010Publication date: December 16, 2010Inventor: Mihhail Terehhov
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Patent number: 7229510Abstract: A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.Type: GrantFiled: February 18, 2002Date of Patent: June 12, 2007Assignee: Nippon Mining & Metals, Co., Ltd.Inventor: Yuichiro Nakamura
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Patent number: 6929726Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 ?m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.Type: GrantFiled: January 8, 2004Date of Patent: August 16, 2005Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Watanabe, Takashi Ishigami
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Publication number: 20040103750Abstract: A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.Type: ApplicationFiled: October 7, 2003Publication date: June 3, 2004Inventor: Yuichiro Nakamura
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Patent number: 6736947Abstract: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.Type: GrantFiled: June 23, 2000Date of Patent: May 18, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Koichi Watanabe, Takashi Ishigami
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Patent number: 6719857Abstract: The present invention provides a die casting magnesium alloy having excellent heat resistance and castability, and the alloy of the present invention is a die casting magnesium alloy having excellent heat resistance and castability, comprising 2 to 6% by weight of Al, 0.3 to 2% by weight of Ca, 0.01 to 1% by weight of Sr, 0.1 to 1% by weight of Mn, the balance magnesium and unavoidable impurities. According to the present invention, more excellent effects can be obtained in the composition wherein rare earth elements are added to the composition described above.Type: GrantFiled: February 23, 2001Date of Patent: April 13, 2004Assignee: Mitsubishi Aluminum Co., Ltd.Inventors: Koichi Ohori, Yusuke Nakaura, Takeshi Sakagami
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Patent number: 6692838Abstract: The invention includes a composition of matter which is resistant to metal dusting and a method for preventing metal dusting on metal surfaces exposed to carbon supersaturated environments.Type: GrantFiled: March 15, 2002Date of Patent: February 17, 2004Assignee: ExxonMobil Research and Engineering CompanyInventors: Trikur Anantharaman Ramanarayanan, ChangMin Chun
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Patent number: 6591616Abstract: A combine bulk storage/single stage metal hydride compressor, a hydrogen storage alloy therefore and a hydrogen transportation/distribution infrastructure which incorporates the combine bulk storage/single stage metal hydride compressor.Type: GrantFiled: July 10, 2001Date of Patent: July 15, 2003Assignee: Energy Conversion Devices, Inc.Inventors: Stanford R. Ovshinsky, Rosa T. Young, Baoquan Huang, Farshad Bavarian, Gene Nemanich
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Patent number: 6458182Abstract: A process for producing a high-purity Mn material comprising the steps of premelting crude Mn at 1250-1500° C. and vacuum distilling the melt at 1100-1500° C. The degree of vacuum during the vacuum distillation ranges from 5×10−6 torr to 10 torrs. A crucible for use in the vacuum distillation is a double crucible, which consists of inner and outer crucibles, and a carbon felt packed in the space therebetween. A high-purity Mn material for thin film deposition which contains a total of not more than 100 ppm impurity metallic elements, not more than 200 ppm oxygen, not more than 50 ppm nitrogen, not more than 50 ppm S, and not more than 100 ppm C.Type: GrantFiled: December 21, 2000Date of Patent: October 1, 2002Assignee: Japan Energy CorporationInventors: Yuichiro Shindo, Tsuneo Suzuki
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Patent number: 6270593Abstract: Mn alloy materials for magnetic materials contain 500 ppm or less, preferably 100 ppm or less, oxygen, 100 ppm or less, probably 20 ppm or less, sulfur, and preferably a total of 1000 ppm or less, more preferably 500 ppm or less, impurities (elements other than Mn and the alloying component). The alloying component that forms an alloy with Mn is one or two or more elements selected from the group consisting of Fe, Ir, Pt, pd, Rh, Ru, Ni, Cr and Co. Sputtering targets formed from the Mn alloy materials for use in depositing magnetic thin film, and the thin films so produced.Type: GrantFiled: July 28, 1998Date of Patent: August 7, 2001Assignee: Japan Energy CorporationInventors: Yuichiro Shindo, Tsuneo Suzuki
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Patent number: 5968450Abstract: The present invention provides a scandium containing hydrogen absorption alloy having an alloy phase which is represented by the following formula;(Sc.sub.x A.sub.1-x)(B'.sub.y B".sub.2-y).sub.zwherein A is at least one of Ti, Zr, rare-earth elements, a mixture of Ti and at least one of Zr, Ta, Nb, Hf, Ca and rare-earth elements, and a mixture of Zr and at least one of Ti, Ta, Nb, Hf, Ca and rare-earth elements; B'is at least one of Ni, Fe, Co and a mixture of at least one of Ni, Fe and Co and at least one of Al, Ga, Si and In; B" is at least one of Mn, V, Cr, Nb, Ti and a mixture of at least one of Mn, V, Cr, Nb and Ti and at least one of Al, Ga, Si and In; x represents 0<x.ltoreq.1; y represents 0<y<2; and z represents 0.75.ltoreq.z.ltoreq.1.2, and the alloy phase includes at least one of a part which belongs to a C15 type Laves phase and a part which belongs to a C14 type Laves phase, and a hydrogen absorption electrode which includes the alloy.Type: GrantFiled: September 14, 1994Date of Patent: October 19, 1999Assignee: Hitachi Chemical Company, Ltd.Inventors: Masato Yoshida, Takitaro Yamaguchi, Takao Ogura
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Patent number: 5888317Abstract: The present invention relates to a material for hydrogen-storage constituted by Ti-Mn alloy system which has a high hydrogen-storage capacity, plateau hydrogen dissociation equilibrium pressure, hypostoichiometric composition and crystal structure of C14. Ti-Mn alloy system for hydrogen-storage of the invention which has a C14 crystal structure, is represented as: Ti.sub.u Zr.sub.v Mn.sub.w Cr.sub.x V.sub.y X.sub.z, wherein, X is at least one of element selected from the group consisting of Fe, Al and Ni; u, v, w, x, y and z are mole numbers of each components; 0.7<u<1.0; 0<v<0.3; 1.0.ltoreq.w.ltoreq.1.3; 0.1.ltoreq.x.ltoreq.0.4; 0<y<0.3; 0.ltoreq.z.ltoreq.0.2; 0.7<u+v<1.0; 1.4.ltoreq.w+x.ltoreq.1.7; and, 1.3.ltoreq.w+x+y+z<2.0.Type: GrantFiled: April 30, 1996Date of Patent: March 30, 1999Assignee: Korea Advanced Institute of Science and TechnologyInventors: Jai-Young Lee, Ki-Young Lee, Han-Ho Lee, Dong-Myung Kim, Ji-Sang Yu, Jae-Han Jung, Soo-Geun Lee
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Patent number: 5489417Abstract: Spray cast copper-manganese-zirconium alloys are disclosed. In one embodiment, the alloy is spray cast in nitrogen and contains from about 1 ppm to about 20 ppm of dissolved nitrogen. In a second embodiment, the alloy contains an addition selected from the group consisting of chromium, titanium, erbium and mixtures thereof. The alloys are useful for sound damping as the combination of zirconium and the addition inhibits degradation of the specific damping capacity of the alloy.Type: GrantFiled: April 14, 1994Date of Patent: February 6, 1996Assignee: Olin CorporationInventors: William G. Watson, Harvey P. Cheskis, Sankaranarayanan Ashok
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Patent number: 4913752Abstract: A nickel-based solder for high-temperatured soldered joints contains up to 15 percent by weight silicon with necessary additives of titanium, zirconium, niobium, arsenic, phosphorus, copper, zinc, indium, germanium, scandium or carbon, and is manufactured in the form or a band or ribbon by rapid quenching from a melt. The resulting rapidly quenched solder ribbon is ductile, and has a crystalline structure.Type: GrantFiled: September 22, 1988Date of Patent: April 3, 1990Assignee: Vacuumschmelze GmbHInventor: Joachim Falk