Recoil Implantation Patents (Class 148/DIG132)
  • Formation of large grain polycrystalline films
    Patent number: 4904611
    Abstract: A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.
    Type: Grant
    Filed: November 25, 1988
    Date of Patent: February 27, 1990
    Assignee: Xerox Corporation
    Inventors: Anne Chiang, I-Wei Wu, Tiao-Yuan Huang
  • Method for producing a spatially periodic semiconductor layer structure
    Patent number: 4843028
    Abstract: In a method for producing a spatially periodic semiconductor layer structure in the form of a superlattice composed of an alternating arrangement of strained semicondutor layers of at least two different semiconductor compositions forming at least one heterojunction, at least one of the semiconductor layers is provided with a doped layer which extends essentially parallel to the heterojunction and whose layer thickness is no greater than the thickness of the semiconductor layer in which it is produced.
    Type: Grant
    Filed: December 8, 1988
    Date of Patent: June 27, 1989
    Assignee: Icentia Patent-Verwaltungs-GmbH
    Inventors: Hans-Joest Herzog, Helmut Jorke, Horst Kibbel