Abstract: A thin-film solar cell includes a thin-film active layer with a p-n Junction and a heat-resistant substrate for mechanically supporting the active layer, which substrate is formed by a plasma coating method. In the plasma coating method, a source material of the substrate is melted with a high-temperature plasma and sprayed onto a base plate by a high-speed gas jet. Since the substrate formed by the plasma coating method is porous, even if an inexpensive material including a lot of impurities is used as a material of the substrate, the impurities are collected in pores of the substrate and never sprout out of the substrate breaking through the thin-film active layer.

Abstract: According to the invention a method for making a semiconductor device comprising a step of preparing a semiconductor device having at least one semiconductor element formed in a semiconductor substrate, a plurality of electrode pads electrically connected to said semiconductor element and a passivation film provided on the surface thereof, a step of forming a leading layer on the surface of said electrode pads and a step of forming at least one bump electrode on the surface of said leading layer is provided and in this invention, since the prefabricated semiconductor device which may be sold by a standard supplier is used as the starting material and several steps for improving such a semiconductor device are applied thereto, the method for making a semiconductor device in which the whole manufacturing process thereof is simplified and the manufacturing cost thereof is remarkably reduced and moreover in which the developing cost thereof is greatly reduced development thereof can be speeded up, can be obtained

Abstract: A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

Abstract: A method of producing sheets of crystalline material is disclosed which is employed in the construction of tandem solar cells. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is then separated and used to form a tandem solar cell while the substrate can be reused to form additional sheets.

Abstract: In order to secure electronic components, and particularly large-area power semiconductors, to a substrate, first a paste formed of metal powder and a solvent is applied in the form of a layer to a contacting layer of the component and/or a contact surface of the substrate. The layer of paste is then dried. When the paste has dried, the component is placed onto the substrate, whereupon the entire arrangement is heated to a relatively low sintering temperature preferably between 180.degree. C. and 250.degree. C., and with simultaneous application of a mechanical pressure of at least 900 N/cm.sup.2. A connection which is thus achieved by such a pressure sintering at relatively low sintering temperatures is particularly suitable for securing power semiconductors produced in MOS-technology to a substrate.

Abstract: There is disclosed a substrate having thereon a layer of a semiconductor material, and a method for depositing and heating the semiconductor material on the substrate, wherein the substrate comprises a layer of organic polymer, a layer of metal or metal alloy, and a layer of dielectric material wherein the layer of dielectric material has a surface, remote from the metal, that is contiguous with the semiconductor material.

Abstract: A method of recovering intact at room temperature a layer of a first material, such as silicon carbide, produced by depositing it from the gas phase at a deposition temperature above room temperature on a substrate of a second material, such as silicon, having a different coefficient of thermal expansion than that of the first material. The substrate is separated from the layer prior to cooling, and then the separated layer is cooled to room temperature free of stresses otherwise present as a result of the different thermal expansions of the substrate and layer.