Abstract: A method and apparatus is disclosed for polishing a semiconductor wafer. A polishing pad including a first surface and a semiconductor wafer including a second surface are aligned to each other. To allow alignment of an axis of rotation of the surfaces, at least one of the first and second surfaces includes an adjustable axis of rotation. After the axis of rotation of the first and second surfaces is aligned, the adjustable axis of rotation is set, preferably with a magneto-rheological fluid or similarly acting material, to maintain a fixed position. Thereafter, the polishing pad is utilized to polish the semiconductor wafer.

Abstract: A polishing slurry for CMP of Cu, which comprises a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

Abstract: A new method is provided for the polishing of semiconductor surfaces such as the surface of a substrate, the surface of deposited copper and the surface of low-k layers of dielectric. The polishing method and apparatus of the invention comprise a new slurry delivery design whereby at least two different slurries can be independently controlled and mixed for delivery to a slurry container. The slurry container is in direct physical contact with a polishing pad, providing for the mixed slurry to be distributed over the surface of the polishing pad.

Abstract: A semiconductor wafer processing system for polishing a substrate that generally includes a base having a first side and a second side, and at least one drive system that is disposed on the first side of the base. One or more polishing heads are coupled to the drive system for retaining a workpiece during polishing. A first enclosure is disposed on the first side of the base and defines a first volume that includes the drive system. A second enclosure is disposed on the second side of the base and defines a second volume. A first exhaust is coupled to the second volume. When the system is coupled to a facilities exhaust or other air handler, the first exhaust ventilates the second volume. In another aspect, a method for processing a substrate is also disclosed. Generally, the method includes the steps of monitoring the flow metrics of a first exhaust from a first enclosure and a second exhaust from a second enclosure.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: A wafer carrier used for a chemical mechanical device has a polishing head and a pad conditioner. The polishing head has a retainer ring secured to a bottom of the polishing head to hold a wafer. The pad conditioner can be fixed on a surface of the retainer ring, attached to side surfaces of the retainer ring, or embedded in the retainer ring, such that the pad conditioner and the polishing head can be integrally formed.

Abstract: A chemical mechanical planarization system for planarizing wafers is provided. The system generally includes a transfer corridor, at least one corridor robot, one or more polishing modules and at least one loading device. The corridor robot is disposed in the transfer corridor and is positionable between a first end and a second end of the transfer corridor. The loading device is adapted to transfer workpieces between the transfer corridor and the polishing modules. Generally, the loading device includes at least one load cup. The one or more polishing modules each include one or more polishing heads for holding workpieces during processing.

Abstract: A method of determining efficiently parameters in chemical-mechanical polishing, especially a method includes a Neural-Taguchi method to seek the best parameter set to increase the quantity of output. This invention involves a time parameter to achieve end-point detection on line during the CMP procedure and also completes a maximum material removal rate (MRR) and a minimum within wafer non-uniformity (WIWNU) at the same time.

Abstract: An apparatus for punching CMP machine backing film. The apparatus comprises a base, a first plate, and a second plate. The base holds the backing-film. The first plate is disposed on the base in a manner such that it moves between a first position and a second position. The first plate abuts the backing-film when it is located at the second position. The second plate, having a plurality of punches, is disposed on the base in a manner such that it moves between a third position and a fourth position. The first plate is located at the first position when the second plate is located at the third position. The first plate is located at the second position when the second plate is located at the fourth position so that the punches pass through the first plate to punch the backing-film.

Abstract: A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

Abstract: An apparatus for processing a microelectronic workpiece in a micro-environment is set forth. The apparatus includes a first chamber member having an interior chamber wall and a second chamber member having an interior chamber wall. The first and second chamber members are adapted for relative movement between a loading position in which the first and second chamber members are distal one another and a processing position in which the first and second chamber members are proximate one another to define a processing chamber. At least one workpiece support assembly is disposed between the first and second chamber members for supporting the microelectronic workpiece.

Abstract: A wafer handling wand allows the efficient loading and unloading of semiconductor wafers to and from a CMP apparatus. The wand includes identical work piece gripping, alignment, and loading/unloading mechanisms on the top and bottom sides. A processed wafer can be unloaded from the apparatus onto one side of the wand and an unprocessed wafer can be loaded into the apparatus from the second side. The gripping mechanism includes a support area and a spaced apart moveable gripping finger. Wafer loading is facilitated by a cam attached to the support area that rotates when the cam contacts the apparatus. Upon rotation, the cam provides a surface for directing the work piece into the apparatus. The surface of the cam also includes an alignment aid that can be brought into contact with a reference surface on the apparatus to insure proper alignment between the wand and the apparatus.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: A chemical-mechanical polishing pad conditioning system and method. The system includes a conditioning device that may be used to condition a polishing pad. The system may also include a first conduit for introducing a chemical reagent onto the polishing pad, a second and third conduit for introducing the chemical reagent and a rinsing fluid respectively onto a conditioning surface of the.conditioning device or a storage apparatus of the conditioning device. The method includes introducing the chemical reagent onto the polishing pad during the pad conditioning process. The chemical reagent may further be introduced onto the storage apparatus or be introduced onto the conditioning surface of the conditioning device. The rinsing fluid may be introduced onto the polishing pad, the storage apparatus, or the conditioning surface.

Abstract: A method of using a finishing element having an abrasive finishing surface including organic lubricant for finishing semiconductor wafers is described. The organic lubricants with preferred in situ control can improve control of the coefficient of friction and help reduce unwanted defects. The method uses finishing control subsystem having a multiplicity of operative process sensors along with tracked information to improve in situ control of finishing. Differential lubricating film methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing with improved real time control.

Abstract: A wafer carrier used for a chemical mechanical device has a polishing head and a pad conditioner. The polishing head has a retainer ring secured to a bottom of the polishing head to hold a wafer. The pad conditioner can be fixed on a surface of the retainer ring, attached to side surfaces of the retainer ring, or embedded in the retainer ring, such that the pad conditioner and the polishing head can be integrally formed.

Abstract: A two piece retaining ring used for chemical mechanical polishing of semiconductor substrates. The two pieces of the ring are secured to each other by means of a central thread on the first piece and a mating thread on the second piece.

Abstract: A method of wafer reclaim, at least includes: provide a wafer; perform a first semiconductor process to let both film layer and numerous particles are formed on the wafer; perform chemical mechanical polishing process to let part of film layer is removed and scales of part of particles are decreased; perform wet etching process to let both residual film layer and residual particles are further removed; perform cleaning process to let surface of wafer is cleaned; and perform second semiconductor process to let a semiconductor structure is formed on wafer. Furthermore, concepts of the invention that both film layer and particles are thoroughly removed by both chemical mechanical polishing process and wet etching process can be applied as a method for cleaning wafer and a method for planarizing wafer.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the microelectronic substrate is engaged with a planarizing medium that includes a planarizing pad and a planarizing liquid. The planarizing liquid has a selected pH and abrasive elements in the planarizing pad have an isoelectric point that is at or below the pH of the planarizing liquid. For example, the abrasive elements can include coated or conglomerate elements formed from two materials, each having a different isoelectric point. Alternatively, different abrasive elements in the planarizing pad can have different isoelectric points. Accordingly, the abrasive elements can have a reduced affinity for components of the planaring liquid, such as corrosion-inhibiting agents. In another embodiment, high-frequency radiation, such as ultraviolet radiation, is directed toward the planarizing medium to control an amount of the corrosion-inhibiting agent adsorbed to the abrasive elements.

Abstract: A system of cleaning a CMP pad used for removing copper from a substrate, the system comprising an abrasive cleaning pad, a cleaning solution delivery system that delivers a cleaning solution, an analyzing system that monitors the characteristics of the cleaning solution optically and chemically, and a carriage that allows the analyzing system to monitor the cleaning solution at a plurality of locations on the CMP pad. The use of the abrasive cleaning pad and the cleaning solution removes contaminants from the CMP pad, and the contaminants are dissolved in the cleaning solution. By measuring the concentration of contaminants in the cleaning solution, the condition of the CMP pad can be monitored. To measure the concentration of the contaminants, changes in the refractive index and absorption of light in the cleaning solution are measured, wherein the refractive index and absorption depend on the concentration of the contaminants.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: A method and apparatus for supporting a web of polishing material are generally provided. In one embodiment, an apparatus for supporting a web of polishing material includes a web of polishing media having a first portion disposed across a support surface of a platen assembly and a second portion wound on a first roll coupled to the platen assembly. A tensioning mechanism is coupled to the platen assembly and adapted to tension the web of polishing media in response to a diameter of the second portion of the web of polishing material wound on the first roll.

Abstract: A method and apparatus for improving the corrosion resistance of chrome plated materials. After the materials to be chrome plated are mechanically abrasively polished, but before they are reverse etched, they are power washed with a high-pressure liquid. A sprayer with nozzles directed inwardly towards the materials directs water onto the material at pressures in the range of 1000 or 2500 to 3000 psi. After the materials are chrome plated, they are heated above the melting point of a buffing compound, and then the heated materials with the buffing compound applied are buffed. An induction heater is used, before or after the buffing compound is applied. Computer controls, responsive to operator input of the cross-sectional size, composition and/or speed of movement of the chrome plated materials, to in turn regulate the power to an induction coil heater.

Abstract: A method of using lubricating boundary layers for finishing semiconductor wafers is described. The lubricating boundary layer thickness is controlled to improve finishing and reduce unwanted surface defects. Differential lubricating boundary layer methods are described to differentially finish semiconductor wafers. Planarization and localized finishing can be improved using differential lubricating boundary layer methods of finishing.

Abstract: An arrangement for planarizing a surface of a semiconductor wafer. The arrangement includes a planarizing member having a planarizing surface configured to be (i) positioned in contact with and (ii) moved relative to the surface of the semiconductor wafer so as to remove material from the surface of the semiconductor wafer such that the surface of the semiconductor wafer is planarized. The arrangement also includes an adherence promoting ligand chemically bonded to the planarizing surface of the planarizing member. The arrangement further includes an abrasion particle chemically bonded to the adherence promoting ligand such that the abrasion particle is attached to the planarizing surface of the planarizing member. The arrangement also includes a conditioning bar having a conditioning portion positioned in contact with a wafer track defined on the planarizing member. The conditioning portion is configured so that the conditioning portion extends completely across the wafer track.

Abstract: The present invention provides a chemical mechanical polishing composition for planarizing copper and a method for planarizing, or initiating the planarization of, copper using the composition. The chemical mechanical polishing composition includes an oxidizing agent and a copper (II) compound. The composition optionally includes one or more of the following compound types: a complexing agent; a corrosion inhibitor; an acid; and, an abrasive. In one embodiment, the oxidizing agent is hydrogen peroxide, ferric nitrate or an iodate. In another embodiment, the copper (II) compound is CuSO4. The chemical mechanical polishing method involves the step of polishing a copper layer using a composition that includes an oxidizing agent and a copper (II) compound. The composition is formed in a variety of ways. In one embodiment, it is formed by adding the copper (II) compound to a solution containing the oxidizing agent, and any included optional compound types, in deionized water.

Abstract: Method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of abrasive particles which contact the wafer surface in combination with a reactive liquid solution essentially free of abrasive particles wherein the ionic strength of the solution is changed to effect a change in polishing.

Abstract: A subtract such as a semiconductor wafer, a glass substrate, or a liquid crystal display is polished to a flat mirror finish, and then is cleaned to a high degree of cleanliness. A polishing section having at least one polishing unit performs primary polishing and secondary polishing of the substrate by pressing the substrate against a polishing surface. A cleaning section cleans the substrate which has been polished to remove particles attached to the substrate by a scrubbing cleaning. Metal ions are removed from the substrate by supplying an etching liquid.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the method can include planarizing the microelectronic substrate with a fixed abrasive polishing pad while maintaining the pH of a planarizing liquid adjacent the polishing pad at an approximately constant level by buffering the planarizing liquid. The planarizing liquid can include ammonium hydroxide and ammonium acetate, ammonium citrate, or potassium hydrogen phthalate. In another embodiment, the planarizing liquid can have an initially high pH that has a reduced tendency to decrease during planarization.

Abstract: A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Abstract: A laminated wear ring for a chemical mechanical planarization (CMP) apparatus provides improved control of the removal rate of material from the edge of a wafer during a polishing/planarization operation. The laminated wear ring includes a high stiffness stainless steel base and a plastic laminate. The high stiffness stainless steel base avoids flexing of the wear ring during polishing and thus provides control of the flexing of a polish pad against which the wafer surface is pressed. The plastic laminate protects the stainless steel base from attack by the polishing slurry and provides a buffer that protects the stainless steel base from mechanically damaging the wafer and vice versa.

Abstract: Disclosed is a chemical mechanical polishing pad formed at a polishing surface thereof with a plurality of concentric wave-shaped grooves having different radiuses while having the same shape. Each groove has a desired depth, width, and shape. The chemical mechanical polishing pad provides effects of effectively controlling a flow of slurry during a polishing process, thereby achieving a stability in the polishing process in terms of a polishing rate, and achieving an enhancement in the planarization of a wafer.

Abstract: An apparatus for closed loop slurry distribution during semiconductor wafer polishing operations. The traditional peristaltic pump for slurry supply is eliminated thus eliminating irregularities in the conventional slurry supply. Common platform mounting of the slurry reservoir and the polishing apparatus resulting in concurrent and identical motion of the slurry supply reservoir and the polishing apparatus. The polishing medium is mounted on the outside of a cylinder as opposed to the conventional table mounting, the polishing medium rotates around the axis of the cylinder on which this polishing medium is mounted. The polishing pads are in direct physical contact with the slurry supply without the intervention of any slurry pumping arrangement.

Abstract: A slurry mixing feeder for feeding a slurry to a chemical mechanical polishing machine is disclosed. The slurry contains liquids at a desired mixing ratio. The liquids includes at least a dispersion of fine abrasive particles and a solution of an additive. The slurry mixing feeder comprises: suction ports for sucking the liquids, respectively, a number of said suction ports corresponding to that of the liquids; a discharge port for feeding the slurry to the chemical mechanical polishing machine; feed pumps arranged in feed lines for the respective liquids, said feed lines extending from the individual suction ports to the discharge port, for sucking the individual liquids in specific amounts to give the mixing ratio and delivering the thus-sucked liquids toward the discharge port; and dampers and pressure-regulated restrictors arranged in combination in the feed lines on delivery sides of the feed pumps, respectively. A slurry mixing and feeding method is also disclosed.

Abstract: The invention encompasses polishing systems for polishing semiconductive material substrates, and encompasses methods of cleaning polishing slurry from semiconductive substrate surfaces. In one aspect, the invention includes a method of cleaning a polishing slurry from a substrate surface comprising: a) providing a substrate surface having a polishing slurry in contact therewith; b) providing a liquid; c) injecting a gas into the liquid to increase a total dissolved gas concentration in the liquid; and d) after the injecting, providing the liquid against the substrate surface to displace the polishing slurry from the substrate surface.

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract: An apparatus and method for polishing the surface of a semiconductor wafer is provided in which the polishing pad has on its surface a multiplicity of nanoasperities which are particles having an imputed radius (of curvature) of about 0.5 to about 0.1 microns and sufficient resiliency to permanently deform by less than 10% which contact the wafer surface in combination with a reactive liquid solution which may be recirculated, analyzed, adjusted, and from which soluble reaction products may be removed.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: An polishing apparatus consists of a piston which is fixed to the rotation axis, a ceramic plate which is oppositely arranged against the piston via a silicone gel, and a cylinder which houses these components. The wafer is attached on the bottom surface of a backing pad, and will be pressed and rotated by the piston in order to polish the surface thereof.

Abstract: A chemical mechanical polishing (CMP) system and method for efficiently processing semiconductor wafers utilizes wafer transfer mechanisms that are strategically positioned in the system to efficiently transfer the wafers through the system. The efficient transfer of semiconductor wafers within the CMP system reduces congestion of wafers at various units of the system, which increases the throughput of the system. In addition to the efficient transfer of semiconductor wafers, the strategic positioning of the wafer transfer mechanisms minimizes the footprint of the CMP system.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: A self-cleaning apparatus for use in a chemical mechanical polishing tool. The apparatus includes a slurry-dispensing arm with a first end suspended over a polishing pad, and a second end for mounting to the chemical mechanical polishing tool. A slurry-dispensing nozzle is positioned under the first end for dispensing a polishing slurry against the polishing pad. The first end has a compound slanted top surface, a front face and adjoining side surfaces. The compound slanted top surface forms a longitudinal peak slanting from center to both sides and from the back end to the front face. The top surface of the first end has a liquid distribution manifold that is mounted distally from the front face and has a plurality of nozzles directed to spray deionized water to wash away slurry splatter from surfaces of the first end of the slurry dispensing arm during the water polishing cycle.

Abstract: A method of manufacturing semiconductor devices using an improved planarization process for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer using a fixed flexible planar interface material contacting the deformable material.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: The present invention relates to a lapping oil composition which is advantageously used in finish-grinding of a material to provide a high-quality grinding surface, without selective grinding, which is generally caused during lapping and polishing processes of the composite material. The lapping oil composition contains at least one acetylene glycol compound and preferably further contains at least one at least one phosphoric ester compound.

Abstract: The distribution and size distribution of polishing particles contained in a slurry to be supplied to a polishing unit are measured by a measuring machine. Polishing speed with respect to a wafer is controlled to be constant by controlling a physical quantity such as the rotation speed of a polishing surface plate, the rotation speed of a polishing head or the pressurizing force of the polishing head based on the measurement result.

Abstract: A method for planarizing a dielectric layer on a semiconductor wafer is provided. In one aspect, the wafer is coated with a resist and the resist selectively removed forming an uncoated peripheral portion of the wafer. The partially coated wafer is then exposed to an etchant such as RIE to etch the dielectric material not covered by the resist and forming a profiled dielectric layer having a thinner peripheral dielectric portion and a remaining thicker original dielectric central portion. The profiled wafer is then planarized using CMP. The dielectric layer is typically SiO2, PSG, BSP, or BPSG. In another method and apparatus of the invention, a dielectric coated wafer is secured to a rotating turntable and a liquid etchant sprayed at the periphery of the wafer from a distribution conduit to etch and remove dielectric from a circumferential edge of the wafer forming a profiled dielectric layer as above which is then planarized by CMP.

Abstract: A wafer property is controlled by a semiconductor processing tool using data collected from an in situ sensor. Initially, data relating to the wafer property is collected by the in situ sensor during a process executed according to wafer recipe parameters. Subsequently, the process may be adjusted by modifying the recipe parameters according to comparisons between the data collected by the in situ sensor relating to the wafer property and the results predicted by a process model used to predict wafer outputs. A subsequent process utilizing the data collected by the in situ sensor is then executed. In at least some embodiments of the present invention the data may be used for run-to-run control on subsequent wafers processed by the tool.

Abstract: A substrate such as a semiconductor wafer, a glass substrate, or a liquid crystal display is polished to a flat mirror finish, and then cleaning a polished substrate that is cleaned to a high degree of cleanliness. A polishing section having at least one polishing unit for performs primary polishing and secondary polishing of the substrate by pressing the substrate against a polishing surface. A cleaning section cleans the substrate which has been polished to remove particles attached to the substrate by a scrubbing cleaning. Metal ions are removed from the substrate by supplying an etching liquid.