Abstract: An alignment nozzle jig for centering a coater photoresist arm that includes an alignment nozzle block. The alignment nozzle jig also includes an endoscope holder removably secured to a bottom of the alignment nozzle block, an endoscope, and an alignment mark removably coupled to the endoscope holder opposite the alignment nozzle block. The alignment nozzle jig is retrieved from a nozzle bath by the coater arm and transferred to a center of a chuck in an associated process chamber. Via the endoscope, the coater photoresist arm is aligned with the center of the chuck using the alignment mark.

Abstract: A measurement processing process S103 of measuring a cut width of a film based on an image obtained by imaging, with an imaging unit 270, a peripheral portion of a substrate which is processed based on a substrate processing recipe; a creation process S602 of creating a management list in which a set value of the cut width of the film, a measurement value of the cut width of the film measured through the measurement processing process and time information at which the measurement result is obtained are correlated; an analysis process S603 (S606) of analyzing a state of the processed substrate based on the created management list; and a notification process S605 (S608, S609) of making a preset notification to a user based on an analysis result obtained through the analysis process are provided.

Abstract: It is an object to prevent adhesion of a processing liquid to a non-processing region of a substrate. In order to achieve the object, a substrate processing apparatus includes a substrate rotating mechanism, a discharging portion for discharging a processing liquid to a substrate, a moving portion for moving a discharging portion, and a controller. The discharging portion starts to discharge the processing liquid at a first position and is moved to a second position. The first position is a position of the discharging portion where a section of a passage of the discharging portion is projected onto a first region, and the second position is a position of the discharging portion where the section of the passage is projected onto a second region. The first region is a region on the peripheral edge side of the substrate from the second region.

Abstract: Imaging can be performed well even when an imaging device is disposed at a position facing a peripheral portion of a substrate. A substrate processing apparatus 16 which performs a processing of removing a film on a peripheral portion of a substrate W includes a rotating/holding unit 210 configured to hold and rotate the substrate; a first processing liquid supply unit 250A configured to supply a first processing liquid for removing the film onto the peripheral portion of the substrate while the substrate is being rotated in a first rotational direction R1 by the rotating/holding unit; and an imaging unit 270 provided at a position in front of an arrival region 902 of the first processing liquid on the substrate with respect to the first rotational direction R1, and configured to image the peripheral portion of the substrate.

Abstract: A system and method that applies a rotating cylinder within which is mounted water jetting apparatus that when applied, causes high pressure water jets to be ejected from nozzles onto combined non-metal and metal substrate materials, and thereby separate non-metal and metal components from one another.

Abstract: A processing liquid is supplied onto a substrate rotated by a spin chuck in a coating processing unit so that a film of the processing liquid is formed, and a rinse liquid is supplied to a peripheral edge of the substrate so that a processing liquid on the peripheral edge of the substrate is removed. An edge cut width between a position of an outer peripheral portion of the substrate rotated by the spin chuck in an edge exposure unit and a position of an outer peripheral portion of a film on the substrate is detected. Based on the detected edge cut width, a positional deviation of the center of the substrate held in the spin chuck from a rotation center of the spin chuck in the coating processing unit is determined while a supply state of the rinse liquid by an edge rinse nozzle is determined.

Abstract: A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path.

Abstract: In certain embodiments the metal liftoff tool comprises an immersion tank for receiving a wafer cassette with wafers therein, the immersion tank including an inner weir, a lifting and lowering mechanism capable of raising and lowering the wafer cassette while submerged in fluid in the immersion tank, low pressure high velocity primary spray jets for stripping the metal, the primary spray jets positioned at opposing sides of the immersion tank parallel to the wafer surfaces planes, and secondary spray jets for pressure equalization force, positioned at the bottom of the immersion tank. A wafer lift insert is positioned at the bottom of the immersion tank to receive and periodically lift the wafers within the cassette.

Abstract: In a substrate processing apparatus, provided are an upper nozzle for supplying a chemical liquid having a temperature higher than that of a substrate onto an upper surface of the substrate and a heating liquid supply nozzle for supplying a heating liquid having a temperature higher than that of the substrate onto a lower surface of the substrate. It is thereby possible to suppress or prevent a decrease in the temperature of the chemical liquid supplied on the upper surface of the substrate from a center portion of the substrate toward an outer peripheral portion thereof. In a supply nozzle, the heating liquid supply nozzle is positioned on the inner side of a heating gas supply nozzle for ejecting heating gas in drying the substrate. It is thereby possible to simplify and downsize a structure used for heating the lower surface of the substrate.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A method of removing a coating film of a substrate peripheral portion, is provided with holding and supporting a circular substrate by allowing a transfer body to transfer a rear surface of the substrate to a supporting part; removing a coating film in the shape of a ring by a predetermined width size by supplying a solvent from a solvent nozzle to a peripheral portion of the coating film formed on the surface of the substrate; transferring the substrate to an inspection module for inspecting a state of the coating film by imaging the entire surface of the substrate; detecting a removal region of the coating film based on image data acquired by the inspection module; and correcting a delivery position of a succeeding substrate with respect to the supporting part by the transfer body based on the detection result of the removal region of the coating film.

Abstract: In a method for manufacturing a printed circuit board, a substrate, including a number of plated through holes (PTHs) is provided. Each of the PTHs has an electrically conductive layer plated on its inner wall and includes an electrically connecting portion and a stub. A protective layer is formed on a surface of the substrate adjacent to the stub. An etching device, including an upper plate and a number of spray tubes corresponding to the PTHs, is provided. Each of the spray tubes includes a protruding portion beyond the upper plate. The substrate is arranged in such a manner that the protective layer is in contact with the upper plate and the protruding portions are received in the stubs. After that, the protruding portions spray an etchant to etch and remove the electrically conductive layer of the stubs, and the protective layer is removed.

Abstract: A substrate treatment apparatus includes: a chamber; a substrate being treated with a treatment liquid in the chamber; a temperature measuring unit which measures an internal air temperature of the chamber and/or a temperature of the treatment liquid; a temperature adjusting unit which changes the internal air temperature and/or the temperature of the treatment liquid; a storage unit which stores a map defining a relationship between the air temperature and the treatment liquid temperature so that a treatment liquid temperature level for a given air temperature level is lower than the given air temperature level; and a temperature controlling unit which sets a target value of the internal air temperature of the chamber or the temperature of the treatment liquid based on the map and a measurement value detected by the temperature measuring unit, and controls the temperature adjusting unit based on the target value.

Abstract: An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: The present invention relates to an apparatus for spraying an etchant and a method for manufacturing a printed circuit board. In one exemplary embodiment the apparatus includes a manifold, a plurality of feed pipes in fluid communication with the manifold, each of the feed pipes having a plurality of spray nozzles mounted thereon, the feed pipes cooperatively constitute a spray region, and a pressure-boosting device configured for increasing a spray pressure of the spray nozzles which are located at a central area of the spray region. The apparatus can overcome “the puddle effect” on an upper surface of the printed circuit board.

Abstract: Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.

Abstract: An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

Abstract: A method is described for making a partially transparent thin film solar panel based on transparent glass or plastic substrates by creating an array of small light transmitting apertures through all the opaque layers by using an ink jet print head to apply droplets of an etching fluid to the top electrode layer to form apertures in the electrode layer. These apertures may then be used as a contact mask for etching holes though the underlying active layer (if this is opaque). In this second stage, the etchant may be applied using an ink jet print head or by spraying or the panel may be immersed in the etchant.

Abstract: An exemplary apparatus for wet processing a substrate includes a conveyor configured for conveying the substrate along a conveying direction and parallel spray pipes. The spray pipes are substantially parallel with the conveyor and substantially perpendicular to the conveying direction. Each spray pipe consisting of at least one spray nozzle faces the conveyor, and the number of the at least one nozzle of each spray pipe increases along the conveying direction.

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer. An inlet port proximately disposed near the outlet port vacuums the heated fluid to remove the heated fluid from the surface of the semiconductor wafer.

Abstract: A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole.

Abstract: A bevel unit comprises CCDs and processing liquid nozzles, and the CCDs take an image of a circumferential edge surface of a substrate. An image processing part detects the distances between the circumferential edge surface of the substrate and the processing liquid nozzles by image processing the signals from the CCDs. A control unit compares thus detected distances between the circumferential edge surface of the substrate and the processing liquid nozzles with set distances from the circumferential edge surface of the substrate to the processing liquid nozzles which are set in a recipe so as to be a desired rim etching width, and calculates an amount of displacement between the detected distances and the set distances. In accordance with the amount of displacement, the control unit activates motors and accordingly positions the bevel unit.

Abstract: A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Abstract: A method for producing a metallized image on a sheet material includes impregnating the material with a metal salts-containing solution and exposing the specified material points to a pulse laser radiation. The interaction of the pulses with the solution within a laser spot irritates a photochemical reaction resulting in a metal ion reduction into the elementary state thereof by associating the required number of electrons and deposition of metallic film which is firmly fixed to the filler of the sheet material in the laser spot area on the material surface. In case of sufficient laser radiation power, a recess is formed on the sheet material surface, and the metallic film is deposited on the bottom of the recess.

Abstract: An apparatus (100) for spraying an etchant solution on a preformed printed circuit board (30) includes a number of feed pipes (40) for supplying the etchant solution and a number of nozzles (45) mounted on the feed pipes. Each of the feed pipes has a middle portion (402) and two end portions (401). The middle portions of the feed pipes are located on a first plane and the end portions of the feed pipes are located on a second plane parallel to the first plane. The number of nozzles are mounted on the middle portion and the two end portions of each feed pipe. The number of nozzles are in fluid communication with the feed pipes.

Abstract: An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.

Abstract: On the top surface of a substrate, an atmosphere blocker plate, of which plan size is equal or larger than the substrate size, is disposed opposing to the top surface of the substrate. In the rim portion of the atmosphere blocker plate, a vertical through hole is formed so that a nozzle can be inserted into the hole. Nozzle move mechanism moves the nozzle to insert the nozzle to the through hole and position it to the opposing position that is opposed to the top rim portion of the substrate and to the retract position that is away from the atmosphere blocker plate. Processing liquid is supplied from the nozzle, which is positioned to the opposing position, to the top rim portion of the substrate.

Abstract: Method for regulating the titration of a solution, in which a predetermined amount of a product contained in the solution is added to the solution according to a time interval, called the addition interval, which is proportional to the product of the time degradation coefficient D of the product in solution and the total volume Vt of the solution at the time of the addition.

Abstract: A semiconductor apparatus for processing a wafer comprises a stage, a fluid supply unit, and a cleaning unit. The stage supports the wafer. The fluid supply unit provides a first fluid, wherein the fluid supply unit is moveable between a second position and a first position. The cleaning unit provides a second fluid, wherein when the fluid supply unit is in the first position, the fluid supply unit provides the first fluid toward the wafer, and when the fluid supply unit is in the second position, the cleaning unit blows the second fluid toward a surface of the fluid supply unit to clean the surface thereof.

Abstract: An apparatus, system and method for removing a damaged material from a low-k dielectric film layer include identifying a control chemistry, the control chemistry configured to selectively remove the damaged material from the low-k dielectric film layer, the damaged material being in a region where a feature was formed through the low-k dielectric film layer; establishing a plurality of process parameters characterizing aspects of the damaged material to be removed and applying the control chemistry to the low-k dielectric film layer, the application of the control chemistry being defined based on the established process parameters of the damaged material, such that the damaged material is substantially removed from the areas around the feature and the areas around the feature are substantially defined by low-k characteristics of the low-k dielectric film layer.

Abstract: A semiconductor device manufacturing apparatus is disclosed. The semiconductor device manufacturing apparatus applies a process to a semiconductor wafer by supplying a vapor of a corrosive liquid source to a processing container. An electrode is immersed in a storing container which stores the corrosive liquid source. The main material of the electrode is a metal whose ionization tendency is less than that of a metal of the storing container, and a protection current is applied between them by a DC power source. Or another electrode is used. The main material of the electrode is a metal whose ionization tendency is greater than that of the metal of the storing container and the metal of the electrode does not damage the semiconductor wafer. A protection current is applied between the storing container and the electrode by utilizing the difference of the ionization tendency between them.

Abstract: A processing apparatus includes a processing bath having a liquid injection port in the bottom thereof, a rectifier plate located between the bottom of the processing bath and a position at which an object to be processed is positioned, and a distribution portion extending between the rectifier plate and the liquid injection port and over the liquid injection port. The distribution portion includes an opposing portion opposing the liquid injection port, a surrounding portion surrounding a space between the opposing portion and the liquid injection port, and a guard portion or extended portion extending outwardly from the bottom end of the surrounding portion.

Abstract: An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

Abstract: There are provided a spin processing method and a spin processing apparatus with which the improvement of a processing speed in spin processing can be compatible with the saving of a processing solution. The spin processing method comprises holding and fixing the wafer on the upper surface of the spin table, and supplying the processing solution to the surface of the wafer by the predetermined amount while rotating the spin table, to process the surface of the wafer, wherein the processing solution is supplied while the wafer is heated and maintained at the predetermined temperature, to process the wafer. The predetermined temperature for heating the wafer is equal to or higher than 25° C.

Abstract: In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface.

Abstract: A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface, a side surface, a rear surface on the side opposite the active surface, and a plurality of semiconductor elements formed on the active surface; forming the side surface of the semiconductor wafer so that an angle defined by at least a portion of the side surface of the semiconductor wafer and the rear surface of the semiconductor wafer becomes an acute angle; and performing a spin etching in which etching liquid is dripped onto the rear surface of the semiconductor wafer while blowing air toward the active surface of the semiconductor wafer and toward the side surface of the semiconductor wafer and while rotating the semiconductor wafer.

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.

Abstract: A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage plates 23 capable of being disposed substantially flush with the surface of a substrate M mounted on a support table 22 is positioned close to the substrate M mounted on the support table 22. Removing nozzles 30 jet a solvent toward edge parts of the substrate M and suck a solution produced by dissolving part of the resist in the solvent while the removing nozzles 30 are moved along side edges of the substrate M and the approach stage 20 disposed close to the substrate M. Thus, the removing nozzles 30 jet the solvent uniformly over the edge parts and corners of the substrate M and suck the solution without changing modes of jetting the solvent and sucking the solution.

Abstract: A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.

Abstract: The substrate processing apparatus includes a first etching mode and a second etching mode. In the first etching mode, a first nozzle is positioned at a first processing position and a chemical solution is supplied from the first nozzle to a top rim portion of the rotating substrate. In the second etching mode, a second nozzle is positioned at a second processing position and DIW is supplied to the top rim portion to which the chemical solution adheres, while the chemical solution is supplied from the first nozzle positioned at the first processing position to the top rim portion of the rotating substrate. The etching mode is selectively switched between the two etching modes in accordance with a property of the thin film adhering to the substrate.

Abstract: The present invention relates to an apparatus for spraying an etchant and a method for manufacturing a printed circuit board. In one exemplary embodiment the apparatus includes a manifold, a plurality of feed pipes in fluid communication with the manifold, each of the feed pipes having a plurality of spray nozzles mounted thereon, the feed pipes cooperatively constitute a spray region, and a pressure-boosting device configured for increasing a spray pressure of the spray nozzles which are located at a central area of the spray region. The apparatus can overcome “the puddle effect” on an upper surface of the printed circuit board.

Abstract: An apparatus (100) for spraying an etchant solution on a preformed printed circuit board (30) includes a number of feed pipes (40) for supplying the etchant solution and a number of nozzles (45) mounted on the feed pipes. Each of the feed pipes has a middle portion (402) and two end portions (401). The middle portions of the feed pipes are located on a first plane and the end portions of the feed pipes are located on a second plane parallel to the first plane. The number of nozzles are mounted on the middle portion and the two end portions of each feed pipe. The number of nozzles are in fluid communication with the feed pipes.

Abstract: PROBLEM TO BE SOLVED: To provide a practical technology for enabling thickness reduction of an FPD. SOLUTION: Electrodes 11 are formed on one of a pair of glass substrates 1 and the glass substrates 1 are laminated via a sealing material 12. Thereafter, an external surface thinning process which reduces the thickness of external surfaces of the glass substrates 1 is performed. During said thinning process, an eluate L composed of hydrofluoric acid is sprayed from nozzles 4 toward the external surfaces of the glass substrates 1 by pressure within a range from 0.5 to 3.5 kg/cm2 under an acceleration larger than the acceleration caused by its own weight. The external surfaces are impacted by the eluate L for the purpose of thinning through the physical action caused by the impact and the chemical reaction of the eluate L.

Abstract: An agitated wet process machine comprises a delivery system and many jets. The delivery system comprises a delivery belt and many rollers, wherein the rollers on the upper side or the lower side of the delivery belt are used to deliver workpieces. Many blades are added on each of the rollers to agitate a chemical solution. The jets above and below the delivery belt are used to spray or supply the chemical solution to the workpieces.

Abstract: An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.