Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract: A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, in which a mask is kept at a defined short distance to the wafer-shaped article such that liquid can be retained between the mask and the defined area of the wafer-shaped article by capillary forces.

Abstract: A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.

Abstract: A substrate treating apparatus for treating substrates as immersed in a treating solution includes a treating tank for storing the treating solution and accommodating the substrates, a holding mechanism for holding a plurality of substrates in upstanding posture in the treating tank, and a drive mechanism for revolving the holding mechanism about a virtual horizontal axis extending in a direction of alignment of the plurality of substrates. The plurality of substrates are treated, while the holding mechanism holding the plurality of substrates is immersed in the treating solution, and the drive mechanism is operated to revolve the plurality of substrates about the horizontal axis.

Abstract: Broadly speaking, a wafer processing chamber for performing a high pressure wafer process is provided. More specifically, the wafer processing chamber incorporates a wafer processing volume and an outer chamber volume. The wafer processing volume is configured to contain a high pressure. The outer chamber volume is configured to serve as a buffer between the high pressure of the wafer processing volume and a lower pressure of an environment outside the wafer processing chamber. Thus, the outer chamber volume can control a pressure differential between the high pressure wafer processing volume and the lower pressure outside environment. In this manner, the wafer processing chamber, incorporating the high pressure wafer processing volume, can interface with a conventional wafer transfer module operating under either atmospheric or sub-atmospheric pressure conditions.

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract: A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps.

Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: A method for spinning a wafer to enable rinsing and drying is provided. The method includes engaging the wafer at a wafer processing plane and spinning the wafer. The method further includes moving a wafer backside plate from a first position to a second position as spinning of the wafer proceeds to an optimum spinning speed. The second position defines a reduced gap between an under surface of the wafer and a top surface of the wafer backside plate. The method also includes repositioning the wafer backside plate from the second position to the first position as the spinning reduces in speed. The first position defines an enlarged gap to enable loading and unloading of the wafer from the engaged position.

Abstract: In this disclosure, air flow is formed above chemical liquid film and a move of the chemical liquid is generated by making the air flow into a contact with the surface of chemical liquid. Further, a negative pressure is generated in a space between a processing object substrate and a plate by rotating the plate. Consequently, uniformity of processing of chemical liquid is improved, so that liquid removing step can be carried out effectively. As a result, yield rate of chemical liquid treatment can be improved.

Abstract: A device (1) for treating objects, in particular silicon wafers (2), with a fluid (3), comprising a container (4) that holds the fluid (3); a rotatable carrying arrangement (5) for accommodation of the objects to be treated, which is disposed at least partially in the container (4); and a rotatably drivable shaft, which is run on at least one bearing (13, 14) and joined to the carrying arrangement (5); with the bearing (13, 14) including a first bearing member (22), which is joined to the shaft, and a second bearing member (24), which adjoins the first bearing member (22) and contains superconductive material; with the first bearing member (22) being kept spaced from the second bearing member (24) by magnetic forces.

Abstract: Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

Abstract: To achieve a uniform coating of a substrate, with an apparatus and a method for coating substrates, according to which the substrate is supported on a substrate holder in such a way that a substrate surface that is to be coated is exposed, and the substrate is rotated together with the substrate holder, a cover can be secured to the substrate holder and together with the substrate holder forms a sealed chamber for the substrate.

Abstract: Techniques for detecting endpoints during semiconductor dry-etching processes are described. The dry-etching process of the present invention involves using a combination of a reactive material and a charged particle beam, such as an electron beam. In another embodiment, a photon beam is used to facilitate the etching process. The endpoint detection techniques involve monitoring the emission levels of secondary electrons and backscatter electrons together with the current within the sample. Depending upon the weight given to each of these parameters, an endpoint is identified when the values of these parameters change more than a certain percentage, relative to an initial value for these values.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: A system for processing a workpiece includes a process head assembly and a base assembly. The process head assembly has a process head and an upper rotor. The base assembly has a base and a lower rotor. The base and lower rotor have magnets wherein the upper rotor is engageable with the lower rotor via a magnetic force created by the magnets. The engaged upper and lower rotors form a process chamber where a semiconductor wafer is positioned for processing. Process fluids for treating the workpiece are introduced into the process chamber, optionally while the processing head spins the workpiece. Additionally, air flow around and through the process chamber is managed to reduce particle adders on the workpiece.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: The present invention generally provides an improved apparatus and method for removing an edge bead from a substrate. The apparatus includes a processing chamber having an edge bead removal fluid distribution system positioned therein and a substrate support member positioned in the processing chamber proximate the fluid distribution system. The substrate support member generally includes an upper substrate support surface having a plurality of fluid dispensing apertures formed therein, at least three capillary ring support posts radially positioned about a perimeter of the upper substrate support surface, and a annular capillary ring having a planar upper surface rigidly mounted to the capillary ring support posts.

Abstract: The present invention provides a wafer handling device having a base plate (G; G′), which has a first and a second supporting surface for a respective wafer (W1, W2) to be laid on; and a fixing device (K1, K2, S; K1′, K2′, S′) for the detachable fixing of the respective wafer (W1, W2) on the first and second supporting surface; the fixing device (K1, K2, S; K1′, K2′, S′) being configured in such a way that it contacts the respective wafer (W1, W2) only in the outer edge region of the side facing away from the supporting surface.

Abstract: A semiconductor wafer processing substrate support assembly, comprises a substrate support platform having a centrally disposed recess, coupled to a base disposed above the centrally disposed recess, a plate disposed above the base, and a substrate support disposed above the plate. The substrate support assembly further comprises a plurality of o-rings having a plurality of lobes, wherein a first lobed o-ring of the plurality of lobed o-rings is disposed between the support platform and the base, a second lobed o-ring is disposed between the base and the plate, and a third lobed o-ring is disposed between the plate and the substrate support. Moreover, the plurality of lobed o-rings are utilized in the support assembly for reducing the number of o-rings required in the support assembly.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: A rotary substrate processing apparatus includes a rotor 1 having a holding member for holding a plurality of semiconductor wafers W arranged at appropriate intervals and a motor 4 for rotating the rotor 1. The holding member includes open/close holding rods 3 that are moved to open or close the rotor 1 in inserting the wafers W into the rotor 1 sideways and a plurality of constant-position holding rods 2a to 2d for holding the wafers W in cooperation with the open/close holding rods 3. Among the constant-position holding rods 2a to 2d, at least one constant-position holding rod 2a is equipped with a plurality of press members 5 which move toward respective peripheral portions of the wafers W by centrifugal force due to the rotation of the rotor 1. Consequently, it becomes possible to make the wafers W follow the rotation of the rotor 1 ensurely and also possible to reduce slip between the open/close holding rods 3, the constant-position holding rods 2a to 2d and the wafers W.

Abstract: An embodiment of the invention is an edge-contact ring 15 used to support a wafer 3 on a pedestal plate 16.

Abstract: A surface isolation device for isolating a predetermined area of a second surface of a wafer from an etching solution while the etching solution etches a first surface of the wafer to form a plurality of manifolds in the wafer. The surface isolation device has a base for positioning the wafer, a fixture for fixing the wafer on the base, and an isolation ring positioned on the base for isolating the predetermined area from the etching solution. When the fixture fixes the wafer on the base, the wafer sticks to the isolation ring, forming a seal that isolates the predetermined area from the etching solution.

Abstract: Apparatus and method for processing a substrate are provided. The apparatus for processing a substrate comprises: a chamber having a first electrode; a substrate support disposed in the chamber and providing a second electrode; a high frequency power source electrically connected to either the first or the second electrode; a low frequency power source electrically connected to either the first or the second electrode; and a variable impedance element connected to one or more of the electrodes. The variable impedance element may be tuned to control a self bias voltage division between the first electrode and the second electrode. Embodiments of the invention substantially reduce erosion of the electrodes, maintain process uniformity, improve precision of the etch process for forming high aspect ratio sub-quarter-micron interconnect features, and provide an increased etch rate which reduces time and costs of production of integrated circuits.

Abstract: A substrate processing apparatus comprises a spin chuck holding and rotating a substrate and an atmosphere blocking member, corresponding in planar shape and size to the substrate, arranged oppositely and proximately to the upper surface of the substrate and formed with a processing solution discharge port and a gas discharge port discharging a processing solution and gas to the central portion of the upper surface of the substrate respectively. The atmosphere blocking member is formed with an outer gas discharge port outside the gas discharge port in plan view for discharging the gas to the upper surface of the substrate. The outer gas discharge port is so formed on the atmosphere blocking member that an arrival position of the gas discharged from the outer gas discharge port is closer to the center of the upper surface of the substrate held by a spin base than an intermediate portion between the center and the outer peripheral edge of the upper surface.

Abstract: A system and method for removing a predetermined length of coating from a fiber optic cable. The system includes a chemical bath, and a system for forming a loop in a fiber optic cable. The loop forming system includes a vertical column, and a slide arm having a guide collar portion slidably provided on the vertical column, and a distal portion extending away from and integral with the guide collar portion. The loop forming system further includes a mount shaft extending from and connected to the distal portion of the slide arm, the mount shaft having clamps and a tensioning spring for retaining portions of the fiber optic cable. A push rod movably extends through the mount shaft, and connects to a fiber optic cable loop former. The fiber optic cable loop former engages a surface of the mount shaft and is pushed away therefrom by the push rod during formation of the loop in the fiber optic cable.

Abstract: An apparatus and a method for etching a plurality of glass panels are disclosed. The apparatus is constructed by mounting a panel holder in an etch tank equipped with a rotating means for rotating the panel holder during the etching process. The panel holder is adapted for receiving a plurality of glass panels and mounting the panels in a vertical position with at least two edges of the panels mounted in a plurality of tracks for protecting conductive elements formed on the edges of the panels and also for holding the panels securely during the rotation of the panel holder. The method for etching the panels can be carried about at a rotational speed between about 5 rpm and about 60 rpm in an etchant solution of a diluted acid such as HF having a concentration of at least 5 vol. %. A suitable immersing time for the plurality of glass panels in the diluted etchant for producing panels of smaller thicknesses is at least 3 min.

Abstract: An apparatus for forming a loop in a filament comprising a first wall having a first guide slot formed therein and a second wall having a second guide slot formed therein coplanar and parallel to the first guide slot. The first wall is opposite the second wall and each of the guide slots has opposing ends. A first gripper holds a filament at a first location. The first gripper is mounted from the first wall to the second wall at an end of each of the first guide slot and the second guide slot. The apparatus also includes a movable gripper to hold the filament at a second location. The movable gripper has a separation from the first gripper and is mounted from the first wall to the second wall adjacent to the other end of each of the first guide slot and the second guide slot for movement towards the first gripper to reduce the separation between them. This produces a loop of filament between the first gripper and the moveable gripper.

Abstract: A method and an apparatus for removing coating layers from the top of alignment marks on a wafer situated in a spin processor are described. The method may be carried out by first providing a spin process equipped with a rotatable wafer pedestal, then providing a wafer that has at least one alignment mark covered by a coating layer, mounting an edge ring on an outer periphery of the wafer pedestal, the edge ring has at least one tab section extending outwardly from an inner periphery of the edge ring, then positioning the wafer faced down and supported by an inert gas flow on the edge ring such that a narrow gap is formed between the tab section on the edge ring and the alignment marks and dispensing an etchant onto a backside of the wafer while rotating.

Abstract: An apparatus for etching a glass substrate includes a first bath containing an etchant, at least one porous panel having a plurality of jet holes in the first bath, the porous panel containing the etchant to jet the etchant against the glass substrate, a container storing the etchant, and a pump supplying the etchant from the container to the porous panel, the pump being connected to the container and the porous panel.

Abstract: A wafer protection apparatus for holding a wafer in a liquid. The wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion. A reaction rate to the liquid of the second portion is faster than that of the first portion. The wafer protection apparatus comprises a first base, a second base, and a first sealing member. The first base holds the wafer in a manner such that the first base is in contact with the first surface of the wafer. The second base is connected with the first base. The first sealing member is disposed on the second base so as to abut the first portion of the second surface of the wafer.

Abstract: An apparatus for use in processing a workpiece to fabricate a microelectronic component is set forth. The apparatus comprises a process container having a process fluid therein for processing the workpiece and a workpiece holder configured to hold the workpiece. A position sensor is employed to provide position information indicative of the spacing between a surface of the workpiece and a surface of the process fluid. A drive system provides relative movement between the surface of the workpiece and the surface of the process fluid in response to the position information. Preferably, the relative movement provided by the drive system comprises a first motion that causes the surface of the workpiece to contact the surface of the process fluid, and a second motion opposite the direction all of and following the first to generate and maintain a column of process fluid between the surface of the process fluid and the surface of the workpiece.

Abstract: A device for processing a substrate comprises a processing vessel (1), an outer vessel (2) for surrounding the processing vessel (1) which outer vessel (2) can be sealed, a first supporting member (4) for bringing the substrate (3) into and out from the processing vessel (1) which first supporting member (4) supports the substrate (3) in a standing manner, and a second supporting member (5) for transferring the substrate (3) between the first supporting member (4) which second supporting member (5) is movable up and down within the processing vessel (1). The device processes the entire surface of the substrate (3) uniformly and prevents varying in processing from occurrence.

Abstract: An apparatus and a method for mounting a wafer and etching a wafer backside in an etchant solution are provided. The apparatus is constructed by a first circular disc that has a first sidewall integrally formed, a gas inlet in the first circular disc or the first sidewall, a second circular disc that has a second sidewall integrally formed for positioning inside the first circular disc and forming a first cavity therein between, a third circular disc that has a third sidewall integrally formed for positioning inside the second circular disc and forming a second cavity therein between, a gas outlet in the second circular disc for withdrawing air from the second cavity, and sealing means positioned on top of the sidewalls for providing a substantially sealed second cavity when a wafer is positioned on top of the sidewalls.

Abstract: A wafer is supplied from a wafer cassette to an etching part by a wafer transport robot so as to be etched. After the etching process, a wafer frame is supplied from a wafer frame supply part to a mount part. The mount part to which the wafer frame is supplied moves to the upper part of a processing vessel of the etching part, and mounts the wafer at that position. After that, the mount part returns to its original position. A wafer frame collecting robot collects the wafer frame from the mount part that has returned to its original position, and stores the wafer frame in the wafer frame cassette.

Abstract: In a first embodiment, a susceptor is provided having a substrate supporting surface and an internal support frame that provides mechanical strength in a plane orthogonal to the substrate supporting surface, and provides flexibility in a plane parallel to the substrate supporting surface.

Abstract: Disclosed is an improved apparatus for holding a bubble plate of an etching apparatus, in place with a cylinder, which is applicable to a glass substrate etching process, in order to facilitate changing and cleaning of the as bubble plate in a short period of time, as well as to prevent a low-quality etching and damage of the glass substrate caused by displacement of cassette guides in the etching apparatus. The etching apparatus according to the invention includes an etching bath having an etching solution, a plurality of cassette guides on a bottom surface of the etching bath, a cylinder on an external side of the etching bath, a plurality of plungers on the cylinder and the cassette guides, and a bubble plate fixed by the cassette guides.

Abstract: Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146).

Abstract: An apparatus for forming a loop in a filament comprising a first wall having a first guide slot formed therein and a second wall having a second guide slot formed therein coplanar and parallel to the first guide slot. The first wall is opposite the second wall and each of the guide slots has opposing ends. A first gripper holds a filament at a first location. The first gripper is mounted from the first wall to the second wall at an end of each of the first guide slot and the second guide slot. The apparatus also includes a movable gripper to hold the filament at a second location. The movable gripper has a separation from the first gripper and is mounted from the first wall to the second wall adjacent to the other end of each of the first guide slot and the second guide slot for movement towards the first gripper to reduce the separation between them. This produces a loop of filament between the first gripper and the moveable gripper.

Abstract: A method and apparatus for supporting a web of polishing material are generally provided. In one embodiment, an apparatus for supporting a web of polishing material includes a web of polishing media having a first portion disposed across a support surface of a platen assembly and a second portion wound on a first roll coupled to the platen assembly. A tensioning mechanism is coupled to the platen assembly and adapted to tension the web of polishing media in response to a diameter of the second portion of the web of polishing material wound on the first roll.

Abstract: A method and apparatus for etching a semiconductor die are disclosed whereby flowing an etchant material across an inactive thereof thins the semiconductor die. In one embodiment, the etchant includes a mixture of nitric acid, hydrofluoric acid, and acetic acid and turbulently flows from one edge of the semiconductor die, across the inactive surface of the semiconductor die, to an opposing edge of the semiconductor die.

Abstract: A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, boron source gas, and a carrier gas is fed into the deposition chamber. The carrier gas is fed into the deposition chamber at a rate so that the residence of the carrier gas in the deposition chamber is less then or equal to 3 seconds or alternatively has a velocity of at least 4 inches/sec. In another embodiment of forming a boron doped amorphous for polycrystalline silicon film a substrate is placed into a deposition chamber. The substrate is heated to a deposition temperature between 580-750° C. and the chamber pressure reduced to a deposition pressure of less than or equal to 50 torr. A silicon source gas is fed into the deposition at a rate to provide a silicon source gas partial pressure of between 1-5 torr.

Abstract: A rotary substrate processing apparatus includes a rotor 1 having a holding member for holding a plurality of semiconductor wafers W arranged at appropriate intervals and a motor 4 for rotating the rotor 1. The holding member includes open/close holding rods 3 that are moved to open or close the rotor 1 in inserting the wafers W into the rotor 1 sideways and a plurality of constant-position holding rods 2a to 2d for holding the wafers W in cooperation with the open/close holding rods 3. Among the constant-position holding rods 2a to 2d, at least one constant-position holding rod 2a is equipped with a plurality of press members 5 which move toward respective peripheral portions of the wafers W. by centrifugal force due to the rotation of the rotor 1. Consequently, it becomes possible to make the wafers W follow the rotation of the rotor 1 ensurely and also possible to reduce slip between the open/close holding rods 3, the constant-position holding rods 2a to 2d and the wafers W.

Abstract: An method and apparatus for forming wafers of varying thickness'. The apparatus includes a template. The template is formed of a main disk including a plurality of cavities extending into a first side thereof and a backing plate positioned on a side of the main disk opposite the first side. Holding disks are moistened and positioned within respective cavities for releasably securing a wafer in the cavity. When the template is releasably secured to and rotatable with a rotating head and positioned such that the first side faces a lapping and polishing surface, wafers received by the cavities are lapped and polished upon rotation of the rotating head. A plurality of shims are selectively received within respective cavities between a base of the cavity and the holding disk for adjusting a depth of the cavity thereby adjusting an amount of a wafer to be lapped and polished. The shims have varying thickness' and are color coated, each color being representative of a predetermined thickness for the shim.

Abstract: An apparatus and a method for etching a plurality of glass panels are disclosed. The apparatus is constructed by mounting a panel holder in an etch tank equipped with a rotating means for rotating the panel holder during the etching process. The panel holder is adapted for receiving a plurality of glass and mounting the panels in a vertical position with at least two edges of the panels mounted in a plurality of tracks for protecting conductive elements formed on the edges of the panels and also for holding the panels securely during the rotation of the panel holder. The method for etching the panels can be carried about at a rotational speed between about 5 rpm and about 60 rpm in an etchant solution of a diluted acid such as HF having a concentration of at least 5 vol. %. A suitable immersing time for the plurality of glass panels in the diluted etchant for producing panels of smaller thicknesses is at least 3 min.

Abstract: An automatic decapsulation system for a device is disclosed. The system comprises an etch plate, an etch head, an acid resistant, high heat endurance and flexible sheet coupled to the etch plate, and a rubber gasket disposed between the sheet and the etch head. The sheet provides a precise etch window and a self-aligning gasket for the device. The rubber gasket creates a tight seal between the device, the sheet, and the etch head. A system in accordance with the present invention utilizes an acid resistant, high heat endurance and flexible sheet in combination with a rubber gasket to seal the device for decapsulation and to provide a well-defined etch window. In addition, the sheet being utilized as the gasket is also utilized as the fixture, thereby eliminating the need to align the gasket to the metal fixture utilized in the conventional system.