Abstract: Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Abstract: A processing method of a workpiece in which the workpiece with a plate shape is processed by using a vacuum chamber is provided. In the processing method of a workpiece, a negative pressure is caused to act on a holding surface from a suction path, and suction holding of the workpiece is executed by a chuck table. Then, the gas pressure in the vacuum chamber is reduced to at least 50 Pa and at most 5000 Pa. Then, while the suction holding of the workpiece is executed, an inert gas in a plasma state is supplied to the workpiece, and voltages are applied to electrodes disposed in the chuck table to execute electrostatic adhesion of the workpiece by the chuck table. Then, a processing gas in a plasma state is supplied, and dry etching of the workpiece is executed.

Abstract: In embodiments, a process gas supply provides a carrier gas and one or more process gases to a distribution manifold. A back pressure sensor senses back pressure in the distribution manifold and provides a signal to the first controller based at least in part on the back pressure. The first controller determines a back pressure set point based at least in part on the signal. One or more mass flow controllers control the flow of the gas mixture comprising the carrier gas and the one or more process gases into one or more zones of the process chamber. An upstream pressure controller fluidly and operatively connected to the distribution manifold controls flow of the carrier gas based on the back pressure set point.

Abstract: A processing tool for a plasma process includes a chamber body that has an interior space that provides a plasma chamber and that has a ceiling and an opening on a side opposite the ceiling, a workpiece support to hold a workpiece such that at least a portion of a front surface of the workpiece faces the opening, an actuator to generate relative motion between the chamber body and the workpiece support such that the opening moves laterally across the workpiece, a gas distributor to deliver a processing gas to the plasma chamber, an electrode assembly comprising a plurality of coplanar filaments extending laterally through the plasma chamber between the workpiece support and the ceiling, each of the plurality of filaments including a conductor, and a first RF power source to supply a first RF power to the conductors of the electrode assembly to form a plasma.

Abstract: The objective of the present disclosure is to provide a method of expanding the sheath and bulk of plasma using dual high frequencies, in which the sheath and bulk of microwave-generated plasma are expanded. The method of expanding the sheath and bulk of plasma using dual high frequencies according to one embodiment of the present disclosure includes: a generation step of generating plasma by a microwave plasma generator; and an expansion step of expanding the sheath and bulk of the plasma by applying a radio-frequency (RF) bias to a radio-frequency electrode disposed at a predetermined distance from the microwave plasma generator.

Abstract: According to a method of controlling uniformity of plasma, a first RF driving pulse signal including first RF pulses is generated by pulsing a first RF signal having a first frequency, and a second RF driving pulse signal including second RF pulses is generated by pulsing a second RF signal having a second, lower frequency. The first and second RF driving signals are applied to a top electrode and/or a bottom electrode of a plasma chamber. A harmonic control signal including harmonic control pulses is generated based on timing of the first and second RF pulses. A harmonic component of the first and second RF driving pulse signals is reduced via intermittent activation and deactivation of a harmonic control circuit as controlled by the harmonic control signal. The uniformity of plasma is improved through the control based on timings of the RF driving pulses.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: A reaction chamber is provided. The reaction chamber includes a chamber body, a dielectric window, and a power supplier. The dielectric window is provided on top of the chamber body along a first direction and hermetically connected with the chamber body. Each coil of a plurality of sets of coils is wound around an outer surface of the dielectric window at an interval along the first direction. The plurality of sets of coils are connected in parallel, with first ends electrically coupled to the power supplier for supplying power to each set of the plurality of sets of coils, and with second ends grounded. The second ends of the plurality of sets of coils are arranged in proximity between the first ends.

Abstract: An optomechanical system including a guide structure, to guide a light beam; and two waveguide segments. Each guide structure include beams that together form two combs partially nested one in the other. At least one beam is free to move in translation along an axis orthogonal to the long axis of the guide structure. A displacement into an optical phase shift, while limiting additional effects on the intensity.

Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

Abstract: A plasma source is provided that includes multiple metallic blocks. A toroidal plasma chamber and a transformer are substantially embedded in the metallic blocks. The toroidal plasma chamber includes a gas inlet configured to receive a process gas and a gas outlet configured to expel at least a portion of the process gas from the plasma chamber. The plasma chamber also includes multiple linear channel segments, multiple joints, an inlet joint, and an outlet joint machined into the metallic blocks. Each of the inlet joint, the outlet joint, and the joints connects a pair of the linear channel segments. The linear channel segments, the joints, the inlet joint and the outlet joint in combination form the toroidal plasma chamber. The gas inlet is disposed on the inlet joint. The gas outlet is disposed on the outlet joint. An inner angle of each of the joints is greater than about 90 degrees.

Abstract: Methods and gas flow control assemblies configured to deliver gas to process chamber zones in desired flow ratios. In some embodiments, assemblies include one or more MFCs and a back pressure controller (BPC). Assemblies includes a controller, a process gas supply, a distribution manifold, a pressure sensor coupled to the distribution manifold and configured to sense back pressure of the distribution manifold, a process chamber, a one or more mass flow controllers connected between the distribution manifold and process chamber to control gas flow there between, and a back pressure controller provided in fluid parallel relationship to the one or more mass flow controllers, wherein precise flow ratio control is achieved. Alternate embodiments include an upstream pressure controller configured to control flow of carrier gas to control back pressure. Further methods and assemblies for controlling zonal gas flow ratios are described, as are other aspects.

Abstract: There is provided a plasma processing apparatus which includes a plasma generating antenna equipped with a shower plate and configured to supply a first gas and a second gas into a processing vessel. The apparatus includes a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes a plurality of first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. Each of the first gas supply holes is disposed inward of the outer surface of the drooping member. Each of the second gas supply holes is disposed outward of the outer surface of the drooping member. An orifice portion is formed in the through-hole.

Abstract: A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen with a negatively biased DC signal to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen with a positively biased DC signal to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurs after the first processing time interval.

Abstract: An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Abstract: A photon-assisted plasma processing method for processing a substrate with a process layer is provided. A process gas is flowed into the chamber. The process gas is formed into a plasma. The process layer is exposed to the plasma. The process layer is illuminated with a light with a wavelength of between 200 nm and 1 micron, while exposing the substrate to the plasma.

Abstract: A sensor system (100) includes a reader (150) with a sensor unit (155, 156) and an accommodation Space (151) for an exchangeable cartridge (110). The cartridge (110) is held in the accommodation space (151) by at least one contact element (111) which has an increased thermal resistance and/or a contact area of reduced size. Thus a more homogenous temperature distribution can be achieved within the cartridge (110), reducing distortions which might adversely affect optical measurements.

Abstract: An apparatus for generating extreme ultraviolet light used with a laser apparatus and connected to an external device so as to supply the extreme ultraviolet light thereto includes a chamber provided with at least one inlet through which a laser beam is introduced into the chamber; a target supply unit provided on the chamber configured to supply a target material to a predetermined region inside the chamber; a discharge pump connected to the chamber; at least one optical element provided inside the chamber; an etching gas introduction unit provided on the chamber through which an etching gas passes; and at least one temperature control mechanism for controlling a temperature of the at least one optical element.

Abstract: The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid (12), wherein the container is disposed in a vacuum chamber. When the ionic liquid (12) is accommodated in the container, at least a portion of the transmission mechanism is provided at a position submerged in the ionic liquid (12).

Abstract: A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.

Abstract: Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma generating region by a semi-barrier structure. The method includes generating a primary plasma from a primary feed gas in the primary plasma generating region. The method also includes generating a secondary plasma from a secondary feed gas in the secondary plasma generating region to enable at least some species from the secondary plasma to migrate into the primary plasma generating region. The method additionally includes etching the substrate with the primary plasma after the primary plasma has been augmented with migrated species from the secondary plasma.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. Plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate. Plasma generated from a second gas supplied from a second supplying unit by the second source is used for treating an edge area of the substrate. A gas separation member prevents plasmas generated respectively from first and second gases from being mixed up.

Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

Abstract: The present invention relates to an apparatus (10) for plasma processing an article (12), the apparatus comprising: a chamber (14) for receiving an article to be processed; electrode means (16) for generating an electric field in said chamber for establishing a plasma in said chamber so that said article can be processed; generation means (24) for generating alternating electrical energy for transmission to said electrode means (18); connection means for connecting said generation means to said electrode means (20); and control means for varying the location of nodes and anti-nodes of standing waves generated in said chamber during processing, so that a plurality of standing waves are generated over time which are not coincident with one another.

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

Abstract: The present invention relates to a multiple-mode plasma generation apparatus that can supply plasma for multiple processes in order to improve processing efficiency. The plasma generation apparatus may include a first plasma generation unit and a second plasma generation unit connected in series with the first plasma generation unit. Here, a gas is changed to plasma by a magnetic field generated by the first plasma generation unit and the second plasma generation unit, the first plasma generation unit is operated by a low-frequency power supply, and the second plasma generation unit is operated by a high-frequency power supply.

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

Abstract: A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.

Abstract: A wafer etching apparatus and a wafer etching method using the wafer etching apparatus, which are capable of etching Si wafer in a dry etching method, are disclosed. According to the wafer etching apparatus and the wafer etching method, the capacitively coupled plasma unit or the inductively coupled plasma unit and the remote plasma unit are included together to etch wafer in a high speed and to reduce etching operation time. Additionally, the chuck has an upper surface with roughness so that the wafer can be cooled down through a helium gas provided to the wafer through a minute space between the upper surface and the wafer. Therefore, unwanted plasma which is generated in the groove in the conventional wafer etching apparatus is prevented to prevent damage of the wafer.

Abstract: The invention relates to a method of cleaning the surface of a material that is coated with an organic substance. The inventive method is characterized in that it comprises the following steps, consisting in: introducing the material into a treatment chamber, having a pressure of between 10 mbar and 1 bar therein, which is supplied with a gas stream containing at least 90 volume percent of oxygen; and generating a plasma by passing an electric discharge between the surface of the material and a dielectric-covered electrode in order to break down the organic substance under the action of the free radicals O thus produces. The invention also relates to an installation that is used to carry out said method.

Abstract: An inductively coupled plasma processing apparatus includes a chamber configured to provide a space for processing a substrate and including a window formed in an upper portion thereof, a substrate stage configured to support the substrate within the chamber and including a lower electrode, the lower electrode configured to receive a first radio frequency signal, an upper electrode arranged on the upper portion of the chamber with the window interposed between the upper electrode and the space for processing the substrate, the upper electrode configured to receive a second radio frequency signal, a conductive shield member arranged within the chamber and configured to cover the window, and a shield power supply configured to apply a shield signal to the shield member in synchronization with the second radio frequency signal.

Abstract: Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.

Abstract: Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Abstract: A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

Abstract: Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: In one aspect, operating a vacuum plasma process system including a plasma discharge chamber is accomplished by generating a main plasma in the discharge chamber in a first operating state, and generating an auxiliary plasma in the discharge chamber in a second operating state. Generating the main plasma includes generating a main plasma power with a first number of RF power generators, and generating an auxiliary plasma power with a second number of RF power generators, such that the second number is smaller than the first number.

Abstract: A method of tuning the uniformity of a plasma with a large sheath potential by locally affecting the density of a plasma is provided. The method comprises illuminating a body exposed to the plasma with electromagnetic radiation from a source, wherein the body and the source are cooperatively configured such that the body will generate photoelectrons upon exposure to the radiation from the source. An example of such electromagnetic radiation is vacuum ultraviolet light, and an example of such a body is the edge ring surrounding a semiconductor substrate. Photoelectrons emitted from the edge ring, captured by the plasma, and accelerated into the plasma with sufficient energy to cause ionization, locally increase plasma density. The source of radiation can be a plurality of discrete sources or one or more extended sources.

Abstract: Provided is an ion exchange resin volume reduction apparatus in which the ignition of plasma is facilitated and the plasma is prevented from extinguishing. A volume reduction apparatus according to aspects of the present invention includes a stage carrying thereon a resin to be treated, a CCP power source, and an ICP power source. The volume reduction apparatus according to a certain aspect of the present invention is provided with a supply mechanism, and the CCP power source continues operating when the resin to be treated is supplied in a depressurized state to a vacuum vessel. In the volume reduction apparatus according to a certain aspect of the present invention, the CCP power source continues operating when a gas condition under which gas is supplied into the vacuum vessel is changed.

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract: A hybrid plasma processing system and methods for manufacturing and operating same are disclosed. The hybrid plasma processing system includes an RF-powered lower electrode for supporting the substrate during processing and a hybrid upper electrode disposed in a spaced-apart relationship above the lower electrode. The hybrid upper electrode may be thermally controlled and includes a first plate formed of a first material having a first electrical resistivity, a conductive grounded plate having therein a plurality of radial slots and disposed above the first plate. The conductive plate is formed of a second material having a second electrical resistivity different from the first electrical resistivity. The hybrid upper electrode also includes an RF-powered inductive coil disposed above the conductive ground plate.

Abstract: In some embodiments, the present disclosure relates to a plasma etching system having direct and localized plasma sources in communication with a processing chamber. The direct plasma is operated to provide a direct plasma to the processing chamber for etching a semiconductor workpiece. The direct plasma has a high potential, formed by applying a large bias voltage to the workpiece. After etching is completed the bias voltage and direct plasma source are turned off. The localized plasma source is then operated to provide a low potential, localized plasma to a position within the processing chamber that is spatially separated from the workpiece. The spatial separation results in formation of a diffused plasma having a zero/low potential that is in contact with the workpiece. The zero/low potential of the diffused plasma allows for reactive ashing to be performed, while mitigating workpiece damage resulting from ion bombardment caused by positive plasma potentials.

Abstract: An apparatus configured to provide simultaneous plasma and electromagnetic irradiation of a workpiece within the same process chamber, thereby providing processes that permit simultaneous plasma and electromagnetic irradiation within the same atmosphere as may be desired for some applications.

Abstract: Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second RF power source; a third RF power source; a fourth RF power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth RF power source.

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume, first, second and third RF coils disposed proximate the process chamber to couple RF energy into the processing volume, wherein the second RF coil disposed coaxially with respect to the first RF coil, and wherein the third RF coil disposed coaxially with respect to the first and second RF coils, at least one ferrite shield disposed proximate to at least one of the first, second or third RF coils, wherein the ferrite shield is configured to locally guide a magnetic field produced by an RF current flow through the first, second or third RF coils toward the process chamber, wherein the plasma processing apparatus is configured to control a phase of each RF current flow through each of the of the first, second or third RF coils.

Abstract: A plasma reactor has a main chamber for processing a workpiece in a processing region bounded between an overhead ceiling and a workpiece support surface, the reactor having an overhead electron beam source that produces an electron beam flowing into the processing region through the ceiling of the main chamber.