Abstract: A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber.

Abstract: A vacuum plate for a fabricating apparatus of a semiconductor device, the vacuum plate includes: a first vacuum panel having a plurality of exhaust holes, the plurality of exhaust holes having same area and same distance from a center of the first vacuum panel, the plurality of exhaust holes being symmetrical and spaced apart from each other; and a second vacuum panel having a sidewall, a pumping hole and an air-load block, the sidewall being vertically protruded along an edge of the second vacuum panel, the air-load block being vertically protruded and symmetrical, a bottom surface of the first vacuum panel contacting a top surface of the sidewall and a top surface of the air-load block, thereby the first and second vacuum panels being combined.

Abstract: A plasma photoresist hardening technique is provided to improve the etch resistance of a photoresist mask 26. The technique involves the formation of a thin passivation layer 26b on the photoresist mask 26 which substantially slows down the etching rate of the photoresist material 26a. Advantageously, this technique allows preservation of critical dimension features such as via hole openings and transmission lines. The technique hardens the surface of the photoresist film 26 by both chemically and physically bonding halogenated hydrocarbons with cross linked photoresist polymer. This results in a passivation layer 26b which is highly resistant to harsh plasma etch environments.