Abstract: A sensing amplifier comprising a clamp circuit is provided. The clamp circuit is coupled between a first node and a second node. The clamp circuit comprises a first P-type transistor having a first terminal, a second terminal and a control terminal receiving a first bias signal, the first terminal and the second terminal of the first P-type transistor are coupled to the first node and the second node, respectively, and a sensing current from the memory cell flows into the second node via the first node during a sensing time period.