Abstract: A cage for a roller bearing comprises a base body with a plurality of pockets for the reception of the roller elements of the roller bearing. At least a part of the surface of the base body is coated with a layer consisting of or containing fullerene-like carbon nitride (FL-CNx), wherein an inter-layer of chromium (Cr) or aluminum (Al) or molybdenum (Mo) or titanium (Ti) or tungsten (W) or a diamond-like coating (DLC) or a metal-mix diamond-like coating (Me-DLC) is arranged between the surfaces of the base body and the layer consisting of or containing fullerene-like carbon nitride.

Abstract: A barrier film having a substrate, a base polymer layer applied to the substrate, an oxide layer applied to the base polymer layer, and a top coat polymer layer applied to the oxide layer. An optional inorganic layer can be applied over the top coat polymer layer. The top coat polymer includes a silane and an acrylate co-deposited to form the top coat layer. The use of a silane co-deposited with an acrylate to form the top coat layer of the barrier films provide for enhanced resistance to moisture and improved peel strength adhesion of the top coat layer to the underlying barrier stack layers.

Abstract: A hydrogen storage system using a coiled nano-foil hydride and methods for forming the hydrogen absorbing nano-foil coil without backing materials. Intercalation of hydrogen in metal hydrides allows for large amounts of hydrogen to be stored at atmospheric temperatures and pressures. Nano-films provide a large surface area for storage of hydrogen. Excessive heating of the system is avoided by use of a modified magnetron source, and the deposition rate is increased by employing stronger magnetic fields. The foil formed is capable of storage and of mechanical self-support without breakage and expansion up to 20% of its initial volume.

Abstract: A reactive sputtering method for application of a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a bias sputtering method; wherein a supporting substrate conveyor unit and a cathode that includes a target facing the supporting substrate conveyor unit are provided; the supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a film of a metal compound on the supporting substrate; magnets are provided adjacent to the supporting substrate conveyor unit on a side thereof opposite to that of the supporting substrate, such that a magnetic field is closed and a continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic po

Abstract: Provided is a method for preparing a one-dimensional spin photonic crystal device and a one-dimensional spin photonic crystal device prepared by the same. The method comprises forming magnetic and nonmagnetic regions by the interference of laser beams generated from a femtosecond laser light source. The method of the present invention enables production of one-dimensional spin photonic crystals having excellent properties by a rapid and simple process, and is therefore suitable for high integration and large-scale production of desired devices. Further, the prepared photonic crystals exhibit excellent magneto-optical effects and are therefore applicable to development of novel optical devices, and the like.

Abstract: A method of manufacturing a film antenna includes: preparing a carrier film formed of an insulation polymer material; forming an antenna radiator on at least one side of the carrier film by one of sputtering and deposition; inserting the carrier film with the antenna radiator formed thereon into a mold having a shape of a mobile communication terminal case; and forming a mobile communication terminal case integrally formed with the carrier film by injecting a molding material into the mold.

Abstract: Generally, the present disclosure relates to barrier assemblies that have a reduced transmission of water vapor, and processes for making the barrier assemblies. The barrier assemblies include a substrate and an inorganic layer disposed adjacent the substrate. The inorganic layer has a composition that changes throughout the thickness of the inorganic layer. The composition includes at least a first and a second inorganic material, and the relative proportion of the first and second inorganic material in the composition changes throughout the thickness of the inorganic layer. A process for making the barrier assemblies includes dual AC sputtering of pairs of targets having different elemental compositions.

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: Disclosed is a method for depositing a film onto a substrate, with a sputter deposition process wherein the sputter deposition process is a direct current sputter deposition wherein the film consists of at least 90 wt-% of an inorganic material having semiconductor properties whereby the film of the inorganic material M2 is directly deposited as crystalline structure, so that at least 50 wt-% of the deposited film has a crystalline structure wherein the source material (target) used for the sputter deposition consists of at least 80 wt-% of the inorganic material M2. wherein the inorganic material is selected from a group including binary, ternary, and quaternary compounds including sulphur, selenium, tellurium, indium, and/or germanium.

Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.

Abstract: A method for producing a flexible circuit board material having a polymer substrate and a copper layer. The method includes depositing a layer of titanium oxide to be between the polymer substrate and the copper layer. The layer of titanium oxide and the copper layer are deposited using vacuum methods.

Abstract: The invention concerns a process for the production of a region-wise metallization on a carrier substrate, wherein the carrier substrate is at least region-wise provided with a soluble colored first layer which on its side remote from the carrier substrate is provided over its full area with a metal layer, as well as a transfer film with a region-wise metalization and the use thereof.

Abstract: Provided is a method of producing a two-layered copper-clad laminate with improved folding endurance, wherein the two-layered copper-clad laminate retains folding endurance of 150 times or more measured with a folding endurance test based on JIS C6471 by subjecting the laminate in which a copper layer is formed on a polyimide film through sputtering and plate processing to heat treatment at a temperature of 100° C. or more but not exceeding 175° C. Specifically, provided are a method of producing a two-layered copper-clad laminate (two-layered CCL material) in which a copper layer is formed on a polyimide film through sputtering and plate processing, wherein the rupture of the outer lead part of a circuit can be prevented due to the improvement in folding endurance; and a two-layered copper-clad laminate obtained from the foregoing method.

Abstract: A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.

Abstract: A two-stage manufacturing process for preparation of an ITO layer includes having first a transparent substrate, e.g., a glass or plastic substrate going through treatment without preheating; the substrate is then sputtering processed in a sputtering chamber under process conditions without heating up to form a amorphous state ITO film on the surface of the transparent substrate; followed with a thermal treatment at a preset temperature to turn the ITO layer into a crystalline state without compromising strength of the glass or the plastic substrate while delivering a durable ITO layer and a structure of ITO layer provided with a specific sheet resistance and/or thickness. The ITO layer produced using the present invention particularly fits to be applied in a touch screen structure.

Abstract: The invention relates to a transparent barrier film, comprising a transparent thermoplastic film and at least one permeation barrier layer, wherein the permeation barrier layer comprises a chemical compound of the elements zinc, tin and oxygen, and the mass fraction of zinc is 5% to 70%. Furthermore, the invention relates to a method for the production of a barrier film of this type.

Abstract: A method for producing a plurality of thin film actuators is disclosed. The method includes depositing a film of a shape memory alloy material onto a polyimide film to form a shape memory alloy construction. The shape memory alloy construction is strained from 2 to 8%. Post processing is conducted on the shape memory alloy construction after the step of imparting a 2 to 8% strain. This post processing can be the deposition of additional layers of the slicing of the actuators. Various shape memory metal actuators are disclosed.

Abstract: Method and apparatus for sputter coating an insulated wire with a silicon and metal alloy, to provide the wire with sufficient surface conductivity to protect against build-up of electrostatic charge. A sputtering target of silicon has a metal plate positioned close enough to the sputtering site on the target to permit metal atoms to be dislodged by sputtered silicon, and deposited with the silicon to form an alloy. In the disclosed form of the invention, the wire is insulated with a polyimide material and the metal alloyed with silicon in the sputtered coating is stainless steel.

Abstract: A process for surface treating a plastic substrate is provided. The method includes the steps of providing a plastic substrate; forming a golden-colored vacuum coated layer which is nonconductive on the plastic substrate; and forming a protective coating on the vacuum coated layer. A golden vacuum coated layer which is nonconductive is formed on the plastic substrate by the present process.

Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm?1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter.

Abstract: Disclosed is a bather laminate comprising at least one organic layer and at least one inorganic layer on a surface of the organic layer, wherein the organic layer is formed by curing a polymerizable composition comprising a compound having a triphenylene skeleton and a polymerizable group.

Abstract: A multilayer film including a first layer including a polylactic acid polymer, a second layer of a metal primer, deposited upon one surface of the first polylactic acid polymer layer, and a third metal layer deposited on the second metal primer layer. This metal-primed and metallized polylactic acid film exhibits improved moisture barrier properties versus a non-metal-primed and metallized polylactic acid film and can be used as part of a lamination structure for food packaging applications.

Abstract: Novel effective method of vacuum evaporation and followed deposition of transparent conductive oxides on the polymer basis allows achieve the high technical and operational parameters of ITO film: transparency, conductivity, a high adhesion to a polymer substrate (especially in limiting the temperature of deposition no more than 60° C.), resistance to thermal shock, thermal cycles, humidity, etc. and providing relatively low cost without the use of precious metals. The transparent conductive oxides which are obtained according presented invention is generally characterized by nano structures with the size of nano crystals from 6 nm up to 25 nm. wherein a nano structure is distributed evenly across the surface. The value of transparency of the transparent conductive oxides ITO that were received according presented invention was 92% when the value of surface resistance was 12 ohms/?.

Abstract: The present invention refers to a coating device for depositing of barrier layers on a plastic substrate comprising a first coating station for depositing a first layer comprising a metal and a second coating station for depositing a second layer comprising a resin, wherein a treatment station for treating the deposited first layer is arranged between the first and the second coating stations which comprises sputter means for depositing one or several atomic layers or isles of deposition material. The invention further refers to an appropriate method which can be carried out by the coating device and to a layer system produced thereby.

Abstract: In a method for the coating of a surface of at least one substrate with zinc in which the at least one substrate to be coated is heat treated together with zinc as the coating agent at a temperature between 200 and 500° C., wherein, before the start of the heat treatment in the reaction space in which the substrate to be coated is heat treated, the oxygen content in the atmosphere contained in the reaction space is set to less than/equal to 5 volume percent and the heat treatment is then started in the atmosphere obtained in this manner in the reaction space and the heat treatment is carried out in the reaction space, with no gas being supplied into the reaction space during the heat treatment or with no gas containing oxygen being supplied or with gas being supplied which has been pretreated so that it has an oxygen content of a maximum of 100 ppm.

Abstract: A liquid crystal display panel manufacturing method includes forming at least one thin film on a flexible plastic substrate by sputtering at a temperature of about 80° C. to about 150° C. Sputtering can be in a chamber evacuated to about 1×10?6 Torr to about 9×10?6 Torr. Sputtering targets and films sputtered on substrates include materials that are conductive or insulating, organic or inorganic, metal or metal alloy, reflective metal or transparent conductive, or combinations thereof. Thin film and pattern formation employ photolithography with laminated or liquid films. Films may be sputtered on opposing sides of a substrate and may be multilayered.

Abstract: A method of producing a wired circuit board that can prevent the electrostatic damage of the components mounted on the wired circuit board effectively, while preventing operation errors of the device caused by the static electricity. After a thin metal film is formed over an entire area of a front side of an insulating cover layer and an entire surface of a conductor layer at a terminal portion thereof by sputtering, a metal oxide layer is formed on the thin metal layer by an oxidation-by-heating method or by the sputtering. According to this method, since the semi-conductor layer comprising the thin metal film and the metal oxide layer is formed on the surface of the insulating cover layer, the electrostatic damage of the components mounted on the wired circuit board can be prevented effectively. Also, the operation errors of the device caused by the construction wherein only the thin metal film is formed can also be prevented effectively.

Abstract: Container for the storage and/or transportation of liquids or powders, in particular inflammables, suitable for preventing the formation of electrostatic charge, comprising a tank supported by a pallet, housed in a metallic cage and having an outer surface in contact with said metallic cage. The tank comprises a base layer of plastic material, a layer modified through plasma and a layer of metallic material deposited with vacuum PVD (Physical Vapor Deposition )technique. The metallic layer is in contact with the cage. The metallization of a plastic tank is carried out by generating in a chamber a plasma which activates the outer surface of said tank so as to form a surface layer and carrying out, with vacuum PVD technique, the deposition of a layer of conductive metallic material superposing said surface layer to obtain a tank metallized on the outside.

Abstract: The present invention relates to a process for the deposition of metal nanoparticles by physical vapor deposition at the surface of a substrate which may be heat-sensitive, at a pressure of the order of a few tens of pascals, and to the substrates obtained by implementing this process and to their applications.

Abstract: A vacuum chamber having a TiO2 target and a base therein is first provided wherein a plastic substrate is fixed onto the base. After that, a plasma gas consisting of argon and oxygen is filled into the vacuum chamber. The filling pressure of the plasma gas is in the range of 1˜10 Pa and the flow ratio of argon to oxygen thereof is in the range of 9:1˜7:1. Finally, an anatase TiO2 layer is formed on the plastic substrate by sputtering, wherein the temperature of the plastic substrate is kept between 50˜180 during the sputtering.

Abstract: The invention relates to a method for applying a porous glass layer. It is proposed to apply a porous glass layer by means of a PVD method. Porosity factor and average pore size can be varied by means of the process parameters such as pressure and deposition rate, as well as by deliberate addition of extrinsic substances.

Abstract: A method for fabricating a stent or other medical device by creating a free standing thin film of metal.

Abstract: A heat-resistant light-shading film having high light shading capacity, high heat resistance, high sliding characteristics, low surface gloss and high electroconductivity, and useful for optical device parts such as shutter blades or diaphragm blades for diaphragm blades of lens shutter and the like for digital cameras and digital video cameras and diaphragm blades of light intensity adjusting device for projectors, and a method for producing the same. The heat-resistant light-shading film is a film comprising a resin film substrate (A) having a heat resistance of 155° C. or higher and a light-shading layer (B) of crystalline metal carbide film (MeC) formed on one side or both sides of the resin film substrate (A), characterized in that the light-shading layer (B) has a thickness of 100 nm or more and a surface roughness of 0.1 to 2.1 ?m (arithmetic average height Ra), and content of carbon element (C) in the metal carbide film (MeC) is 0.3 or more in atomic number ratio to the total metal elements (Me).

Abstract: A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.

Abstract: A process is provided for the formation of miniaturized getter deposits, comprising the steps of forming a layer of a photosensitive polymeric material on a support; selectively exposing the polymeric layer in order to cause a chemical modification in a portion of the polymeric layer; removing with a first solvent only one of the previously exposed or the not previously exposed portions of the polymeric layer, thus forming cavities in the polymeric layer; forming a thin layer of a getter material by cathodic deposition at the bottom of the cavity and on the residual polymer; and removing with a second solvent the polymer portion not removed by the first solvent, leaving at least a getter material deposit on the support surface.

Abstract: A magnetic recording medium using a plastic substrate as a non-magnetic substrate includes an adhesive layer that prevents film expansion even under severe conditions. The adhesive layer has a chemical affinity to the plastic substrate and is formed on the surface of the plastic substrate, and an underlayer and subsequent layers are formed over the adhesive layer. A polymerized carbon film is used as the adhesive layer.

Abstract: A method of sputtering a metal substance onto at substrate selected from the group consisting of at least one of aluminum and magnalium alloy, includes the steps of: cleaning a surface of the substrate by tap water and R.O. water; coating a base coat on the surface of the substrate; coating a media coat over the base coat, wherein the media coat includes a mixture of poly-butadiene resin, alkyd, and toluene; sputtering the metal substance over the media coat by Physical Vapor Deposition (PVD) process to form a metal layer on the media coat, wherein the metal substance is selected from the group consisting of aluminum and copper; and coating a top coat over the metal layer.

Abstract: A method for forming photoelectric conversion substrate is provided. First, a conductive substrate is fixed onto a base in a vacuum chamber having a TiO2 target therein. After that, the vacuum chamber is heated so that the temperature therein is kept between 70˜100° C. Then, a plasma gas consisting of argon and oxygen is filled into the vacuum chamber. The filling pressure of the plasma gas is in the range of 1˜10 Pa and the flow ratio of argon to oxygen thereof is in the range of 9:1˜7:1. Finally, an anatase TiO2 layer is formed on the conductive substrate by sputtering. A method for manufacturing a dye-sensitized solar cell is also disclosed in the specification.

Abstract: The present invention provides adhesiveless copper clad laminates wherein there is formed a copper film layer having high adhesiveness and insulation reliability, and a method for manufacturing such adhesiveless copper clad laminates.

Abstract: A method of manufacturing a thin-film magnetic head, the thin-film magnetic head including a magnetoresistive element, first and second shield layers for shielding the magnetoresistive element, a first shield gap film provided between the magnetoresistive element and the first shield layer, and a second shield gap film provided between the magnetoresistive element and the second shield layer. The method includes the steps of forming the first shield layer, forming the first shield gap film on the first shield layer, forming the magnetoresistive element on the first shield gap film, forming the second shield gap film on the magnetoresistive element, and forming the second shield layer on the second shield gap film. At least one of the first and second shield gap films is formed by stacking a plurality of insulating films formed by chemical vapor deposition.

Abstract: Disclosed is a process for producing a rubber-based composite material, including the steps of forming, by sputtering, an adhesion film on a substrate to be mated with a rubber for constituting the composite material, laminating a rubber composition on the adhesion film, and vulcanizing the rubber composition, the sputtering is conducted by using a first target and a second target, composed of different metallic components and provided in a chamber, while moving the substrate in sputtering atmospheres formed by applying electric power simultaneously to the first and second targets.

Abstract: A method for fabricating a stent or other medical device by creating a free standing thin film of metal.

Abstract: O2 and H2O barrier materials suitable for the protection of LCDs and flexible OLEDs are fabricated on a polymer substrate using dense inorganic barrier layers. A polymer surface having a low surface roughness has an inorganic layer of aluminum or silicon oxides deposited thereupon using ion-assisted vacuum deposition with an argon ion gun, which treatment surprisingly provides a smoothing effect on the surface of the polymer. By pretreatment of prefabricated polymeric film with ion-gun enhanced plasma in the presence of oxygen, commercially available heat-stabilized PET and PEN films can be directly employed as substrates. Protective polymer layers are optionally coated upon the thin inorganic barrier layer.

Abstract: A synthetic resin molded material characterized in that a thin film made of an oxide of at least one metal selected from the group consisting of Si, Zr, Ti, Ta, Hf, Mo, W. Nb, Sn, In, Al and Zn, is formed by a dry method on a synthetic resin substrate having hydrophobicity, and a method for its production.

Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.

Abstract: According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.

Abstract: According to the invention semiconductor processing procedures can be applied to silicone elastomeric materials. The surface tension of the elastomeric material is changed by depositing a thin layer of silicon, silicon nitride, silicon dioxide or a combination thereof onto the elastomer's exposed surface. In the illustrated embodiment it is shown that it is possible to deposit a thin layer of silicon dioxide onto the elastomer's exposed surface through re*active sputter deposition of silicon dioxide within an argon-oxygen plasma. In another plasma fabrication procedure, the elastomer material is directionally etched using a standard RF plasma etching system and a dry chemical oxygen-Freon removal procedure, which procedure volatilizes all of the components of the polydimethylsilicone (PDMS) or GE's RTV elastomer material.

Abstract: In order to allow application of any coating under a vacuum over a volatile gelatinous layer, such as polymer dispersed liquid crystal (PDLC) on an optical glass substrate with a transparent electrode, such as indium tin oxide (ITO) on its surface, a layer of an intermediate stress absorbing polymeric material is first applied to cover the volatile gelatinous layer to prevent evaporation and escape of volatiles, thereafter the coating is applied under a very high vacuum using for example a technique called Physical Vapor Deposition (PVD) or sputtering.

Abstract: The coated multilayer structure comprising a polymeric base layer, a zero valent material barrier layer, and a top coat on the zero valent material barrier layer, the top coat comprising a soluble compound capable of reducing the permeability of the multilayer structure to gas or vapor. The zero valent material barrier layer can also enhance barrier to UV light. A method for enhancing the gas or vapor barrier properties or the UV light barrier properties of a multilayer polymeric/inorganic structure is also disclosed. According to one embodiment, Si coated polyethylene terephthalate containers are coated with a gas or vapor barrier enhancing top coat. A method for recycling containers coated with a zero valent material barrier layer is also disclosed.

Abstract: The coated multilayer structure comprising a polymeric base layer, an inorganic oxide gas barrier layer on a surface of the polymeric base layer, and a top coat on the inorganic oxide gas barrier layer, the top coat comprising a soluble compound capable of reducing the permeability of the multilayer structure to gas or vapor. A method for enhancing the gas or vapor barrier properties of a multilayer polymeric/inorganic oxide structure is also disclosed. According to one embodiment, SiOx coated polyethylene terephthalate containers are coated with a gas or vapor barrier enhancing top coat.