Abstract: In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-containing gas. In another aspect, the invention encompasses a method of forming a capacitor. An electrically conductive first layer is formed over a substrate, and a second layer is formed over the first layer. The second layer is a dielectric layer and comprises a complex of metal and oxygen. A conductive third layer is formed over the second layer. The first, second and third layers are patterned into a capacitor construction. The patterning of the second layer comprises exposing the second layer to at least one oxygen-containing gas while also exposing the second layer to physical etching conditions.

Abstract: A method is provided for grading the surface topography of a surface to improve step coverage for an overcoat. In accordance with one aspect of the present invention, an ABS of a slider and sensitive element of a magnetic head is graded to provide better step coverage of an overcoat of ultra-thin DLC film. After lapping the ABS, a thin film is deposited on the lapped surface to cover any scratches, irregularities, and steps. The thin film is sputter etched at a glancing angle to grade the topography of the slider ABS. Sputtering at a glancing angle removes the thin film in planar regions faster than the thin film under the shadow of the glancing angle, which is near surface irregularities. The graded surface is then covered by a DLC deposition.

Abstract: A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of the interdigital transducer and the piezoelectric body simultaneously so as to reduce the thickness of the interdigital transducer and the piezoelectric body.

Abstract: Low resistant vias are formed by sequentially treating an opening in an interlayer dielectric and the exposed surface of a lower metal feature with an NH3 plasma followed by a N2/H2 plasma, thereby removing any oxide on the metal surface and removing residual polymers or polymeric deposits generated during etching to form the opening. Embodiments include forming a dual damascene opening in a low-k interlayer dielectric exposing the upper surface of a lower Cu or Cu alloy feature, sequentially treating the opening and the upper surface of the lower metal feature with an NH3 plasma and then with a N2/H2 plasma, Ar sputter etching, depositing a barrier layer lining the opening, depositing a seedlayer and filling the opening with Cu or a Cu alloy.

Abstract: A recording film is formed on a surface of a substrate, including the slopes, which are positioned on both sides of each information track and have surfaces not parallel to the surfaces of the information tracks. The surface of the substrate is sputter-etched by accelerated ions impinging against the substrate surface in a substantially vertical direction. The recording film on each slope is etched away based on the dependence of a sputtering rate upon an incident angle of the ions, while the recording film remains on the surface of each information track.

Abstract: Methods for etching a trench into a dielectric layer are provided. One exemplary method controls an ion-to-neutral flux ratio during etching so as to achieve a neutral limited regime in an ion assisted etch mechanism where the neutral limited regime causes bottom rounding. The method includes modulating physical sputtering causing microtrenching to offset the bottom rounding so as to produce a substantially flat bottom trench profile. Some notable advantages of the discussed methods of etching a trench into a dielectric layer includes the ability to eliminate the intermediate etch stop layer. Elimination of the etch stop layer will decrease fabrication cost and process time. Additionally, the elimination of the intermediate stop layer will improve device performance.

Abstract: A method of smoothing a surface of a diamond coating of a diamond-coated body, by using an arc-type ion plating device in which at least one target is disposed. The method includes: (a) a step of causing arc discharge between an anode, and a cathode which is provided by each of the above-described at least one target, whereby positive ions are emitted from the above-described at least one target; and (b) a step of applying a negative bias voltage to the diamond-coated body which is disposed in the arc-type ion plating device, whereby the surface of the diamond coating is bombarded with the positive Lions, so as to be smoothed by the bombardment of the positive ions against the surface of the diamond coating.

Abstract: Regardless of the materials used in an artificial joint component design, the present invention applies gas cluster ion beam (GCIB) technology in order to modify the component's surface(s) so as to increase lubrication between contact surfaces, thereby substantially reducing wear debris, osteolysis complications, and accelerated wear failure. The approach of the surface modification comprises an atomic level surface patterning utilizing GCIB to apply a predetermined pattern to the surface(s) of the joint implant to reduce frictional wear at the interface of the surfaces. A reduction in wear debris by GCIB patterning on any surface(s) of a joint prosthesis reduces accelerated failure due to wear and osteolysis and results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.

Abstract: A plasma etch reactor 20 includes a upper electrode 24, a lower electrode 24, a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral electrode 26 is powered by a high frequency AC power supply, while the lower electrode 28 is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber 22 is configured with a solid source 50 of gaseous species and a protruding baffle 40. A nozzle 36 provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer 48. The configuration of the plasma etch reactor 20 enhances the range of densities for the plasma in the reactor 20, which range can be selected by adjusting more of the power supplies 30, 32.

Abstract: A method of manufacturing a thin-film magnetic head, includes a first step of forming a second magnetic pole layer (an upper magnetic pole layer) on a magnetic gap layer formed on a first magnetic pole layer (a lower magnetic pole layer) so that the second magnetic pole layer opposes to the first magnetic pole layer via the magnetic gap layer, and a second step of dry etching a part of an upper surface of the first magnetic pole layer surrounding the second magnetic pole layer used as an etching mask to make a width of the dry-etched part of the first magnetic pole layer equal to a width of the second magnetic pole layer. The first step includes shaping at least part of the second magnetic pole layer so that the width of the second magnetic pole layer increases as a throat height becomes large.

Abstract: A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

Abstract: An irregularly etched metallic medical implant device is provided having random non-uniform relief patterns on the surface ranging from about 0.3 &mgr;m to less than about 20 &mgr;m in depth. The random, irregular surface as defined by the etch micromorphology and respective dimensional properties is sobtained by exposing a surface to a reactive plasma in a chamber wherein said reactive plasma produces a reaction product with the surface to thereby etch the surface, said reaction product or a complex thereof having a vapor pressure lower than a pressure in the chamber; providing a dynamic masking agent during the etching process; and removing the reaction products.

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

Abstract: This invention relates to a multi-layer lithographically fabricated device used to produce improved thin-film recording heads. It further relates to a focused particle beam system for milling a recording head pole-tip assembly without irradiating a sensitive structure, e.g. a read head, of the recording head. The invention precisely forms a pole-tip assembly by milling a second structural element without irradiating a first structural element. The invention avoids irradiating the first structural element by placing a first marker element, which can be imaged and/or damaged, in the same layer of a multi-layer lithographically fabricated device as the first structural element. The marker element has a fixed spatial relationship to the first structural element.

Abstract: A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a chamber and evacuating said chamber; b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; and c) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

Abstract: In a method of producing an information recording medium, any recording film is not substantially formed on the slope portions of a substrate in which slope portions having surfaces non-parallel to the surface of the information track of an information recording medium are provided on the opposite sides of the information track. A recording film of a predetermined film thickness is formed on the information track.

Abstract: A method of repairing defects on a MoSi phase shifting template such as a mask or reticle that includes the steps of directing an ultraviolet light source over region of the template that includes an opaque defect. Clear defects caused by the removal of the opaque defect in the template are then repaired by a focused ion beam (FIB). The template may be exposed to a strongly basic solution to remove ion stains produced by the FIB. According to this method, the defect is removed with high edge placement accuracy and high quality of geometry reconstruction.

Abstract: A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.

Abstract: A plasma processing method using helicon wave excited plasma which makes it possible to control a degree of dissociation for a process gas by controlling the source power. In the plasma processing method using helicon wave excited plasma, the source power applied to the plasma generator is set lower than a source power corresponding to a discontinuous change of a characteristic line indicating the dependency of electron density or saturated ion current density on source power.

Abstract: Cryofilm/organic contaminants are removed from cryogenically cooled surfaces such as spacecraft cryo-telescope mirrors by sputtering and chemical reaction with a low energy plasma having an average ion energy of not more than about 30 eV, and preferably in the approximate range of 5-20 eV. When the reactive plasma's freezing point is higher than the temperature of the surface to be cleaned, the cryofilm and embedded hydrocarbons are first removed with a non-reactive plasma having a freezing point less than the surface temperature, the reactive plasma is then used to remove residual organic contaminants left on the surface by chemical reaction, and finally another inert plasma is applied to remove reactive plasma frozen to the surface; the two inert plasmas are preferably formed from the same gas.

Abstract: A method prepares the top exposed surface of a pinning layer after its sputter deposition for an improved exchange coupling with a sputter deposited pinned layer even though the top surface of the pinning layer has been degraded by exposure to the atmosphere. In a preferred method the relatively thick pinning layer is sputter deposited in a first chamber which has a high sputtering rate and is transferred to a second sputtering chamber where the pinned layer, as well as other layers of a spin valve sensor, are sputter deposited. After transfer to the second sputtering chamber the top surface of the nickel oxide (NiO) pinning layer is sputter etched and a thin layer of nickel oxide (NiO) is sputter deposited thereon followed by sputter deposition of the pinned layer. In a preferred embodiment the thickness of the nickel oxide (NiO) pinning layer portion sputter deposited in the second chamber is approximately 40 Å.

Abstract: A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.

Abstract: A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposition from the sputtered material is reduced. Consequently, gaps with aspect ratios of 6.0:1 and higher can be filled without the formation of voids and without damaging circuit elements.

Abstract: A method of smoothing a surface of a diamond coating of a diamond-coated body, by using an arc-type ion plating device in which at least one target is disposed. The method includes: (a) a step of causing arc discharge between an anode, and a cathode which is provided by each of the above-described at least one target, whereby positive ions are emitted from the above-described at least one target; and (b) a step of applying a negative bias voltage to the diamond-coated body which is disposed in the arc-type ion plating device, whereby the surface of the diamond coating is bombarded with the positive ions, so as to be smoothed by the bombardment of the positive ions against the surface of the diamond coating.

Abstract: In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-containing gas. In another aspect, the invention encompasses a method of forming a capacitor. An electrically conductive first layer is formed over a substrate, and a second layer is formed over the first layer. The second layer is a dielectric layer and comprises a complex of metal and oxygen. A conductive third layer is formed over the second layer. The first, second and third layers are patterned into a capacitor construction. The patterning of the second layer comprises exposing the second layer to at least one oxygen-containing gas while also exposing the second layer to physical etching conditions.

Abstract: The propagation of microfissures from a photoresist to an underlying material layer during lithography and etching can be substantially prevented by placing a hard mask between the photoresist and the material layer to be etched. Specifically, the microfissure propagation is substantially prevented by (a) forming a compressive hard mask on a surface of a non-compressive material layer that is to be patterned by lithography and etching; (b) forming a patterned photoresist on said hard mask, wherein a portion of said hard mask is exposed; (c) removing said exposed portion of said hard mask so as to expose a portion of said non-compressive material layer; and (d) transferring said pattern from said patterned photoresist to said exposed portion of said material layer by etching, wherein said hard mask is selective to said etching and thus substantially prevents the propagation of photoresist microfissures to said material layer.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: A method of manufacturing a semiconductor device having a trench isolation structure includes patterning a mask film on a semiconductor substrate, forming a trench by etching the semiconductor substrate by use of the mask film, filling the trench with an insulating film by repeating depositing the insulating film in the trench and etching the insulating film by sputter etching, removing the mask film, and removing the insulating film by etching a predetermined amount of the insulating film filled in the trench. According to the sputter etching in the step of filling the trench with the insulating film, an edge between a surface of the substrate and an inner wall surface of the trench forms an inclined surface to the surface of the substrate.

Abstract: The use of ion beam processing in preparation of a substrate's surfaces, particularly a polyimide film such as Upilex®-SS, prior to depositing a metal on the substrate surfaces. In one aspect, the ion beam processing can be used to remove relatively unique forms of surface contaminants without requiring additional cleaning by traditional methods such as chemical or plasma cleaning. In another aspect, the ion beam processing utilizing an anode layer ion source can be used to prepare polyimide films prior to metal deposition to produce substrates having surprisingly good peel strengths. In still another aspect, ion beam processing can be used to minimize differences in surface characteristics between opposite sides of a substrate.

Abstract: Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

Abstract: A thin-film magnetic head comprises a reproducing head and a recording head. The reproducing head includes: a GMR element; a bottom shield layer and a top shield layer for shielding the GMR element; a conductive layer connected to the GMR element; and first to fourth shield gap films placed between the shield layers. A plurality of layers making up the GMR element are formed on the first shield gap film. Reactive ion etching is performed to etch a part of the thickness of these layers. Ion milling is then performed to etch the remaining part. The GMR element is thus formed. The second shield gap film is formed around the GMR element on the first shield gap film.

Abstract: Provided are a method of forming a magnetic layer pattern and a method of manufacturing a thin film magnetic head, which can reduce the number of manufacturing steps and thus reduce the manufacturing time. A precursory nonmagnetic layer and a precursory bottom pole layer are formed in this sequence so as to cover a frame pattern formed on an underlayer (a top shield layer) and having an opening. Then, the precursory nonmagnetic layer and the precursory bottom pole layer are patterned by polishing the overall surface by CMP until at least the frame pattern is exposed, and thus a nonmagnetic layer and a bottom pole are selectively formed. The number of manufacturing steps can be reduced and thus the manufacturing time can be reduced, as compared to the case of forming the nonmagnetic layer and the bottom pole without forming the frame pattern.

Abstract: A method of repairing defects on a MoSi phase shifting template such as a mask or reticle that includes the steps of directing an ultraviolet light source over region of the template that includes an opaque defect. Clear defects caused by the removal of the opaque defect in the template are then repaired by a focused ion beam (FIB). The template may be exposed to a strongly basic solution to remove ion stains produced by the FIB. According to this method, the defect is removed with high edge placement accuracy and high quality of geometry reconstruction.

Abstract: A metal alloy solder ball comprising a first metal and a second metal, the first metal having a sputtering yield greater than the second metal. The solder ball comprises a bulk portion having a bulk ratio of the first metal to the second metal, an outer surface, and a surface gradient having a depth and a gradient ratio of the first metal to the second metal that is less than the bulk ratio. The gradient ratio increases along the surface gradient depth from a minimum at the outer surface. The solder ball may be formed by the process of exposing the ball to energized ions of a sputtering gas for an effective amount of time to form the surface gradient.

Abstract: A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.

Abstract: A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising:

Abstract: High temperature superconductor composite thin film devices with easily moved Josephson vortices are described having high Tc and good magnetic vortex properties. A preferred composite material was YBCO/CeO2 thin film on a MgO substrate. The superconductor composites were preferably formed by off-axis co-sputtering. A surprising recovery in properties was seen after plasma etching with oxygen.

Abstract: Process for continuously stripping the surface of a substrate moving in a defined direction through a vacuum chamber past at least one counterelectrode, according to which process a plasma is created in a gas, between this counterelectrode and this surface, so as to generate radicals and/or ions which can act on the surface to be stripped, characterized in that at least one pair of successive counterelectrodes, past which the abovementioned chamber and in that an alternating potential is applied to these counterelectrodes so as to impose on the latter an alternately positive and negative potential with respect to the substrate.

Abstract: A process for altering surface properties of a mass of metal alloy solder comprising a first metal and a second metal. The process comprises exposing the mass to energized ions to preferentially sputter atoms of the first metal to form a surface layer ratio of first metal to second metal atoms that is less than the bulk ratio. The solder may be located on the surface of a substrate, wherein the process may further comprise masking the substrate to shield all but a selected area from the ion beam. The sputtering gas may comprises a reactive gas such as oxygen and the substrate may be an organic substrate. The process may further comprise simultaneously exposing the organic substrate to energized ions of the reactive gas to roughen the organic substrate surface.

Abstract: A movable sheet overlying a wing is disclosed that creates laminar flow over its exposed surface. The movable sheet serves as an integral, retractable shield for protecting a suction support structure of a wing against contamination, and also serves as a movable, conductive substrate for deicing by means of electrical resistance or hot-gas heating. The invention includes a movable sheet that is mounted scroll-like on two motor-driven rollers. The sheet has a solid area without perforations that protects the suction support structure from contamination, and a porous area with perforations therethrough that allows boundary layer suction. The motor-driven rollers scroll the sheet to cover the suction support structure with either the solid area or the perforations of the sheet. Contact rollers at the edge of the sheet supply electrical current to resistively heat the sheet and melt any accumulated ice. The movable sheet can also be moved back and forth to dislodge the ice.

Abstract: A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying a negative voltage to the hollow cathode (38) to produce a plasma and such that the material of the hollow cathode (38) is sputtered onto the metallic article (10) to produce a coating (22). A positive voltage (V1) is applied to the metallic article (10) to attract electrons from the plasma to heat the coating (22) and so inter-diffuse the elements of the metallic article (10) and the protective coating (22) and a negative voltage (V2) is applied to the metallic article (10) to attract ions from the plasma to bombard the coating (22) to minimize defects in the coating (22).

Abstract: An improved apparatus and method for manufacturing semiconductor devices, and, in particular, for depositing material at the bottom of a contact hole, comprises sputtering a material onto a semiconductor substrate; applying a first bias voltage to the substrate, simultaneously removing the material surrounding the contact hole to form a facet at the top of the recess; and applying a second bias voltage to the substrate, simultaneously sputter-depositing the first material onto the bottom of the recess. A further embodiment of the invention utilizes an electrically isolated collimator for the sputtering apparatus. Another embodiment of the invention resputters a first material onto sidewalls of a contact hole during physical vapor deposition.