Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: The invention relates to a current collecting bus-bar comprising electrode housings for accommodating a multiplicity of electrodes in electrical contact therewith. Probes for measuring the electric potential locally established in correspondence of the electrical contacts during the passage of electric current are also connected to the bus-bar. The invention further relates to a permanent monitoring system allowing the continuous evaluation of current distribution on each electrode of electrolysis cells of metal electrowinning or electrorefining plants, connected to an alerting system and to means for disconnecting individual electrodes in case on non-compliance with preset values.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.

Abstract: Methods and devices for improving measurements of test meter, and in particular for detecting a presence of an electrochemical sensor or strip in the test meter and a start time of an electrochemical reaction, are provided. In one exemplary embodiment of an electrochemical system includes an electrochemical sensor , a test meter, and a circuit. The circuit is configured to form an electrical connection with the electrochemical sensor such that the circuit can detect three distinct voltage ranges. The voltage ranges can be indicative of an absence of the electrochemical sensor, a presence of the sensor that is devoid of a sample, and a presence of the sensor with a sample. Test meters, methods for detecting when a sample starts to fill an electrochemical sensor for establishing when a reaction starts, and circuits for use with electrochemical strips, are also provided.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An electroplating apparatus for depositing a conductive material on a semiconductor wafer includes a vessel for holding an electroplating bath, a support for holding a semiconductor wafer within the vessel and beneath a surface of the bath; first and second electrodes within the vessel, between which an electrical current may flow causing conductive material to be electrolytically deposited onto the wafer, a third electrode disposed outside of the bath for applying a static electric charge to the wafer, and an electrical power supply coupled with the third electrode.

Abstract: A gated electrode structure for altering a potential and electric field in an electrolyte near at least one working electrode is disclosed. The gated electrode structure may comprise a gate electrode biased appropriately with respect to a working electrode. Applying an appropriate static or dynamic (time varying) gate potential relative to the working electrode modifies the electric potential and field in an interfacial region between the working electrode and the electrolyte, and increases electron emission to and from states in the electrolyte, thereby facilitating an electrochemical, electrolytic or electrosynthetic reaction and reducing electrode overvoltage/overpotential.

Abstract: A method and a device for electrochemically machining workpiece having blade end plates at the longitudinal both ends of a blade-shaped portion having aerofoil shape in cross section by extending and retracting divided electrodes. A part of the blade-shaped portion and one blade end plate continued therewith are electrochemically machined by advancing the main electrode in an acute angle direction relative to the longitudinal direction of the blade-shaped portion. At the same time or subsequently, the remaining part of the blade-shaped portion and the other blade end plate continued therewith are electrochemically machined by slidably advancing an auxiliary electrode along the slope of the main electrode forming an acute angle relative to the blade-shaped-portion-machining-surface. Thus, the number of the parts of an electrode unit can be reduced and the structure thereof can be simplified.

Abstract: A method for measuring an iodine adsorption number of carbon black includes: (a) electrochemically reducing an unknown amount of iodine adsorbed by a predetermined amount of a carbon black sample; (b) measuring the electrical charge used for reducing the unknown amount of the iodine adsorbed by the carbon black sample; and (c) obtaining the iodine adsorption number from the measured electrical charge. An electrolytic cell and a kit for measuring an iodine adsorption number of carbon black are also disclosed.

Abstract: A method and apparatus for local polishing and deposition control in a process cell is generally provided. In one embodiment, an apparatus for electrochemically processing a substrate is provided that selectively polishes discrete conductive portions of a substrate by controlling an electrical bias profile across a processing area, thereby controlling processing rates between two or more conductive portions of the substrate.

Abstract: A patterning method includes supplying an imprint material made of a dielectric in an uncured state onto a workpiece, producing a potential difference between the workpiece and a conductive pattern portion of a template opposed to the workpiece to induce dielectric polarization in the imprint material before curing the imprint material, bringing the pattern portion into contact with the imprint material in the uncured state, curing the imprint material with the pattern portion brought into contact with the imprint material, and stripping the template from the imprint material after curing the imprint material.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: A photoelectrocatalytic method for detecting current that illuminates a photoelectrochemical electrode to generate a photocurrent and to magnify the current. Thereby, accuracy of the detection is increased. A photoelectrochemical detector used in the method has a base (10), a cover (20) pivotally mounted on the base (10) and a locking device attached between the base (10) and the cover (20). The base (10) has a top and a recess (12) defined in the top to accommodate a working electrode (50) with a photoelectrochemical inner lead (52). A spacer is clamped between the base (10) and the cover (20) to form a space over the inner lead (52). Multiple channels and a light hole (22) are defined through the cover (20) to communicate with the space. Therefore, the inner lead is illuminated through the light hole (22) to perform the photoelectrochemical method.

Abstract: A flow injection electrochemical detecting device has a base (10), a cover pivotally mounted on the base (10), and a locking device attached between the base (10) and the cover (20). The base (10) has a recess (12) defined in a top to accommodate a working electrode inside the recess (12). An annular trench (28) in a bottom partially receives an O-ring (282) serving as a separator to form a space between the base (10) and the cover (20). Multiple channels are defined through the cover (20) to communicate with the space. Therefore, a flow injection electrochemical detecting device is achieved. By pivotally attaching the cover (20) on the base (10) and using the locking device, the detecting device is easily opened or closed to change the working electrode (50) in a convenient way.

Abstract: The present invention relates to a control loop to be used in a system for stripping a coating from a part. The control loop comprises an electrometer for measuring a potential between the part and a reference electrode and generating a voltage output signal, an operational amplifier for comparing the voltage output signal to a set point voltage and for producing an output signal to be used to reduce the difference between the voltage output signal and the set point voltage, and a high current power transistors for supplying a current to the part.

Abstract: A cathode current control system employing a current thief for use in electroplating a wafer is set forth. The current thief comprises a plurality of conductive segments disposed to substantially surround a peripheral region of the wafer. A first plurality of resistance devices are used, each associated with a respective one of the plurality of conductive segments. The resistance devices are used to regulate current through the respective conductive finger during electroplating of the wafer. Various constructions are used for the current thief and further conductive elements, such as fingers, may also be employed in the system. As with the conductive segments, current through the fingers may also be individually controlled. In accordance with one embodiment of the overall system, selection of the resistance of each respective resistance devices is automatically controlled in accordance with predetermined programming.

Abstract: A method of electroplating an object to be plated attached to a lower portion of a plating bath constituted by draining used plating solution and supplying new plating solution at every plating procedure. The method has a step of supplying additional current so that the object to be plated always has cathode potential, while the object to be plated is being dipped in the plating bath and electroplating is not carried out.

Abstract: A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformnity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate.