Abstract: A composite plating film is prepared from a composite plating solution containing a metal matrix and insoluble particles 4 dispersed therein or deposited therewith. The composite plating film has a non-uniform concentration of insoluble particles along a direction of the thickness of the composite film. The non-uniform concentration is achieved by changing the discharge rate of composite plating solution during deposition of the film on the base material.
Abstract: Embodiments of the present invention provide a new method for producing a three dimensional object, particularly suited to microfabrication applications. The method includes the steps of providing a substrate with a conducting interface, an electrode having a feature or features that are small relative to the substrate, and a solution. The solution has a reactant that will either etch the substrate or deposit a selected material in an electrochemical reaction. The electrode feature is placed close to but spaced from the interface. A current is passed between the electrode and the interface, through the solution, inducing a localized electrochemical reaction at the interface, resulting in either the deposition of material or the etching of the substrate. Relatively moving the electrode and the substrate along a selected trajectory, including motion normal to the interface, enables the fabrication of a three dimensional object.
Type:
Grant
Filed:
May 15, 1995
Date of Patent:
June 24, 1997
Inventors:
Ian W. Hunter, Serge R. Lafontaine, John D. Madden
Abstract: The present invention is directed to a process of a method for the full metallization of thru-holes in a polymer structure comprising the steps of applying a film-forming amount of a conductive polymer-metal composite paste to a metal cathode; bonding a patterned polymer structure to said paste; subjecting said polymer structure to an electrolytic plating bath for a time sufficient to fully metallize thru-hole surfaces in said patterned polymer structure and removing the structure from the cathode assembly. The fully metallized thru-hole polymer structure can then be cleaned and polished to produce a finished product.
Type:
Grant
Filed:
July 1, 1994
Date of Patent:
August 13, 1996
Assignee:
International Business Machines Corporation
Inventors:
Richard B. Booth, Emanuel I. Cooper, Edward A. Giess, Mark R. Kordus, Sol Krongelb, Steven P. Ostrander, Judith M. Roldan, Carlos J. Sambucetti, Ravi Saraf
Abstract: A precision high rate electroplating cell comprising a rotating anode/jet assembly (RAJA) immersed in the electrolyte and having high pressure electrolyte jets aimed at the substrate (cathode). The high pressure jets facilitate efficient turbulent agitation at the substrate's surface, even when it consists of complex shapes or mask patterns. High aspect ratio areas receive similar degree of agitation (and replenishment) as areas of lower aspect ratios. As a result, thickness and composition micro-uniformities are substantially improved while utilizing significantly higher current densities and plating rates.
Abstract: A device is provided for brush electroplating a surface of a workpiece. The device includes an anode generally composed of a metal to be electroplated on the surface of the workpiece. The anode is selectively retained within a cavity formed in a lower surface of a carrier piece composed of a generally electrical non-conductive material. The lower surface of the carrier piece is shaped to conform to at least a portion of the surface of the workpiece. An absorbent material extends over the lower surface of the carrier piece to form a brush. The cover material and lower surface of the anode are spaced from each other to form a chamber. The device also includes an assembly, fluidly connected to the space between the anode and absorbent material, to inject a flow of the electrolytic fluid into the chamber.
Abstract: A semiconductor product plating apparatus includes housings having a first mask portion for masking both the surfaces of a resin package of a semiconductor device and a second mask portion for masking the peripheral portion of a lead frame, when clamping a semiconductor product from both surface sides of the lead frame, and hollow portions surrounding outer leads between the semiconductor device and the peripheral portion of the lead frame. Electrolytic solution supply slits and electrolytic solution drainage slits are formed in the housings so as to communicate with the hollow portions. The apparatus also includes electrodes formed on portions of the inner wall surfaces of the hollow portions. The first mask portion has a tapered side surface which widens toward the end. The electrolytic solution supply slits have opening portions formed in a direction to cross the proximal end portions of the outer leads and communicating with the side surface of the first mask portion.
Abstract: Apparatus for selective electrolytic deposition of a metal such as a noble metal such as gold onto the inside surface of bush type hollow bodies such as connector contact members comprising at least one system comprising substantially coaxial injector nozzle and suction nozzle. The suction nozzle has a diameter greater than that of the injector nozzle. Each bush to be plated is positioned facing a system so that the bush, the injector nozzle and the suction nozzle are in alignment, so that the injector nozzle does not enter the bush and so that a peripheral gap remains between the bush and the suction nozzle. A liquid electrolyte charged with a salt of the metal to be deposited is injected via the injector nozzles. An electrode is in electrical contact with the liquid electrolyte on the exit side of the injector nozzles. An electric current is passed between the bush and the electrode.
Abstract: An electrically conductive pin and a method of selectively plating an electrically conductive pin. The pin provides gold plated contact regions on two end portions and a center portion plated with another conductive material, which may be tin lead. The method includes selectively masking desired gold plated contact regions with a plating resist material and then plating the center portion with the other conductive material. The plating resist material is preferably an insulator deposited by electrophoresis. The plating resist material is removed, after plating the center portion with the other conductive material, to expose the gold plated contact regions.