Abstract: According to an embodiment of a semiconductor device, the semiconductor device includes a micro-mechanical structure and a semiconductor material arranged over the micro-mechanical structure. A side surface of the semiconductor material includes a first region and a second region. The first region has an undulation, and the second region is a peripheral region of the side surface and decreases towards the micro-mechanical structure.

Abstract: An electrolytic cell comprising bipolar electrodes is employed for electrochemical deposition of copper, zinc, lead, nickel or cobalt. An interior space is provided between the cathode side and the anode side of a bipolar electrode. The electrolyte can flow substantially without an obstruction through the interelectrode space between adjacent electrodes. The current densities in the interelectrode space amount to 800 to 8000 A/m.sup.2. Gas is evolved on the anode side of the bipolar electrodes and causes liquid to flow along the anode side. In the middle of the height of the anode side that liquid flow has a vertical component having a velocity of 5 to 100 cm/second. Electrolyte solution flows from the upper edge portion of the anode side to a return flow space, in which the solution flows downwardly. From the return flow space the solution is returned to the lower portion of the interelectrode space.