Abstract: A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M1, an element M2, optionally an element M3, and an element Z, and have an average particle size of 50 nm or less. The element M1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te.

Abstract: A method for electrochemical plating includes providing a wafer for an electrochemical plating (ECP) process, determining a wafer electrical property affecting the ECP process, adjusting a plating current or voltage applied in the ECP process based on the determined wafer electrical property, and electroplating the wafer with the adjusted plating current or voltage. A controller for controlling a power supply, and a system for electrochemical plating are also disclosed.

Abstract: A method for forming a trivalent chromium coating on an aluminum alloy substrate includes adding a chromium-containing solution to a vessel, immersing the aluminum alloy substrate in the chromium-containing solution, immersing a counter electrode in the chromium-containing solution, and applying an electrical potential bias to the aluminum alloy substrate with respect to its equilibrium potential to form a trivalent chromium coating on an outer surface of the aluminum alloy substrate. A method for forming a trivalent chromium coating on a metal substrate includes adding a chromium-containing solution to a vessel, immersing the metal substrate in the chromium-containing solution, immersing a counter electrode in the chromium-containing solution, and modulating an electrical potential difference between the metal substrate and the counter electrode to form a trivalent chromium coating on an outer surface of the metal substrate.

Abstract: An electrochemical deposition system is described. The electrochemical deposition system includes one or more electrochemical deposition modules arranged on a common platform for depositing one or more metals on a substrate, and a chemical management system coupled to the one or more electrochemical deposition modules. The chemical management system is configured to supply at least one of the one or more electrochemical deposition modules with one or more metal constituents for depositing the one or more metals. The chemical management system can include at least one metal enrichment cell and at least one metal-concentrate generator cell.

Abstract: A measurement tool includes a rotation stage supporting an workpiece support, a thickness sensor overlying a workpiece support surface; a translation actuator coupled to the thickness sensor for translation of the thickness sensor relative to the workpiece support surface; and a computer coupled to control the rotation actuator and the translation actuator, and coupled to receive an output of the thickness sensor.

Abstract: An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources.

Abstract: The present disclosure provides, among other things, scale-coated surfaces, vessels with controlled deposits of scale, and associated methods for enhanced boiling heat transfer. It is presently found that creating and/or maintaining a scale deposit at a controlled thickness actually enhances a type of boiling called nucleate boiling, which improves heat transfer.

Abstract: A method for producing a conductive polymer film using an apparatus comprising a prism having a working electrode, a light-emitting means, a light probe disposed on both sides of the prism, a container having an electrolytic solution containing a conductive-polymer-forming monomer and a dopant, a counter electrode immersed in the electrolytic solution, a power supply connected to a working electrode and the counter electrode, and a controller connected to the light probe and the power supply means. The method comprises determining an absorption spectrum from light reflected by the conductive polymer film, storing the relation between the absorbance of the conductive polymer film obtained from the absorption spectrum and a parameter of the conductive polymer film in the controller, and controlling current supply to the electrodes based on the relation of the absorbance and the parameter to obtain a desired parameter.

Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

Abstract: A device suitable for the electrochemical processing of an object is at least provided with a chamber that is to accommodate an electrolyte, a support for the object that is to be processed in the chamber, at least one set of electrodes located in the chamber such that during operation at least one electrode is located opposite each portion of a surface of said object that is to be processed. The device also includes a controller configured to provide an electric current between the object that is to be processed and the electrodes.

Abstract: In an electroplating process, electric current is applied to two or more electrodes, with the current varying over time according to a multi-variable function. The multi-variable current function is integrated over time, for each electrode, to determine a net plating charge delivered. A plating profile of a plated-on layer of material is compared to a target plating profile. Deviations between the actual plating profile and the target plating profile are identified and used to determine new net plating charges for each electrode. One or more variables of the multi-variable function is changed to provide as new multi-variable function. The new net plating charges are distributed according to the new multi-variable current function, and are used to electroplate a layer of material on a second substrate.

Abstract: Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack of multiple precursor layers comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450° C. and 700° C.

Abstract: Systems and methods for electrodepositing a nickel-cobalt alloy using a rotating cylinder electrode assembly with a plating surface and an electrical contact. The assembly is placed within a plating bath and rotated while running a plating cycle. Nickel-cobalt alloy deposition is selectively controlled by controlling current density distribution and/or cobalt content in the plating bath while running the plating cycle to deposit an alloy of a desired yield strength onto the plating surface in a single plating cycle. In various embodiments, the rotating cylinder may be used as an insitu monitoring method to assist in obtaining the properties desired.

Abstract: Arranged in a bath contained in a tank are respectively an anodic electrode and a cathodic electrode, which are connected to an electric current generator. The cathodic electrode can be composed of a plurality of individual test specimens suitable for being immersed in the metal bath, and the device additionally includes a controllable electric power supply unit for the individual cathodic test specimens, which is connected to the current generator and includes a mechanism for controlling the current passing through the cathodic test specimens so that a given current flows in each of them.

Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Abstract: Some embodiments of the present invention provide processes and apparatus for electrochemically fabricating multilayer structures (e.g. mesoscale or microscale structures) with improved endpoint detection and parallelism maintenance for materials (e.g. layers) that are planarized during the electrochemical fabrication process. Some methods involve the use of a fixture during planarization that ensures that planarized planes of material are parallel to other deposited planes within a given tolerance. Some methods involve the use of an endpoint detection fixture that ensures precise heights of deposited materials relative to an initial surface of a substrate, relative to a first deposited layer, or relative to some other layer formed during the fabrication process. In some embodiments planarization may occur via lapping while other embodiments may use a diamond fly cutting machine.

Abstract: Nanofluidic passages such as nanochannels and nanopores are closed or opened in a controlled manner through the use of a feedback system. An oxide layer is grown or removed within a passage in the presence of an electrolyte until the passage reaches selected dimensions or is closed. The change in dimensions of the nanofluidic passage is measured during fabrication. The ionic current level through the passage can be used to determine passage dimensions. Fluid flow through an array of fluidic elements can be controlled by selective oxidation of fluidic passages between elements.

Abstract: The invention is directed to an assembly for electroplating comprising an electroplating bath and non-conductive plates. The invention is also directed to an assembly for electroplating comprising an electroplating bath, elements with electrically adjustable resistance, and ampere-hour meters. The invention is further directed to methods for monitoring, controlling and adjusting the thickness distribution of an electroplated material on an object. The object can be of any shape as long as it can electrically charged.

Abstract: Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

Abstract: A method of manufacturing a semiconductor device includes measuring the reflectance at the surface of a semiconductor substrate provided with concave portions and deciding a deposition parameter that represents a deposition condition corresponding to the measured reflectance. Then, a metal film is formed on the semiconductor substrate under a condition corresponding to the deposition parameter.

Abstract: An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via.

Abstract: An apparatus for continuously forming thin ceramic coatings on metal sheets, foils or wires. The apparatus having a reaction chamber, perforated nylon sheets, nylon bar guides, copper rods attached to a power supply, nylon collecting rods, and an inlet and an outlet. The reaction chamber is capable of containing an electrolytic solution. The copper rods are separately connected to the R, Y, or B phase of the power supply. Each phase is provided with two thyristors and the output of the thyristors is connected to the copper rods using current transformers. A process for continuously forming thin ceramic coatings on metal sheets, foils or wires is also provided.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450 C and 700 C.

Abstract: An apparatus and method for preventing the peeling of electroplated metal from a wafer, is disclosed. The apparatus includes a seed layer detector system having a light source and a reflectivity detector. According to the method, the light source emits a beam of light onto a wafer and the reflectivity detector receives the light reflected from the wafer. The reflectivity of the wafer surface is measured to determine the presence or absence of a seed layer on the wafer, as well as whether the seed layer has a minimum thickness for optimum electroplating of a metal onto the seed layer.

Abstract: An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

Abstract: A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.

Abstract: Apparatus and method for electrolytic coating of a mould, the internal surfaces of which demarcate a mould cavity, with a coating material for the purpose of achieving or re-achieving intended mould cavity dimensions. The mould, as the cathode, and an anode positioned in the mould cavity and an electrolyte containing the coating material are used. The electrolyte serving as the carrier of the coating material flows through the mould cavity in a controlled manner. During the electrolytic coating, only the internal surfaces of the mould cavity come into contact with the electrolyte and the external surfaces of the s mould therefore do not have to be covered. The mechanical properties can be kept largely uniform over the entire region. The coating can be achieved more rapidly than with the conventional processes.

Abstract: An anodizing system for forming a anodized coating on at least a portion of a substrate thereby creating an anodized substrate is disclosed. The anodizing system includes a bath, a coating thickness monitor, at least one probe and at least one controller. The coating thickness monitor includes at least one radiation source directed at at least a portion of the anodized substrate; at least one probe for capturing at least a portion of the radiation reflected and refracted by the anodized coating on the anodized substrate, the captured radiation being at least a portion of the radiation directed the anodized substrate from the radiation source; and at least one detector in communication with the at least one probe, the at least one detector capable of processing the captured radiation to allow a determination of at least the thickness.

Abstract: An electro chemical deposition system is described for forming a feature on a semiconductor wafer. The electro chemical deposition is performed by powering electrodes that includes a cathode, an anode and a plurality of electrically independent auxiliary electrodes.

Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: Provided is a gas molecule sensor, characterized in that the sensing element is a polycrystalline tin oxide film having a thickness less than 1 ?m. The sensing element is produced by electrolytic deposit of a tin film on an insulating support in an electromechanical cell, where the anode is comprised of tin and the cathode is a conductive film applied on the surface of the insulating support at one of its ends, the two electrodes being separated by an electrolyte comprised of a tin salt solution, and by passing a constant current through said cell. The deposit step is followed by an oxidizing step.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.

Abstract: A method and apparatus for the manipulation of colloidal particulates and biomolecules at the interface between an insulating electrode such as silicon oxide and an electrolyte solution. Light-controlled electrokinetic assembly of particles near surfaces relies on the combination of three functional elements: the AC electric field-induced assembly of planar aggregates; the patterning of the electrolyte/silicon oxide/silicon interface to exert spatial control over the assembly process; and the real-time control of the assembly process via external illumination. The present invention provides a set of fundamental operations enabling interactive control over the creation and placement of planar arrays of several types of particles and biomolecules and the manipulation of array shape and size. The present invention enables sample preparation and handling for diagnostic assays and biochemical analysis in an array format, and the functional integration of these operations.

Abstract: A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a numerical of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the numerical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.

Abstract: A method and apparatus for the manipulation of colloidal particulates and biomolecules at the interface between an insulating electrode such as silicon oxide and an electrolyte solution. Light-controlled electrokinetic assembly of particles near surfaces relies on the combination of three functional elements: the AC electric field-induced assembly of planar aggregates; the patterning of the electrolyte/silicon oxide/silicon interface to exert spatial control over the assembly process; and the real-time control of the assembly process via external illumination. The present invention provides a set of fundamental operations enabling interactive control over the creation and placement of planar arrays of several types of particles and biomolecules and the manipulation of array shape and size. The present invention enables sample preparation and handling for diagnostic assays and biochemical analysis in an array format, and the functional integration of these operations.

Abstract: An improved electrode and method for manufacturing the improved electrode wherein the electrode having a fractal surface coating of platinum [which the present inventor refers to as “platinum gray”] with a increase in surface area of at least 5 times when compared to shiny platinum of the same geometry and also having improved resistance to physical stress when compared to platinum black having the same surface area. The process of electroplating the surface coating of platinum gray comprising plating at a moderate rate, i.e., at a rate that is faster than the rate necessary to produce shiny platinum and that is less than the rate necessary to produce platinum black.

Abstract: A method of controlling a conductive layer deposition process includes depositing a conductive layer onto a semiconductor wafer based upon a deposition recipe, measuring a thickness of the conductive layer deposited on the semiconductor wafer, determining whether the measured thickness of the conductive layer is within a predetermined tolerance, and revising the deposition recipe if the thickness of the conductive layer is not within the predetermined tolerance.

Abstract: The object of the present invention is to provide a film thickness distribution analysis method that ensures quick and effective prediction of film thickness distribution by computer simulation in the pattern plating process. On the circuit pattern of a printed circuit board, in the method for analyzing the thickness distribution of metal film plated selectively, hypothetically dividing the printed circuit board into one or more regions, introducing pattern density ?j=Aj/Sj (Sj: the area Sj of a desired region j, and Aj: the area of the plated surface inside the area j), and calculating the approximate average current density or film thickness distribution based on “approximation averaged by pattern density”.

Abstract: Electroplating station S has a head 1 with anode 2, to one side of which there is located an electrically neutral wall 3. The width of anode 2 is provided to accommodate the width of web 6. Serrations 9 are provided on the anode 2, especially in the area of top surface 8. A passageway 4 for electrolyte 5 is between anode 2 and wall 3. Mesh 11 is located at a throat section 12 of passageway 4 shortly before the start of the guide 7. In addition, mesh 13 is located further upstream in passageway 4 as an alternative and/or as an addition to mesh 11. Guide 7 of wall 3, serrations 9, and meshes 11 and 13 enhance and maximize the production of stream-wise vortices. These vortices cause a substantial increase in the ion flow, which overcomes boundary layers and results in additional deposition of copper onto the web 6.

Abstract: A cathode potential is applied to a conductive layer formed on a substrate having a depression pattern. A plating solution in electrical contact with an anode is supplied to the conductive layer to form a plating film on the conductive layer. At this time, the plating solution is supplied by causing an impregnated member containing the plating solution to face the conductive layer. Since the plating solution stays in the depression, a larger amount of plating solution is supplied than on the upper surface of the substrate, and the plating rate of the plating film in the depression increases. Consequently, the plating film can be preferentially formed in the depression such as a groove or hole.

Abstract: An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition.

Abstract: The invention relates to the analysis of the performance and properties of electrochemical processes, and specifically, to electrolytic solutions and electrode processes. The invention discloses a device and a method for obtaining qualitative and quantitative information for the kinetics of the electrode reactions, the transport processes, the thermodynamic properties of the electrochemical processes taking place in the cell. When a deposition reaction takes place, the device provides also valuable information about the relationship between the current density and deposit properties including but not limited to the deposit color, luster, and other aspects of its appearance. The device disclosed herein typically is comprised of a multiplicity of cathodic or anodic regions where one or more electrochemical reactions take place simultaneously, but at a different rate.

Abstract: The present invention provides method of adjusting a thickness profile of a top metal layer of a workpiece using a processing solution. A thickness profile control member is included that has at least first and second regions that will allow for processing at respective first and second rates that are different from each other. When processing the workpiece, the processing system establishes relative lateral movement between the workpiece and the thickness profile control member so that a certain portion of the workpiece is disposed in locations that correspond to the first and second regions at different points in time during the processing. In a preferred aspect, the lateral movement is controlled as a result of data obtained from sensors relating to the thickness of a removed or deposited layer.

Abstract: A method and associated apparatus for electro-chemically depositing a metal film on a substrate having a metal seed layer. The apparatus comprises a substrate holder that holds the substrate. The electrolyte cell receives the substrate in a processing position. The actuator is connected to the substrate holder and adjustably positions the substrate relative to the electrolyte cell. The method involves electro-chemically depositing a metal film on a substrate having a metal seed layer comprising disposing the substrate in an electrolyte cell that is configured to receive the substrate. The method comprises adjustably positioning the substrate relative to the electrolyte cell.

Abstract: A method for determining a quantity of each of alloy phases in the plating layer includes subjecting each alloy phase in the plating layer to constant potential electrolysis in each of a plurality of ranges of potentials obtained on the basis of the immersion potential of each alloy phase and the immersion potential of a basis metal, by using a plated metal material having different kinds of alloy phases in the plating layer as the anode, to determine the quantity of each alloy phase in the plating layer on the basis of the quantity of electricity consumed in each range of the potentials during the electrolysis.

Abstract: A method for controlling the chemical composition of an electroplating bath solution used to plate a plurality of substrates by providing the electroplating bath solution to a small-volume plating cell configured to minimize additive breakdown, and discarding the electroplating bath after a predetermined bath lifetime. The method includes predetermining a lifetime of an electroplating bath solution having a desired chemical composition, combining a plurality of electroplating bath solution components thereby forming the electroplating bath solution having the desired chemical composition, filling a small-volume plating cell with the electroplating bath solution, plating a plurality of substrates in the electroplating bath solution until the bath lifetime is reached; and discarding the electroplating bath solution after the bath lifetime is reached.