Etching Patents (Class 219/121.4)
Methods (Class 219/121.41)
Rate control (Class 219/121.42)
With chamber (Class 219/121.43)
  • Aluminum nitride-based sintered bodies, corrosion-resistant members, metal-buried articles and semiconductor-holding apparatuses
    Patent number: 6239402
    Abstract: An aluminum nitride-based sintered body is disclosed, which includes aluminum nitride as a main ingredient and magnesium and has a polycrystalline structure composed of aluminum nitride crystals.
    Type: Grant
    Filed: July 21, 1999
    Date of Patent: May 29, 2001
    Assignee: NGK Insulators, Ltd.
    Inventors: Kiyoshi Araki, Yuji Katsuda, Sadanori Shimura, Tsuneaki Ohashi
  • Plasma reactor with coil antenna of plural helical conductors with equally spaced ends
    Publication number: 20010001201
    Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.
    Type: Application
    Filed: December 20, 2000
    Publication date: May 17, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato
  • Plasma reactor with coil antenna of concentrically spiral conductors with ends in common regions
    Publication number: 20010000898
    Abstract: The invention is embodied in an antenna for radiating RF power supplied by an RF source into a vacuum chamber, the antenna including plural concentrically spiral conductors, each having a first end located in a first common region and a second end located in a second common region, and each being wound about a common axis passing through both regions, the regions being concentric with the axis, the conductors being substantially the same length, substantially the same shape, and substantially evenly spaced with respect to each other about the common axis.
    Type: Application
    Filed: December 20, 2000
    Publication date: May 10, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato
  • Plasma reactor with antenna of coil conductors of concentric helices offset along the axis of symmetry
    Publication number: 20010000604
    Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber, the coil antenna including plural helical conductors each having a first end and a second end, the first ends being adapted for connection to a first common RF potential, the second ends being adapted for connection to a second common RF potential, each of the plural conductors being wound about a common axis of helical symmetry, each of the second ends being spaced substantially equally from the axis and from each other.
    Type: Application
    Filed: December 20, 2000
    Publication date: May 3, 2001
    Applicant: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato
  • Atmospheric pressure inductive plasma apparatus
    Patent number: 6218640
    Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
    Type: Grant
    Filed: July 19, 1999
    Date of Patent: April 17, 2001
    Assignee: TimeDomain CVD, Inc.
    Inventor: Simon I. Selitser