Abstract: The present disclosure provides a semiconductor packaging method and a semiconductor package device. The semiconductor packaging method includes providing a chip, where the chip includes a chip substrate having a front surface and a back surface, where the front surface includes a photosensitive region; soldering pads disposed at the front surface of the chip substrate surrounding the photosensitive region; a metal part formed on a side of each soldering pad facing away from the chip substrate; and a transparent protective layer formed on the front surface of the chip substrate, where a first end of the metal part is exposed by protruding over a surface of the transparent protective layer. The method further includes electrically connecting the first end of the metal part to a circuit board using a conductive connection part, such that the chip is electrically connected to the circuit board.

Abstract: A photoelectric conversion apparatus includes a photodiode, a generation circuit, a first control circuit, and a second control circuit. The photodiode is configured to perform avalanche multiplication. The generation circuit is configured to generate a control signal. The first control circuit is configured to be controlled by the control signal to be in a standby state where the avalanche multiplication by the photodiode is possible and in a recharging state for returning the photodiode having performed the avalanche multiplication to the standby state. The second control circuit is configured to count a number of periods in which the avalanche multiplication has occurred among a plurality of periods of the standby state by using the control signal and a signal corresponding to an output of the photodiode.

Abstract: A sensor and a sensing system includes a chain of sensors, wherein each sensor comprises an input control port, an output control port, a power interface and an output interface, and is configured such that, when the sensor is powered over the power interface, an enable signal at the input control port triggers the sensor for executing a sequence which comprises measuring a physical property, and subsequently transmitting an enable signal over the output control port. The output control port of an earlier sensor is connected with the input control port of a next sensor. A first sensor is configured for repeating the sequence with a predefined period.

Abstract: Disclosed is an image sensing device including a plurality of selectors suitable for generating a plurality of selected pixel signals corresponding to one of a plurality of pixel signals; a plurality of signal converters suitable for: setting a plurality of initial voltages which are different from one another, on the basis of a plurality of initialization signals during an initialization period, and generating a plurality of converted pixel signals to which the plurality of initial voltages are respectively reflected, on the basis of the plurality of selected pixel signals and a ramp signal during a readout period; and a calculation circuit suitable for averaging the plurality of converted pixel signals.

Abstract: According to an aspect of the present disclosure, a display device includes a substrate including a display area and a non-display area, an organic light emitting diode disposed on the substrate, an encapsulation layer disposed on the organic light emitting diode, a touch sensing unit disposed on the encapsulation layer in the display area, a plurality of touch pads disposed in the non-display area, a plurality of touch link lines disposed in the non-display area and each electrically connecting the touch sensing unit and any one of the plurality of touch pads, and an electrostatic discharge circuit disposed in the non-display area and connected to the plurality of touch link lines. In this case, since the electrostatic discharge circuit is connected to the plurality of touch link lines, static electricity accumulated in the touch sensing unit is easily discharged to the outside, thereby suppressing electrostatic defects.

Abstract: Transistor structures for a transistor may include a first source-drain region, a second source-drain region, and a channel region between the first and second source-drain regions overlapped by a gate structure. Transistor structures may be formed in a well of a first doping type. Isolation structures having the first doping type may be formed within the well. A lightly doped implant region of a second doping type for each of the source-drain regions may be formed within the well and separated from the isolation structures. A heavily doped surface implant region of the first doping type may extend across the surface of the well and cover the lightly doped implant region of each source-drain region. The surface implant region may be formed by patterning or by a blanket implantation process across the transistor structures.

Abstract: A light emitting display apparatus can include a substrate including a display area, and a non-display area outside of the display area; a power supply wiring part disposed in the non-display area; a first power supply wiring disposed in the power supply wiring part; a second power supply wiring disposed on the first power supply wiring; and a third power supply wiring electrically connected to the second power supply wiring.

Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. An nth reset scan signal of the plurality of reset scan signals is started behind an nth readout scan signal of the plurality of readout scan signals in time domain.

Abstract: A photoelectric conversion apparatus includes a pixel, an amplifier circuit, a voltage output circuit, and a setting circuit. The setting circuit sets the signal level of a predetermined signal used to acquire a correction value in accordance with an amplification factor set by an amplifier circuit.

Abstract: A method of manufacturing a radiation detector includes: forming a substrate in which a flexible base material is provided via a peeling layer on a support body and plural pixels that accumulate electric charges generated in response to light converted from radiation are provided in a pixel region of the base material; forming a conversion layer for converting the radiation into light on a surface of the base material; providing a first reinforcing substrate on a surface of the conversion layer opposite to a surface on the substrate side; peeling the substrate provided with the conversion layer and the first reinforcing substrate from the support body; providing a second reinforcing substrate on a surface of the substrate peeled from the support body; and peeling the first reinforcing substrate from the substrate provided with the conversion layer after providing the second reinforcing substrate.

Abstract: An integrated optical sensor is formed by a pinned photodiode. A semiconductor substrate includes a first semiconductor region having a first type of conductivity located between a second semiconductor region having a second type of conductivity opposite to the first type one and a third semiconductor region having the second type of conductivity. The third semiconductor region is thicker, less doped and located deeper in the substrate than the second semiconductor region. The third semiconductor region includes both silicon and germanium. In one implementation, the germanium within the third semiconductor region has at least one concentration gradient. In another implementation, the germanium concentration within the third semiconductor region is substantially constant.

Abstract: A method for routing in a quantum network is provided. The method may include receiving parameters including a fidelity with coherence decay time and an entanglement generation rate for each quantum node in a mesh quantum network by a controller, the controller being configured to communicate with each quantum node of a plurality of quantum nodes in the mesh quantum network. Each quantum node includes a quantum memory and a processor. The method may also include analyzing the fidelity with coherence decay time and the entanglement generation rate to yield a determination of a path fidelity with a path coherence decay time and a path entanglement generation rate between at least one pair of quantum nodes. The method may further include, based on the determination, selecting a quantum communication path from a source node to a destination node.

Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.

Abstract: A visible light sensor may be configured to sense environmental characteristics of a space using an image of the space. The visible light sensor may be controlled in one or more modes, including a daylight glare sensor mode, a daylighting sensor mode, a color sensor mode, and/or an occupancy/vacancy sensor mode. In the daylight glare sensor mode, the visible light sensor may be configured to decrease or eliminate glare within a space. In the daylighting sensor mode and the color sensor mode, the visible light sensor may be configured to provide a preferred amount of light and color temperature, respectively, within the space. In the occupancy/vacancy sensor mode, the visible light sensor may be configured to detect an occupancy/vacancy condition within the space and adjust one or more control devices according to the occupation or vacancy of the space. The visible light sensor may be configured to protect the privacy of users within the space via software, a removable module, and/or a special sensor.

Abstract: Disclosed is a system for generating EUV radiation in which current flowing through target material in the orifice 320 of a nozzle in a droplet generator is controlled by providing alternate lower impedance paths for the current and/or by limiting a high frequency component of a drive signal applied to the droplet generator.

Abstract: A display panel and an electronic device are disclosed. The display panel includes a display area and a functional area. The functional area includes a first switch transistor, a second switch transistor, a sensing transistor, and a sensing capacitor. Specifically, an upper plate of the sensing capacitor is a transparent plate. The functional area can also serve a displaying function while performing color temperature sensing, gas sensing, or laser sensing, which increases an aperture ratio and transmittance of the display panel, so that an overall visual effect of the display panel is improved.

Abstract: A capacitive sensor includes a sensing electrode, a first electrode pad, a substrate, and a second electrode pad. The sensing electrode outputs a signal corresponding to a capacitance between the sensing electrode and a detection target. The first electrode pad is coupled to the sensing electrode. The substrate includes a substrate surface portion and a step portion. On the substrate surface portion are the sensing electrode and the first electrode pad mounted. The step portion is provided at a position in the substrate lower than the substrate surface portion. The second electrode pad is mounted on the step portion and coupled to an external line.

Abstract: A light source assembly includes a plurality of cells and a driving circuit. Each of the cells includes a transistor and a light source. The transistor includes a drain region that serves as a cathode of the light source. The driving circuit is configured to drive the cell. An optical sensor cell and a method for manufacturing thereof are also disclosed.

Abstract: Light signals are converted into first electric signals by a first group of light-receiving elements, and the light signals are additionally converted into second electrical signals by a second group of light-receiving elements. The second group has a lower degree of sensitivity for converting the photons into an electric current than the first group. The first electric signals are used to ascertain the distance to an object by means of a time-correlated photon counting process depending on a starting time for the emission of the light signals. Furthermore, the second electric signals are used to determine the distance depending on the starting time but using a second signal processing different from the process used for the first electric signals.

Abstract: An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

Abstract: The present disclosure discloses a flexible substrate, a method of manufacturing the same, and a display device. The flexible substrate includes a plurality of substrate structure layers that are superimposed, and at least one of the plurality of substrate structure layers includes an organic layer, an inorganic layer and a photonic crystal layer that are superimposed.

Abstract: An imaging system includes a light sensor, a pulse detection imaging (PDI) circuit, and an image processing unit. The light sensor generates one or both of an image signal and a pulse signal. The pulse PDI circuit includes a first terminal in signal communication with the light sensor to receive one or both of the image signal and the pulse signal and a second terminal in signal communication with a voltage source. The image processing unit is in signal communication with the PDI circuit to receive one or both of the image signal and the pulse signal and to simultaneously perform imagery and pulse detection based on the image signal and the pulse signal, respectively.

Abstract: Some implementations described herein provide techniques and apparatuses for an extreme ultraviolet (EUV) radiation source that includes a backsplash-prevention system to reduce, minimize, and/or prevent the formation of tin (Sn) build-up in a tunnel structure of a collector flow ring that might otherwise be caused by the accumulation of Sn satellites. This reduces backsplash of Sn onto a collector of the EUV radiation source, increases the operational life of the collector (e.g., by increasing the time duration between cleaning and/or replacement of the collector), reduces downtime of the EUV radiation source, and/or enables the performance of the EUV radiation source to be sustained for longer time durations (e.g., by reducing, minimizing, and/or preventing the rate of Sn contamination of the collector), among other examples.

Abstract: A PIN device includes: a first doped layer, a second doped layer, and an intrinsic layer between the first doped layer and the second doped layer, where the second doped layer includes a body portion and an electric field isolating portion at least partially enclosing the body portion; and the electric field isolating portion is doped differently from the body portion.

Abstract: System and method for current control. As an example, the system for current control includes: a transistor including a drain terminal, a gate terminal, and a source terminal, the drain terminal being coupled to one or more light emitting diodes; a resistor coupled to the source terminal of the transistor and configured to generate a resistor voltage related to a current flowing through the one or more emitting diodes; a voltage detector configured to receiver a first input voltage related to a second input voltage received by the one or more light emitting diodes; and a voltage controller coupled to the voltage detector, the resistor, and the gate terminal of the transistor; wherein the voltage detector is further configured to: detect the first input voltage; and generate a control signal based at least in part on the first input voltage.

Abstract: A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Abstract: Systems and methods for providing invisible sensor aperture for electronic devices. In one embodiment, an example device may have a display that includes a cover layer, a first layer disposed on the cover layer, the first layer having a substantially white ink that is translucent, a second layer disposed on the first layer, the second layer having the substantially white ink, a third layer disposed on the second layer, the third layer having the substantially white ink, and a fourth layer comprising a dark-colored ink, wherein the fourth layer includes a first aperture aligned with a sensor of the device located beneath the fourth layer.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.

Abstract: The present application discloses a display panel, a driving method and a display device. The display panel includes: a substrate, where the substrate is provided thereon with a plurality of data lines, a plurality of gate lines, and a plurality of pixels; each row of pixels includes a plurality of pixel groups, and each pixel group includes a first column of pixels and a second column of pixels; and a timing control chip configured to control the turn-on time of gate activating signals of the first column of pixels and the second column of pixels. The turn-on time of the gate activating signal of the first column of pixels is greater than the turn-on time of the gate activating signal of the corresponding second column of pixels.

Abstract: An imaging module includes: a substrate on which an imaging element is mounted and in which a through-hole is formed; a holding section that has a support pin inserted into the through-hole in such a manner that the support pin penetrates the through-hole and that holds an optical system forming a subject image on the imaging element; and an adhesive that is provided in the through-hole and that fixes the substrate to the support pin, and at least a tip end portion of the support pin has a tapered shape from a root side of the support pin toward a tip end of the support pin.

Abstract: A photoelectric conversion apparatus includes a pulse shaping circuit that shapes an output from a diode of avalanche amplification type into a pulse, and a pulse conversion circuit that converts a pulse signal output from the pulse shaping circuit. The pulse conversion circuit converts a pulse signal having a first amplitude and output from the pulse shaping circuit into a pulse signal having a second amplitude smaller than the first amplitude.

Abstract: A solid-state imaging device includes a first substrate including a first semiconductor substrate and a first multi-layered wiring layer stacked on the first semiconductor substrate, a second substrate including a second semiconductor substrate and a second multi-layered wiring layer stacked on the second semiconductor substrate, a third substrate including a third semiconductor substrate and a third multi-layered wiring layer stacked on the third semiconductor substrate, and a first coupling structure for electrically coupling the first substrate and the second substrate. The first substrate, the second substrate, and the third substrate are stacked in this order. The first substrate and the second substrate are bonded together such that the first multi-layered wiring layer and the second multi-layered wiring layer are opposed to each other. The first substrate excludes a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Abstract: A single photon avalanche diode based range detecting apparatus includes a reference array of single photon avalanche diodes configured to receive light from an illumination source via an internally coupled path. A return array of single photon avalanche diodes is configured to receive light from the illumination source via an external free space path. A calibration pulse generator is configured to generate a calibration signal pulse. Readout circuitry is configured to receive an output of the reference array via a reference signal path, an output of the return array via a return signal path, and an output of the calibration pulse generator via a calibration signal path. The readout circuitry is configured to determine a delay difference value between the reference signal path and the return signal path based on the output of the calibration pulse generator via the calibration signal path.

Abstract: A dynamic vision sensor including a dynamic vision sensor pixel array including an active region and an optical black region, the active region configured to output a plurality of first signals corresponding to a plurality of first events indicating a change in an intensity of light, the optical black region configured to output a plurality of second signals corresponding to a plurality of second events not indicating the change in the intensity of light, and processing circuitry configured to, generate a plurality of event signals based on the plurality of first signals, generate a plurality of noise signals based on the plurality of second signals, calculate a value representing real events among the plurality of first events based on the plurality of event signals and the plurality of noise signals, and selectively output the plurality of event signals based on the value representing real events and a threshold value.

Abstract: Techniques and architectures for simultaneous readout and integration of image data from pixels while increasing their sensitivity and reducing required data rates for moving information off of the chip using pixels configured to conduct Analog-to-Digital Conversions (ADCs) of image data, wherein each pixel operates in a rolling Integrate While Read (IWR) mode using SRAM in place of traditional latches for in-pixel storage.

Abstract: One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

Abstract: An image pickup element using an APD is provided. The image pickup element has a first substrate, a second substrate, and a connector. The first substrate is provided with a plurality of light receivers having the APD. The second substrate has a pixel circuit that corresponds to each of the APDs. Additionally, the connector electrically connects the APD and the pixel circuit corresponding to the APD.

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Abstract: A light detection system is provided for association with a light source. The light detection system includes a light detector and circuitry. The light detector includes semiconductor film and phototube devices and is disposed with at least one line-of-sight (LOS) to the light source. The circuitry is coupled to the light detector and the light detector and the circuitry are configured to cooperatively identify a presence and a characteristic of a light emission event at the light source.

Abstract: A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.

Abstract: An apparatus and method for recording a scene using two lighting setups in alternation so as to concurrently record motion picture footage of the scene for each lighting setup, the footage for the two lighting setups having minimized motion offset. The apparatus includes: a plurality of light sources, a controller to define two lighting setups using the plurality of light sources, and to actuate the lighting setups in alternation, a camera to capture a sequence of frames showing the scene illuminated by one of the two lighting setups in alternation, and optionally a processing module to process the sequence of frames to generate two clips of footage of the scene, each corresponding to a lighting setup. The timing of actuation of the lighting setups relative to the frame boundaries avoids the need to use optical flow algorithms to remove motion artifacts, and the need for a specialized high speed camera.

Abstract: A camera module includes a support base, an optical filter and a lens assembly. The lens assembly is installed on the support base. The support base includes a plastic platform and a metal frame. The metal frame is bonded to the plastic platform. The optical filter is sandwiched between the plastic platform and the metal frame. The present invention further involves a mobile terminal. The support base is formed by bonding the plastic platform to the metal frame and bonding the optical filter between the plastic platform and the metal frame. The metal frame embedded in the plastic platform can greatly increase the strength of the support base, and besides, the optical filter is fixedly sandwiched between the plastic platform and the metal frame without needing to further fix the optical filter by using adhesives, preventing the optical filter from becoming dirty in the process of fixing.

Abstract: A semiconductor substrate includes first and second main surfaces opposing each other. The semiconductor substrate includes second semiconductor regions in a side of the second main surface. Each of the second semiconductor regions includes a first region including a textured surface, and a second region where a bump electrode is disposed. The second semiconductor regions are two-dimensionally distributed in a first direction and a second direction orthogonal to each other when viewed in a direction orthogonal to the semiconductor substrate. The first region and the second region are adjacent to each other in a direction crossing the first direction and the second direction. The textured surface of the first region is located toward the first main surface in comparison to the surface of the second region in a thickness direction of the semiconductor substrate. The first main surface is a light incident surface of the semiconductor substrate.

Abstract: An illuminator comprising more than one set of ultraviolet radiation sources. A first set of ultraviolet radiation sources operate in a wavelength range of approximately 270 nanometers to approximately 290 nanometers. A second set of ultraviolet radiation sources operate in a wavelength range of approximately 380 nanometers to approximately 420 nanometers. The illuminator can also include a set of sensors for acquiring data regarding at least one object to be irradiated by the first and the second set of ultraviolet radiation sources. A control system configured to control and adjust a set of radiation settings for the first and the second set of ultraviolet radiation sources based on the data acquired by the set of sensors.

Abstract: A method, an inspection system and a sensing unit. The sensing unit may include a light recycling optics and a photon to electron converter. The photon to electron converter is configured to receive a first light beam emitted from the object and impinging on the partially reflective surface at a first oblique angle, absorb a first portion and reflect a second portion of the first light beam to provide a first reflected beam. The light recycling optics is configured to redirect, towards the partially reflective surface, one or more reflected beams reflected from the partially reflective surface to provide one or more recycled beams. The photon to electron converter is configured to output electrons that represents an absorbed portion of the input light beam and an absorbed portion of each one of the one or more recycled beam.

Abstract: An imaging device includes a photodetector and an optical filter disposed on a light-receiving surface of the photodetector. The optical filter may include a diffraction grating, a core layer, and a reflector disposed on first and second opposing sides of the core layer. In some cases, the optical filter (e.g., a guided mode resonance (“GMR”) filter) uses interference of electromagnetic waves on an incidence plane of light or a plane parallel to the incidence plane. The reflector may reflect electromagnetic waves between adjacent optical filters. In some cases, the imaging device is a back-side-illuminated or front-side-illuminated CMOS or CCD image sensor.

Abstract: A radiation monitor for a lighting device, and operating methods and systems therefor are provided. In one example, a radiation monitor may include a first sensor receiving radiation output directly from a light-emitting element of the lighting device and radiation output from external sources; and a second sensor receiving the radiation output from the external sources without receiving the radiation output directly from the light-emitting element of the lighting device. The radiation monitor may determine an intensity of the radiation output directly from the light-emitting element based on a difference in the output signals from the first sensor and the second sensor.

Abstract: The disclosure describes an adaptive and optimal imaging of individual quantum emitters within a lattice or optical field of view for quantum computing. Advanced image processing techniques are described to identify individual optically active quantum bits (qubits) with an imager. Images of individual and optically-resolved quantum emitters fluorescing as a lattice are decomposed and recognized based on fluorescence. Expected spatial distributions of the quantum emitters guides the processing, which uses adaptive fitting of peak distribution functions to determine the number of quantum emitters in real time. These techniques can be used for the loading process, where atoms or ions enter the trap one-by-one, for the identification of solid-state emitters, and for internal state-detection of the quantum emitters, where each emitter can be fluorescent or dark depending on its internal state.

Abstract: A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor includes at least two first photogates symmetrically arranged in a central portion of a pixel, at least two first gates configured to remove an overflow charge generated in the at least two first photogates, and a first gate group. The at least two first gates are arranged symmetrically in an outer portion of the pixel. The first gate group includes a plurality of gates configured to store and transmit charges generated in the at least two first photogates. The first gate group is arranged in the outer portion of the pixel.