Abstract: An inspection system of semiconductor device includes a light source for producing a light beam, a lens module including at least one metalens, a receiver, and a processor. During an inspection process, the light beam emitted from the light source is focused on a target object by the metalens of the lens module and is reflected to form a reflected light by the target object. The receiver is used for receiving the reflected light. The processor is used for receiving an electric signal corresponding to the reflected light and generating an inspection result.

Abstract: A charged particle apparatus includes: a specimen chamber which is maintained at vacuum and in which a specimen is disposed; a preliminary exhaust chamber that is connected to the specimen chamber via a vacuum gate valve; an exhaust device that exhausts the preliminary exhaust chamber; charged particle beam source an optical system; a detector; a transporting device that transports the specimen from the preliminary exhaust chamber to the specimen chamber; and a control unit. The control unit performs: adjustment processing in which at least one of the optical system and the detector is adjusted in a state where the specimen is housed in the preliminary exhaust chamber; and transporting processing which is performed after the adjustment processing and in which the vacuum gate valve is opened and the transporting device transports the specimen to the specimen chamber.

Abstract: The present disclosure relates to transmission electron microscopy for evaluation of biological matter. According to an embodiment, the present disclosure further relates to an apparatus for determining the structure and/or elemental composition of a sample using 4D STEM, comprising a direct bombardment detector operating with global shutter readout, processing circuitry configured to acquire images of bright-field disks using either a contiguous array or non-contiguous array of detector pixel elements, correct distortions in the images, align each image of the images based on a centroid of the bright-field disk, calculate a radial profile of the images, normalize the radial profiles by a scaling factor, calculate the rotationally-averaged edge profile of the bright-field disk, and determine elemental composition within the specimen based on the characteristics of the edge profile of the bright-field disk corresponding to each specimen location.

Abstract: An electron microscope apparatus includes a detection unit that detects reflected electrons reflected from a sample when the sample is irradiated with primary electrons emitted by a primary electron generation unit (electron gun), an image generation unit that generates an image of a surface of the sample with the reflected electrons based on output from the detection unit, and a processing unit that generates a differential waveform signal of the image generated by the image generation unit, processes the image by using information of the differential waveform signal, and measures a dimension of a pattern formed on the sample.

Abstract: The mounting device comprises: a mounting head, having a pickup member picking up a component, which moves and places the component at a placement position by picking up the component with the pickup member from a supply section having a holding member holding the component; an imaging section configured to image the component held by the mounting head; and a control section configured to execute: a first placement process in which the component is picked up by the mounting head, positional deviation is corrected based on imaging results of the component captured by the imaging section, and the component is placed at the placement position, and a second placement process in which the component is placed at the placement position by omitting the imaging process by the imaging section at the mounting head when the positional deviation is within a predetermined allowable range.

Abstract: Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.

Abstract: A transistor includes (i) a first wire including a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature and (ii) a second wire including a superconducting component configured to operate in a superconducting state while: a temperature of the superconducting component is below a superconducting threshold temperature and a first input current supplied to the superconducting component is below a current threshold. The semiconducting component is located adjacent to the superconducting component. In response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first input current exceeds the lowered current threshold.

Abstract: A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

Abstract: Disclosed is a charged particle optical apparatus. The charged particle optical apparatus has a liner electrode in a first vacuum zone. The liner electrode is used to generate an electrostatic objective lens field. The apparatus has a second electrode which surrounds at least a section of the primary particle beam path. The section extends in the first vacuum zone and downstream of the liner electrode. A third electrode is provided having a differential pressure aperture through which the particle beam path exits from the first vacuum zone. A particle detector is configured for detecting emitted particles, which are emitted from the object and which pass through the differential pressure aperture of the third electrode. The liner electrode, the second and third electrodes are operable at different potentials relative to each other.

Abstract: The charged particle beam apparatus includes: a charged particle source configured to generate charged particles; a plurality of scanning electrodes configured to generate electric fields for deflecting charged particles that are emitted by applying an acceleration voltage to the charged particle source, and applying an extraction voltage to an extraction electrode configured to extract the charged particles; an electrostatic lens, which is provided between the plurality of scanning electrodes and a sample table, and is configured to focus a charged particle beam deflected by the plurality of scanning electrodes; and a processing unit configured to obtain a measurement condition, and set each of scanning voltages to be applied to the plurality of scanning electrodes based on the obtained measurement condition.

Abstract: A charged particle beam device includes: a charged particle beam source configured to generate a charged particle beam with which a sample is irradiated; a charged particle detection unit configured to detect a charged particle generated when the sample is irradiated with the charged particle beam; an intensity data generation unit configured to generate intensity data of the charged particle detected by the charged particle detection unit; a pulse-height value data generation unit configured to generate pulse-height value data of the charged particle detected by the charged particle detection unit; and an output unit configured to output a first image of the sample based on the intensity data and a second image of the sample based on the pulse-height value data.

Abstract: A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

Abstract: A method of determining a distortion of a field of view of a scanning electron microscope is described. The method may include: providing a sample including substantially parallel lines extending in a first direction; performing scans across the field of view of the sample along respective scan-trajectories extending in a scan direction; the scan direction being substantially perpendicular to the first direction; detecting a response signal of the sample caused by the scanning of the sample; determining a distance between a first line segment of a line and a second line segment of the line, whereby each of the first line segment and the second line segment are crossed by scan trajectories, based on the response signal; performing the previous step for multiple locations within the field of view; and determining the distortion across the field of view, based on the determined distances at the multiple locations.

Abstract: A method for evaluating a secondary optical system of an electron beam inspection device provided with a primary optical system that irradiates a sample placed at an observation target position with an electron beam emitted from an electron source, and the secondary optical system that forms, on a detector, an enlarged image of an electron beam generated from the sample or an electron beam transmitted through the sample. The method includes: placing a photoelectric surface at the observation target position; irradiating the photoelectric surface with laser; forming an enlarged image of an electron beam generated from the photoelectric surface on the detector by the secondary optical system; and evaluating the secondary optical system based on an electron beam image obtained by the detector.

Abstract: The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.

Abstract: A method for measuring electron mobility according to the present invention, which is performed by an apparatus comprising a chamber forming a sealed space, an electron gun provided in the chamber, and a metal sample disposed opposite to the electron gun in the sealed space, comprises: an electron irradiation step of irradiating the metal sample with electrons by the electron gun; a sample current measurement step of applying a voltage to the metal sample to measure a sample current obtained in the metal sample according to the applied voltage; a secondary electron current calculation step of calculating a secondary electron current through the measured sample current; and an effective incident current definition step of defining the sum of the measured sample current and the calculated secondary electron current as an effective incident current.

Abstract: Charged particle beam systems and methods, such as a multi beam charged particle beam system and related methods, can compensate sample charging.

Abstract: A charged particle beam device includes: a charged particle source; an optical system which acts on a charged particle beam emitted from the charged particle source; a control unit which controls the optical system; and a storage unit which stores previous setting values of the optical system. The optical system includes a first optical element and a second optical element for controlling a state of the charged particle beam to be incident on the first optical element. The control unit obtains an initial value of a setting value of the second optical element based on previous setting values of the second optical element; and changes a state of the charged particle beam by changing the setting value of the second optical element from the obtained initial value and obtains the setting value of the second optical element based on the change in the state of the charged particle beam.

Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.

Abstract: An image conversion unit includes a selector and a plurality of image converters. Each image converter is formed from an estimator of machine learning type, and estimates, based on an image acquired under a first observation condition and as a reference image, an image which is presumed to be acquired under a second observation condition. When a particular reference image is selected from among a plurality of reference images displayed on a display, a second observation condition corresponding to the selected reference image is set in an observation mechanism as a next observation condition.

Abstract: First shape data representing a three-dimensional shape of a sample unit including a sample is generated based on a result of three-dimensional shape measurement of the sample. Second shape data representing a three-dimensional shape of a structure which exists in a sample chamber is generated. Movement of the sample unit is controlled based on the first shape data and the second shape data such that collision of the sample unit with the structure does not occur.

Abstract: An adjustment method for adjusting a path of an electron beam passing through an electron beam device including at least one unit having at least one lens and at least one aligner electrode, and a detector configured to detect the electron beam, the method including: a step of measuring, by a coordinate measuring machine, an assembly tolerance for each of a plurality of the units constituting the electron beam device; a step of determining a shift amount of the electron beam at a position of the at least one of the lenses; a step of determining an electrode condition for each of a plurality of the aligner electrodes included in the units in a manner such that a shift amount of the electron beam is to be the determined shift amount; and a step of setting each of the aligner electrodes to the corresponding determined electrode condition.

Abstract: A multi-beam apparatus for observing a sample with oblique illumination is proposed. In the apparatus, a new source-conversion unit changes a single electron source into a slant virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample with oblique illumination, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means not only forms the slant virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots. The apparatus can provide dark-field images and/or bright-field images of the sample.

Abstract: Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

Abstract: It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substrate 101 for evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentations 104 that are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.

Abstract: Provided is a scanning electron microscope provided with an energy selection and detection function for a SE1 generated on a sample while suppressing the detection amount of a SE3 excited due to a BSE in the scanning electron microscope that does not apply a deceleration method.

Abstract: The efficiency of operation in a semiconductor processing apparatus is improved. In order to search an input parameter value to be set in a semiconductor processing apparatus for processing into a target processed shape, a predictive model indicating a relationship between an input parameter value and an output parameter value is generated based on the input parameter value and the output parameter value which is a measured value of a processing result processed by setting the input parameter value in the semiconductor processing apparatus. In this case, when the measured value of the processing result processed by the semiconductor processing apparatus is the defective data, the predictive model is generated based on the input parameter value causing defective data and defective substitute data obtained by substituting the measured value which is the defective data.

Abstract: Automated processing is provided. A charged particle beam apparatus includes: an image identity degree determination unit determining whether an identity degree is equal to or greater than a predetermined value, the identity degree indicating a degree of identity between a processing cross-section image that is an SEM image obtained through observation of a cross section of the sample by a scanning electron microscope, and a criterion image that is the processing cross-section image previously registered; and a post-determination processing unit performing a predetermined processing operation according to a result of the determination by the image identity degree determination unit.

Abstract: A particle beam device comprises a first particle beam column for providing a first particle beam and a second particle beam column for providing a second particle beam. Operating the particle beam device may include: supplying the second particle beam with second charged particles onto an object using the second particle beam column, loading a value of a control parameter into a control unit from a database or calculating the value of the control parameter in the control unit, setting an objective lens excitation of a first objective lens of the first particle beam column using the value of the control parameter, detecting second interaction particles using a particle detector. The second interaction particles may emerge from an interaction of the second particle beam with the object when the second particle beam is incident on the object.

Abstract: An object of the present disclosure is to propose a charged particle beam device capable of appropriately evaluating and setting a beam aperture angle. As one aspect for achieving the above-described object, provided is a charged particle beam device which includes a plurality of lenses and controls the plurality of lenses so as to set a focus at a predetermined height of a sample and to adjust the beam aperture angle. The charged particle beam device generates a first signal waveform based on a detection signal obtained by scanning with the beam in a state where the focus is set at a first height that is a bottom portion of a pattern formed on the sample, calculates a feature amount of a signal waveform on a bottom edge of the pattern based on the first signal waveform, and calculates the beam aperture angle based on the calculated feature amount.

Abstract: The present invention relates to a method for analyzing at least one defective location of a photolithographic mask, having the following steps: (a) obtaining measurement data for the at least one defective location of the photolithographic mask; (b) determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask; (c) correcting the reference data with at least one location-dependent correction value; and (d) analyzing the defective location by comparing the measurement data to the corrected reference data.

Abstract: A scanning electron microscope with a composite detection system and a specimen detection method. The scanning electron microscope includes a composite objective lens system including an immersion magnetic lens and an electro lens, configured to focus an initial electron beam to a specimen to form a convergent beam spot; a composite detection system located in the composite objective lens system; and a detection signal amplification and analysis system. A magnetic field of the immersion magnetic lens is immersed in the specimen; the electro lens is configured to decelerate the initial electron beam and focus the initial electron beam onto the specimen, and separate BSEs from a transmission path of an X-ray; the composite detection system is located below an inner pole piece of the immersion magnetic lens, is located above the control electrode, and includes an annular BSE detector and an annular X-ray detector that have a same axis center.

Abstract: The present invention provides a charged particle beam apparatus that covers a wide range of detection angles of charged particles emitted from a sample.

Abstract: A method and system for treating a subject with a disorder which provides within the subject at least one photoactivatable drug for treatment of the subject, applies initiation energy from at least one source to generate inside the subject a preferential x-ray flux for generation of Cherenkov radiation (CR) light capable of activating at least one photoactivatable drug, and from the CR light, activating inside the subject the at least one photoactivatable drug to thereby treat the disorder.

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: A system for analyzing a fluid includes or uses a movable flow cell assembly being disposed in an analysis location on a wall of an analysis instrument and being configured to be retained by a locking assembly on a first surface of the wall. The system includes a probe head assembly located on an opposed second surface of the wall, the probe head assembly to direct an X-ray source to analyze the fluid in a static state in the movable flow cell assembly or in a flow mode through the movable flow cell assembly. The movable flow cell assembly and the probe head assembly are in electro-magnetic communication for elemental analysis of the fluid using the X-ray source when the movable flow cell assembly is retained by the locking assembly on the first surface of the wall.

Abstract: A focused ion beam apparatus (100) includes: a focused ion beam lens column (20); a sample table (51); a sample stage (50); a memory (6M) configured to store in advance three-dimensional data on the sample table and an irradiation axis of the focused ion beam, the three-dimensional data being associated with stage coordinates of the sample stage; a display (7); and a display controller (6A) configured to cause the display to display a virtual positional relationship between the sample table (51v) and the irradiation axis (20Av) of the focused ion beam, which is exhibited when the sample stage is operated to move the sample table to a predetermined position, based on the three-dimensional data on the sample table and the irradiation axis of the focused ion beam.

Abstract: An immersion objective lens is configured below a stage such that multiple detectors can be configured above sample for large beam current application, particularly for defect inspection. Central pole piece of the immersion objective lens thus can be provided that a magnetic monopole-like field can be provided for electron beam. Auger electron detector thus can be configured to analyze materials of sample in the defect inspection.

Abstract: A method for analyzing an integrated circuit includes: applying an electric test pattern to the IC; delivering a stream of primary electrons to a back side of the IC on an active region to a transistor of interest, the active region including active structures such as transistors of the IC; detecting light resulting from cathodoluminescence initiated by secondary electrons in the IC; and analyzing the detected light regarding a correlation with the electric test pattern applied to the IC. A system for analyzing an IC is provided.

Abstract: An apparatus for processing and observing a cross-section includes: a sample bed holding a sample; a focused ion beam column radiating a focused ion beam to the sample; an electron beam column radiating an electron beam to the sample, perpendicularly to the focused ion beam; an electron detector detecting secondary electrons or reflection electrons generated from the sample; a irradiation position controller controlling irradiation positions of the focused ion beam and the electron beam based on target irradiation position information showing target irradiation positions of beams on the sample; a process controller controlling a cross-section-exposing process that exposes a cross-section of the sample by radiating the focused ion beam to the sample and a cross-section image-obtaining process that obtains a cross-section image of the cross-section by radiating the electron beam to the cross-section; and an image quality corrector correcting image quality of the cross-section image obtained.

Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: A method of generating a result image of an object using a particle beam system includes recording multiple primary images of a region of the object using the particle beam system. Recording of each of the primary images includes scanning the primary particle beam along a scan direction across the region and detecting secondary particles generated thereby. The scan directions used for recording at least one pair of two of the primary images differ at least by a first threshold value of at least 10°. The method also includes generating, based on the multiple primary images, the result image representing the region of the object.

Abstract: A method of operating a particle beam microscope includes repeating a sequence to move a particle beam across a surface of an object. The surface of the object has a region defined by a closed boundary line. The sequence includes moving the particle beam from an entry location of the present sequence to an exit location of the present sequence along a scan path. The entry location of the present sequence and the exit location of the present sequence are located on the boundary line. The scan path is located entirely inside the region of the surface of the object. The sequence also includes moving the particle beam from the exit location of the present sequence to an entry location of the next sequence along a return path. The entry location of the next sequence is located on the boundary line. The return path is located entirely outside the region of the surface of the object.

Abstract: An image inspection method includes capturing a target object image, which the target object image comprises a plurality of graphical features; choosing a block image comprising a specific graphical feature of the plurality of graphical features from the target object image; capturing all the graphical features of the block image to obtain a region of interest (ROI); executing a filtering process or a recovering process on the ROI to obtain a pre-processed region; and inspecting, according to the pre-processed region, the target object image to determine whether the target object image has defects.

Abstract: A substrate processing method is provided. The substrate processing method includes placing a substrate storage container storing a substrate on a load port; automatically determining a type of the substrate stored in the placed substrate storage container; by referring to a storage unit that stores a parameter data set related to a transport condition for each substrate type, controlling transport of the substrate stored in the substrate storage container based on the parameter data set corresponding to the automatically determined type of the substrate to process the substrate, and, after automatically determining the type of the substrate, and before transporting the substrate stored in the substrate storage container, performing mapping based on conditions set in the parameter data set to detect an abnormality of the substrate stored in the substrate storage container.

Abstract: The present disclosure relates, in some embodiments, to a composition comprising a biomaterial. A biomaterial may comprise, for example, one or more molecules capable of self-association and/or self-assembly. In some embodiments, a biomaterial may comprise one or more polypeptides and/or proteins. A biomaterial may comprise, for example, two or more self-assembled Ultrabithorax (Ubx) protein molecules. A Ubx protein, in some embodiments, may be any wild type Drosophila melanogaster Ultrabithorax protein, including any natural or non-natural isoforms (e.g., alternative splicing isoforms). The present disclosure relates, in some embodiments, to a method of making a biomaterial comprising contacting two or more Ubx protein molecules under conditions that permit self-assembly to form a first fibril and contacting the first fibril to a second fibril.

Abstract: A method of generating an elemental map includes: acquiring a plurality of correction channel images by scanning a surface of a standard specimen having a uniform elemental concentration with a primary beam and generating a correction channel image for each channel; generating correction information for each pixel of each correction channel image among the plurality of correction channel images based on a brightness value of the pixel; acquiring a plurality of analysis channel images by scanning a surface of a specimen to be analyzed with the primary beam and generating an analysis channel image for each channel; correcting brightness values of pixels constituting an analysis channel image among the plurality of analysis channel images based on the correction information; and generating an elemental map of the specimen to be analyzed based on the plurality of analysis channel images having pixels with corrected brightness values.

Abstract: A soft error inspection method for a semiconductor device includes: irradiating and scanning the semiconductor device with a laser beam or an electron beam; and measuring and storing a time of bit inversion for each of areas irradiated with the laser beam or the electron beam of the semiconductor device.