Abstract: A highly-sensitive, pyroelectric infrared sensing method and apparatus that can detect infrared temperature with high sensitivity throughout the entire electromagnetic wave range including millimeter waves and radioactive rays. The supersensitive infrared sensor is an infrared sensor of a type that emits electrons from a surface of a ferroelectric body having no emitter. Therefore, a gate electrode is not required to be provided in the vicinity of an emitter. Accordingly, since electrons are emitted directly from a PZT thin film, which serves as a ferroelectric body, in proportion to a temperature variation caused by irradiation of an infrared ray, only provision of an anode is required. Further, designation of machining conditions of the surface of the ferroelectric body is unnecessary.

Abstract: A pyroelectric sensor having an active regulation for maximizing pyroelectric sensor sensitivity is disclosed. The pyroelectric sensor comprises a ferroelectric transducer, and a regulator. The ferroelectric transducer may either be a homogenous ferroelectric transducer, a compositionally graded ferroelectric transducer, or an externally graded ferroelectric transducer. The regulator may either be an excitation regulator or a temperature regulator. A method for regulating the excitation or the temperature of a pyroelectric sensor for maximizing sensitivity of the pyroelectric sensor is also disclosed.

Abstract: In a microbolometer detector the individual transducers in the focal plane array are support by leg members that are attached to the underlying readout integrated circuit (ROIC) chip at locations underneath transducers other than transducer which they support. A variety of configurations are possible. For example, the leg members may be attached to the ROIC chip at locations under adjacent transducers on opposite sides or on the same side of the supported transducer, or at locations underneath transducers that are not immediately adjacent to the supported transducer. In this way the effective length of the leg members and therefore the thermal isolation of the transducer they support can be increased.

Abstract: The invention relates to a semiconductor component with a WSiN layer as thin-film resistor with high temperature coefficient for use as thermistor in bolometers. The production method comprises thermal decoupling by means of thermistors that are free-standing or disposed on an insulation layer.

Abstract: An infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 &mgr;m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectionally oriented layer. Distortion of the single-crystalline layer or a unidirectionally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge varies with changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5.

Abstract: A circuit device that make use of graded ferroelectric structures and techniques by which such structures can be excited by external and internal stimuli to render the device useful for a variety of circuit applications. The device comprises at least two ferroelectric films, each of the films having a graded dipole moment in a thickness direction normal to the surfaces thereof. The graded dipole moment of each film is effective to produce a change in the dipole charge density, and hence an apparent net charge, on the first and second surfaces of each film when an alternating electric field is applied to the film and additional energy is imparted to the film. By providing an electrical connection between the films, changes in the dipole charge density of the films generated by application of the alternating electric field yield a device charge separation output that differs from the individual changes in the dipole charge density of the films.

Abstract: An infrared sensor is provided, which includes a substrate 12, a diaphragm 14 supported by the substrate, at least one thermocouple 17 provided with a cold junction 20 formed on the substrate and a hot junction 18 formed on the diaphragm, and an infrared-absorptive film 24 formed on the diaphragm so as to cover the hot junction of the thermocouple. The area of the infrared-absorptive film is 64% to 100% of the area of the diaphragm.

Abstract: The present invention provides electromagnetic chips and electromagnetic biochips having arrays of individually addressable micro-electromagnetic units, as well as methods of utilizing these chips for directed manipulation of micro-particles and micro-structures such as biomolecules and chemical reagents.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A microbolometer comprising a support substrate having an interrogation surface, a film of a temperature sensitive magnetic material is spaced from the interrogation surface a predetermined distance. An interrogation inductor is formed on the support substrate facing the film, and a readout circuit on the interrogation surface is electrically connected to the interrogation inductor. The temperature sensitive magnetic material has a steep, reversible change in its AC magnetic susceptibility at the magnetic Curie temperature. This structure provides a ferromagnetic transition edge bolometer adapted to reversibly change the low field magnetic susceptibility in the region corresponding to the onset of ferromagnetism (ferromagnetic Curie temperature) in response to incident IR radiation.

Abstract: An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.

Abstract: A sensing apparatus, a bolometer, and a bolometer sensor includes an inductor and capacitor connected as a resonant circuit. At least one of the capacitor or inductor has a temperature-dependent reactance, and the resonant frequency is dependent on the temperature of inductor or capacitor. The bolometer is suitable for fusion research and its resonant circuit includes a ferroelectric capacitor. The resonant frequency of the circuit may be tracked by means of a phase locked loop.

Abstract: A ferroelectric/pyroelectric infrared detector includes a lattice matched substrate material and a colossal magneto-resistive electrode material. In a second embodiment, the ferroelectric/pyroelectric detector includes a colossal magneto-resistive template material to accommodate the use of a non-lattice matched substrate material, and a colossal magneto-resistive electrode material. The embodiments of the present invention provide a semi-transparent electrode material of the requisite lattice constant value, crystal orientation, and chemical compatibility.

Abstract: The present invention provides an infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 &mgr;m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectioally oriented layer. Distortion of the single-crystalline layer or a unidirectioally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge is changed by changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5. The amount of the charge is detected from the first and the second electrode layer 4, 6.

Abstract: A thermal type infrared ray detector with a thermal separation structure includes a plurality of picture elements. Each of the plurality of picture elements includes a circuit formed in a substrate for every picture element, and a light receiving section converting infrared rays into change of a resistance or a charge quantity. The circuit generates a voltage signal from the resistance change or the charge quantity change. Beams mechanically support the light receiving section from the substrate to form a gap between the light receiving section and the substrate, and electrically connect the light receiving section to the circuit. Each of the beams includes a wiring line film formed of Ti alloy and connecting the light receiving section to the circuit, and a protective insulating film surrounding the wiring line film. In this case, the Ti alloy may be TiAl6V4.

Abstract: A thermal imaging device comprises an array of microbridges(10) disposed on a silicon readout circuit substrate (12). Each microbridge (10) is supported above the substrate (12) by electrodes (14 and 16) so that a cavity (26) is present between the microbridge (10) and the substrate (12). Each microbridge (10) has a collecting area, a region of which is occupied by a ferroelectric active element (20) which converts to received thermal radiation into an electrical response. Radiation which is received by regions of the collecting area not occupied by the active element (20) is converted into heat energy and then transmitted to the active element (20) by conduction.

Abstract: A method for adjusting the frequency of a piezoelectric resonator allows for frequency adjustments to be individually made for each of a plurality of elements disposed on a piezoelectric substrate before the resonator is completed. Moreover, the frequency adjustments can be made with high accuracy in a relatively short time. When adjusting the frequency of each element, an ion beam is irradiated onto a plurality of electrodes disposed on the piezoelectric substrate to etch the electrodes.

Abstract: A method for constructing a thin-film infrared photodetector includes providing a thin film including ferroelectric polymer, and applying at least one electrically conductive coating to the polymer so that the coating is nonuniform in surface conductivity to thereby provide an area of higher surface resistance connected to an output region by an area of lower surface resistance.

Abstract: A thermal detector device comprising an array of thermal detector elements, an array of microbridge structures comprising the array of thermal detector elements, readout silicon integrated circuitry (ROIC) and an interconnect layer on which the array of microbridge structures are arranged. The interconnect layer comprises a plurality of conducting interconnect channels providing an electrical connection between the microbridge structures and input contacts on the ROIC such that the microbridge structures are in electrical contact with, but are separated from, the readout silicon integrated circuitry. As the interconnect layer separates the microbridge structures from the ROIC, the detector material, typically a ferroelectric material, may be fabricated on the microbridge structures at a deposition or anneal temperature which is not limited by the avoidance of damage to the ROIC. Deposition temperatures of at least 500° C. or, preferably, at higher temperatures e.g. 700° C.-900° C.

Abstract: A sensing apparatus, a bolometer, and a bolometer sensor includes an inductor and capacitor connected as a resonant circuit. At least one of the capacitor or inductor has a temperature-dependent reactance, and the resonant frequency is dependent on the temperature of inductor or capacitor. The bolometer is suitable for fusion research and its resonant circuit includes a ferroelectric capacitor. The resonant frequency of the circuit may be tracked by means of a phase locked loop.

Abstract: An infrared detector array includes a plurality of detector pixel structures, each having a plurality of coplanar sections responsive to different bands of infrared radiations. Each section of a pixel structure comprises a plurality of elongate quantum well infrared radiation absorbing photoconductor (QWIP) elements. The group of QWIP elements are spaced such that they comprise a diffraction grating for the received infrared radiation. Top and bottom longitudinal contacts are provided on opposite surfaces of the QWIP elongate elements to provide current flow transverse to the axis of the element to provide the required bias voltage. An infrared radiation reflector is provided to form an optical cavity for receiving infrared radiation. A plurality of detector pixel structures are combined to form a focal plane array. Each pixel structure section produces a signal that is transmitted through a conductive bump to a terminal of a read out integrated circuit.

Abstract: A ferroelectric/pyroelectric sensor that employs a technique for determining a charge output of a pyroelectric element of the sensor by measuring the hysteresis loop output of the element several times during a particular time frame for the same temperature. An external AC signal is applied to the pyroelectric element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination capacitor and operational amplifier, is employed to measure the charge from the element. A mechanical shutter is not used, and thus the charge integration output from the element is directly proportional to the incident radiation thereof.

Abstract: A ferroelectric ceramic for use as a pyroelectric is provided. In a disclosed embodiment, the ceramic has the composition: Pb1+&dgr;{[(Mg⅓Nb⅔)y(Zr1−xTix)1−y]1−zAz}O3 where: 0.05≧67 ≧0 0.42≧x>0 0.42≧y>0 0.05≧z>0 and wherein A is a cationic multivalent octahedral site substituent. The ferroelectric ceramic is useful as an active pyroelectric material in infrared detecting devices.

Abstract: The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

Abstract: A ferroelectric/pyroelectric sensor that employs a technique for determining a charge output of a pyroelectric element of the sensor by measuring the hysteresis loop output of the element several times during a particular time frame for the same temperature. An external AC signal is applied to the pyroelectric element to cause the hysteresis loop output from the element to switch polarization. The frequency of the external AC signal is greater than the frequency of a chopper selectively applying a reference temperature and a scene temperature alternately to the pyroelectric element. Each time the chopper provides the reference temperature or the scene temperature to the element, the alternating external source covers multiple cycles so that the hysteresis loop output is switched multiple times for increased signal averaging.

Abstract: The invention relates to a device for the detection of electromagnetic radiation comprising at least two elementary detectors (Dij), each elementary detector (Dij) comprising a first conductive terminal (pija) and a second conductive terminal (pijb) for sampling an electric signal representative of the detected radiation. The detection device incorporates first means (Iija) for connecting or disconnecting a first conductive terminal of the elementary detector (pija) with respect to a first input terminal of a processing circuit and second means (Iijb) for connecting or disconnecting a second conductive terminal (pijb) of the detector (Dij) with respect to a second input terminal of the processing circuit (Tj).