Abstract: Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

Abstract: Provided is a method for measuring interstitial oxygen concentration in a silicon wafer easily and sensitively using FT-IR. The invention provides a method for measuring an extremely low oxygen concentration of <1.0×1016 atoms/cm3 in a single-crystal silicon wafer, the method comprising: step 1 of forming a SiO2 film, nitride film or PE film on each of a measurement wafer, interstitial-oxygen-free reference wafer and standard wafer with known interstitial oxygen concentration; step 2 of measuring IR spectra of the three wafers; step 3 of determining a difference transmission spectrum from the IR spectrum of measurement wafer and that of reference wafer and determining the intensity of an absorption peak corresponding to interstitial oxygen; and step 4 of comparing the peak intensity of the interstitial oxygen and that of standard wafer and calculating the interstitial oxygen concentration in measurement wafer from ratio to the interstitial oxygen concentration of standard wafer.

Abstract: An ion source is provided comprising a nebuliser or electrospray probe (1) for nebulising a sample and an impact surface or target electrode (5). The impact surface or target electrode (5) comprises a tarnishable or oxidisable metal or an alloy comprising a tarnishable or oxidisable metal. Also provided is an ion source comprising a nebuliser or electrospray probe with a central wire comprising a tarnishable or oxidisable metal or an alloy comprising a tarnishable or oxidisable metal or an alloy comprising a tarnishable or oxidisable metal. Adducts with relatively heavy metals result in simplified multiply-charged mass spectra that are easier to interpret.

Abstract: Surface sensing methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy are disclosed herein. The methods include exposing a sampled location of the scanned surface to a visible light beam and exposing the sampled location to a tunable infrared beam such that the tunable infrared beam is at least partially coincident with the visible light beam. The methods also include varying a frequency of the tunable infrared beam an inducing optical resonance within an imaged structure that extends at least partially within the sampled location. The methods further include receiving at least a portion of an emitted light beam from the sampled location and scanning the visible light beam and the runnable infrared beam across the scanned portion of the scanned surface. The methods also include generating an image of the scanned portion of the scanned surface based upon the receiving and the scanning.

Abstract: A system is disclosed. In one embodiment, the system includes a scanning electron microscopy sub-system including an electron source configured to generate an electron beam and an electron-optical assembly including one or more electron-optical elements configured to direct the electron beam to the specimen. In another embodiment, the system includes one or more grounding paths coupled to the specimen, the one or more grounding paths configured to generate one or more transmission signals based on one or more received electron beam-induced transmission currents. In another embodiment, the system includes a controller configured to: generate control signals configured to cause the scanning electron microscopy sub-system to scan the portion of the electron beam across a portion of the specimen; receive the transmission signals via the one or more grounding paths; and generate transmission current images based on the transmission signals.

Abstract: A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H1 of a modified layer in a wafer that is set by a setting section according to the equation (1) below. Defocus=(thickness T1 of wafer?height value H1?b)/a??(1) The calculating section calculates an appropriate vertical position for the condensing lens according to the equation (1) depending on the height value H1 of the modified layer that is set by the setting section. Therefore, the vertical position of the condensing lens in laser processing operation can be determined more easily, and a time-consuming and tedious experiment for fine adjustment of the vertical position of the condensing lens does not need to be conducted.

Abstract: A highly flexible, compact, lightweight, and portable testing system for use with radiation testing activities. The testing system is coupled to a device under test (DUT), which can be positioned in such a way that the top of the die package is exposed to the direct ion beam during radiation testing. A variety of sensors, onboard memory systems, programmable interfaces, onboard control systems, data output devices, and different types of interfaces are also provided which provide an ability to perform testing procedures while having a maximum ability to orient the DUT and perform a wide variety of testing currently unavailable.

Abstract: A portable heating chamber system is adapted and configured for use in performing pyrometric proficiency testing. Within an enclosing structure is an array of thermocouples which function as temperature sensors. Heat is generated within the chamber by one or more electric resistive heat sources, and heated air is circulated by one or more electric fans. Outside the enclosing structure are a temperature controller and a data acquisition device, which applies correction factors to the temperature data and determines uncertainties to assess testing proficiency.

Abstract: A method includes receiving image data from a camera coupled to an air intake system of a gas turbine engine. The image data corresponds to an air passage of the air intake system. The method also includes comparing the received image data to reference image data of the air intake system. The method also includes generating an icing notification based at least in part on the comparison when a difference between the received image data and reference image data is greater than an icing threshold.

Abstract: An ultra-high temperature optical method incorporates speckle optics for sensing displacement and strain measurements well above conventional measurement techniques. High temperature pattern materials are used which can endure experimental high temperature environments while simultaneously having a minimum optical aberration. A purge medium is used to reduce or eliminate optical distortions and to reduce, and/or eliminate oxidation of the target specimen.

Abstract: The invention relates to a method and a device for twin-focus photothermal correlation spectroscopy for the characterization of dynamical processes in liquids and biomaterials with the help of absorbing markers. Thereby non-fluorescent absorbing nano objects are heated by an intensity-modulated heating laser which leads to a refractive index gradient lens around the object. This refractive index gradient is detected by a detection laser with a focal volume that, depending on the position of the heated object relative to the focal plane of the detection beam, splits into two-sub-volumes forming a twin-focus comprising two sharply separated parts of a focal volume showing no spatial overlap.

Abstract: In a region in which silicon semiconductor layers having first and second conductive types are stacked, a concavoconvex structure including a Si1-xGex (x=0.01 to 0.9) layer is formed on a surface of the first silicon semiconductor layer, a relatively thin dielectric is formed on the concavoconvex structure, and a silicon semiconductor layer having the second conductive type is further stacked.

Abstract: A method is presented. The method includes the steps of generating rotation signals corresponding to a plurality of rotations of a rotor physically coupled to a plurality of blades, and determining peak voltages corresponding to the plurality of blades by applying time synchronous averaging technique to blade passing signals using the rotation signals, wherein the peak voltages are representative of clearances of the plurality of blades.

Abstract: A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).

Abstract: Disclosed is an apparatus for appropriately inspecting a defect on at least one of organic layers stacked on a substrate in an organic light emitting diode. The apparatus includes: an illumination unit configured to irradiate a near infrared light of a wavelength ranging from 0.7 ?m to 2.5 ?m toward the at least one of the organic layers on a glass substrate; an imaging unit configured to image the at least one of the organic layers irradiated with the near infrared light illuminated from the illumination unit; and a processing container configured to accommodate the illumination unit and the imaging unit therein and perform inspection of the at least one of the organic layers. An inside of the processing container is maintained in an atmosphere at an oxygen concentration lower than an oxygen concentration of air and at a dew point temperature lower than a dew point temperature of air.

Abstract: There is provided an optical system, including: an extracting section, the refractive index of the extracting section being approximately the same as the refractive index of an observed object, the extracting section being optically coupled with the observed object to thereby extract a terahertz electromagnetic wave generated from the observed object; and an ellipsoidal reflector surface having a first focal point and a second focal point, the observed object being to be arranged on the first focal point, a photoconductive device being on the second focal point, the photoconductive device being configured to detect the terahertz electromagnetic wave extracted by the extracting section, the ellipsoidal reflector surface guiding the extracted terahertz electromagnetic wave to the photoconductive device.

Abstract: A technology of inspecting a photoexcited carrier generation area of a photo device in a non-contact manner is provided. An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes an irradiation part that irradiates the photovoltaic cell panel with pulsed light from a light receiving surface side and a detecting part (detector) that detects electric field intensity of a terahertz wave pulse, which is generated according to the irradiation of the pulsed light.

Abstract: A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material and splitting the radiation into two beams, passing each beam through pass band filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.

Abstract: A method for inspecting a substrate having intrinsic heterogeneous patterns for the presence of cracks comprises the steps of providing an optical device and front-side lighting on a first side of the substrate and providing near-infrared lighting on a second side of the substrate opposite to the first side. The near-infrared lighting is operable to penetrate the substrate so as to be detectable by the optical device through the substrate. One or more images are obtained by illuminating the substrate with the front-side lighting and/or the near-infrared lighting from the second side. The one or more images are thereafter processed to distinguish between the heterogeneous patterns on the substrate and any cracks present on the substrate.

Abstract: The invention relates to a method for examining a wire-sawn silicon substrate for a solar cell. The method includes irradiating the silicon substrate with an infrared radiation, detecting the infrared radiation transmitted through the silicon substrate, and analyzing the detected infrared radiation for characterizing the crystal orientation of the silicon substrate. The invention in addition relates to a device for carrying out such a method, and a method for manufacturing a solar cell.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: Embodiments of the invention provide a method and an apparatus for detecting the temperature of a substrate surface. In one embodiment, a method for measuring the temperature is provided which includes exposing the surface of the substrate to a laser beam radiating from a laser source, radiating emitted light from a portion of the surface of the substrate, through the shadow ring, and towards a thermal sensor, and determining the temperature of the portion of the surface of the substrate from the emitted light. The substrate may be disposed on a substrate support within a treatment region and a shadow ring may be disposed between the laser source and the surface of the substrate. The shadow ring may be selectively opaque to the laser beam and transparent to the emitted light.

Abstract: A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material and splitting the radiation into two beams, passing each beam through pass band filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.

Abstract: A reflector tool and a method are provided for three-dimensional integrated circuit (IC) failure analysis. An IC (die) has top and bottom surfaces, a perimeter, and a first side. The IC is electrically connected to a current sensing amplifier. The first side of the IC is scanned in the X plane with an infrared laser beam while changes in IC current flow are sensed. The sensed current changes are cross-referenced to the location of the infrared laser beam in the X plane. In one aspect, a plurality of scans are performed on the first side in the X plane, with at a corresponding plurality of steps in the Y plane, so that current changes can be cross-referenced to locations in the X and Y planes. Using this 2-D analysis through the IC side, a human operator or software program can determine defects in the IC.

Abstract: An infrared detector includes a first PN junction diode and a second PN junction diode which are formed in a silicon layer formed apart from a support substrate, the silicon layer having a P-type first region and an N-type second region, wherein the first PN junction diode is composed of the P-type first region and an N-type first region formed in the P-type first region at a position separated from the N-type second region, and the second PN junction diode is composed of the N-type second region and a P-type second region formed in the N-type second region at a position separated from the P-type first region, and wherein the first PN junction diode and the second PN junction diode are connected by a metal film formed on a surface of a concave portion spreading both of the P-type first region and the N-type second region.

Abstract: A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.

Abstract: In a method for analyzing photoresist, light having a wavelength which responds to a photoresist film is selected. The photoresist film is exposed to the selected light. Changes of components and properties of the photoresist film are analyzed while the photoresist film is being exposed to the selected light.

Abstract: Disclosed is a method for evaluating the performance of a solar cell which comprises a silicon semiconductor as the main component. This method comprises a current introduction step for introducing a direct current into a solar cell element constituting the solar cell in the forward direction, and an emission sensing step for sensing emission characteristics of the light emitted from the solar cell element due to the current introduction step. By this method, the photoelectric conversion performance of a solar cell can be simply and accurately evaluated without requiring large-sized equipment.

Abstract: The invention relates to a device for monitoring the oxygen concentration in an aircraft tank. The device includes an absorption measuring section equipped with a laser or laser diode (6), a photodiode (7), a temperature sensor (8) and a reflector (5) for carrying out laser spectroscopy on a gas volume to be measured inside the tank. The conducting components of the device are positioned outside the tank and its reflector (5) is positioned in the tank in the gas volume to be measured, the components and reflector being optically coupled by a window (3) that is situated in the tank wall (2). The absorption measuring section is mainly located in the chamber containing the gas to be measured.

Abstract: In an inspection of a semiconductor wafer for a defect, when infrared light passing through a semiconductor wafer is imaged by a camera and an inspection is conducted using the image, a problem that halation occurs in the camera due to light leaking from the side of the inspection object, which makes it impossible to conduct an inspection at the periphery portion occurs. An inspection object is irradiated by an infrared light source, and transmitted light is imaged by an infrared camera to be conducted. With the use of mask means that secures a clearance from the end portion on the outer side, it is possible to inspect on the peripheral portion. Also, as means for supporting the object, plural sets of those configured to be capable of evacuating are used, and by allowing the plural sets to evacuate alternately, it is possible to inspect across the entire surface.

Abstract: A method of checking a deteriorated layer formed in the inside of a workpiece along a dividing line by applying a laser beam capable of passing through the workpiece to the workpiece along the dividing line formed on the workpiece, the method comprising a focusing step of positioning a microscope of infrared image pick-up means to the dividing line formed on the workpiece, and setting the focusing point of the microscope to a position where the deteriorated layer in the inside of the workpiece has been formed; and an image pick-up step of picking up an image of the inside of the workpiece by moving the infrared image pick-up means and the workpiece along the dividing line relative to each other to scan the workpiece, wherein the deteriorated layer formed in the inside of the workpiece is checked based on the image picked up in the image pick-up step.

Abstract: A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and characterization of adsorbed chemical species on a substrate. The process monitoring can be applied to endpoint- and fault detection in etching and deposition processes, in addition to chamber cleaning and chamber condition steps.

Abstract: Method and apparatus for optically testing (e.g., using a laser beam) an operating integrated circuit (device under test—DUT) that actively control the operating temperature of the DUT. This is chiefly useful with flip-chip packaged ICs. The temperature of the DUT varies with its operating power consumption, and this fluctuation in temperature adversely affects the results obtained during optical probing or other optical testing. Furthermore, the DUT may be damaged if its temperature exceeds design limits. The temperature of the DUT is controlled by thermally contacting the exposed backside surface of the DUT die to a diamond film heat conductor, an associated heat sink structure, and at least one thermoelectric device. The thermoelectric device is controlled by a temperature sensor proximal to the DUT. By controlling the amount and direction of the electrical current supplied to the thermoelectric device in response to the sensed temperature, the temperature of the DUT is maintained.

Abstract: The invention is directed to a system and method for analyzing an integrated circuit having silicon on insulator (SOI) structure. According to one example embodiment of the present invention, an optical beam arrangement is adapted to direct a modulated beam at a selected portion of the integrated circuit. The beam is sufficiently modulated to inhibit optical beam intrusion on the structure and operation of the integrated circuit. A reflected optical waveform response is obtained from the SOI selected portion. The inhibition of optical beam intrusion enhances the ability to analyze integrated circuits using an optical beam, making possible the use of analysis methods that otherwise would be difficult or even impossible to use.

Abstract: Mesoporous silica is shown to be a sample holder for laser desorption/ionization of mass spectrometry. Supported mesoporous silica was prepared by coating an ethanolic silicate solution having a removable surfactant onto a substrate to produce a self-assembled, ordered, nanocomposite silica thin film. The surfactant was chosen to provide a desired pore size between about 1 nanometer diameter and 50 nanometers diameter. Removal of the surfactant resulted in a mesoporous silica thin film on the substrate. Samples having a molecular weight below 1000, such as C60 and tryptophan, were adsorbed onto and into the mesoporous silica thin film sample holder and analyzed using laser desorption/ionization mass spectrometry.

Abstract: Described are methods and systems for providing improved defect detection and analysis using infrared thermography. Test vectors heat features of a device under test to produce thermal characteristics useful in identifying defects. The test vectors are timed to enhance the thermal contrast between defects and the surrounding features, enabling IR imaging equipment to acquire improved thermographic images. In some embodiments, a combination of AC and DC test vectors maximize power transfer to expedite heating, and therefore testing. Mathematical transformations applied to the improved images further enhance defect detection and analysis. Some defects produce image artifacts, or “defect artifacts,” that obscure the defects, rendering difficult the task of defect location. Some embodiments employ defect-location algorithms that analyze defect artifacts to precisely locate corresponding defects.

Abstract: A method, device and software are disclosed which permit testing of both the optical portion and the electrical portion of an imaging device in a live bug configuration. Once an automated handler has positioned the device to be tested, the optical sensor on the image device is illuminated with electromagnetic radiation and electrical test signals are provided through the electrical pins on the integrated circuit package. These electrical and optical tests can be performed in sequence or simultaneously. The automated handler does not need to reposition or disengage from the device under test until both the electrical and optical tests are completed.

Abstract: A surface of the component in MEMS is illuminated by an illumination beam and the reflected beam is collected and detected by a position sensitive detector or photo detector array. As the surface is tilted about a pivot or about X and Y axes, the change in position of the collected beam is detected for characterizing the mechanical and optical properties of MEMS.

Abstract: A method and apparatus for testing the operability of a signal source formed on a die are described. A pair of modulators are formed on the die and coupled to the signal source. An optical unit is optically coupled to the pair of modulators, which are capable of modulating an optical beam in response to a signal provided by the signal source. The optical unit is capable of detecting modulation of the optical beam. To test the signal source, the signal source is set to generate a signal. If modulation of the optical beam is detected at the optical unit, then the signal source is operable. If modulation of the optical beam is not detected at the optical unit, then the signal source is not operable.

Abstract: This invention discloses methods, materials, and devices for making and screening combinatorial libraries to identify semi-conducting and thermoelectric materials. The disclosed method includes preparing a combinatorial library of materials, and identifying library members that are semiconductors. The method may include determining a thermoelectric figure of merit, ZT, for each member of a second combinatorial library of materials. The method determines ZT by applying an oscillatory voltage across the library members, measuring power dissipated by library members, and calculating ZT from the power dissipated. The method may also include isolating single-phase materials of the semiconducting library members. The present invention also discloses an apparatus for discovering thermoelectric materials using combinatorial techniques.

Abstract: A surface state monitoring apparatus for monitoring a surface state of semiconductor substrates by infrared spectroscopy at fabrication site of semiconductor substrates. The apparatus comprises an incidence optical system for introducing infrared radiation into a substrate-to-be-monitored, a detection optical system for detecting infrared radiation which has undergone multiple reflections inside the substrate and exited from the substrate, a surface state monitoring means for monitoring a surface state of the substrate based on the detected infrared radiation, a position detecting means for optically detecting a position of the substrate, and a control means for controlling a position and an angle at which infrared radiation to be incident on the substrate, corresponding to the position of the substrate.

Abstract: Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample region. The system further comprises an absorption spectroscopy measurement system for detecting a gas phase molecular species. The measurement system comprises a light source and a main detector in optical communication with the sample region through one or more light transmissive window. The light source directs a light beam into the sample region through one of the one or more light transmissive window. The light beam passes through the sample region and exits the sample region through one of the one or more light transmissive window. The main detector responds to the light beam exiting the sample region.

Abstract: Provided is a novel chamber effluent monitoring system. The system comprises a chamber having an exhaust line connected thereto. The exhaust line includes a sample region, wherein substantially all of a chamber effluent also passes through the sample region. The system further comprises an absorption spectroscopy measurement system for detecting a gas phase molecular species. The measurement system comprises a light source and a main detector in optical communication with the sample region through one or more light transmissive window. The light source directs a light beam into the sample region through one of the one or more light transmissive window. The light beam passes through the sample region and exits the sample region through one of the one or more light transmissive window. The main detector responds to the light beam exiting the sample region.

Abstract: Disclosed is spectroscopic ellipsometer system mediated methodology for quantifying thickness and impurity profile defining parameters in mathematical models of impurity profile containing thin membranes having two substantially parallel surfaces which are separated by a thickness, wherein the spectroscopic ellipsometer system operates in near-IR and IR wavelength ranges.

Abstract: Various methods of inspecting a film on a semiconductor workpiece for a residue are provided. In one aspect, a method of inspecting a film on a semiconductor workpiece wherein the film has a known infrared signature is provided. The method includes heating the workpiece so that the film emits infrared radiation and sensing the infrared radiation emitted from the film. The infrared signature of the radiation emitted from the film is compared with the known infrared signature and a signal indicative of a deviation between the infrared signature of the emitted infrared radiation and the known infrared signature is generated. The method enables the rapid and accurate detection of residues, such as oxide residues on nitride films.

Abstract: The surface state monitoring apparatus comprises: a wafer cassette holding a plurality of semiconductor wafers; an incidence optical system for applying infrared radiation to at least one of said plurality of semiconductor wafers; a detection optical system for detecting the infrared radiation which has undergone multiple reflection in the semiconductor wafer and exited from the semiconductor wafer; surface state monitoring means for monitoring surface states of the semiconductor wafer, based on the infrared radiation detected by the detection optical system; and displacing means for displacing the wafer cassette relative to the incidence optical system and the detection optical system.

Abstract: A method of evaluating the quality of a silicon wafer is characterized by analyzing a silicon wafer by an infrared absorption spectrum, and then evaluating the quality of the silicon crystal based on an absorbance ratio represented by the following formula (1): {(Absorbance &agr;1 at an arbitrary wavenumber between 1055 and 1080 cm−1)−(Absorbance &agr;BL of base line)}/{(Absorbance &agr;2 at an arbitrary wavenumber between 1100 and 1120 cm−1)−(Absorbance &agr;BL of base line)}  (1) wherein absorbances &agr;1 and &agr;2 represent absorbances of the measured silicon wafer, and base line absorbance &agr;BL represents the absorbance of a base line of the measured silicon wafer, which is drawn from 1030 to 1170 cm−1. By using the quality evaluating method of the present invention, internal crystal defects of silicon can be precisely detected in a non-destructive manner.

Abstract: Disclosed is spectroscopic ellipsometer system mediated methodology for quantifying thickness and impurity profile defining parameters in mathematical models of impurity profile containing thin membranes having two substantially parallel surfaces which are separated by a thickness, wherein the spectroscopic ellipsometer system operates in near-IR and IR wavelength ranges.

Abstract: A method of analyzing the morphology of bulk and surface defects on a semiconductor wafer includes: determining a location of the defects; marking an indication proximate the location; milling the wafer using the indication, to thereby make a specimen; and analyzing the specimen to obtain the defects' morphology. Bulk defects as deep 5-250 &mgr;m can be detected and surface defects as deep as 10 &mgr;m from the wafer's surface can be detected. Both morphology analyses preferably include using TEM (Transmission Electron Microscopy). The location determination for both defects preferably includes projecting a laser beam onto the wafer. By obtaining the morphology of the defects, the cause of failure due to the bulk defects and surface defects can accurately be investigated, increasing semiconductor devices' reliability.

Abstract: A method and apparatus for the determination of parameters of interests of a semiconductor sample is provided. For example, the thickness of an epitaxial or implanted layer, the thickness of a transition layer and the concentration of free carriers in a substrate layer may be determined without having to destroy the semiconductor sample in the process. In an embodiment, a method is provided for determining at least one parameter of a semiconductor. The method starts by measuring an experimental reflectance spectrum of the semiconductor. An analytical model of the semiconductor having a film layer, a transition layer and a substrate layer is then constructed. Next, optical constants n and k for the film layer, transition layer and substrate layer are expressed as a function of doping level. A profile of the transition layer is determined, and if an abrupt profile exists, the transition layer is not included in the semiconductor model.