Abstract: A Method for determining the material composition of a material sample which emits radiation comprises the following method steps: recording a spectrum of the energy deposited in a detector material by the radiation; determining a first energy deposited in a first energy range, a second energy deposited in a second energy range, and a third energy deposited in a third energy range; assigning a first colour parameter to the first deposited energy, a second colour parameter to the second deposited energy, and a third colour parameter to the third deposited energy; and comparing the assigned colour parameters with predetermined values for the colour parameters, the predetermined values typically corresponding to colour parameters of a predetermined material composition.

Abstract: A radiation detection system can include a photosensor to receive light from a scintillator via an input and to send an electrical pulse at an output in response to receiving the light. The radiation detection system can also include a pulse analyzer that can determine whether the electrical pulse corresponds to a neutron-induced pulse, based on a ratio of an integral of a particular portion of the electrical pulse to an integral of a combination of a decay portion and a rise portion of the electrical pulse. Each of the integrals can be integrated over time. In a particular embodiment, the pulse analyzer can be configured to compare the ratio with a predetermined value and to identify the electrical pulse as a neutron-induced pulse when the ratio is at least the predetermined value.

Abstract: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.

Abstract: The present invention includes an apparatus and method for neutron radiation detection. The apparatus comprises combining thin walled, boron-coated straw tubes with a plastic moderator material interspersed around the tubes. The method involves using such an apparatus through application of voltage to a central wire running inside the tubes and collecting electrical pulses generated thereby.

Abstract: An embodiment of the present disclosure provides a method and apparatus for neutron detection. The method comprises receiving neutrons into a number of sensing layers of a plurality of diodes of a number of arrays. Each diode has a sensing layer. A plurality of reactions between the neutrons and each sensing layer of the number of sensing layers are captured in a set of layers for each sensing layer in the number of sensing layers. Each sensing layer is located between the set of layers for each sensing layer. Each set of layers are intrinsic. The method also comprises generating a current pulse for each sensing layer of the number of sensing layers in response to capturing the result of a reaction between the neutrons and each sensing layer of the number of sensing layers.

Abstract: An auxiliary neutron detector apparatus designed for attaching and supplementation to an existing gamma-ray spectrometer adds improved neutron detection capabilities. The apparatus uses the existing detector and so does not require additional detector materials, including 3He, which are required by conventional neutron detector attachments. Because of the cost and limited availability of detector materials, this invention is particularly valuable for upgrading systems without existing neutron detector, and for repairing systems with damaged neutron detectors.

Abstract: A neutron detector and method of manufacture are provided. The neutron detector includes a sensing element structure having a substrate with a front surface and a back surface, opposite to the front surface. A semiconductor sensing element is fabricated in an active semiconductor layer on the front surface of the first substrate and is sensitive to a charged particle. A neutron conversion structure is attached to the back surface and includes neutron conversion material that emits the charged particle in response to a reaction with neutrons.

Abstract: A method for determining ionizing radiation including applying a constant voltage across an organic semiconducting material sensor prior to and after exposure of the sensor to the ionizing radiation; measuring and converting the current passing through the sensor proportional to the conductivity or resistivity of the sensor which in turn is proportional to the ionizing radiation in the sensor, into a proportional analog voltage value; and comparing the value obtained prior to and after exposure of the sensor to the ionizing radiation and computing the ionizing radiation based on the change in the value. An electronic device for determining ionizing radiation including an organic semiconductor resistor, a constant voltage source, and to a current to voltage converter, an analog to digital converter, and a microprocessor.

Abstract: A method is provided to detect neutrons using a boron-shielded gamma-ray detector, which will detect the 0.48-MeV prompt gamma ray due to the 10B (n,?)7Li reaction. The gamma ray detector can be a proportional gas counter, a scintillation based detector, or a semiconductor detector. Monoenergetic prompt gammas will produce a sharp peak in the pulse height spectrum of a gamma-ray spectroscopy detector. By surrounding a gamma detector with a layer containing 10B, we can measure the gamma signal and neutron signal at the same time and at the same physical location in an instrument. The approach can be used to measure neutron porosity simultaneous with gamma-ray counting or spectroscopy at the same location as long as the 0.48-keV gamma-ray from the neutron reaction does not interfere with the gamma-ray measurement.

Abstract: A neutron detector includes a microchannel plate having a structure that defines a plurality of microchannels, and layers of materials disposed on walls of the microchannels. The layers include a layer of neutron sensitive material, a layer of semiconducting material, and a layer of electron emissive material. For example, the layer of neutron sensitive material can include boron-10, lithium-6, or gadolinium.

Abstract: According to one embodiment, an apparatus for detecting neutrons includes an array of pillars, wherein each of the pillars comprises a rounded cross sectional shape where the cross section is taken perpendicular to a longitudinal axis of the respective pillar, a cavity region between each of the pillars, and a neutron sensitive material located in each cavity region.

Abstract: The present invention provides a method and an apparatus for calibrating a first self-powered neutron detector for long term use in a nuclear reactor core with a second self-powered neutron detector, where the emitter material of the second self-powered neutron detector has a neutron absorption cross-section that is greater than the neutron absorption cross-section of the first emitter material for the first self-powered neutron detector.

Abstract: Systems and methods are described herein for detecting particles emitted by nuclear material. The systems comprise one or more semiconductor devices for detecting particles emitted from nuclear material. The semiconductor devices can comprise a charge storage element comprising several layers. A non-conductive charge storage layer enveloped on top and bottom by dielectric layers is mounted on a substrate. At least one top semiconductor layer can be placed on top of the top dielectric layer. A reactive material that reacts to particles, such as neutrons emitted from nuclear material, can be incorporated into the top semiconductor layer. When the reactive material reacts to a particle emitted from nuclear material, ions are generated that can alter the charge storage layer and enable detection of the particle.

Abstract: An activation detector for fast-neutrons has a yttrium target exposed to a neutron source. Fast-neutrons which have energy in excess of 1 MeV (above a threshold energy level) generate gamma rays from a nuclear reaction with the yttrium, the gamma rays having an energy level of 908.96 keV, and the resultant gamma rays are coupled to a scintillator which generates an optical response, the optical response of the scintillator is coupled to a photomultiplier tube which generates an electrical response. The number of counts from the photomultiplier tube provides an accurate indication of the fast-neutron flux, and the detector is exclusively sensitive to fast-neutrons with an energy level over 1 MeV, thereby providing a fast-neutron detector which does not require calibration or the setting of a threshold.

Abstract: Neutron detection cells and corresponding methods of detecting charged particles that make efficient use of silicon area are set forth. Three types of circuit cells/arrays are described: state latching circuits, glitch generating cells, and charge loss circuits. An array of these cells, used in conjunction with a neutron conversion film, increases the area that is sensitive to a strike by a charged particle over that of an array of SRAM cells. The result is a neutron detection cell that uses less power, costs less, and is more suitable for mass production.

Abstract: Thermal Neutron Detector. The detector includes at least one semiconductor transistor within a circuit for monitoring current flowing through the semiconductor transistor. A film of gadolinium-containing material covers the semiconductor transistor whereby thermal neutrons interacting with the gadolinium-containing material generate electrons that induce a change in current flowing through the semiconductor transistor to provide neutron detection.

Abstract: A method for detecting neutron radiation in accordance with particular embodiments includes exposing a neutron detector array comprising at least one two-dimensional array of neutron detectors to a first scene of interest. The neutron detector array is based on at least one two-dimensional array of microbolometer detectors. The method also includes receiving a plurality of response values from a corresponding plurality of neutron detectors of the neutron detector array. The method further includes generating a comparison value based on the plurality of response values and a baseline response value. The method additionally, includes determining whether more than a first threshold amount of neutron radiation is being generated by the first scene based on the comparison value.

Abstract: An imaging device suitable for detecting certain imaging particles and recording the detection of imaging particles, and as such can include certain recording devices such as a charge storage structure.

Abstract: A neutron detector and method are provided. The detector includes a neutron conversion material that emits charged particles in response to a reaction with neutrons, a plurality of semiconductor sense elements that are sensitive to the charged particles, and a latch coupled to an output of semiconductor sense elements.

Abstract: A method of operating a radiation-detecting device includes charging a first charge storage region of a charge storage structure to place a first charge value at the first charge storage region, and charging a second charge storage region of the charge storage structure to place a second charge value at the second charge storage region. The method further includes conducting a first read operation to determine a change in the first charge value at the first charge storage region at a first time after charging the first charge storage region, and determining a first radiation flux value for an environment containing the charge storage structure based on the change in the first charge value at the first time.

Abstract: A detector for detecting neutrons includes a neutron reactive material interacting with neutrons to be detected and releasing ionizing radiation reaction products in relation to the interactions. It also includes a first semiconductor element being coupled with the neutron reactive material and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element for providing charge collecting areas for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges.

Abstract: In one embodiment, a neutron detector includes a three dimensional matrix, having nanocomposite materials and a substantially transparent film material for suspending the nanocomposite materials, a detector coupled to the three dimensional matrix adapted for detecting a change in the nanocomposite materials, and an analyzer coupled to the detector adapted for analyzing the change detected by the detector. In another embodiment, a method for detecting neutrons includes receiving radiation from a source, converting neutrons in the radiation into alpha particles using converter material, converting the alpha particles into photons using quantum dot emitters, detecting the photons, and analyzing the photons to determine neutrons in the radiation.

Abstract: A neutron detection system may include a volume of neutron moderating material, and a plurality of solid state neutron detection devices disposed within the volume of neutron moderating material, wherein some of the neutron detection devices suitable for transduction of primary reaction products resulting from a neutron interaction event, wherein some of the solid state neutron detection devices include two or more solid state neutron detection elements, and wherein the solid state neutron detection elements are configured for omnidirectional detection of impinging neutrons.

Abstract: A neutron porosity measurement device uses semiconductor detectors located at different distances from a cavity configured to accommodate a neutron source. Each of the semiconductor detectors includes (i) a semiconductor substrate doped to form a pn junction, and having microstructures of neutron reactive material formed to extend from a first surface inside the semiconductor substrate, and (ii) electrodes, one of which is in contact with the first surface of the semiconductor substrate and another one of which is in contact with a second surface of the semiconductor substrate, the second surface being opposite to the first surface. The electrodes are configured to acquire an electrical signal occurring when a neutron is captured inside the semiconductor substrate.

Abstract: A system includes emission of a first treatment beam associated with a first energy toward a neutron dose detector, determination of a first number of soft errors experienced by a semiconductor-based device exposed to neutrons generated by the first treatment beam, determination of a first neutron dose based on the first treatment beam using the neutron dose detector, and association of the first energy of the first treatment beam with the first number of soft errors and the first neutron dose. Some aspects include emission of a second treatment beam associated with the first energy toward a target, determination of a second number of soft errors experienced by the semiconductor-based device exposed to neutrons generated by the second treatment beam, and determination of a second neutron dose at the target based on the association between the first energy, the first number of soft errors and the first neutron dose.

Abstract: A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M12+, M22+, M32+, . . . )(G1V, G2V, G3V, . . . ) and exhibiting an antifluorite-type order, where Li=1, (M12++M22++M32++ . . . )=1, and (G1V+G2V+G3V+ . . . )=1. The material provides two useful characteristics: [1] a high Li-site density, which when enriched in 6Li, produces exceptional neutron-absorbing capabilities and [2] a semiconducting band-gap for the efficient conversion of absorbed photon and neutron energies into electrical currents. These characteristics can be exploited in applications for power generation or the spectroscopic detection of gamma and neutron radiation. The material can be tailored so as to detect only gamma photons, detect only neutron particles, or simultaneously detect gamma photons and neutron particles.

Abstract: A method includes detecting a neutron based on a time proximity of a first signal and a second signal. The first signal indicates detection of at least one of a neutron and a gamma ray. The second signal indicates detection of a gamma ray. The method further includes measuring an amount of detected gamma rays, for example, an amount different from an amount detected and associated with the second signal.

Abstract: The present invention provides a method and an apparatus for calibrating a first self-powered neutron detector for long term use in a nuclear reactor core with a second self-powered neutron detector, where the emitter material of the second self-powered neutron detector has a neutron absorption cross-section that is greater than the neutron absorption cross-section of the first emitter material for the first self-powered neutron detector.

Abstract: Neutron detection cells and corresponding methods of detecting charged particles that make efficient use of silicon area are set forth. Three types of circuit cells/arrays are described: state latching circuits, glitch generating cells, and charge loss circuits. An array of these cells, used in conjunction with a neutron conversion film, increases the area that is sensitive to a strike by a charged particle over that of an array of SRAM cells. The result is a neutron detection cell that uses less power, costs less, and is more suitable for mass production.

Abstract: A neutron detector that includes an anode and a cathode. The cathode includes at least one portion that has a porous substrate with surface segments that define open pores and a layer of neutron sensitive material on the surface segments of the porous substrate.

Abstract: A radiation detecting device is provided, according to which it is possible use only one radiation detecting device to measure radiation and measure gamma ray and neutron at once and discriminately in a restricted space. The radiation detecting device includes a radiation detecting unit to measure gamma ray and neutron discriminately at once, and a signal processing circuit which applies voltage to the neutron detecting unit and indicates measured gamma ray and neutron discriminately.

Abstract: A system, method, and floating intelligent perimeter sensor, provide protection for waterways and critical infrastructures. The system and method utilize one or more floating intelligent perimeter sensors to detect, and in some cases identify, hazardous materials associated with vessels in the waterways. The hazardous materials detected, and optionally identified, can include radiological materials, fissile materials, explosives, chemicals and biological materials (CBRNE). A set of radiation data associated with a radiation source in a vessel is received from the one or more floating intelligent perimeter sensors. At least one histogram is generated based on the set of radiation data. The at least one histogram is compared to multiple spectral images associated with known materials. The at least one histogram is determined to substantially match at least one of the multiple spectral images. A determination is made whether a material associated with the radiation source is a hazardous material.

Abstract: An apparatus (200) for detecting slow or thermal neutrons (160) including an alpha particle-detecting layer (240) that is a hydrogenated amorphous silicon p-i-n diode structure. The apparatus includes a bottom metal contact (220) and a top metal contact (250) with the diode structure (240) positioned between the two contacts (220, 250) to facilitate detection of alpha particles (170). The apparatus (200) includes a neutron conversion layer (230) formed of a material containing boron-10 isotopes. The top contact (250) is pixilated with each contact pixel extending to or proximate to an edge of the apparatus to facilitate electrical contacting. The contact pixels have elongated bodies to allow them to extend across the apparatus surface (242) with each pixel having a small surface area to match capacitance based upon a current spike detecting circuit or amplifier connected to each pixel.

Abstract: A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.

Abstract: A detector assembly for detecting radiation with angular resolution comprises at least one detector element, which comprises a front face and a rear face, a first detector material and a second detector material between the front face and the rear face, a space between the front face and the rear face of the detector element being filled by a plurality of regions of the first detector material and at least one region of the second detector material and each region connecting the front face to the rear face of the detector element; and radiation incident on the detector element through the front face being collimated by means of the detector materials.

Abstract: A detector (100) for detecting neutrons includes a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to the interactions with neutrons. The detector also includes a first semiconductor element (101) being coupled with the neutron reactive material (102) and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. The thickness of the first semiconductor element (101) is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.

Abstract: A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

Abstract: A system and method determine a direction associated with gamma and/or neutron radiation emissions. A first radiation photon count associated with a first detector in a detector set is received from the first detector. The first radiation photon count is associated with at least one radiation source. A second radiation photon count associated with a second detector in the detector set is received from the second detector. The first radiation photon count is compared to the second radiation photon count. One of the first detector and the second detector is identified to have detected a larger number of radiation photons than the other. The at least one radiation source is determined to be substantially in a direction in which the one of the first detector and the second detector that has detected the larger number of radiation photons is facing.

Abstract: A detector having a thin film of boron nitride (BN) such as cubic BN, and method, system and array utilizing same are provided. Solid-state p-i-n, deep depletion p-n and Schottky diode detector devices based on a thin film of semiconducting cubic BN are provided. Miniaturized solid-state detectors based on cubic boron nitride have a broad range of applications, both civilian and military.

Abstract: A detector for detecting SNM and or RDD radiation. The detector comprising: a plurality of elongated organic scintillator segments arranged in a side by side array; and at least one pair of light sensors optically coupled to ends of each of the scintillator segments such that they receive light from scintillations produced in the scintillator and generate electrical signals responsive thereto.

Abstract: A detector for detecting neutrons includes a neutron reactive material interacting with neutrons to be detected and releasing ionizing radiation reaction products in relation to the interactions. It also includes a first semiconductor element being coupled with the neutron reactive material and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element for providing charge collecting areas for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges.

Abstract: A detector (100) for detecting neutrons includes a neutron reactive material (102) adapted to interact with neutrons to be detected and release ionizing radiation reaction products in relation to the interactions with neutrons. The detector also includes a first semiconductor element (101) being coupled with the neutron reactive material (102) and adapted to interact with the ionizing radiation reaction products and provide electrical charges proportional to the energy of the ionizing radiation reaction products. In addition electrodes are arranged in connection with the first semiconductor element (101) for providing charge collecting areas (106) for collecting the electrical charges and to provide electrically readable signal proportional to the collected electrical charges. The thickness of the first semiconductor element (101) is adapted to be electrically and/or physically so thin that it is essentially/practically transparent for incident photons, such as background gamma photons.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Abstract: A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.

Abstract: The present invention provides an innovative solid-state neutron detector that exhibits superior neutron-sensitivities. One embodiment of the present invention includes a Gadolinium-oxide (Gd2O3)-based neutron detector that is highly sensitive to the presence of neutrons, and experiences significant changes in film conductivity, capacitance or both as a result of thermal neutron exposure thereby providing for detection of nuclear radiation.

Abstract: A neutron sensing material detector includes an anode; a cathode; and a semiconductor material disposed between the anode and the cathode. An electric field is applied between the anode and cathode. The semiconductor material is composed of a ternary composition of stoichiometry LiM2+GV and exhibits an antifluorite-type ordering, where the stoichiometric fractions are Li=1, M2+=1, and GV=1. Electron-hole pairs are created by absorption of radiation, and the electron-hole pairs are detected by the current they generate between the anode and the cathode. The anode may include an array of pixels to provide improved spatial and energy resolution over the face of the anode. The signal value for each pixel can be mapped to a color or grey scale normalized to all the other pixel signal values for a particular moment in time. A guard ring or guard grid may be provided to reduce leakage current.

Abstract: Non-streaming high-efficiency perforated semiconductor neutron detectors, method of making same and measuring wands and detector modules utilizing same are disclosed. The detectors have improved mechanical structure, flattened angular detector responses, and reduced leakage current. A plurality of such detectors can be assembled into imaging arrays, and can be used for neutron radiography, remote neutron sensing, cold neutron imaging, SNM monitoring, and various other applications.

Abstract: An instrument for detecting radiation is provided, which comprises an inner core housing a neutron detector, and an outer core comprising a neutron-moderating material, the instrument further including at least one elongate thermal neutron guide located within the outer core and having an inner end that terminates proximal to the neutron detector. In use, the elongate thermal neutron guide channels thermal neutrons towards the neutron detector. Also provided is a method for using said instrument.

Abstract: A system includes emission of a first treatment beam associated with a first energy toward a neutron dose detector, determination of a first number of soft errors experienced by a semiconductor-based device exposed to neutrons generated by the first treatment beam, determination of a first neutron dose based on the first treatment beam using the neutron dose detector, and association of the first energy of the first treatment beam with the first number of soft errors and the first neutron dose. Some aspects include emission of a second treatment beam associated with the first energy toward a target, determination of a second number of soft errors experienced by the semiconductor-based device exposed to neutrons generated by the second treatment beam, and determination of a second neutron dose at the target based on the association between the first energy, the first number of soft errors and the first neutron dose.

Abstract: A neutron detection structure built from a Silicon-On-Insulator memory cell includes a conversion layer for converting incident neutrons into emitted charged particles, a device layer for receiving the emitted charged particles, a buried oxide layer separating the conversion layer from the device layer and directly adjacent to the conversion layer and the device layer, an isolation layer, a passivation layer formed on the isolation layer opposite the device layer and buried oxide layer, a carrier adhered by an adhesion layer to the passivation layer opposite the isolation layer, and a plurality of conductive contacts to provide electrical contact to the device layer.