Abstract: A semiconductor infrared detector includes in the following order: a semiconductor substrate; a layer of electrically insulating material; and patterns formed in a semiconductor layer. The patterns are formed from at least one island that is connected to bridges which are connected to polarization electrodes. The bridges are lines having an approximately constant width lp and the islands are zones having a width li that is greater than that of the lines.

Abstract: An active pixel sensor is disclosed. In one embodiment, a solid state radiation detection unit may be fabricated using a semiconductor substrate having a plurality of CMOS pixel circuits incorporated into the substrate. Typically, each of an array of pixel circuits includes a charge collecting pixel electrode, a charge sensing node, a gate bias transistor separating the charge collecting pixel electrode and the charge sensing node, and a pixel capacitor to store charges collected by the charge collecting pixel electrode. A charge measuring circuit comprising at least one transistor may also be configured with each pixel circuit. The sensor may further include a radiation absorbing layer comprised of photoconductive material, as well as a surface electrode layer comprised of electrically conducting material. The sensor is typically configured with an array measurement circuit for measuring charges collected by the array of charge collecting pixel electrodes and for pixel data output.

Abstract: An image detector using arrays of photodiodes, and in particular to a radiological image detector. In the image detector, all the photodiodes of one and the same array are linked to adapter amplifiers embodied in the form of at least one integrated circuit. In each integrated circuit, an adapter amplifier, to which no photodiode is linked, delivers a voltage serving as a reference to define a bias voltage to be applied to the photodiodes. This arrangement makes it possible in particular to associate photosensitive arrays with amplifiers exhibiting different voltage thresholds.

Abstract: A semiconductor device is provided which comprises a thin film transistor (TFT) comprising a gate electrode formed on an insulating substrate, a gate insulating film formed on the gate electrode, and a pair of electrodes having a semiconductor layer and an ohmic contact layer therebetween; and a gate wiring connected to the gate electrode, and a signal wiring connected to one of the pair of electrodes, wherein the gate wiring and the signal wiring are arranged in superposition in the film thickness direction with an interlayer insulating layer therebetween to have a plurality of crossings with each other and the interlayer insulating layer has a plurality of steps overstriding a lower wiring at the crossings. A radiation detection device and a radiation detection system that have the semiconductor device are also provided.

Abstract: To prevent an output voltage from lowering due to increase of a parasitic capacitance when arranging a plurality of photoelectric conversion elements, a photoelectric conversion element, a reading field-effect transistor having a gate for receiving signal charges generated in the photoelectric conversion element and a source and a drain for reading a signal corresponding to signal charges accumulated in the gate, selection switch means set between the reading field-effect transistor and a power supply, and reset means for resetting the gate are provided on an insulating support body.

Abstract: A photoelectric semiconductor light-detection system with programmable dynamic performance includes a semiconductor photocell, preferably a photodiode, by which the impinging light intensity can be converted into a proportional photoelectric current. Thc drain of a first MOS FET of corresponding channel-type operated to saturation is coupled to the semiconductor photocell, e.g., the cathode or anode of the photodiode, and its source is maintained at a constant potential. A second MOS FET applies a predetermined variable charge amount to the gate of the first MOS FET. A capacitor is provided at the gate of the first MOS FET. The difference between the offset current and the photoelectric current can be integrated by an integration device. A third MOS FET can be operated as a switch to read the integration device and to reset it at a given value.

Abstract: A method of forming a SIMS monitor device for determining a doping profile of a semiconductor device structure including providing a plurality of regularly repeating semiconductor structures including a doping profile to form a monitor device including at least one layer of the regularly repeating semiconductor structures; planarizing the monitor device through a thickness of the regularly repeating semiconductor structures to reveal a target surface overlying the doping profile to form a monitor pattern; and, sputtering the target surface over a sputtering area including the monitor pattern through a thickness thereof while simultaneously detecting and counting over a time interval at least one type of species ejected from the target surface according to a secondary ion mass spectroscopy procedure (SIMS).

Abstract: An X-ray detector includes an array of X-ray sensitive sensors, each sensor including a conversion element which converts incident X-rays into electric charge pulses. The X-ray detector also includes an evaluation unit which is electrically connected to the conversion element in order to receive and evaluate the electric charge pulses. In order to form an X-ray detector which exhibits a high degree of linearity over a large dynamic range in conjunction with a higher maximum count rate and in order to avoid falsification of the calculated image by multiple counting of X-ray quanta, the evaluation unit includes a current/frequency converter as well as an electronic counter which is electrically connected thereto. The electric charge pulses from the conversion element are applied to the input of the current/frequency converter whose output pulses are applied to the electronic counter.

Abstract: To provide a radiographic image pickup apparatus comprising a substrate, a plurality of pixels each of which is constituted by an MIS-type photoelectric conversion device and a switching device, the pixels being two-dimensionally arranged on the substrate, a plurality of control wirings connected to control electrodes of the switching devices, a plurality of signal wirings for reading signals from the MIS-type photoelectric conversion devices, and second switching unit for switching a bias for turning on the switching device to at least one of a first bias and a second bias.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.

Abstract: A low-energy particle sensor includes current collection areas which take the form of diodes partially covering the substrate. In detection areas defined alongside the collection areas the small thickness of the material enables low-energy particles (in particular a particles or protons) to penetrate the substrate. The currents generated by particles forming electron-hole pairs in this substrate are collected by the diode regions and sent to a load circuit. Applications include sensors for detectors of products resulting from collisions brought about in particle physics research apparatus.

Abstract: A two-dimensional image detector that allows charges generated by each photoconductor particle to be smoothly transmitted through a photoconductive layer and thereby ensures effective transmission of charges generated in the photoconductive layer to an active matrix substrate. A two-dimensional image detector of the present invention includes at least an active matrix substrate 1 having a plurality of pixel electrodes 10, and a photoconductive layer 2 laminated on the pixel electrodes 10. The photoconductive layer 2 is composed of a particulate photoconductor, and a binder containing a resin that renders volumetric shrinkage upon reaction. In other words, the foregoing binder contains either (i) a resin that undergoes volumetric shrinkage when it reacts per se (polymerization, cross-linking, or decomposition), (ii) a polymerizable monomer to form a resin, or (iii) a solvent along with the foregoing resin or polymerizable monomer.

Abstract: The invention relates to a Raman endoscope for diagnosing diseased tissue within the human body. An infrared sensitive array is used to form spectroscopy enhanced images of tissue where laser induced Raman scattering is used to identify and quantitatively measure constituents of diseased and healthy tissue.

Abstract: A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an entrance window for light, x-ray, gamma ray and/or other particles. The back-side has an array of individual ohmic contact pixels. Each of the ohmic contact pixels on the back-side may be surrounded by a grid or a ring of junction separation implants. Effective pixel size may be changed by separately biasing different sections of the grid. A scintillator may be coupled directly to the entrance window while readout electronics may be coupled directly to the ohmic contact pixels. The detector array may be used as a radiation hardened detector for high-energy physics research or as avalanche imaging arrays.

Abstract: A multi-wavelength semiconductor image sensor comprises a p-type Hg0.7Cd0.3Te photo-absorbing layer formed on a single crystal CdZnTe substrate, a CdTe isolation layer deposited on the photo-absorbing layer, a p-type Hg0.7Cd0.23Te photo-absorbing layer deposited on the CdTe isolation layer, n+ regions which are formed in these photo-absorbing layers and form a pn-junction with each of these photo-absorbing layers, an indium electrode connected to each of these n+ regions and a ground electrode connected to the photo-absorbing layer, the semiconductor isolation layer being electrically isolated from the photo-absorbing layer.

Abstract: A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.

Abstract: An intraoperative probe system for preferentially detecting beta radiation over gamma radiation emitted from a radiopharmaceutical is described. In one embodiment, the probe system of the present invention is a probe having an ion-implanted silicon charged-particle detector for generating an electrical signal in response to received beta particles. In such an embodiment, a preamplifier may be located in close proximity to the detector filters and amplifies the electrical signal. Furthermore, a wire may be used to couple the probe to a processing unit for amplifying and filtering the electrical signal, and a counter may be utilized to analyze the resulting electrical signal to determine the number of beta particles being received by the detector. Alternatively, the wire can be replaced with an infrared or radio transmitter and receiver for wireless operation of the probe.

Abstract: A pixel sensor system that includes a photo-sensor, an output amplifier, and a feedback capacitor. The photo-sensor is configured to receive photons and to convert the photons into charge. The output amplifier has at least two transistors in a cascoded configuration. The amplifier converts the charge into electronic signal. The feedback capacitor is disposed between the photo-sensor and an input of the output amplifier.

Abstract: The invention relates to a circuit for reading charges comprising a capacitive means (C1, C2) with capacitance Ca to store charges and means of reading a voltage sampled at the terminals of the capacitive means. The capacitive means is built up from a first capacitive means (C1) and a second capacitive means (C2) with a capacitance Cb less than Ca. The read circuit comprises means of comparing the voltage read at the terminals of the capacitive means with a threshold value (Vthreshold) and means of controlling the transfer of charges stored in the first capacitive means to the second capacitive means when the voltage read at the terminals of the capacitive means exceeds the threshold value (Vthreshold).

Abstract: A glass substrate has formed on a front side thereof pixels each including a photoelectric conversion device, a capacitor and a TFT, and signal lines for reading signals via TFT's of the pixels, and on a back side thereof vertical selection lines for selecting the pixels, and has provided therethrough electric contacts for interconnection between gates of the TFT's and the vertical selection lines. The signal lines and the vertical selection lines are in a crossing relationship at thickness distance across the substrate, with reduced wiring capacities therebetween.

Abstract: A solid state X-ray detector (106) is disclosed which is comprised of a plurality of Spherical ICs (202)-(208) disposed on a substrate (210). The Spherical ICs each have a plurality of detector picture elements (pixels) (302) disposed on the surface thereof. Each of the pixels (302) is formed from a layer of hydrogenated amorphous silicon (502) with a heavy metal layer (504) of molybdenum (Mo) disposed thereon as the cathode and a metal layer (508) disposed on the lower surface thereof. The cathode is reverse biased and X-rays impinging thereon will cause a transfer of electron-holes to the lower plate, which are stored on a capacitor (608). The electrons are accumulated over a predetermined period of time and then sampled and processed for output on a display (12) in real time or for storage of a digital value in a memory (114).

Abstract: The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to detect very low-energy particles that penetrate less than 1.0 nm into the CCD, including electrons having energies less than 1000 eV and protons having energies less than 10 keV.

Abstract: If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confirm as a whole that the alignment of a multiplicity of components disposed over a distance has been correctly adjusted. This problem is overcome by using a semiconductor light-receiving element with a structure which absorbs only some of a received laser light beam and which allows the greater part of the beam to be transmitted to its rear face.

Abstract: An imaging array of photodiodes on a chip cut from a semiconductor wafer includes a guard diode at each cut edge to reduce leakage current from the cut edges when the imaging array is in use. The photodiodes and guard diode may be fabricated from the same materials during the same process step. Electrical contacts coupled to the imaging array provide a mechanism for applying a reverse electrical bias to the photodiodes and guard region with respect to the wafer.

Abstract: In a radiation image data obtaining method and a radiation image data obtaining apparatus, quality degradation at the periphery of an image is prevented after subtraction processing. Radiation emitted from a radiation source and having passed through a subject is irradiated onto a detector. An image signal in accordance with the intensity of the radiation is output from a detection layer at the front. Meanwhile, a portion of the radiation which has not been converted into visible light by a scintillator out of the radiation irradiated onto the detection layer passes through the detection layer and reaches another detection layer at the rear. An image signal is output from the layer at the rear. The image signal from the rear is input to size correction means and a size correction operation is carried out in the means so that the sizes of images represented by the image signal from the front and an image signal after the correction agree.

Abstract: A cooling mechanism and device for digital x-ray imagers. The x-ray imager is positioned on a thermal spreader plate which in turn is positioned on a thermoelectric cooler. The thermal spreader plate is the prime thermally conductive interface between the x-ray imager and the cooled surface of the thermoelectric heat pump/cooler. The device maintains the x-ray imager at a constant temperature with a small and consistent uniform temperature gradient across its bottom surface.

Abstract: A direct conversion digital x-ray detector is provided with inherent high voltage protection for static and dynamic imaging. The detector has an n-channel active matrix TFT array, a coplanar photoconductor structure and a high voltage biasing electrode. In order to achieve high voltage protection, the biasing electrode is set to a negative potential and the TFT “off” gate voltage is set to a predetermined negative value, such that the TFT is essentially non-conductive.

Abstract: A photo-EMF detector for the collection of photons includes a substrate formed of a photorefractive semiconductor and a plurality of interlaced electrode pairs disposed over the substrate. Each electrode pair includes two parallel electrodes defining an active area therebetween for the collection of photons. One electrode of each pair is disposed between an adjacent pair of electrodes and proximate one electrode of the adjacent pair, light from striking a substrate surface between proximate electrodes and outputs from each of the plurality of interlaced electrode pairs are collected.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.

Abstract: A novel semiconductor detector device, consisting of several layers of two dimensional detector modules each module being divided into an array of separate detector cells by means of the pixelation of the electrodes on the surfaces of the modules. The superimposed detector cells in equivalent positions in each layer are in electrical contact with those in the two immediately adjacent layers, such that the whole device effectively becomes a two dimensional array of stacks of individual detector cells, with a common bottom electrode. Current in each detector cell stack, induced by the absorption of a high energy photon in that stack, is measured by means of an integrating charge sensitive amplifier attached to each anode at the top of each cell stack.

Abstract: The back surface of a thinned charged-coupled device (CCD) is treated to eliminate the backside potential well that appears in a conventional thinned CCD during backside illumination. The backside of the CCD includes a delta layer of high-concentration dopant confined to less than one monolayer of the crystal semiconductor. The thinned, delta-doped CCD is used to determine the energy of a very low-energy particle that penetrates less than 1.0 nm into the CCD, such as a proton having energy less than 10 keV.

Abstract: Ultra-thin ionizing radiation detector, and processes of manufacturing such detector. The detector includes a stack made up of a substrate, an insulting layer and a thin superficial layer of silicon, a detection diode being fabricated in the superficial layer.

Abstract: A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

Abstract: An image detection device having pixel electrodes arrayed in a matrix in an image detection area on one face of an insulating film. A shield electrode is disposed in the peripheral area on the outside the detection area, and a driving circuit for driving the pixel electrodes and wires connecting the pixel electrodes are provided on the other face of the insulating film. The driving circuit may be provided in the peripheral area. The wires disposed in the peripheral area are shielded by the shield electrode to prevent electrostatic breakdown even when a large current flows through a photoelectric converting film, thereby to improve reliability by preventing dielectric breakdown and to accommodate a large dynamic range of incident light.

Abstract: An X-ray imaging system includes an X-ray sensor having an imaging section for picking up an X-ray image, and a controller for controlling the X-ray sensor and processing an image supplied by the X-ray sensor. The X-ray sensor has a non-volatile storage device for storing information by which the controller specifies conditions of imaging performed by the imaging section, and the controller has a decision unit for reading out the information stored on the non-volatile storage device and deciding, on the basis of the information, a method of controlling the X-ray sensor and/or content of processing executed by the controller.

Abstract: A hyperspectral radiation detector system collects infrared radiation concurrently from a plurality of adjacent infrared spectral bands. A collector system includes an optical train for receiving the incoming radiation, a disperser for separating the received infrared radiation into multiple adjacent bands of interest and a focal plane array for detecting the individual infrared bands and producing corresponding output signals. The focal plane array is an enhanced quantum well infrared photodetector having multiple physical dimensions of each detector varied in a predetermined manner to alter the frequency of responsivity of the detector to form the multi-band pixels of the received image. The output signals from the array can be processed as required to review selected bands of interest or to determine if certain types of targets are present within the received radiation.

Abstract: A flat panel detector for radiation imaging includes an array of transistor switches each of which is associated with a pixel electrode. A radiation transducer including a top electrode and a radiation conversion layer is disposed over the array. Inhibiting mechanisms are positioned over dead zones between adjacent pixel electrodes to inhibit the accumulation of charge in the radiation conversion layer at the dead zones when the top electrode is biased and the flat panel detector is exposed to radiation. In one embodiment, the inhibiting mechanism is constituted by islands formed of semiconductor material between the array and the radiation transducer. Each island is positioned over a dead zone between adjacent pixel electrodes and contacts a pixel electrode to allow charges accumulated on the islands to drift to the pixel electrodes.

Abstract: An insulated gate field effect transistor dosimeter has a source and drain defining a channel region, a floating gate having a first portion extending over the channel region, and a second, larger portion extending away from said region, a control gate having at least a portion thereof overlapping a first part of the floating gate, and a charging gate overlapping a second part of the floating gate. The area of the second part of the floating gate is much smaller than the area of the first part, and the charging gate is separated from the channel region by the control gate. The dosimeter is charged, before irradiation, by connecting the source, drain and control gate to a common ground and applying a potential difference between the charging gate and the common ground. The charge is supplied to the floating gate by a path which does not require a significant electric stress to be created in the region of the gate oxide and the channel.