Abstract: An X-ray detector is provided. The X-ray detector includes multiple detector sub-modules. Each detector sub-module includes a semiconductor layer and multiple detector elements. A plurality of detector elements is disposed on the semiconductor layer. Wiring traces extending from the plurality of detector elements to readout circuitry, where each detector element is coupled to a respective wiring trace. The wiring traces are routed within a gap between adjacent detector elements of the plurality of detector elements. Processing circuitry is configured to perform coincidence detection to determine which detector element of the plurality of detector elements is associated with a location of an X-ray hit when the X-ray coincidently hits one of the detector elements of the plurality of detector elements and one or more of the wiring traces coupled to respective detector elements of the plurality of detector elements.

Abstract: The disclosure provides a processing circuit adapted to read out a sensing voltage of an X-ray sensor and a signal processing method of a sampling circuit. The processing circuit includes an amplifier and the sampling circuit. An inverting input terminal of the amplifier is coupled to the X-ray sensor. The sampling circuit is coupled to an output terminal of the amplifier. The sampling circuit obtains a first voltage, a second voltage, and a sampling voltage of the X-ray sensor in different periods. The sampling voltage is between the first voltage and the second voltage. In the readout period, the sampling circuit subtracts the second voltage from the sampling voltage to obtain a third voltage, subtracts the second voltage from the first voltage to obtain a fourth voltage, and divides the third voltage by the fourth voltage to read out the sensing voltage of the X-ray sensor.

Abstract: Detectors and detection systems are disclosed. According to certain embodiments, a detector comprises a substrate comprising a plurality of sensing elements including a first sensing element and a second sensing element, wherein at least the first sensing element is formed in a triangular shape. The detector may include a switching region configured to connect the first sensing 5 element and the second sensing element. There may also be provided a plurality of sections including a first section connecting a first plurality of sensing elements to a first output and a second section connecting a second plurality of sensing elements to a second output. The section may be provided in a hexagonal shape.

Abstract: For controlling reconstruction in emission tomography, the quality of data for detected emissions and/or the application controls the settings used in reconstruction. For example, a count density of the detected emissions is used to control the number of iterations in reconstruction to more likely avoid over and under fitting. The count density may be adaptively determined by re-binning through pixel size adjustment to find a smallest pixel size providing a sufficient count density. As another example, the detected data may have poor quality due to motion or high body mass index (BMI) of the patient, so the reconstruction is set to perform differently (e.g., less smoothing for high motion or a different number of iterations for high BMI). The quality of the data may be used in conjunction with the application or task for imaging the patient to control the reconstruction.

Abstract: Provided are an underwater radiation monitoring system and method. The monitoring system includes a plurality of sensors configured to measure a value of underwater radiation in a measurement area in which underwater radiation is to be measured, the plurality of sensors being installed in the measurement area by being arranged in a form which is set on the basis of information about the measurement area; and an electronic device configured to identify a value of underwater radiation in the measurement area on the basis of the values of underwater radiation measured by the plurality of sensors, wherein at least one first sensor among the plurality of sensors is connected to the electronic device to collect measured values obtained from the at least one first sensor and a plurality of second sensors excluding the at least one first sensor and to transmit the collected measured values to the electronic device.

Abstract: Disclosed herein is a radiation detector system, comprising a radiation detector, the radiation detector comprising a semiconductor substrate and a pixel array in the semiconductor substrate, wherein the pixel array comprises (a) M first-row pixels, and (b) N second-row pixels, both M and N being positive integers and greater than 1, and wherein each pixel of the N second-row pixels is larger than any pixel of the M first-row pixels in a radiation direction perpendicular to a straight line segment having a first end in a first-row end pixel of the M first-row pixels and a second end in a second-row end pixel of the M first-row pixels.

Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.

Abstract: In an X-ray scanning apparatus including a photon counting type X-ray detection element, in order to perform counted number correction specialized for pile-up with high accuracy, the X-ray scanning apparatus includes an X-ray detector in which a plurality of photon counting type X-ray detection elements are disposed, each of the X-ray detection elements detecting an incident X-ray photon, classifying energy of the X-ray photon into two or more energy ranges, and counting the X-ray photon, and a correction unit that corrects the counted number in the X-ray detection element, in which the correction unit includes a counting error amount determination part that determines a counting error amount in a counted number due to pile-up according to a pile-up occurrence probability in two or more X-ray photons.

Abstract: An imaging and pulse detection pixel and an array of imaging and pulse detection pixels are provided. Each imaging and pulse detection pixel includes an optical detection device connected directly to a first and second transistor only, a pulse detection circuit that operates on the signal read out from the optical detection device and outputs a pulse detection output signal suitable for detection of pulses, and an imaging circuit that operates on a signal read out from the optical detection device and outputs an image output signal suitable for generation of an image. A terminal of the optical detection device is directly connected to only a gate terminal of the first transistor and a non-gate terminal of the second transistor.

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.

Abstract: An imaging device for electromagnetic radiation, especially for x-ray and/or gamma radiation, is disclosed. In an embodiment, the imaging device includes a layering including a number of detection elements, a number of read-out boards and a base board. Each of the detection elements is electrically contacted with a respective read-out board via a plurality of first solder contacts. Each read-out board includes a plurality of through-contacts and is electrically contacted with the base board via a plurality of second solder contacts.

Abstract: An imaging and pulse detection (IPD) pixel array includes a plurality of imaging pixels arranged in a plurality of rows and columns. Each imaging pixel includes a respective photodetector that outputs signals in response to incident light and input laser pulses. The signals include imaging signals that correspond to the incident light and pulse signals that correspond to the input laser pulses. The IPD array further includes an isolation circuit associated with each of the respective imaging pixels, each isolation circuit outputting filtered output pulse signals in response to receiving the signals from the associated imaging pixel, the filtered output pulse signals corresponding to the pulse signals. The IPD array further includes a single pulse detection circuit that toggles between a charged and uncharged state corresponding to a pulse being received from at least one of the isolation circuits.

Abstract: An imaging pixel is provided. The imaging pixel includes a photodetector that outputs charge signals in response to incident light and laser pulses and a high-frequency path. A detector biasing circuit is further provided that biases high-frequency signals of the charge signals that are associated with the laser pulses to follow the high frequency path. The detector biasing circuit effectively filters low-frequency signal components of the charge signals from following the high-frequency path.

Abstract: A particle beam sensor comprising: scattering means providing a surface for intercepting obliquely a path of a particle beam thereby to permit a scattering of particles from the particle beam by the scattering means; sensor means responsive to receipt of one or more said scattered particles to generate a sensor signal; aperture mask means arranged between the scattering means and the sensor means to present to the scattering means a screen opaque to said scattered particles and having at least one aperture through which an unobstructed view of the scattering means is provided to the sensor means, the aperture (s) thereby permitting selection of all of those particles scattered by the scattering means which may be used to form at the sensor means an image representative of at least a part of a foot print cast by the particle beam upon the scattering means. By scattering particles from a sectional area of a particle beam, scattered beam particles can be used more efficiently compared to existing techniques.

Abstract: The invention concerns a method of real-time mapping of a presence distribution of a source of photons in a site, the method comprising the steps consisting of measuring (100), at a plurality of measurement points, a photon flux in an energy band-width determined with a spectrometric detector, and noting the geographical co-ordinates of said point, and, at each measurement point, —from a response function of the detector, and information on the site, establishing a distribution of origins (200) of the photons around the measurement point, —from the distributions, representing (300), on a map of the site, a distribution of origin of photons, the method further comprising, for each measurement point starting from the second, a step (250) prior to the representing step (300), during which the distributions of origins of the photons around the current measurement point are correlated with those of previous measurement points.

Abstract: A single-photon receiver is presented. The receiver comprises two SPADs that are monolithically integrated on the same semiconductor chip. Each SPAD is biased with a substantially identical gating signal. The output signals of the SPADs are combined such that capacitive transients present on each output signal cancel to substantially remove them from the output signal from the receiver.

Abstract: An X-ray analysis apparatus converts an X-ray intensity distribution of discrete data determined for each pixel, from a first plane where the distribution is known into a second plane where the distribution is not known. The X-ray analysis apparatus projects onto the second plane, a grid point which specifies a pixel on the first plane and an intermediate point between the grid points, as nodes, calculates an area of a region where a polygon expressing a projected pixel specified by the projected nodes overlaps with each pixel on the second plane, to thereby calculate an occupancy ratio of the polygon expressing the projected pixel to each pixel on the second plane and distributes X-ray intensity in the pixel on the first plane to the pixel on the second plane based on the occupancy ratio, to thereby convert the X-ray intensity distribution.

Abstract: A method is provided for detecting x-ray quanta incident on a multi-pixel x-ray detector having a two-dimensional matrix composed of measurement-signal-generating pixels, wherein the multi-pixel x-ray detector is embodied as a direct solid-state detector, wherein the pixels, which generate a measurement signal within a predefined time interval and which in addition lie in a contiguous cluster composed of a plurality of pixels, are assigned to an event cluster by an evaluation unit and wherein their measurement signals are drawn upon for the purpose of approximating the position at which the x-ray quantum interacted with the multi-pixel x-ray detector.

Abstract: A radiographic apparatus includes an X-ray detection sensor having a two-dimensional detector plane for detecting an intensity distribution of X-rays, a body internally containing the X-ray detection sensor, a supporting member having a supporting surface for supporting the X-ray detection sensor across the detector plane and which fixes the X-ray detection sensor to an inner bottom surface of the body, and a circuit board on which is mounted a circuit for reading out a detection signal from the X-ray detection sensor. Furthermore, in the radiographic apparatus, the supporting member forms a space between the supporting member and the inner bottom surface of the body in a peripheral portion of the supporting member. At least a part of the circuit board is arranged in the space.

Abstract: A detector array (110) includes a detector (112) configured to detect ionizing radiation and output a signal indicative of the detected radiation, wherein the detector at least includes a semiconductor element (118) and an illumination subsystem (120) configured to generate and transfer sub-band-gap illuminating radiation to selectively illuminate only a sub-portion of the semiconductor element in order to produce a spatially patterned illumination distribution inside the element.

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: An electronic device to simply and efficiently measure energy of incident photons in a very short time and with a very high count rate and high precision, starting from current pulses from an ionizing electromagnetic radiation detector, the electronic device including an analog delay line with switched capacitors with controlled loss at an output from a charge preamplifier.

Abstract: The application describes an X-ray detector for use in a medical equipment, wherein the detector comprises an unit for transforming X-ray radiation into electrical charge, a first capacitor for being charged by an electrical charge, wherein the first capacitor is electrically connected to the unit for transforming, a second capacitor for being charged by an electrical charge, and a first gain switching gate, wherein the second capacitor is electrically connected with the unit for transforming if the first gain switching gate is in on-state, wherein the detector is adapted to switch on the first gain switching gate for short periods. Further the application describes an X-ray system comprising a detector according to the invention, wherein the system is adapted for gain selection, wherein the detector is adapted to switch on the first gain switching gate for short periods.

Abstract: A spatially-aware radiation probe system/method allowing for detection and correction of radiation readings based on the position and/or movement of a radiation detector is disclosed. The system incorporates a radiation detector combined with a spatially-aware sensor to permit detection of spatial context parameters associated with the radiation detector and/or object being probed. This spatial context information is then used by analysis software to modify the detected radiation values and/or instruct the radiation probe operator as to appropriate measurement activity to ensure accurate radiation measurements. The spatially-aware sensor may include but is not limited to: distance sensors to determine the distance between the radiation detector and the object being monitored; accelerometers integrated within the radiation detector to detect movement of the radiation detector; and/or axial orientation sensors to determine the axial orientation of the radiation detector.

Abstract: A high-energy radiation detector apparatus, comprising a high-energy radiation detector substrate and a plurality of charge collection electrodes operatively coupled to first and second opposing sides of the detector substrate is disclosed. Charge collection circuitry is associated with the plurality of charge collection electrodes for collecting charge induced on the charge collection electrodes by a high energy radiation photon interaction event caused by high-energy radiation incident on the detector substrate.

Abstract: Embodiments of the present invention provide a computer-implemented method for parallel readout for an X-ray image sensor module having a pixel array. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: generating a pixel data for each pixel within a respective pixel row of the pixel array based on a photon count; receiving a first serial pixel data, wherein the first serial pixel data comprises pixel data from a plurality of pixels of a first column; receiving a second serial pixel data, wherein the second serial pixel data comprises pixel data from a plurality of pixels of a second column; and shifting the first serial pixel data from the first column register to the second column register.

Abstract: An X-ray image pickup system includes an X-ray image pickup apparatus having a sensor unit having photoelectric conversion elements arranged in a two-dimensional matrix form, the sensor unit configured to acquire an electric signal corresponding to the intensity of an X-ray generated from an X-ray source by the photoelectric conversion elements and output electric signals as pixel data, an electric circuit configured to perform processing including driving the sensor unit, wiring configured to mutually connect the sensor unit and the electric circuit, and one or more loop circuits each having a loop-shaped conductor and being connected to at least one of an internal component of the electric circuit and the wiring, and a selection unit configured to perform at least one of selection of a loop circuit to be connected among the loop circuits and selection of a state of the loop circuit to be connected.

Abstract: A system for sanitizing an enclosed structure has a plurality of sensors, a germicidal ultraviolet light source, and a controller. A first sensor detects the presence of humans or animals within the enclosed structure, and a second sensor detects the position of at least one door of the enclosed structure. The ultraviolet light source provides electromagnetic radiation in the ultraviolet range. The controller receives inputs from the first and second sensors and instructs emission or cessation of emission of the electromagnetic radiation based on the received input.

Abstract: An FPD has plural pixels arranged in two dimensions. The pixels include a short pixel directly connected to a signal line, and a comparative pixel connected to another signal line through a TFT. In irradiation detecting operation, a control section monitors a voltage signal from the short pixel. When the voltage signal is a predetermined threshold value or more, the control section detects the start of X-ray irradiation, and provisionally starts charge accumulation operation. Then, the control section calculates the difference in the voltage signal between the short pixel and the comparative pixel. When this difference is another threshold value or more, the detection of the start of X-ray irradiation is judged to be valid. When the difference is less than the threshold value, the detection is judged to be misdetection caused by shock noise. The charge accumulation operation is aborted, and the irradiation detecting operation is restarted.

Abstract: A single-photon receiver is presented. The receiver comprises two SPADs that are monolithically integrated on the same semiconductor chip. Each SPAD is biased with a substantially identical gating signal. The output signals of the SPADs are combined such that capacitive transients present on each output signal cancel to substantially remove them from the output signal from the receiver.

Abstract: The present invention introduces a detector that is able to detect single microwave photons propagating in a waveguide. The waveguide of the invention is lowered to a temperature where it becomes superconductive. Disposed between a middle wire and a ground plane of the waveguide is a very small piece of a desired normal metal, whereby so-called SN contacts are formed between these materials. A separate reflection measurement circuit is coupled to the normal metal piece. When the impedance of the waveguide is matched to the impedance of the normal metal piece as well as possible, a photon propagating in the waveguide is most likely absorbed in the normal metal. The absorption slightly raises the temperature of the piece, which further changes the impedance observed in a so-called SIN junction between the reflection measurement circuit and the piece.

Abstract: Among other things, one or more systems and/or techniques for integrating electrical charge yielded from an indirect conversion detector array of a pulsating radiation system are provided. The integration begins during a resting period between a first and second pulse and ends before the second pulse is emitted. Electrical charge that is measured during a resting period is integrated, while electrical charge measured during a pulse is not integrated. In this way, parasitic contributions caused by the direct interaction of radiation photons with a photodiode are reduced and a quantum efficiency of the indirect conversion detector array is increased, for example. Moreover, the period of integration can be adjusted such that a voltage gain related to the indirect conversion detector array can be varied to a predetermined level.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A demodulation sensor (30) is described for detecting and demodulating a modulated radiation field impinging on a substrate (31). The sensor comprises the means (1,7,15) for generating, in the substrate, a static majority current assisted drift (Edrift) field, at least one gate structure (33) for collecting and accumulating minority carriers (21), the minority carriers generated in the substrate by the impinging radiation (28) field. The at least one gate structure comprises at least two regions (4,9,18) for the collection and accumulation of the minority carriers (21) and at least one gate (5,6,8) adapted for inducing a lateral electric drift field under the gate structure, the system thus being adapted for directing the minority carriers (21) towards one of the at least two regions (4,9) under influence of the static majority current assisted drift field and the lateral electric drift field induced by the at least one gate, and a means for reading out the accumulated minority carriers in that region.

Abstract: Embodiments of the present invention provide a computer-implemented method for determining an amplification gain for an X-ray image sensor module. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: capturing an electrical signal by a pixel sensor; and determining an amplification gain of the electrical signal at a charge sensitive amplifier by turning a switch on or off, wherein the switch connects the pixel sensor to a capacitor.

Abstract: An x-ray detector and its pixel circuit are described, that allow to cover a large dynamic range with automatic selection of the sensitivity setting in each pixel, thus providing improved signal to noise ratio with all exposure levels. X-ray detectors are required to cover a large dynamic range. The largest exposure determines the required pixel capacitance. However, a large pixel capacitance gives a bad signal to noise ratio with small exposures e.g. in the dark parts of the image. This invention disclosure describes several approaches to provide automatic sensitivity selection in the pixels. This ensures that low signals are stored in a small capacitor or read out with a high sensitivity with corresponding good signal to noise ratio, while larger signals are stored in larger capacitors or are read out with lower sensitivity so that no information is lost.

Abstract: A radiographic imaging device that may detect irradiation states of radiation is provided. Pixels for radiation detection that are provided in a radiation detector of an electronic cassette are configured with characteristics thereof being alterable. The characteristics are set in accordance with the imaging conditions of a radiation image by a cassette control section of the electronic cassette.

Abstract: Embodiments of the present invention provide a computer-implemented method for parallel readout for an X-ray image sensor module having a pixel array. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: generating a pixel data for each pixel within a respective pixel row of the pixel array based on a photon count; receiving a first serial pixel data, wherein the first serial pixel data comprises pixel data from a plurality of pixels of a first column; receiving a second serial pixel data, wherein the second serial pixel data comprises pixel data from a plurality of pixels of a second column; and shifting the first serial pixel data from the first column register to the second column register.

Abstract: An apparatus and process is provided to illustrate the manipulation of the internal electric field of CZT using multiple wavelength light illumination on the crystal surface at RT. The control of the internal electric field is shown through the polarization in the IR transmission image under illumination as a result of the Pockels effect.

Abstract: A device for counting photons includes a detector unit that is configured to generate an detected signal. A switching unit is configured to be impinged upon by the detected signal and to trigger a switching state for each detection pulse so as to generate a state signal. A sampling unit is configured to sample the state signal at a predetermined sampling frequency. A serial-parallel converter unit is configured to parallelize the serially generated sampled data by grouping successive sampled data into a sampled data packet. An evaluation unit is configured to evaluate the binary values of sampled data packets so as to identify a partial counter result indicating the number of switching state changes occurring in the switching unit, and to add partial counter results identified in individual clock cycles.

Abstract: A radiation detector is provided that provides fast sequential image acquisition. In one embodiment, the radiation detector a diode capacitor that is charged in response to a radiation exposure event. The charge stored in the diode capacitor is transferred to a separate storage capacitor, allowing a new charge to be generated and stored at the diode capacitor.

Abstract: When all TFTs are turned on, an electric signal is compared with a first threshold value. If the electric signal is equal to or more than the first threshold value, a first judgment unit judges that X-ray irradiation has been started. A second judgment unit compares second and third threshold values with a first-order differentiation value of an electric signal that is outputted in a state of turning off all the TFTs. If the first-order differentiation value is within or out of a range defined by the second and third threshold values throughout a verification period, the second judgment unit verifies that the judgment of the first judgment unit is correct. When the judgment of the first judgment unit is verified to be correct, the TFTs are kept turned off, and an FPD continuously carries out charge accumulation operation for capturing an X-ray image.

Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.

Abstract: A detector and a method for the detection of ionising radiation are proposed. The detector (1) exhibits a detector body (2) made from a semiconductor material in which incident ionising radiation generates free electron-hole pairs, a cathode side (4) of the detector body (2) to which the free holes generated drift in an electric field, an anode side (3) of the detector body (2) to which the free electrons generated drift in an electric field, at least two electrodes (5, 6) on the anode side (3) and at least two electrodes (7, 8) on the cathode side (4). There is a potential difference between the electrodes (5, 6, 7, 8). The potential difference between the individual electrodes (7, 8) on the cathode side (4) is smaller than the potential difference between each of the electrodes (5, 6) on the anode side (3) on the one hand and each of the electrodes (7, 8) on the cathode side (4) on the other hand.

Abstract: A method is provided for detecting x-ray quanta incident on a multi-pixel x-ray detector having a two-dimensional matrix composed of measurement-signal-generating pixels, wherein the multi-pixel x-ray detector is embodied as a direct solid-state detector, wherein the pixels, which generate a measurement signal within a predefined time interval and which in addition lie in a contiguous cluster composed of a plurality of pixels, are assigned to an event cluster by an evaluation unit and wherein their measurement signals are drawn upon for the purpose of approximating the position at which the x-ray quantum interacted with the multi-pixel x-ray detector.

Abstract: A pixel for the detection of electromagnetic radiation or high energy particles or charge packets, in particular for detecting X-ray photons, comprises a radiation receptor for converting the radiation into a sensing signal, the pixel being adapted for performing both pulse detection and integration of the same sensing signal.

Abstract: Disclosed herein is a photoelectric conversion device having unit pixels arranged in a matrix, each of the unit pixels including: a photoelectric conversion element; a source follower readout transistor configured to receive a signal charge arising from photoelectric conversion by the photoelectric conversion element by a gate, and read out an electrical signal dependent on the signal charge; and a correction circuit configured to reset gate potential of the readout transistor to Vref+Vth prior to signal readout by the readout transistor, if a reference potential given to the gate of the readout transistor is defined as Vref and threshold voltage of the readout transistor is defined as Vth.

Abstract: A microdosimeter, comprising an array of three-dimensional p-n junction semiconductor detectors, each providing a sensitive volume-target and a tissue equivalent medium for generating secondary charged particles. The array is manufactured from a semiconductor on insulator wafer and the detectors are located to detect secondary charged particles generated in the tissue equivalent medium.

Abstract: A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.

Abstract: An image sensor system using offset analog to digital converters. The analog to digital converters require a plurality of clock cycles to carry out the actual conversion. These conversions are offset in time from one another, so that at each clock cycle, new data is available. A CMOS image sensor converts successive analog signals, representing at least a portion of an image, into successive digital signals using an analog to digital circuit block. Multiple clock cycles may be used by the circuit block to fully convert an analog signal into a corresponding digital signal. The conversion of one analog signal into a corresponding digital signal by the circuit block may be offset in time and partially overlapping with the conversion of a successive analog signal into its corresponding successive digital signal by the circuit block.