Abstract: An inner source assembly for a mass spectrometer, the assembly comprising: a base; and a volume housing removably connectable to the base for retaining a repeller assembly therebetween, wherein one of the base and volume housing comprises at least two protrusions and the other of the volume housing and base comprises at least two corresponding slots to receive and retain said protrusions, wherein the protrusions are dissimilar to one another and/or the slots are dissimilar to one another.

Abstract: A first mass spectrum including a fragment ion peak is generated under application of a first ionization method. A second mass spectrum including a molecular ion peak is generated under application of a second ionization method. These mass spectra are synthesized to generate a synthesized mass spectrum. On the synthesized mass spectrum, difference information, such as a mass difference and difference composition, is calculated between the molecular ion peak and the fragment ion peak.

Abstract: An electron source in a gas-source mass spectrometer the electron source comprising: an electron emitter cathode presenting a thermionic electron emitter surface in communication with a gas-source chamber of the gas-source mass spectrometer for providing electrons there to; a heater element electrically isolated from the electron emitter cathode and arranged to be heated by an electrical current therein and to radiate heat to the electron emitter cathode sufficient to liberate electrons thermionically from said electron emitter surface, therewith to provide a source of electrons for use in ionising a gas the gas-source chamber.

Abstract: An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.

Abstract: An electron generating apparatus includes a filament, a power supply configured to supply power to the filament so as to make the filament emit an electron, and a controller configured to repeatedly detect a value having a correlation with power supplied from the power supply to the filament, determine whether a state of the filament satisfies a notification condition, by using a plurality of detected values, and perform notification when the state satisfies the notification condition.

Abstract: An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.

Abstract: An apparatus for measuring ion beam current values without disturbing the state of ionization of an ion source includes a high-voltage circuit for applying a voltage between an anode and at least one cathode of an ion source based on a voltage condition and supplying its output current to the anode; a gas flow rate adjusting mechanism for adjusting the flow rate of a gas being an ion source material for generating ions and to be admitted into the ion source; a memory in which there is stored information representing a relationship between the flow rate of the gas and the value of an extraction current flowing through an extraction electrode; and an arithmetic processor for finding the extraction current corresponding to the flow rate of the gas based on the information stored in the memory and subtracting the value of the extraction current from the value of the output current supplied to the anode by the high-voltage circuit to compute the electrical current value of the ion beam.

Abstract: An ion source is provided. The ion source includes a plasma generation container, an electron supply, an electromagnet and a shift means. The plasma generation container generates an ion beam to be extracted therefrom in an ion beam extraction direction. The electron supply supplies electrons into the plasma generation container. The electromagnet generates a magnetic field for capturing the electrons from the electron supply. The shift means shifts a center of the magnetic field in the ion beam extraction direction to change a rate of a desired type of ion to be contained in the ion beam.

Abstract: Provided herein are approaches for increasing efficiency of ion sources. In some embodiments, an apparatus, such as an ion source, may include a chamber housing having a first end wall and a second end wall, and an extraction plate coupled to at least one of the first end wall and the second end wall. The extraction plate may include an extraction aperture. The apparatus may further include a tubular cathode extending between the first end wall and the second end wall.

Abstract: Methods of producing cellulosic or lignocellulosic materials for use in papermaking include treating a cellulosic or lignocellulosic dry feedstock having a first average molecular weight with ionizing radiation, and controlling the dose of ionizing radiation such that the average molecular weight of the feedstock is reduced to a predetermined level. A method of producing an irradiated paper product includes treating a paper product including a first carbohydrate-containing material having a first molecular weight with ionizing radiation, and controlling the dose of ionizing radiation so as to provide an irradiated paper product with a second carbohydrate-containing material having a second molecular weight higher than the first molecular weight. Pulp and paper products are produced.

Abstract: A silicone coating process that improves the durability of silicone coatings on the surfaces of surgical needles and other medical devices. The silicone coated surgical needles or medical devices produced by this process have both superior lubricity and durability for ease of repeated and successive passes through tissue. The coating compositions used in the novel process contain an excess amount of polymethylhydrosiloxane cross-linker. After curing, the process utilizes gamma radiation to treat the lubricious coatings. The coatings have improved durability and performance. The penetration performance of needles coated by this novel method remains constant and flat over at least one hundred repeat passes through tissue or tissue simulation media. This provides a consistent or flat tactile response from the needles to the hand of the surgeon during a lengthy closure process, rather than an unpredictably increasing force profile.

Abstract: Apparatus, system, and methods are provided for reducing infectious agents at a sterile site by preventing infectious agents from coming into contact with the sterile site. A barrier is produced for infectious agents that may come in proximity or otherwise communicate with the site. The apparatus is configured to create a void-free barrier in which infectious agents are reduced with minimal exposure of potentially harmful effects of the barrier to the sterile site, objects, or users of the apparatus.

Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

Abstract: Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

Abstract: A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Abstract: In order to attain a main objective of the present invention to provide an ion source capable of efficiently extracting ions, the ion source is configured to include: a conductive tubular body having an ion emitting aperture in a tip surface thereof and a penetration portion in a side wall thereof allowing thermo-electrons to pass through from an outside toward an inside; a mesh surrounding an outer periphery of the penetration portion; and a thermionic emission filament surrounding an outer periphery of the mesh, such that the thermo-electrons emitted from the thermionic emission filament pass through the mesh and reach the inside of the conductive tubular body through the penetration portion.

Abstract: A plasma-based material modification system for material modification of a work piece may include a plasma source chamber coupled to a process chamber. A support structure, configured to support the work piece, may be disposed within the process chamber. The plasma source chamber may include a first plurality of magnets, a second plurality of magnets, and a third plurality of magnets that surround a plasma generation region within the plasma source chamber. The plasma source chamber may be configured to generate a plasma having ions within the plasma generation region. The third plurality of magnets may be configured to confine a majority of electrons of the plasma having energy greater than 10 eV within the plasma generation region while allowing ions from the plasma to pass through the third plurality of magnets into the process chamber for material modification of the work piece.

Abstract: Apparatus, system, and methods are provided for reducing infectious agents at a sterile site by preventing infectious agents from coming into contact with the sterile site. A barrier is produced for infectious agents that may come in proximity or otherwise communicate with the site. The apparatus is configured to create a void-free barrier in which infectious agents are reduced with minimal exposure of potentially harmful effects of the barrier to the sterile site, objects, or users of the apparatus.

Abstract: An electron impact ion beam source is provided with a pressure chamber to confine a specific high pressure area within excited gas to a small enough volume that the source can be operated at relatively high pressure and still achieve substantial brightness of the extracted ion beam. In particular, the area is configured such that the overall linear dimension along the beam path is less than the mean free path of the ions and the electrons within the chamber. If pressure is increased, the linear dimension must be correspondingly decreased to maximized brightness. By keeping linear dimensions sufficiently small, both incident electrons and extracted ions are enabled to transit the source region without significant energy loss. The new source design allows operation at pressures at least an order of magnitude higher than other known ion sources and thus produces an order of magnitude higher brightness.

Abstract: A system for detecting and counting ions comprises a source of atoms, a hot filament ion source, means for generating an electric field and a magnetic field, and means for detecting and counting the ions, and the filament comprises a portion that is concave along its longitudinal and/or transverse axis.

Abstract: An ion source assembly for a static mass spectrometer, comprises: a mounting element for locating the assembly within the static mass spectrometer; an ion source for generating ions to be analyzed in the static mass spectrometer, the ion source being spaced from the mounting element and arranged to be held in use at a first relatively high potential V1 with respect to the mounting element; and a spacer mounted between the mounting element and the ion source, the spacer arranged to be held in use at a second potential V2 with respect to the mounting element, which is less than the first potential V1.

Abstract: An apparatus includes a gas dispersal plate and an adapter structure. The gas dispersal plate has a plurality of gas dispersion orifices, wherein one or more of the gas dispersion orifices have a first portion with a first cross-section configured to allow entry of gas and a second portion having a second cross-section configured to allow exit of gas, the first cross-section being smaller than the second cross-section.

Abstract: A gas mixture method and apparatus of prolonging lifetime of an ion source for generating an ion beam particularly an ion beam containing carbon is proposed here. By mixing the dopant gas and the minor gas together to generate an ion beam, undesired reaction between the gas species and the ion source can be mitigated and thus lifetime of the ion source can be prolonged. Accordingly, quality of ion beam can be maintained.

Abstract: A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.

Abstract: A system and method comprising an ion production chamber having a plasma source disposed in said chamber, a harvest gas disposed to flow through the chamber from an inlet to an outlet, and a jet, said jet operable to introduce a sample into the harvest gas flow. In some embodiments the system includes using helium as the harvest gas. Certain embodiments include introducing a sample perpendicular to the harvest gas flow and using multiple sample introduction jets to increase mixing efficiency. The charge sample may be coupled to a MEMS-based electrometer.

Abstract: An electron beam emitter comprises a housing enclosing a cathode capable of emitting electrons within the housing and a window for allowing the emitted electrons to exit the housing, wherein the housing has an opening adapted to be at least partly engaged with a high voltage connector assembly, the assembly being adapted to connect the cathode to a power supply, the electron beam emitter further comprising a cooling flange surrounding the opening and having an interior channel extending between an inlet port and an outlet port for receiving cooling fluid for cooling the high voltage connector assembly. The invention further relates to a method of cooling an electron beam device.

Abstract: The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Abstract: An ion source includes an ion source chamber, a gas source to provide a fluorine-containing gas species to the ion source chamber and a cathode disposed in the ion source chamber configured to emit electrons to generate a plasma within the ion source chamber. The ion source chamber and cathode are comprised of a refractory metal. A phosphide insert is disposed within the ion source chamber and presents an exposed surface area that is configured to generate gas phase phosphorous species when the plasma is present in the ion source chamber, wherein the phosphide component is one of boron phosphide, tungsten phosphide, aluminum phosphide, nickel phosphide, calcium phosphide and indium phosphide.

Abstract: A charger to apply a charge to an object is provided. The charger includes an electron emitter including an electroconductive substrate; and a layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms, which is located on the electroconductive substrate, wherein the concentration of oxygen atoms in the layer of n-type hexagonal boron nitride codoped with magnesium and oxygen atoms is higher than the concentration of magnesium atoms in the layer.

Abstract: The present invention relates to a device for obtaining the ion source of a mass spectrometer using an ultraviolet diode and a CEM module, having the purpose of inducing initial electron emission using a CEM module and by radiating ultraviolet photons emitted from the ultraviolet diode to the entrance of the CEM module to obtain a large amount of amplified electron beams from the exit and to produce electron beams the emission times of which are accurately controlled at low temperature and at low power.

Abstract: A gas mixture method for generating an ion beam is provided here. By dynamically tuning the mixture ratio of the gas mixture, lifetime of the ion source of an ion implanter can be prolonged. Accordingly, quality of ion beam can be maintained and maintenance fee is reduced.

Abstract: The primary collimator for a radiotherapy apparatus can be made up of several layers, each comprising several apertures, and each layer being moveable so as to select a specific aperture to build up the primary collimator shape. In this way, the shape of the primary collimator can be tailored and/or the beam filters incorporated into the primary collimator assembly. This saves space in the radiation head whilst also allowing filters to be easily interchanged.

Abstract: An electron cyclotron resonance ion source device includes a plasma chamber configured to contain a plasma; a high-frequency system configured to transmit a high-frequency wave into the chamber; a magnetic field generator configured to generate a magnetic field in the chamber; an accelerating tube including an isolating structure and an extraction system, the magnetic field generator for generating a magnetic field being entirely located downstream of the isolating structure.

Abstract: Methods and apparatus for a carbon ion source head. An ionization chamber is configured to receive a process gas containing carbon and a noble carrier gas; a cathode is disposed in the ionization chamber and configured to emit electrons in thermionic emission; a graphite coating is provided on at least a portion of the cathode; and an outlet on the ionization chamber is configured to output carbon ions. A method for ion implantation of carbon is disclosed. Additional alternative embodiments are disclosed.

Abstract: A particle beam generating device includes at least one accelerator unit for generating a particle beam and at least one emission unit for the output of the at least one particle beam onto a workpiece. The device is configured to release at least two particle beams including hadronic particles with at least one of a different mass or a different charge.

Abstract: An ionization cell for a mass spectrometer (2) includes: an ionization housing (10) having a first and a second electron input groove (11, 26) and one side (16) of which has an output groove (15) for passing ionized particles (14a, 14b, 14c) therethrough, a first working filament (13) placed opposite the first electron input groove (11) and intended to be supplied to produce an electron beam (12), and a second backup filament (22) placed opposite the second electron input groove (26) and intended to be supplied in the event the first working filament (13) fails so as to produce the electron beam, the input groove (26) being placed outside a front region (F) located opposite the first input groove (11). The invention also relates to a leak detector with a mass spectrometer, which includes such an above-described ionization cell.

Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.

Abstract: An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the passive anode electrode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one ohmically heated cathode is configured to emit electrons into the ionization region. The back passive cathode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generating a magnetic field, such that a Penning-type trap is produced to confine the electrons to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.

Abstract: An ion source for use in a particle accelerator includes at least one cathode. The at least one cathode has an array of nano-sized projections and an array of gates adjacent the array of nano-sized projections. The array of nano-sized projections and the array of gates have a first voltage difference such that an electric field in the cathode causes electrons to be emitted from the array of nano-sized projections and accelerated downstream. There is a ion source electrode downstream of the at least one cathode, and the at least one cathode and the ion source electrode have the same voltage applied such that the electrons enter the space encompassed by the ion source electrode, some of the electrons as they travel within the ion source electrode striking an ionizable gas to create ions.

Abstract: An ion source for use in a radiation generator tube includes a back passive cathode electrode, a passive anode electrode downstream of the back passive cathode electrode, a magnet adjacent the passive anode electrode, and a front passive cathode electrode downstream of the passive anode electrode. The front passive cathode electrode and the back passive cathode electrode define an ionization region therebetween. At least one Spindt cathode is configured to emit electrons into the ionization region. The back passive electrode electrode and the passive anode electrode, and the front passive cathode electrode and the passive anode electrode, have respective voltage differences therebetween, and the magnet generates a magnetic field, such that a Penning-type trap is produced to confine the electrons to the ionization region. At least some of the electrons in the ionization region interact with an ionizable gas to create ions.

Abstract: In one embodiment an ion source includes an arc chamber and an emitter having a surface disposed in the arc chamber, where the emitter is configured to generate a plasma in the arc chamber. The ion source further includes a repeller having a repeller surface positioned opposite the emitter surface, and a hollow cathode coupled to the repeller and configured to provide a feed material into the arc chamber.

Abstract: An ion source includes a cathode emitting primary electrons, a cathode grid downstream of the cathode, a reflector electrode downstream of the cathode grid, a reflector grid radially inward of the reflector electrode, and an extractor electrode downstream of the reflector electrode. The cathode and the cathode grid have a voltage difference such that the electric field accelerates the primary electrons on a trajectory toward the extractor electrode. The reflector grid and the extractor electrode have a voltage difference such that the electric field repels the primary electrons on a trajectory away from the extractor electrode and toward the reflector electrode. The cathode and reflector electrode have a voltage difference such that some primary electrons strike the reflector electrode, creating secondary electrons. The reflector grid has a positive potential such that the electric field attracts the primary and secondary electrons into the ionization region where they interact with ionizable gas.

Abstract: An ion source is disclosed wherein a sample is introduced into the sample chamber of the ion source in the gas phase via a sample introduction capillary tube. The sample is directed onto a heated surface coated with an oxidizing reagent such as copper oxide. Carbon in the sample is oxidized to form carbon dioxide. The resulting carbon dioxide molecules are then ionised by electron impact ionization with an electron beam and the resulting ions are passed to a mass analyzer for mass analysis.

Abstract: A vacuum measurement device includes a grid (10) and an electron source (20) provided inside a vacuum vessel, and an ion beam (100) extracted outside the grid is captured by an ion collector (40) and is converted into a current signal. The grid (10) is a grid-shaped cylinder, and an ion outlet (11) is opened and elongated in the longitudinal direction along the side surface of the grid (10). The vacuum measurement device includes a primary ion collector (40) capturing specific ions and a secondary ion collector (50) capturing other ions. The gas molecule density of the ion source is obtained from a total current of the primary and secondary ion collectors, and a ratio of the gas molecule density of the specific ions relative to the gas molecule density is obtained from a ratio of the current of the primary ion collector (40) relative to the total current.

Abstract: An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.

Abstract: An ionization gauge to measure pressure and to reduce sputtering yields includes at least one electron source that generates electrons. The ionization gauge also includes a collector electrode that collects ions formed by the collisions between the electrons and gas molecules. The ionization gauge also includes an anode. An anode bias voltage relative to a bias voltage of a collector electrode is configured to switch at a predetermined pressure to decrease a yield of sputtering collisions.

Abstract: A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n.

Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.

Abstract: An ionizing device 2 includes an ionization chamber 2a having an ionization space 2b for ionizing sample molecules A, filaments 23a and 23b to have an electron impact on the sample molecules A in the ionization space 2b, to ionize the sample molecules A, and an electric discharge tube 29 to irradiate the sample molecules A in the ionization space 2b with ultraviolet light, to ionize the sample molecules A.

Abstract: The invention relates to a device for performing electron capture dissociation on multiply charged cations. Provided is an electron emitter which, upon triggering, emits a plurality of low energy electrons suitable for efficient electron capture reactions to occur. Further, the device contains a particle emitter being located proximate to the electron emitter and being capable, upon triggering, to emit a plurality of high energy charged particles substantially in a direction towards the electron emitter in order that the electron emitter receives a portion of the emitted plurality of high energy charged particles and emission of the plurality of low energy electrons is triggered. A volume capable of containing a plurality of multiply charged cations is located in opposing relation to the electron emitter such that the volume receives the plurality of low energy electrons upon emission as to allow electron capture dissociation to occur.