Abstract: To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathode 101 with negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beam 13 generated from the photocathode by excitation light 12 irradiated through the excitation optical system onto a sample, the excitation optical system including a light source device 107 for the excitation light; and an optical modulation means 108 which is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Abstract: To provide an electron microscope capable of performing the switching-over between normal illumination and annular illumination, wide-area irradiation, an interference pattern as desired or normal illumination in an expeditious and readily manner or achieving a better S/N ratio, the electron microscope comprises a photocathode 101 with negative electron affinity in use; an excitation optical system to excite the photocathode; and an electron optics system to irradiate an electron beam 13 generated from the photocathode by excitation light 12 irradiated through the excitation optical system onto a sample, the excitation optical system including a light source device 107 for the excitation light; and an optical modulation means 108 which is disposed in an optical path of the excitation light to perform spatial phase modulation to the excitation light.

Abstract: The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

Abstract: The invention relates to a device for generating electromagnetic THz radiation with free electron beams, comprising a dynatron tube, where the dynatron tube comprises an electron source, an extraction grid, and, an anode preferably coated with a material composition for high secondary electron emission, arranged in vacuum. The dynatron tube is connected to a voltage supply supplying an extractor voltage and an anode voltage and the extractor voltage is higher than the anode voltage. An oscillator modulates the anode voltage and the anode voltage is set to a work point voltage.

Abstract: A system for detecting at least one contamination species in an interior space of a lithographic apparatus, including: at least one monitoring surface configured to be in contact with the interior space, a thermal controller configured to control the temperature of the monitoring surface to at least one detection temperature, and at least one detector configured to detect condensation of the at least one contamination species onto the monitoring surface.

Abstract: A method by which negative electron affinity photocathodes (201), single crystal, amorphous, or otherwise ordered, can be made to recover their quantum yield following exposure to an oxidizing gas has been discovered. Conventional recovery methods employ the use of cesium as a positive acting agent (104). In the improved recovery method, an electron beam (205), sufficiently energetic to generate a secondary electron cloud (207), is applied to the photocathode in need of recovery. The energetic beam, through the high secondary electron yield of the negative electron affinity surface (203), creates sufficient numbers of low energy electrons which act on the reduced-yield surface so as to negate the effects of absorbed oxidizing atoms thereby recovering the quantum yield to a pre-decay value.

Abstract: The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.

Abstract: An electron beam irradiation device of the present invention includes: a projector 8 for generating a two-dimensional light pattern 13; a microchannel plate 11 for (i) generating an electron beam array based on the light pattern 13 having entered, (ii) amplifying the electron beam array, and (iii) emitting the electron beam array as an amplified electron beam array 14; and an electron beam lens section 12 for converging the amplified electron beam array 14. This electron beam irradiation device is capable of manufacturing a semiconductor device whose performance is improved through a finer processing by means of irradiation using an electron beam. Further, the electron beam irradiation device allows cost reduction, because the device allows collective irradiation using a two dimensional pattern.

Abstract: A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.

Abstract: A multifunction module for an electron beam column comprises upper and lower electrodes, and a central ring electrode. The upper and lower electrodes have multipoles and are capable of deflecting, or correcting an aberration of, an electron beam passing through the electrodes. A voltage can be applied to the central ring electrode independently of the voltages applied to the upper and lower electrodes to focus the electron beam on a substrate.

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract: One embodiment pertains to a method of electron beam lithography. An illumination electron beam is formed, and a dynamic pattern generating device is used to generate an electron-reflective pattern of pixels and to reflect the illumination electron beam from said pattern so as to form a patterned electron beam. The patterned electron beam is projected onto a platter configured to hold and rotate a plurality of target substrates. Said generated pattern of pixels is shifted in correspondence with the rotation of the platter so that the patterned electron beam writes a swath path of pixels over the target substrates. Other features, aspects and embodiments are also disclosed.

Abstract: A device couples energy from an electromagnetic wave to charged particles in a beam. The device includes a micro-resonant structure and a cathode for providing electrons along a path. The micro-resonant structure, on receiving the electromagnetic wave, generates a varying field in a space including a portion of the path. Electrons are deflected or angularly modulated to a second path.

Abstract: A method for writing a master image on a substrate includes dividing the master image into a matrix of frames, each frame including an array of pixels defining a respective frame image in a respective frame position within the master image. An electron beam is scanned in a raster pattern over the substrate, while shaping the electron beam responsively to the respective frame image of each of the frames as the electron beam is scanned over the respective frame position, so that in each frame, the electron beam simultaneously writes a multiplicity of the pixels onto the substrate.

Abstract: The invention relates to improved terahertz radiation sources and associated methods. A terahertz radiation source is described, comprising: an emitter (202) comprising a semiconductor material (12); a pair of electrodes (204a,b) adjacent a face of said semiconductor, said pair of electrodes defining a gap between said electrodes; a pulsed light source input for illuminating said semiconductor to excite photo-carriers in said semiconductor to generate terahertz radiation; and a radiation collector (212) to collect said terahertz radiation; and wherein said radiation collector is disposed on the same side of said semiconductor as said electrodes. A related method of providing terahertz radiation is also described.

Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.

Abstract: Method, apparatus and system for reducing or preventing polarization in semiconductor radiation detectors for medical imaging. For example, an apparatus includes a semiconductor with electrodes coupled thereto, configured to generate an electrical signal in the electrodes in response to absorption of ionizing radiation in the semiconductor, wherein the absorption of the ionizing radiation generates a space charge in the semiconductor; and an infra-red (IR) generator configured to generate IR radiation of a selectable wavelength, the selectable wavelength being chosen so as to at least partially reduce an effect of the space charge on the electrical signal.

Abstract: A coupled nano-resonating structure includes a plurality of a nano-resonating substructures constructed and adapted to couple energy from a beam of charged particles into said nano-resonating structure and to transmit the coupled energy outside said nano-resonating structure. The nano-resonant substructures may have various shapes and may include parallel rows of structures. The rows may be symmetric or asymmetric, tilted, and/or staggered.

Abstract: One embodiment relates to a dynamic pattern generator for controllably reflecting charged particles. The generator includes at least a controllable light emitter array, an optical lens, and an array of light-sensitive devices. The controllable light emitter array is configured to emit a pattern of light. The optical lens is configured to demagnify the pattern of light. The array of light-sensitive devices is configured to receive the demagnified pattern of light and to produce a corresponding pattern of surface voltages. Other embodiments and features are also disclosed.

Abstract: An emitter for an electron-beam projection lithography system includes a photoconductor substrate, an insulating layer formed on a front surface of the photoconductor substrate, a gate electrode layer formed on the insulating layer, and a base electrode layer formed on a rear surface of the photoconductor substrate and formed of a transparent conductive material. In operation of the emitter, a voltage is applied between the base electrode and the gate electrode layer, light is projected onto a portion of the photoconductor substrate to convert the portion of the photoconductor substrate into a conductor such that electrons are emitted only from the partial portion where the light is projected. Since the emitter can partially emit electrons, partial correcting, patterning or repairing of a subject electron-resist can be realized.

Abstract: A device couples energy from an electromagnetic wave to charged particles in a beam. The device includes a micro-resonant structure and a cathode for providing electrons along a path. The micro-resonant structure, on receiving the electromagnetic wave, generates a varying field in a space including a portion of the path. Electrons are deflected or angularly modulated to a second path.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: A heating assembly (36) for heating a cathode (38) of an electron gun (30) of an exposure apparatus (10) includes a radiation source (42) and a beam shaper (44). The radiation source (42) generates a source beam (46). The beam shaper (44) receives the source beam (46) and selectively shapes the source beam (46) into a shaped beam (48) that is directed to the cathode (38). In certain embodiments, the beam shaper (44) can readily change the shape and intensity profile of the shaped beam (48) to achieve a desired electron beam (32) from the electron gun (30). In one embodiment, the radiation source (42) generates a pulsed source beam (46).

Abstract: An electron beam pattern generator comprises a laser beam generator to generate a laser beam. A photocathode receives the laser beam and generates one or more electron beams. The photocathode comprises cesium halide material, such as for example, cesium bromide or iodide. The cesium halide material may have a decreased workfunction that allows efficient operation at a wavelength of the laser beam of at least about 200 nm. Electron optics are provided to focus the electron beams onto a substrate that is supported on a substrate support.

Abstract: An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

Abstract: An electron beam lithography apparatus for providing one-to-one or x-to-one projection of a pattern includes a pyroelectric emitter, which is disposed a predetermined distance apart from a substrate holder, the pyroelectric emitter including a pyroelectric plate having a dielectric plate on a surface thereof and a patterned semiconductor thin film on the dielectric plate facing the substrate holder, a heating source for heating the pyroelectric emitter, and either a pair of magnets disposed beyond the pyroelectric emitter and the substrate holder, respectively, or a deflection unit disposed between the pyroelectric emitter and the substrate holder, to control paths of electrons emitted by the pyroelectric emitter. In operation, when the pyroelectric emitter is heated in a vacuum, electrons are emitted from portions of the pyroelectric plate that are not covered by the patterned semiconductor thin film.

Abstract: A multiple electron beam pattern generator includes a multiple electron beam source to generate a plurality of electron beams that are modulated according to a pattern. An anode accelerates the electron beams, and then a beam retarding system generates a retarding electric potential about the electron beams to decrease the kinetic energy of the electron beams substantially near a substrate. A beam scanner scans the electron beams across the substrate. A substrate support supports the substrate, and a pattern is generated on the substrate.

Abstract: A miniaturized terahertz radiation source based on the Smith-Purcell effect is provided, in which, from a focused electron source, a high-energy bundle of electrons is transmitted at a defined distance over a reflection diffraction grating composed of transversely disposed grating rods, so that, in response to oscillating image charges, electromagnetic waves of one wavelength are emitted, the wavelength being adjustable as a function of the periodicity of the lines and of the electron velocity. The elements of the radiation source, such as field emitter (1), electrostatic lens (4), beam deflector (5), grating (7) of metal, and a second anode (8), are integrated on a semiconductor chip using additive nanolithographic methods. The field electron source is constructed to project, as a wire, out of the surface, using additive nanolithography, and is made of readily conductive material having stabilizing series resistance.

Abstract: An ion implanting system and a wafer holding apparatus therefor are provided. The ion implanting system includes x- and y-axis rotating parts; first and second angle measuring circuits; and a controller. The x-axis rotating part rotates a main surface of a wafer about an x-axis, and the y-axis rotating part rotates the main surface of the wafer about a y-axis. The first angle measuring circuit is rotated along with the main surface of the wafer and measures a tilt angle of the main surface of the wafer with respect to the x-axis. The second angle measuring means is rotated along with the main surface of the wafer and measures a rotating angle of the main surface of the wafer with respect to the y-axis. The controlling part, when the measured tilt angles are different from target tilt angles, controls the x- and y-axis rotating parts such that the measured tilt angles are equal to the target tilt angles.

Abstract: Metal-insulator-metal planar electron emitters (PEES) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract: An electron-beam focusing apparatus for controlling a path of electron beams emitted from an electron-beam emitter in an electron-beam projection lithography (EPL) system includes top and bottom magnets for creating a magnetic field within a vacuum chamber, the top and bottom magnets disposed above and below the vacuum chamber into which a wafer is loaded, respectively; upper and lower pole pieces magnetically contacting the top and bottom magnets, respectively, the upper and lower pole pieces penetrating a top wall and a bottom wall of the vacuum chamber, respectively; and upper and lower projections having a circular shape, extending outwardly from facing surfaces of the upper and lower pole pieces, respectively.

Abstract: An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.

Abstract: A lithography system comprising a converter element (7) for receiving light and converting said light in a plurality of electron beams (15) to be directed towards and focused on a substrate (10) to be processed, said plurality of electron beams (15) being used to define a pattern in a resist layer (20) on said substrate (10), wherein said lithography system is provided with a protective foil with holes at the positions of the electron beams (23) being arranged to protect, in use, said converter element (7) from contamination with material from the resist layer (21).

Abstract: A high resolution and high data rate spot grid array printer system is provided, wherein an image representative of patterns to be recorded on a reticle or on a layer of a semiconductor die is formed by scanning a substrate with electron beams. Embodiments include a printer comprising an optical radiation source for irradiating a photon-electron converter with a plurality of substantially parallel optical beams, the optical beams being individually modulated to correspond to an image to be recorded on the substrate. The photon-electron converter produces an intermediate image composed of an array of electron beams corresponding to the modulated optical beams. A de-magnifier is interposed between the photon-electron converter and the substrate, for reducing the size of the intermediate image. A movable stage introduces a relative movement between the substrate and the photon-electron converter, such that the substrate is scanned by the electron beams.

Abstract: Metal-insulator-metal planar electron emitters (PEEs) have potential for use in advanced lithography for future generations of semiconductor devices. The PEE has, however, a limited lifetime, which restricts its commercial applicability. It is believed that the limited lifetime of the PEE is limited by in-diffusion of metal ions from the anode. The in-diffusion may be countered in a number of different ways. One way is to cool the PEE to temperatures below room temperature. This lowers the metal ion mobility, and so the metal ions are less likely to diffuse into the insulator layer. Another way is to occasionally reverse the electrical potential across the PEE from the polarity used to generate the electron beam. This counteracts the electrical driving force that drives the positively charged metal ions from the PEE anode to the PEE cathode.

Abstract: The present invention provides a source of multiple beams of electrons having a desired spatial pattern, as typically used for multiple beam lithography. A source of radiation, typically ultraviolet radiation, is directed onto a modulator and from the modulator onto a photocathode. The modulator, typically a spatial light modulator, imposes a spatial pattern onto the radiation. The pattern imposed onto the radiation is transmitted to the multiple beams of electrons as such beams are generated by the photocathode. An electron beam lithography system having higher throughput than conventional single beam systems is one result. Methods of creating multiple electron beams and methods of patterning targets with such multiple beams of electrons are also described. A micromirror array is a preferred modulator. Mercury arc lamp directing ultraviolet radiation by means of the modulator onto a cesium telluride photocathode is a preferred combination of radiation source and photocathode.

Abstract: An electron beam lithography system has an electron gun including at least one laser that is operable in a first mode to generate electrons for lithography. The electron beam lithography system is operable in a second mode to regenerate the photocathode of the electron gun by application of the laser. The photocathode includes a layer of cesium telluride.

Abstract: An electron emission lithography apparatus and method using a selectively grown carbon nanotube as an electron emission source, wherein the electron emission lithography apparatus includes an electron emission source installed within a chamber and a stage, which is separated from the electron emission source by a predetermined distance and on which a sample is mounted, and wherein the electron emission source is a carbon nanotube having electron emission power. Since a carbon nanotube is used as an electron emission source, a lithography process can be performed with a precise critical dimension that prevents a deviation from occurring between the center of a substrate and the edge thereof and may realize a high throughput.

Abstract: An electron beam apparatus comprises a beam source to generate a radiation beam that is directed onto a photocathode to generate an electron beam. The photocathode comprises an electron-emitting material composed of activated alkali halide, such as for example, cesium bromide or cesium iodide. The activated alkali halide has a lower minimum electron emission energy level than the same material in the un-activated state, and provides efficient photoyields when exposed to radiation having an energy level that is higher than the minimum electron emission energy level. The emitted electrons can be collimated into beams and used to write on, inspect, or irradiate a workpiece.

Abstract: In a lithographic projection apparatus the positions and/or orientations of reflective optical elements is dynamically controlled. The position of a reflective optical element such as a mirror in an illumination or projection system is first measured using an absolute position sensor mounted on a reference frame and thereafter measured by a relative position sensor also mounted on said reference frame. The position of the element is controlled in accordance with the measured position, e.g. to maintain it stationary in spite of vibrations that might otherwise disturb it. The absolute sensor may be a capacitive or inductive sensor and the relative sensor may be an interferometer.

Abstract: A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

Abstract: A method and apparatus for emission lithography using a patterned emitter wherein, in the apparatus for emission lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet, a direct current magnetic field generator or a deflection system, thereby achieving an exact one-to-one projection or an exact x-to-one projection of the desired pattern etched on the substrate.

Abstract: Apparatus and methods to protect a photomask that is used for semiconductor photolithography at wavelengths outside the visible spectrum include a pellicle that is readily retracted during exposure or to provide access to the photomask. The pellicle can be transparent at an inspection wavelength and opaque at an exposure wavelength. In various embodiments, the pellicle is slid, retracted, or pivoted relative to a base aligned with the photomask, thus uncovering the photomask. When overlying the photomask, the pellicle can be secured with magnetic elements, such as magnets or electromagnets. In another embodiment, the pellicle includes a diaphragm that can be opened or closed. Methods of using a pellicle are also described.

Abstract: An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

Abstract: An electron beam lithography system includes a laser for generating a laser beam, and a beam splitter for splitting the laser beam into a plurality of light beams. The intensity of the light beams is individually modulated. The light beams are of sufficient energy such that, when they impinge on a photocathode, electrons are emitted. Modulation of the light beams controls modulation of the resulting electron beams. The electron beams are provided to an electron column for focusing and scanning control. Finally, the electron beams are used to write a scanning surface, for example, using an interlaced writing strategy.

Abstract: An electron beam pattern generator comprises a laser beam generator to generate a laser beam. A photocathode receives the laser beam and generates one or more electron beams. The photocathode comprises cesium halide material, such as for example, cesium bromide or iodide. The cesium halide material may have a decreased workfunction that allows efficient operation at a wavelength of the laser beam of at least about 200 nm. Electron optics are provided to focus the electron beams onto a substrate that is supported on a substrate support.

Abstract: An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.

Abstract: Disclosed is an electron beam irradiating apparatus including an electron beam source; an accelerating unit for accelerating electrons emitted from the electron beam source; a deflecting unit for deflecting a highly energized electron beam generated by the accelerating unit in a scanning direction; a vacuum vessel accommodating the electron beam source, the accelerating unit, and the deflecting unit in a vacuum environment; a window foil for ejecting the electron beam from the vacuum environment into a gas environment; a crosspiece for adhering to and supporting the window foil; and a cooling block for shielding the crosspiece from the electron beam in areas that the electron beam intersects the crosspiece.

Abstract: In a lithographic projection apparatus the positions and/or orientations of reflective optical elements is dynamically controlled. The position of a reflective optical element such as a mirror in an illumination or projection system is first measured using an absolute position sensor mounted on a reference frame and thereafter measured by a relative position sensor also mounted on said reference frame. The position of the element is controlled in accordance with the measured position, e.g. to maintain it stationary in spite of vibrations that might otherwise disturb it. The absolute sensor may be a capacitive or inductive sensor and the relative sensor may be an interferometer.

Abstract: A high resolution and high data rate spot grid array printer system is provided, wherein an image representative of patterns to be recorded on a reticle or on a layer of a semiconductor die is formed by scanning a substrate with electron beams. Embodiments include a printer comprising an optical radiation source for irradiating a photon-electron converter with a plurality of substantially parallel optical beams, the optical beams being individually modulated to correspond to an image to be recorded on the substrate. The photon-electron converter produces an intermediate image composed of an array of electron beams corresponding to the modulated optical beams. A de-magnifier is interposed between the photon-electron converter and the substrate, for reducing the size of the intermediate image. A movable stage introduces a relative movement between the substrate and the photon-electron converter, such that the substrate is scanned by the electron beams.