Abstract: According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-zQz, where Q is at least one selected from the group consisting of O, S, Se and Te, 0<x?0.5, 0<a?1 and 0?z?4.

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract: This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film AIGS, AIS, and AGS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.

Abstract: The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chalcogenide on a substrate. Such coated substrates contain p-type semiconductors and are useful as the absorber layer in a solar cell.

Abstract: A positive electroactive material is described, including: a lithium iron manganese phosphate compound having a composition of LiaFe1-x-yMnxDy(PO4)z, wherein 1.0<a?1.10, 0<x?0.5, 0?y?0.10, 1.0<z?1.10 and D is selected from the group consisting of Co, Ni, V, Nb and combinations thereof; and a lithium metal oxide, wherein the lithium iron manganese phosphate compound is optionally doped with Ti, Zr, Nb, Al, Ta, W, Mg or F. A battery containing the positive electroactive material is also described.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ?z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1, 0<b?3 and 0<n+z+b<12.

Abstract: A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.

Abstract: The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1?x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0<x<1, comprising dissolving a Group II element, a first Group VI element, and a second Group VI element in a one or more solvents. The Group II, VI and VI elements are combined to provide a II:VI:VI SCN precursor solution, which is heated to a temperature sufficient to produce semiconductor nanocrystals of the formula WYxZ(1?x). The solvent used to dissolve the Group II element comprises octadecene and a fatty acid. The solvent used to dissolve the Group VI elements comprises octadecene. The invention also includes semiconductor nanocrystals prepared according to the disclosed methods, as well as methods of using the semiconductor nanocrystals.

Abstract: This invention relates to compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MB(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds, precursor materials and methods for preparing photovoltaic layers and thin films thereof.

Abstract: Processes for making a photovoltaic layer on a substrate by depositing a first layer of an ink onto the substrate, wherein the ink contains one or more compounds having the formula MB(ER)3, wherein MB is In, Ga, or Al, E is S or Se, and depositing a second layer of one or more copper chalcogenides or a CIGS material.

Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.

Abstract: The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4-aSb12-z-bQz, where Q is at least one selected from the group consisting of O, S, Se and Te; 0<x?0.5; 0?a?1; 0<b?3; and 0<z?4.

Abstract: Affords AlxGa1-xN crystal growth methods, as well as AlxGa1-xN crystal substrates, wherein bulk, low-dislocation-density crystals are obtained. The AlxGa1-xN crystal (0<x?1) growth method is a method of growing, by a vapor-phase technique, an AlxGa1-xN crystal (10), characterized by forming, in the growing of the crystal, at least one pit (10p) having a plurality of facets (12) on the major growth plane (11) of the AlxGa1-xN crystal (10), and growing the AlxGa1-xN crystal (10) with the at least one pit (10p) being present, to reduce dislocations in the AlxGa1-xN crystal (10).

Abstract: A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises GexSbyTezAm in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

Abstract: The present invention relates to pulverulent compounds of the formula LiaNibM1cM2d(O)2(SO4)x, a process for preparation thereof and the use thereof as active electrode material in.

Abstract: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.

Abstract: The present invention relates to pulverulent compounds of the formula NibM1cM2d(0)x(OH)y(SO4)z, a process for the preparation thereof and the use thereof as precursors for the preparation of active materials for lithium secondary batteries.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2; 0?a?1; 0<b?3; and 0<n+z+b<12.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0?m?1; 0?n<9; 0<z?2 and 0<a?1.

Abstract: A transition metal hexacyanometallate (TMHCM)-conductive polymer (CP) composite electrode is provided. The battery electrode is made up of a current collector and a transition metal hexacyanometallate-conductive polymer composite overlying the current collector. The transition metal hexacyanometallate-conductive polymer includes a AXM1YM2Z(CN)N.MH2O material, where A may be alkali metal ions, alkaline earth metal ions, ammonium ions, or combinations thereof, and M1 and M2 are transition metal ions. The transition metal hexacyanometallate-conductive polymer composite also includes a conductive polymer material. In one aspect, the conductive polymer material is polyaniline (PANI) or polypyrrole (Ppy). Also presented herein are methods for the fabrication of a TMHCM-CP composite.

Abstract: The object of the present invention is to provide a lithium transition metal silicate-type cathode active material that shows superior cycle characteristics, and shows little deterioration of discharge capacity even after repeated charge-and-discharge. In the present invention, a cathode active material that is expressed by the general formula Li2-yFe1-xMxSi1-yXyO4 (M=at least one transition metal selected from the group consisting of Mn, Ti, Cr, V, Ni, Co, Cu, Zn, Al, Ge, Zr, Mo, W; X=at least one element selected from the group consisting of Ti, Cr, V, Zr, Mo, W, P, B; 0?x<1, 0?y<0.25), and contains a lithium transition metal silicate, which comprises a mixed phase of an orthorhombic-type structure with a space group Pmn21 symmetry, and a monoclinic-type structure with a space group P21/n symmetry, is provided.

Abstract: The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm?3.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-zXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Pd, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, 0<x<1, 0<y<1, 0?m?1, 0?n<9 and 0<z?2.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ?nTez, where Q? is at least one selected from the group consisting of O, S and Se, 0<x?0.5, 0<n?2 and 0<z?2.

Abstract: This invention relates to compounds and compositions used to prepare semiconductor and optoelectronic materials and devices. This invention provides a range of compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers.

Abstract: This invention relates to a range of compounds, inks and compositions used to make materials for photovoltaics, including solar cells. In particular, this invention relates to inks containing precursor compounds, as well as the precursor compounds, and materials for preparing photovoltaic layers. The precursor compounds and inks contain compounds having the formula MB(ER)3 wherein MB is In, Ga or Al, which can be deposited and converted to a material form.

Abstract: Amorphous or partially amorphous nanoscale ion storage materials are provided. For example, lithium transition metal phosphate storage compounds are nanoscale and amorphous or partially amorphous in an as-prepared state, or become amorphous or partially amorphous upon electrochemical intercalation or de-intercalation by lithium. These nanoscale ion storage materials are useful for producing devices such as high energy and high power storage batteries.

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, R[mol %]=[In]/[In+Zn+Sn]/100) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-mAmSb12-n-z-pXnQ?pTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q? is at least one selected from the group consisting of O, S and Se; 0<x<1; 0<y<1; 0?m?1; 0?n?7; 0<z?2 and 0<p?2.

Abstract: The invention provides electrode active materials comprising lithium or other alkali metals, manganese, a +3 oxidation state metal ion, and optionally other metals, and a phosphate moiety. Such electrode active materials include those of the formula: AaMnbMIcMIIdMIIIePO4 wherein (a) A is selected from the group consisting of Li, Na, K, and mixtures thereof, and 0<a?1; (b) 0<b?1; (c) MI is a metal ion in the +3 oxidation state, and 0<c<0.5; (d) MII is metal ion, a transition metal ion, a non-transition metal ion or mixtures thereof, and 0?d<1; (e) MIII is a metal ion in the +1 oxidation state and 0<e<0.5; and wherein A, Mn, MI, MII, MIII, PO4, a, b, c, d and e are selected so as to maintain electroneutrality of said compound.

Abstract: This invention relates to methods and articles using a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MA(ER)(ER)} and {MB(ER)(ER)}, wherein each MA is Cu, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention relates to methods for making materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to methods for making AIGS, AIS or AGS materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.

Abstract: This invention relates to methods and articles using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {MB(ER)(ER)} and {MA(ER)(ER)}, wherein MA is Ag, each MB is In or Ga, each E is S, Se, or Te, and each R is independently selected, for each occurrence, from alkyl, aryl, heteroaryl, alkenyl, amido, silyl, and inorganic and organic ligands.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.

Abstract: This invention relates to processes for preparing films of copper indium gallium sulfide/selenides (CIGS/Se) on substrates via inks comprising CIGS/Se microparticles and a plurality of particles. This invention relates to inks, coated layers, and film compositions. Such films are useful in the preparation of photovoltaic devices. This invention also relates to processes for preparing coated substrates and for making photovoltaic devices.

Abstract: The invention relates to a solid material with the following formula (A): (Cu+1a-u; Ag+1u; Zn+2b-v-(y/2); Cd+2v; Sn+4c-w-(y/2); 1X+4w; 2X+3y; S?2x)(A), in which the solid material: is in divided state in the form of particles having a mean equivalent diameter of 15 nm to 400 nm; has, according to X-ray diffraction analysis of the solid material, a unique crystalline structure; is suitable for forming a stable dispersion of at least one solid material with formula (A) in a liquid, referred to as dispersion liquid, made up of at least one compound with a value of ?p higher than 8 and a value of ?H higher than 5.

Abstract: A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.

Abstract: Provided is a composite electrode for a lithium secondary battery for improving output and a lithium secondary battery including the composite electrode, in which, in a composite electrode having two or more active materials mixed therein, an active material having a small particle size is included in the composite electrode by being coagulated and secondarily granulated so as to allow mixed active material particles to have a uniform size, and thus, electrical conductivity is improved to have high output characteristics.

Abstract: Provided is a p-type thermoelectric conversion material achieving a low environment load and low costs and having high efficiency. A thermoelectric conversion device is constituted by raw materials existing in a great amount in nature by using Fe and S as main components. Further, since FeS2 of a pyrite structure has a d orbit derived from Fe in a valence band and a high state density, high performance as the thermoelectric conversion device is implemented by adding an addition element to this material system to express a p-type semiconductor characteristic.

Abstract: A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (TMHCF) battery electrode. The method prepares a first solution of AxFe(CN)6 and Fe(CN)6, where A cations may be alkali or alkaline-earth cations. The method adds the first solution to a second solution containing M-ions and M?-ions. M is a transition metal, and M? is a metal dopant. Subsequent to stirring, the mixture is precipitated to form AxMcM?dFez(CN)n.mH2O particles. The AxMcM?dFez(CN)n.mH2O particles have a framework and interstitial spaces in the framework, where M and M? occupy positions in the framework. Alternatively, the method prepares AaA?bMyFez(CN)n.mH2O particles. A and A? occupy interstitial spaces in the AaA?bMyFez(CN)n.mH2O particle framework. A metal-doped TMHCF electrode is also provided.

Abstract: Materials having improved thermoelectric properties are disclosed. In some embodiments, lead telluride/selenide based materials with improved figure of merit and mechanical properties are disclosed. In some embodiments, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead telluride materials. In some embodiments, the lead telluride/selenide based materials are formed by doping lead telluride/selenides with potassium.

Abstract: The present invention provides a metal material comprising an alloy that is represented by the compositional formula Mn3-xM1xSiyAlzM2a, wherein M1 is at least one element selected from the group consisting of Ti, V, Cr, We, Co, Ni, and Cu; M2 is at least one element selected from the group consisting of B, P, Ga, Ge, Sn, and Bi, where 0?x?3.0, 3.5?y?4.5, 2.5?z?3.5, and 0?a?1, the alloy having a negative Seebeck coefficient and an electrical resistivity of 1 m?·cm or less at a temperature of 25° C. or higher. The metal material of the present invention is a novel material that has good thermoelectric conversion capability in the intermediate temperature region and excellent durability, and that is useful as an n-type thermoelectric conversion material.

Abstract: A transition metal hexacyanoferrate (TMH) cathode battery is provided. The battery has a AxMn[Fe(CN)6]y.zH2O cathode, where the A cations are either alkali or alkaline-earth cations, such as sodium or potassium, where x is in the range of 1 to 2, where y is in the range of 0.5 to 1, and where z is in the range of 0 to 3.5. The AxMn[Fe(CN)6]y.zH2O has a rhombohedral crystal structure with Mn2+/3+ and Fe2+3+ having the same reduction/oxidation potential. The battery also has an electrolyte, and anode made of an A metal, an A composite, or a material that can host A atoms. The battery has a single plateau charging curve, where a single plateau charging curve is defined as a constant charging voltage slope between 15% and 85% battery charge capacity. Fabrication methods are also provided.

Abstract: This invention includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by depositing a precursor having the predetermined stoichiometry onto the substrate and converting the deposited precursor into a photovoltaic absorber material. This invention further includes processes for making a photovoltaic absorber layer having a predetermined stoichiometry on a substrate by (a) providing a polymeric precursor having the predetermined stoichiometry; (b) providing a substrate; (c) depositing the precursor onto the substrate; and (d) heating the substrate.