Abstract: Provided are ITO particles having a non-rectangular parallelepiped shape and an aligned crystal orientation inside particles.

Abstract: Provided is ITO particles satisfying a relationship expressed in Expression (1) given below. 16×S/P2?0.330 . . . (1) (In the expression, S indicates a particle area in a TEM photographed image, and P indicates a perimeter of the particle).

Abstract: A display substrate, a display device, and a touch panel, the display substrate including a base substrate; and an electrode on the base substrate, the electrode including a first light transmitting layer, wherein the first light transmitting layer has a work function ranging from about 4.75 eV to about 4.9 eV, the first light transmitting layer includes a first transparent conductive oxide (TCO) layer and a first metal element doped in the first transparent conductive oxide layer, the first metal element being a group 2 metal element, the first metal element is included in the first light transmitting layer in an amount of about 0.01 atomic percent (atomic %) to about 5.00 atomic %, based on a total number of atoms in the first light transmitting layer.

Abstract: A composite for the cathode of Li-ion battery is disclosed and comprises: a base active material represented by Li1+a(N1?b?cCobMnc)O2 wherein 0?a?0.5, 0?b?0.4, 0?c?0.6, with b+c<1; and a coating on the base active material comprising a phase containing the components B2O3 or SnBxO2+3x/2?y/2Fy; wherein 0?x?5, 0<y<4+3x; wherein relative to the total amount of the base active material, the weight percentage of B element is not more than 2 wt %, the weight percentage of Sn element is not more than 5 wt %. A method for making a composite is disclosed and includes: mixing the base active material with the phase components and/or a precursor for the phase components; and firing the mixture obtained. The application provides a high capacity, long cycle life cathode material that is stabilized at high voltages.

Abstract: This disclosure provides a method for treating an etching waste liquid from an etching process of indium tin oxide comprising hydrochloric acid, acetic acid, tin ions, indium ions and water, comprising the steps of: distilling the etching waste liquid to obtain a distillate comprising hydrochloric acid and acetic acid and a post-distillation liquid comprising tin ions and indium ions; generating a precipitate by reacting tin ions in the post-distillation liquid with sulfide ions to remove tin ions from the solution so as to obtain a post-precipitation solution containing indium ions; and electrolyzing the post-precipitation solution to obtain crude indium.

Abstract: Disclosed are a cathode active material and a lithium secondary battery including the same, and a method of manufacturing the cathode active material, the method including: (a) manufacturing a lithium metal oxide according to formula 1 below: Li1+zNiaMnbCo1?(a+b)O2??(1) wherein 0?z?0.1, 0.1?a?0.8, 0.1?b?0.8 and a+b<1; (b) dry mixing the lithium metal oxide, and a precursor including zirconium and fluorine; and (c) changing the precursor including zirconium and fluorine into ZrO2 and substituting some of oxygen (O) anions with F by heat-treatment after dry mixing of step (b), wherein the cathode active material is coated with ZrO2 and F.

Abstract: The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment.

Abstract: A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X, the atomic ratio of the elements satisfying the following formulas (1) to (4): Group X: Mg, Si, Al, Sc, Ti, Y, Zr, Hf, Ta, La, Nd, Sm 0.10?In/(In+Sn+Zn)?0.85??(1) 0.01?Sn/(In+Sn+Zn)?0.40??(2) 0.10?Zn/(In+Sn+Zn)?0.70??(3) 0.70?In/(In+X)?0.99??(4).

Abstract: The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element.

Abstract: A cathode current collector for a lithium-air battery includes a carbon-free, conductive, porous matrix. The matrix may include a metal boride, a metal carbide, a metal nitride, a metal oxide and/or a metal halide. Example matrix materials are antimony-doped tin oxide and titanium oxide. A carbon-free cathode exhibits improved mechanical and electrochemical properties including improved cycle life relative to conventional carbon-containing porous cathode current collectors.

Abstract: A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.

Abstract: A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 ?m, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.

Abstract: An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10?In/(In+Ga+Sn)?0.60??(1) 0.10?Ga/(In+Ga+Sn)?0.55??(2) 0.0001<Sn/(In+Ga+Sn)?0.60??(3).

Abstract: This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+; (B) having a ratio of average Sn ionic radius to average Sb ionic radius of 1:(0.96 to 1.04); and (C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein the average Sn ionic radius is the average of ionic radii of Sn2+ and Sn4+, while the average Sb ionic radius is the average of ionic radii of Sb3+ and Sb5+.

Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.

Abstract: It is an object of the present invention to provide a transparent electroconductive tin oxide powder which has electroconductivity superior to that of conventional phosphorus-doped electroconductive tin oxide powders, undergoes less temporal change in air and gives coating films comprising the powder of the present invention a total light transmittance, haze and surface resistance that are superior to those of coating films comprising conventional phosphorus-doped electroconductive tin oxide powders. The fluorinated phosphorus-doped electroconductive tin oxide powder of the present invention is obtained by the steps of producing a phosphorus- and fluorine-containing tin hydroxide uniformly in an aqueous solution by addition of 0.5 to 5 parts by weight of phosphorus and 0.5 to 4.0 parts by weight of fluorine, based on 100 parts by weight of tin oxide, adsorbing a water-soluble polymer on the product, and then firing the product at a temperature of 400 to 700° C. under a reducing atmosphere.

Abstract: The present disclosure is directed to composite or articles for protective clothing, which include an anti-static layer. The antistatic layer can 1), include an antistatic agent comprising an electronically conductive material, and the antistatic layer can have a visible light transmission of at least 70%; 2) the anti-static layer can have a surface electrical resistivity (SER), and/or a water electrode resistivity (WER) of no greater than 1011 ohms/square and a visible light transmission of at least 70%; or 3) the anti-static layer has an electrical resistivity, measured in ohms/square, which varies by no more than 1.5 order of magnitude over a range of relative humidity of 5% to 95%, and a visible light transmission of at least 70%.

Abstract: The present invention relates to pigment granules which are distinguished by the fact that they are based on a support material, where the support material is coated with one or more flake-form effect pigments by means of an adhesion promoter. The pigment granules according to the invention are preferably used for the pigmentation of application media, in particular paints, plasters, lacquers, powder coatings and plastics, and in particular as scatter and effect granules, for example for the decoration of wallcoverings.

Abstract: A conductive adhesive includes 10 to 90 wt % of Sn—Bi system solder powder and the remainder of an adhesive containing organic acid, and the Sn—Bi system solder powder is composed of solder particles having a particle size L1 of 20 to 30 ?m and solder particles having a particle size L2 of 8 to 12 ?m, and a mixing ratio of the Sn—Bi system solder powder is such that the solder particles having a particle size of 20 to 30 ?m occupy 40 to 90 wt % with respect to the whole solder powder, and the remainder is occupied by solder particles having a particle size of 8 to 12 ?m.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: The present invention relates to negative active materials for rechargeable lithium batteries, manufacturing methods thereof, and rechargeable lithium batteries including the negative active materials. A negative active material for a rechargeable lithium battery includes a core including a material capable of carrying out reversible oxidation and reduction reactions and a coating layer formed on the core. The coating layer has a reticular structure.

Abstract: A tin oxide particle having a structure characterized by peaks in Raman spectroscopy at at least 37±9 cm?1, 57±9 cm?1, 97±9 cm?1, 142±9 cm?1, 205±9 cm?1, 255±9 cm?1. The tin oxide particle preferably has an infrared transmittance of 80% or less at a wavelength of 1500 nm. The tin oxide particle preferably exhibits electroconductivity. The tin oxide particle is preferably substantially free from a dopant element that develops electroconductivity.

Abstract: To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

Abstract: Provided herein are nanofibers and processes of preparing nanofibers. In some instances, the nanofibers are metal and/or ceramic nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 ?m or less, and a bulk resistance of 30 m?cm or less, the number of tin oxide aggregate particles having a diameter of 10 ?m or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract: A sputtering target including an oxide sintered body which includes In, Ga and Zn and includes a structure having a larger In content than that in surrounding structures and a structure having larger Ga and Zn contents than those in surrounding structures.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: This invention relates to the in-situ synthesis of multi-core electroconductive powders. The multi-core ECPs of the present invention are made using an in-situ synthesis method which eliminates the need for combining mixtures of various types of single-core ECPs in order to achieve the desired end-use product. The multi-core ECPs described herein exhibit very little coloration. They also exhibit low electrical resistivity and contain reduced amounts of antimony.

Abstract: A target for sputtering or a tablet for ion plating, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same are provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a ?-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 ?m, and a content of gallium is equal to or higher than 10% by atom and below 25% by atom as atom number ratio of Ga/(In+Ga) or the like.

Abstract: The present invention provides an electrochromic nanocomposite film. In an exemplary embodiment, the electrochromic nanocomposite film, includes (1) a solid matrix of oxide based material and (2) transparent conducting oxide (TCO) nanostructures embedded in the matrix. In a further embodiment, the electrochromic nanocomposite film farther includes a substrate upon which the matrix is deposited. The present invention also provides a method of preparing an electrochromic nanocomposite film.

Abstract: An electrolyte composition containing an ionic liquid and conductive particles, an electrolyte composition containing an ionic liquid and oxide semiconductor particles and optionally containing conductive particles, and an electrolyte composition containing an ionic liquid and insulating particles are provided. Furthermore, a photoelectric conversion element comprising: a working electrode, the working electrode comprising an electrode substrate and an oxide semiconductor porous film formed on the electrode substrate and sensitized with a dye; a counter electrode disposed opposing the working electrode; and an electrolyte layer made of these electrolyte compositions is provided.

Abstract: A process for manufacturing indium tin oxide (ITO) sputtering targets as described. The process includes the precipitation of indium and tin hydroxides, sintering in the absence of chloride ions, using the resultant oxide powders to prepare an aqueous slip with dispersing agent, binder, special high density promoting agents and compacting the slip in a specially surface coated porous mold using the method of slip casting followed by sintering the resultant compacted target body to yield high density ITO target.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film.

Abstract: A semiconductor oxide ink composition, a method of manufacturing the composition, and a method of manufacturing a photoelectric conversion element are provided. The semiconductor oxide ink composition for inkjet printing comprises a semiconductor oxide and a solvent, wherein the semiconductor oxide comprises 0.1 to 20 parts by weight relative to 100 parts by weight of the total composition.

Abstract: An ink composition for forming a chalcogenide semiconductor film and a method for forming the same are disclosed. The ink composition includes a solvent, a plurality of metal chalcogenide nanoparticles and at least one selected from the group consisted of metal ions and metal complex ions. The metal ions and/or complex ions are distributed on the surface of the metal chalcogenide nanoparticles and adapted to disperse the metal chalcogenide nanoparticles in the solvent. The metals of the metal chalcogenide nanoparticles, the metal ions and the metal complex ions are selected from a group consisted of group I, group II, group III and group IV elements of periodic table and include all metal elements of a chalcogenide semiconductor material.

Abstract: Provided are a composition for an oxide semiconductor, a method of preparing the composition, methods of forming an oxide semiconductor thin film and an electronic device using the composition. The composition for an oxide semiconductor includes a tin compound, a zinc compound, and a low electronegativity metal compound containing a metal with an electronegativity lower than zinc.

Abstract: A polymer composition comprises at least one substantially non-conductive polymer binder and at least first and second electrically conductive fillers. The first electrically conductive filler is comprised of particles having avoid-bearing structure; and the second electrically conductive filler is comprised of particles which are acicular in shape.

Abstract: Composite compounds of tin and lithium, silicon and lithium, or tin, silicon, and lithium having tin and silicon nano-dispersed in a lithium-containing matrix may be used as electrode materials and particularly anode materials for use with rechargeable batteries. Methods of making the composite compounds include the oxidation of alloys, the reaction of stabilized lithium metal powder with tin and silicon oxides, and the reaction of inorganic salts of lithium with tin and silicon containing compounds.

Abstract: The present invention relates to a transparent, electrically conductive floor care composition, in particular for antistatic flooring, which is distinguished by the fact that it comprises one or more conductive pigments.

Abstract: An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 m?cm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.

Abstract: Fluorine-doped tin oxide particles having a structure characterized by peaks at at least 123±5 cm?1, 139±5 cm?1, and 170±5 cm?1 in Raman spectroscopy. The particles preferably have additional Raman spectral peaks at 78±5 cm?1, 97±5 cm?1, 109±5 cm?1, 186±5 cm?1, and 207±5 cm?1. The particles preferably have a specific surface area of 10 to 300 m2/g.

Abstract: This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: An electroconductive particle having a core particle and a tin oxide-containing coating layer on the core particle. The tin oxide of the coating layer has a crystallite size of 70 to 200 ?. The electroconductive particle preferably has a ratio of R3 to R1 of 1 to 250, wherein R1 and R3 are respective surface resistivities of electroconductive films formed of a coating composition containing the electroconductive particle and prepared by 1-hour dispersing and 3-hour dispersing, respectively. The coating layer preferably comprises dopant element-free, electroconductive tin oxide.

Abstract: A sputtering target including an oxide sintered body, the oxide sintered body containing indium (In) and at least one element selected from gadolinium (Gd), dysprosium (Dy), holmium (Ho), erbium (Er) and ytterbium (Yb), and the oxide sintered body substantially being of a bixbyite structure.

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract: A chlorine-doped tin oxide particle exhibits peaks at at least 108±5 cm?1, 122±5 cm?1, and 133±5 cm?1 in Raman spectroscopy. The chlorine-doped tin oxide particle preferably has an additional Raman spectral peak at 337±10 cm?1. The chlorine-doped tin oxide particle preferably has a specific surface area of 10 to 300 m2/g. The chlorine-doped tin oxide particle preferably has an average primary particle size of 3 to 200 nm. The chlorine-doped tin oxide particle is preferably substantially free of oxygen deficiency.

Abstract: A dye-sensitized solar cell (DSC) is provided, made from an anode layer of tin oxide (SnO2) coated titanium oxide (TiO2) nanostructures that overlie a substrate top surface. A dye overlies the anode layer, and a cathode overlies the dye. The cathode may be a hole conducting layer having a solid state phase or a redox electrolyte, with a counter electrode. The TiO2 nanostructures may be TiO2 nanoparticles, TiO2 nanowires, or TiO2 nanotubes. In the case of TiO2 nanowires or TiO2 nanotubes, their center axes are perpendicular to the substrate top surface. Regardless of the TiO2 nanostructure morphology, the SnO2 coating thickness is in the range of 2 to 10 nanometers (nm). In one aspect, the SnO2 coated TiO2 nanostructures have a dielectric layer shell, which may have a thickness in the range of 0.3 to 2 nm.

Abstract: A gas sensitive material comprising SnO2 nanocrystals doped with In2O3 and an oxide of a platinum group metal, and a method of making the same. The platinum group metal is preferably Pd, but also may include Pt, Ru, Ir, and combinations thereof. The SnO2 nanocrystals have a specific surface of 7 or greater, preferably about 20 m2/g, and a mean particle size of between about 10 nm and about 100 nm, preferably about 40 nm. A gas detection device made from the gas sensitive material deposited on a substrate, the gas sensitive material configured as a part of a current measuring circuit in communication with a heat source.

Abstract: A composite anode active material including metal core particles and carbon nanotubes that are covalently bound to the metal core particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the composite anode active material.

Abstract: Buffer compositions comprising semiconductive oxide particles and at least one of (a) a fluorinated acid polymer and (b) a semiconductive polymer doped with a fluorinated acid polymer are provided. Semiconductive oxide particles include metal oxides and bimetallic oxides. Acid polymers are derived from monomers or comonomers of polyolefins, polyacrylates, polymethacrylates, polyimides, polyamides, polyaramides, polyacrylamides, polystrenes. The polymer backbone, side chains, pendant groups or combinations thereof may be fluorinated or highly fluorinated. Semiconductive polymers include polymers or copolymers derived from thiophenes, pyrroles, anilines, and polycyclic heteroaromatics. Methods for preparing buffer compositions are also provided.