Abstract: This invention relates to a dense ceramics having ESD dissipative characteristics, tunable volume and surface resistivities in semi-insulative range (103-1011 Ohm-cm), substantially pore free, high flexural strength, light colors, for desired ESD dissipation characteristics, structural reliability, high vision recognition, low wear and particulate contamination to be used as ESD dissipating tools, fixtures, load bearing elements, work surfaces, containers in manufacturing and assembling electrostatically sensitive microelectronic, electromagnetic, electro-optic components, devices and systems.

Abstract: The material for transient voltage suppressors is composed of at least two kinds of evenly-mixed powders including a powder material with non-linear resistance interfaces and a conductive powder. The conductive powder is distributed in the powder with non-linear resistance interfaces to relatively reduce the total number of non-linear resistance interfaces between two electrodes and, as a result, decrease the breakdown voltage of the components.

Abstract: The method is carried out in the following manner: An aqueous mixture solution containing barium chloride and titanium chloride is added into an aqueous oxalic acid solution, so that barium titanyl oxalate would be precipitated. Then the precipitates are aged, washed and filtered. The filtered barium titanyl oxalate precipitates are crushed, and dried. Then a thermal decomposition is carried out to obtain a agglomerated barium titanate powder, and this is crushed again to obtain the final barium titanate powder. In order to obtain barium titanate based powder such as Ba(Ti1−zZrz)O3, (Ba1−xCax)(Ti1−zZrz)O3, and (Ba1−x−yCaxSry)(Ti1−zZrz)O3, the desired elements (Ca, Sr, Zr and so on) are added to barium titanyl oxalate when crushed before thermal decomposition step. After thermal decomposition and crushing, the barium titanate based powder can be obtained.

Abstract: A two-layer coating for the outer surface of the display screen of a color cathode ray tube (CRT) includes an inner carbon black-based layer and an outer silica-based layer. The inner layer is antistatic, while the outer layer is antireflective. To compensate for the increased absorption of blue light by the carbon black particles, which results in a color video image having a yellowish tint, a blue additive, such as a pigment or dye, is added to the coating to adjust its light absorbance characteristics and provide uniform light absorbance over the entire visible spectrum of 400-700 nm for improved color video image presentation.

Abstract: A Zr-doped (Ba,Sr)TiO3 perovskite crystal material dielectric thin film. Such dielectric thin film is characterized by at least one of the characteristics including: (a) a breakdown strength of at least 1.3 MV/cm; (b) a leakage current of not more than 1×10−3 A/cm2 under applied voltage of about ±3V or above and at temperature of about 100° C. or above; and (c) an energy storage density of at least 15 J/cc. The dielectric thin film comprises zirconium dopant in the amount of 0.5% to 50% by total weight of the Zr-doped (Ba,Sr)TiO3 perovskite crystal material, preferably 2-15%, more preferably 4% to 14%, and most preferably 5% to 12%. Such dielectric thin film in a preferred aspect is deposited by a MOCVD process using metal precursors Ba(thd)2-polyamine, Sr(thd)2-polyamine, Zr(thd)4, and Ti(OiPr)2(thd)2 at a deposition temperature in the range from about 560° C. to 700° C.

Abstract: The present invention provides an ink jet head comprising a head substrate 1, a heat-generating resistor 3 and a pair of electrodes 4, which are attached on the head substrate 1, and a top plate 6 disposed above the head substrate 1, the ink jet head being capable of ejecting ink, with which the space between the head substrate 1 and the top plate 6 is filled, through an ink ejection opening by means of heat of the heat-generating resistor, wherein the heat-generating resistor is made of a silicon oxide material selected from the group consisting of (1) a material consisting of TaxSiOy (1.30≦x≦1.70 and 1.20≦y≦1.95), (2) a material consisting of NbxSiOy (1.4≦x≦1.9 and 1.4≦y≦1.9), (3) a TiC—SiO2 resistive material, a TiC content in the resistive material being set within a range from 55 to 90 mol %, and (4) a Ta—Ni—SiOx (1.2≦x≦2.

Abstract: Disclosed are a powder of indium-tin oxide aciculae suitable as an electroconductive filler for an electroconductive ink to be used for forming a transparent electroconductive film, a method for producing a raw material to be used for producing the powder of indium-tin oxide aciculae, which has a major diameter of 5 &mgr;m or more and a ratio of the major diameter to the minor diameter of 5 or more, an electroconductive paste capable of forming a light-transmitting electroconductive film having sufficient electroconductivity and light transmittance by printing, such as screen-printing, followed by high-temperature baking, and a light-transmitting electroconductive film to be formed from the paste. The raw material is produced by heating and concentrating an aqueous solution containing indium ions and nitrato ions to form a high-viscosity slurry followed by separating a powder of aciculae from the slurry. By calcining the raw material, a powder of indium-tin oxide aciculae is produced.

Abstract: There is provided a thin film resistor formed of titanium nitride containing oxygen in a solid solution condition.

Abstract: Provided is a semiconductor ceramic and a semiconductor ceramic element each having a room temperature specific resistance of 3 &OHgr;·cm or lower and a resistance temperature characteristic of 9%/° C. or more. The semiconductor ceramic is characterized in that the ratio R1/(R1+R2), in which R1 is the transgranular resistance value of the crystal particles and R2 is the intergranular resistance value of the crystal particles and R1+R2 is the overall resistance value representing the sum of R1 and R2, is about 0.35 to 0.85.

Abstract: Disclosed are (1) a titania-zirconia powder having at least a part of the zirconia solid-dissolved in the titania crystalline phase or at least a part of the titania solid-dissolved in the zirconia crystalline phase, (2) a titania-zirconia powder containing 3 to 30 wt % of zirconia and 0.5 to 10 wt % of yttria and containing less than 20 wt %, in total, of at least a complex oxide having a composition of ZrTiO4 or (Ti,Zr) O2, monoclinic phase zirconia, and tetragonal phase zirconia, wherein the titania-zirconia powder comprises an anatase phase, and which retains a specific surface area of 34 m2/g or more after heat-treated at 900° C. for 5 hours in the air, and (3) a titania-zirconia powder wherein the titania-zirconia powder (1) or (2) having an average particle size of 1 &mgr;m or smaller is mutually dispersed with an alumina powder; and processes for producing the powders are disclosed.

Abstract: Oxygen sensitive resistance materials for use with oxygen sensors, in particular &lgr; probes are described. These materials are based on the fact that with complex metal oxides it is possible—by adding suitable doping substances—to achieve a negligible temperature dependence of the electric resistance of these materials for different oxygen partial pressures and to preset it to a desired partial pressure value.

Abstract: A ceramic for the PTC thermistor having a resistivity at room temperature of 5 &OHgr;·cm or less, static withstanding voltage of 60 V/mm or more and temperature resistance coefficient of 9.0%/° C., having small dispersion of the resistance, is composed of principal components of about 30 to 97 mol % of BaTiO3, about 1 to 50 mol % of PbTiO3, about 1 to 30 mol % of SrTiO3 and about 1 to 25 mol % of CaTiO3 (the total content of them being 100 mol %), as well as about 0.1 to 0.3 mole of Sm, about 0.01 to 0.03 mole of Mn and 0 to about 2.0 mole of Si relative to 100 moles of the principal components, the composite material being preferably heat-treated in an oxidative atmosphere after being fired in a reducing or neutral atmosphere for obtaining the ceramic.

Abstract: Electron emission materials consisting of carbides, borides, and oxides, and related mixtures and compounds, of Group IVB metals Hf, Zr, and Ti, Group IIA metals Be, Mg, Ca, Sr, and Ba, and Group IIIB metals Sc, Y, and lanthanides La through Lu are used in electrodes. The electron emission materials include ternary Group IVB-IIIB, IVB-IIA, and IIIB-IIA oxides and quaternary Group IVB-IIIB-IIA oxides. These electron emission materials are typically contained in a refractory metal matrix formed of tungsten, molybdenum, tantalum, rhenium, and their alloys, but may also be used by themselves. These materials and electrodes have high melting points, low vapor pressures, low work functions, high electrical and thermal conductivity, and high thermionic electron emission and field emission properties.

Abstract: A layer crystal structure oxide, and memory element comprising same, comprising bismuth (Bi), a first element, a second element and oxygen (O), wherein the first element is at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb), and bismuth (Bi), the second element is at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), and tungsten (W), and the composition ratio of the bismuth with respect to the second element is larger than the stoichiometric composition ratio, wherein, the composition ratio of the bismuth with respect to the first element is in the range of (2±0.17)/(m−1) including the stoichiometric composition ratio 2/(m−1), where m is an integer from, and including, 2 to 5.