Abstract: A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells.

Abstract: The invention relates to a sealed thin-film device (10, 12, 14), to a method of repairing a sealing layer (20) applied to a thin-film device (30) to produce the sealed thin-film device, to a system (200) for repairing the sealing layer applied to the thin-film device to generate the sealed thin-film device and to a computer program product. The sealed thin-film device comprises a thin-film device and a sealing layer applied on the thin-film device for protecting the thin-film device from environmental influence. The sealed thin-film device further comprises locally applied mending material (40; 42, 44) for sealing a local breach (50) in the sealing layer. An effect of this sealed thin-film device is that the operational life-time of the sealed thin-film device is improved. Furthermore, the production yield of the production of sealed thin-film devices is improved.

Abstract: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a substrate; an organic light-emitting unit that includes a plurality of organic light-emitting devices formed on the substrate; and an encapsulation unit that seals the organic light-emitting unit. The encapsulation unit includes: a barrier layer and a planarization layer that are stacked on the organic light-emitting unit; and a cover layer that is disposed between the barrier layer and the planarization layer to cover a crack occurring in each of the organic light-emitting devices.

Abstract: Provided is an organic light emitting diode including an organic light-emitting part including a first electrode, an organic material layer having a light-emitting layer, and a second electrode, and an encapsulating layer included on an entire top surface of the organic light-emitting part. Here, the encapsulating layer has a structure in which at least two of a water barrier film, a glass cap, a metal foil and a conductive film are stacked. Accordingly, the diode may have excellent water and oxygen barrier effects, and deterioration of the diode or running failure may be prevented.

Abstract: Provided is a red phosphor having superior thermal and chemical stability and excellent luminous efficiency, wherein the red phosphor comprises a compound expressed in the composition formula: Az(Sr, M)2(Si, Al)O4?xNy:R(0<x<3, y=2x/3, 0.001<z<0.1), where A is at least one element selected from a group consisting of lithium (Li), potassium (K) and sodium (Na), M is at least one element selected from a group consisting of barium (Ba), magnesium (Mg), and calcium (Ca), and R is at least one element selected from a group consisting of lanthanide and a transition metal element.

Abstract: An emitter package comprising a light emitting diode (LED) mounted to the surface of a submount with the surface having a first meniscus forming feature around the LED. A matrix encapsulant is included on the surface and covering the LED. The outer edge of the matrix encapsulant adjacent the surface is defined by the meniscus forming feature and the encapsulant forms a substantially dome-shaped covering over said LED. A method for manufacturing an LED package by providing a body with a surface having a first meniscus holding feature. An LED is mounted to the surface with the meniscus holding feature around the LED. A liquid matrix encapsulant is introduced over the LED and the surface, the first meniscus holding feature holding the liquid matrix encapsulant in a dome-shape over the LED. The matrix encapsulant is then cured.

Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

Abstract: Disclosed is a light-emitting diode package according to an embodiment, including; a body having a cavity formed therein, a lead frame placed in the cavity; and a light emitting diode electrically connected to the lead frame while having a slope angle relative to the bottom surface of the cavity, wherein a light emitting part and a non-light emitting part are present on the light emitting diode, and wherein a connection part is provided in a region of the cavity to be connected to at least a region of the non-light emitting part.

Abstract: An electronic component has a housing body which comprises a semiconductor chip in a recess. The semiconductor chip in the recess is embedded in a casting compound made of a first plastic material having a first glass transition temperature. A cover element made of a second plastic material having a second glass transition temperature is arranged above the recess. The second glass transition temperature is lower than the first glass transition temperature.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.

Abstract: Provided is an organopolysiloxane and its use. The organopolysiloxane may exhibit excellent processibility and workability. In addition, when the organopolysiloxane is used as an encapsulant, it exhibits excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and an adhesive property. Moreover, the organopolysiloxane may provide an encapsulant exhibiting stable durability and reliability under severe conditions for a long time and having no whitening and surface stickiness.

Abstract: A light emitting diode package including a package body with a cavity, a plurality of light emitting diode (LED) chips in the cavity, a plurality of wires connected to the plurality of LED chips, and a plurality of lead frames in the package body, wherein the lead frames comprise a first lead frame electrically connected to a first electrode of a first LED chip, a second lead frame electrically connected to a second electrode of the first LED chip and a second electrode of a second LED chip, a third lead frame electrically connected to a first electrode of the second LED chip, and fourth lead frame electrically connected to a second electrode of a third LED chip. Further, ends of the lead frames are exposed outside of the package body and penetrate the package body, and the first electrodes are P electrodes and the second electrodes are N electrodes.

Abstract: A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape.

Abstract: Disclosed are an epoxy resin composition and a light emitting apparatus. The epoxy resin composition includes a triazine derivative epoxy resin and an alicyclic epoxy resin.

Abstract: The light-emitting device of the present invention includes LED chips provided on a ceramic substrate and a sealing material in which the LED chips are embedded. The sealing material contains a fluorescent substance and divided into a first fluorescent-substance-containing resin layer and a second fluorescent-substance-containing resin layer by a first resin ring and a second resin ring.

Abstract: An encapsulating sheet-covered semiconductor element includes a semiconductor element having one surface in contact with a board and the other surface disposed at the other side of the one surface and an encapsulating sheet covering at least the other surface of the semiconductor element. The encapsulating sheet includes an exposed surface that is, when projected from one side toward the other side, not included in the one surface of the semiconductor element and exposed from the one surface and the exposed surface has the other side portion that is positioned toward the other side with respect to the one surface of the semiconductor element.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: A light-emitting device includes an LED chip, and a case including a sidewall portion that surrounds the LED chip so as to reflect a light emitted from the LED chip. The case further includes a resin that includes a glass fiber and is integrally formed by injection molding. An average length of the glass fiber is greater than a thickness of the sidewall portion. The resin has a refractive index different from the glass fiber.

Abstract: The present invention relates to a film-like thermosetting silicone sealing material for sealing a semiconductor element by means of compression molding, the sealing material having an initial torque value of less than 15 dN·m as measured by an MDR (Moving Die Rheometer) at a molding temperature of from room temperature to 200° C., to a method for producing an LED by means of compression molding using the same, and to an LED produced by this method. The sealing material has excellent moldability, causes no problems such as overflow from a die, and has no defects such as voids.

Abstract: A multichip package structure includes a metal substrate, a circuit substrate and a light-emitting module. The metal substrate has a first mirror plane area and a second mirror plane area. The circuit substrate is disposed on the metal substrate. The circuit substrate includes a plurality of first conductive pads, a plurality of second conductive pads, a first passing opening for exposing the first mirror plane area, and a second passing opening for exposing the second mirror plane area. The light-emitting module includes a plurality of light-emitting units disposed on the first mirror plane area. Each light-emitting unit includes a plurality of LED chips disposed on the first mirror plane area. The LED chips of each light-emitting unit are electrically connected between the first conductive pad and the second conductive pad in series. Thus, the heat-dissipating efficiency and the light-emitting effect of the multichip package structure can be increased.

Abstract: A light-emitting device includes a light-emitting element mounted on a lead frame, and a sealing material sealing the light-emitting element and having a thickness of not more than 1 mm and including a silicone resin as a main component. The sealing material includes a first gas barrier layer that a physical property value obtained by dividing a difference between a value of an average spin-spin relaxation time of 1H nuclei at a resonance frequency of 25 MHz at 140° C. and that at 25° C. by 115 is not more than 3.5 and the average spin-spin relaxation time at 140° C. is not more than 500 ?sec.

Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

Abstract: A ceramic conversion element having a multiplicity of columnar regions arranged within a ceramic or vitreous matrix, wherein the columnar regions have a preferential direction which makes an angle of at most 45° with a normal to the main surface of the conversion element, at least either the columnar regions or the matrix convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range different from the first wavelength range and, the columnar regions are formed by wavelength-converting monocrystalline or ceramic fibers and/or monocrystalline or ceramic platelets, said fibers and/or said platelets are provided with a reflective coating.

Abstract: A solid-state light-emitting module includes a transparent substrate, a light emitting diode chip, a first package sealant, a second package sealant, and a wavelength selection structure layer. The transparent substrate includes a first surface, a second surface which is opposite to the first surface, and a side face surrounding and connecting the first surface and the second surface. The light emitting diode chip is fixed on the first surface to emit light with a first wavelength. The first package sealant is disposed on the first surface to cover the light emitting diode chip. The second package sealant is disposed on the second surface and opposite to the first package sealant. The wavelength selection structure layer is disposed on the side face of the transparent substrate for selectively reflecting or transmitting the light therethrough.

Abstract: An encapsulation member for a display device is disclosed. In one aspect, the encapsulation layer includes a first layer, a second layer formed over the first layer, and a third layer formed over the second layer. The third layer is formed of the same material as that of the first layer. An end of at least one of the first to third layers has a curved shape.

Abstract: A method for packaging an LED includes steps: providing a substrate with a circuit structure formed thereon, stacking the substrate on a supporting board, and arranging a plurality of LED dies on the substrate; providing a mold and a gelatinous-state fluorescent film, positioning the supporting board in the mold and covering the mold with the gelatinous-state fluorescent film to cooperatively define a receiving space among the fluorescent film, the mold and the supporting board, the substrate and the LED dies being received in the receiving space; exhausting air in the receiving space to attach the gelatinous-state fluorescent film on the LED dies; solidifying the gelatinous-state fluorescent film and removing the mold; forming an encapsulation on the substrate to cover the LED dies; cutting the substrate and removing the supporting board to obtain several individual LED packages.

Abstract: A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

Abstract: Apparatuses and methods for producing light emitting devices maximizing luminous flux output are disclosed. In one possible embodiment, a light emitting device comprises a substrate and a reflective layer at least partially covering the substrate. The reflective layer is non-yellowing, and may be substantially light transparent. One or more light emitting diode (LED) chips are disposed on the substrate. The light emitting device may emit white light. The reflective layer may comprise a silicone carrier with light reflective particles dispersed in the silicone carrier. A light diffusion lens may also be disposed on the substrate and surrounding the LED chips. Furthermore, one or more microspheres, light scattering particles, and/or phosphor particles may be dispersed in the lens. In one possible method for producing a light emitting device, a substrate is provided.

Abstract: An emitter package comprising a light emitting diode (LED) emitting light at a wavelength within a wavelength range and a plurality of phosphors. Each of the phosphors absorbs at least some light from the LED and re-emits a different wavelength of light. The package emits a combination of light from the LED and the plurality of phosphors, with the phosphors having excitation characteristics such that the emitter package emits light within a standard deviation of a target color for LEDs emitting at the wavelengths with the wavelength range. A method for fabricating emitter packages comprising fabricating a plurality of LEDs, each of which emits at a wavelength within a range of wavelengths. Each of the LEDs are arranged in a respective package with a plurality of conversion materials so that at least some light from each of the LEDs is absorbed and re-emitted by its corresponding conversion materials.

Abstract: A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.

Abstract: A display apparatus which can be uniformly sealed by an inhomogeneous laser beam is disclosed. One inventive aspect includes a display substrate, an encapsulation substrate and a sealing portion. On the display substrate, a display unit, including a display device, is formed. The encapsulation substrate is formed to face the display substrate. The sealing portion is formed to surround the display unit and bond the display substrate and the encapsulation substrate to each other.

Abstract: An organic light-emitting display and methods of manufacturing the same are disclosed. In one aspect, an organic light-emitting apparatus includes a substrate, a display unit on the substrate, a step compensation layer formed on the display unit and supplementing a step on a surface of the display unit, a first intermediate layer formed on the step compensation layer, and an encapsulation layer formed on the first intermediate layer and sealing the display unit.

Abstract: A light emitting device package is disclosed. The light emitting device package includes a body, first and second lead frames disposed on the body, and a light emitting device connected to the first and second lead frames, wherein at least one of the first and second lead frames includes first and second regions having different thicknesses.

Abstract: An optical semiconductor package has a base material that includes a principal surface, an optical semiconductor element that is located on the principal surface of the base material to project or receive light, and an optical transparency sealing layer that seals the optical semiconductor element while covering the principal surface of the base material. An air gap having a shape surrounding an optical axis of the optical semiconductor element is provided in the optical transparency sealing layer such that the light is reflected by an interface of a portion corresponding to an inner circumferential surface of the air gap in an interface formed by the air gap and the optical transparency sealing layer.

Abstract: A light-emitting diode (LED), including a first semiconductor layer defining several light-emitting regions and non-light-emitting regions; an active layer and a second semiconductor layer sequentially formed over the first semiconductor layer in the light-emitting regions; a transparent conductive layer formed over the second semiconductor layer; a Bragg reflector structure formed over the transparent conductive layer and including several first via holes; a metal layer formed over the Bragg reflector structure and connected to the transparent conductive layer through the first via holes; a passivation layer covering the metal layer and including several second via holes; several third via holes exposing the first semiconductor layer in the non-light-emitting regions; several first electrodes filling the third via holes and connected to the first semiconductor layer; and several second electrodes filling the second via holes and connected to the metal layer.

Abstract: This application relates to a curable composition and its use. The curable composition may exhibit excellent processibility and workability. The curable composition has excellent light extraction efficiency, crack resistance, hardness, thermal and shock resistance and an adhesive property after curing. The curable composition may provide a cured product exhibiting stable durability and reliability under severe conditions for a long time and having no whitening and surface stickiness.

Abstract: A light emitting device package is provided comprising a light emitting device including at least one light emitting diode and a body including a first lead frame on which the light emitting device is mounted and a second lead frame spaced apart from the first lead frame, wherein at least one of the first and second lead frames is extending to a bending region in a first direction by a predetermined length on the basis of an outer surface of the body and is bent in a second direction intersecting the first direction.

Abstract: Embodiments of the present description relate to the field of fabricating microelectronic structures. The microelectronic structures may include a glass routing structure formed separately from a trace routing structure, wherein the glass routing structure is incorporated with the trace routing substrate, either in a laminated or embedded configuration. Also disclosed are embodiments of a microelectronic package including at least one microelectronic device disposed proximate to the glass routing structure of the microelectronic substrate and coupled with the microelectronic substrate by a plurality of interconnects. Further, disclosed are embodiments of a microelectronic structure including at least one microelectronic device embedded within a microelectronic encapsulant having a glass routing structure attached to the microelectronic encapsulant and a trace routing structure formed on the glass routing structure.

Abstract: There is provided a manufacturing method of an LED module including: forming an insulating film on a substrate; forming a first ground pad and a second ground pad separated from each other on the insulating film; forming a first division film that fills a space between the first and second ground pads, a second division film deposited on a surface of the first ground pad, and a third division film deposited on a surface of the second ground pad; forming a first partition layer of a predetermined height on each of the division films; sputtering seed metal to the substrate on which the first partition layer is formed; forming a second partition layer of a predetermined height on the first partition layer; forming a first mirror connected with the first ground pad and a second mirror connected with the second ground pad by performing a metal plating process to the substrate on which the second partition layer is formed; removing the first and second partition layers; connecting a zener diode to the first mirror

Abstract: A non-chip LED illumination device includes a retaining layer having one or more chambers for engaging with light emitting diode elements each of which include an outer surface and two terminals disposed on the outer surface of the light emitting diode element. A covering layer is engaged onto the retaining layer and the light emitting diode element and includes one or more openings aligned with the light emitting diode elements respectively. One or more fluorescent members of different colors are engaged into the openings of the covering layer for allowing the light generated by the light emitting diode elements to emit through the fluorescent members of different colors.

Abstract: There is provided a wiring substrate. The wiring substrate includes: a heat sink; a first insulating layer on the heat sink; a wiring pattern on the first insulating layer, wherein the wiring pattern is configured to mount a light emitting element thereon; and a second insulating layer on the first insulating layer such that the wiring pattern is exposed from the second insulating layer.

Abstract: Optical assemblies comprising an optical device and a composition comprising a resin-linear organosiloxane block copolymer are disclosed. In some embodiments, the organosiloxane block copolymers has a weight average molecular weight of at least 20,000 g/mole and includes 40 to 90 mole percent disiloxy units of the formula [R12SiO2/2] arranged in linear blocks each having an average of from 10 to 400 disiloxy units [R12SiO2/2] per linear block, 10 to 60 mole percent trisiloxy units of the formula [R2—SiO3/2] arranged in non-linear blocks each having a weight average molecular weight of at least 500 g/mol, and 0.5 to 25 mole percent silanol groups. R1 is independently a C1 to C30 hydrocarbyl and R2 is independently a C1 to C20 hydrocarbyl. At least 30% of the non-linear blocks are crosslinked with another non-linear block and aggregated in nano-domains. Each linear block is linked to at least one non-linear block.

Abstract: A display panel includes a first substrate and a second substrate sealed by sealant, and an inorganic material thin film is also formed outside the sealant. The display panel possesses a better characteristic of water and oxygen isolation in a lateral direction. A manufacturing method of a display panel and a display device including the display panel are further disclosed.

Abstract: An organic light emitting diode display includes a flexible substrate, an organic light emitting diode disposed over the flexible substrate, and an encapsulation film disposed over the flexible substrate to encapsulate the organic light emitting diode, with the organic light emitting diode interposed between the encapsulation film and the flexible substrate. A thermal conduction layer contacts the flexible substrate, wherein the thermal conduction layer faces the organic light emitting diode and the flexible substrate is interposed between the thermal conduction layer and the organic light emitting diode. A first film is disposed over the encapsulation film, and a second film is disposed over the thermal conduction layer.

Abstract: A lighting device comprising a light emitter chip, a reflective cup and a lumiphor positioned between the chip and the cup. Also, a lighting device comprising a light emitter chip, a wire bonded to a first surface of the chip and a lumiphor which faces a second surface of the chip. Also, a lighting device comprising a light emitter chip, and a lumiphor, a first surface of the chip facing a first region of the lumiphor, a second surface of the chip facing a second region of the lumiphor. Also, a lighting device comprising a light emitter chip and first and second lumiphors, a first surface of the chip facing the second lumiphor, a second surface of the chip facing the first lumiphor. Also, methods of making lighting devices.

Abstract: A light emitting diode (LED) device comprises a first lead frame, a second lead frame, a LED die and at least one bump. The LED die is fixed on and electrically connected to the first lead frame. The second lead frame separated from the first lead frame with a distance is connected to the LED die. The bump disposed on at least one of the first lead frame and the second lead frame to identify a gripping space for allowing an electronic element inserted or gripped therein.

Abstract: An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.

Abstract: A method of producing an optoelectronic component including providing an epitaxially grown layer sequence on a growth substrate, which comprises a suitable layer for light emission; applying a metal layer to the epitaxially grown layer sequence; applying a molding support to the metal layer, the molding support including a support material with a first coefficient of thermal expansion and a fiber mesh with a second coefficient of thermal expansion functionally bonded to the support material; and detaching the growth substrate.

Abstract: An improved approach is described to implement an LED-based large area display which uses an array of single color solid state lighting elements (e.g. LEDs). In some embodiments, the panel comprises an array of blue LEDs, where each pixel of the array comprises three blue LEDs. An overlay is placed over the array of blue LEDs, where the overlay comprises a printed array of phosphor portions. Each pixel on the PCB comprised of three blue LEDs is matched to a corresponding portion of the overlay having the printed phosphor portions. The printed phosphor portions of the overlay includes a number of regions of blue light excitable phosphor materials that are configured to convert, by a process of photoluminescence, blue excitation light generated by the light sources into green or red and colored light. Regions of the overlay associated with generating blue light comprise an aperture/window that allows blue light to pass through the overlay.

Abstract: An object of the present invention is to provide an LED device that can achieve a large total luminance flux while also achieving a structure, using a phosphor sheet, that is compact in size and easy to produce and whose color emission is easy to manage, and a method for producing such an LED device.