Abstract: A charge transfer device for making a compact solid state imaging apparatus. The device has a sloping potential gradient in the vertical to horizontal charge coupling region to achieve an increasing fringe electrical field without increasing the actual electrode width or the actual channel widths. A first region, serving as the charge storage region, at the terminal end of the vertical charge transfer section, is broadened gradually towards the horizontal charge transfer section while narrowing the terminal end of the second region, serving as the charge barrier region, towards the horizontal charge transfer section. The effective width changes of the storage and barrier regions take place in a complementary manner within one vertical channel section so that the actual width of the channel section remains constant.

Abstract: A solid-state image-sensor comprises a sensor, a charge transfer part, a plurality of charge/voltage converters, a comparator and a detector. The sensor has a plurality of arrayed light-receiving portions, with each light-receiving portion converting incident light into a signal charge corresponding to the amount of incident light and accumulating the signal charges. The charge transfer part distributes between at least two systems the signal charge stored at one light-receiving portion part of the sensor and transferring the signal charge using different numbers of stages. The plurality of charge/voltage converters detect and convert into voltages the signal charges of the at least two systems transferred by the charge transfer part. The comparator carries out a level conversion on each of the outputs of the plurality of charge/voltage converters and the detector detects the level transition point of the comparator output signal and generates a binary signal.

Abstract: A charge transfer device of two-line read structure is formed with a first charge transfer path for transferring first-group charges, a second charge transfer path for transferring second-group charges, and a transfer gate portion (106). To complete the transfer operation of all the second-group charges outputted at a time, the transfer operation of the charges from the first transfer path to the second charge transfer path by the transfer gate portion is divided into a plurality of times. In addition, the second-group charges outputted at time are transferred for each divided set of pixels in each divided transfer operation.

Abstract: The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.

Abstract: A single-output CCD image sensor selectively transfers a normal or a mirror image without changing the combination of clock signals needed by the HCCD. The CCD image sensor comprises VCCD's arrayed in each row, photodiodes connected to the VCCD's through transfer gates, and an upper HCCD connected to one end of the VCCD's. A rotating part for connecting one end of the upper and lower HCCD's as used for one of the normal or mirror image serial transfers. A control gate formed in parallel between the upper and the lower HCCD is used for the other of the normal or mirror image serial transfers, and operates in parallel. An output circuit is connected to the other end of the lower HCCD.

Abstract: A CCD comprises a sensing array and a readout register extending adjacent an edge of the sensing array. The readout register has first and second rows of transfer cells. The first row of transfer cells is between the sensing array and the second row. The transfer cells of the first row are of lower capacity than the transfer cells of the second row and are separated from the transfer cells of the second row by a potential barrier.

Abstract: A MOS transistor for protection against electrostatic discharge includes a semiconductor substrate; an island including a source region and a drain region provided in the semiconductor substrate; an isolation region provided in the semiconductor substrate so as to surround the island; a gate insulating layer provided on the semiconductor substrate; a gate electrode provided on the gate insulating layer; and a distributing device for distributing an electric current generated by an electrostatic voltage applied to the drain region into the drain region.

Abstract: A charge-coupled device having an improved charge-transfer efficiency over a broad temperature range.

Abstract: A horizontal charge coupled device (HCCD) is provided with a multiple reset gate in order to establish a more stable, less noisy voltage in an output node floating diffusion. Charges are transferred from an input of the HCCD to the floating diffusion by multiple, overlapping gate structures. Signal charges are detected or read out from the floating diffusion through an amplifier/inverter circuit. Periodically, the voltage of the floating diffusion is established to a reference level by application of a reset signal to a multiple reset gate structure, which results in charges in the floating diffusion being transferred to a reset drain. Noise induced by the reset operation is lessened on average due to the multiple reset gate structure.

Abstract: A CCD shift register having a reading device, or charge/voltage conversion device, at one end. This reading device or charge/voltage conversion device includes a diode, a precharging transistor, and an amplifier with high input impedance. To improve the efficiency of the charge transfer and, more generally, the behavior of the register, especially at high frequencies, it is proposed to shape the final gate of the register, and the diode, in such a way that the width along which the gate is adjacent to the diode (i.e. the width along which the end of the channel is adjacent to the diode) is great while, at the same time, the diode surface area is kept small.

Abstract: A solid-state imaging device includes a semiconductor substrate, an array of cells on the substrate, a plurality of vertical charge transfer sections extending in a first direction on the substrate, and a horizontal charge transfer section extending in a second direction transverse to the first direction on the substrate and being coupled to the vertical charge transfer section. The cell array includes a plurality of columns of cells that are associated with a corresponding one of the vertical transfer sections. The cell columns include a predetermined number of spaced-part cells that are series-connected along the second direction to constitute a NAND type cell structure. At least one cell-to-cell charge transfer electrode overlies a channel region as defined between adjacent ones of the NAND cells in the substrate.

Abstract: A charge transfer device includes: a transfer channel for transferring a charge in a charge transfer direction; a charge detecting section having a diffusion layer for storing the charge transferred through the transfer channel and for inducing a voltage corresponding to the amount of the stored charge; and a transistor for detecting the induced voltage, the transistor having: a gate electrode formed on the diffusion layer, the gate electrode being in direct contact with the diffusion layer; a gate insulating film formed on the gate electrode; and a channel region formed above the gate electrode.

Abstract: Solid-state image sensing device is provided with a synthesizing section for synthesizing odd-field signal charges and even-field signal charges. The synthesizing section is a transfer path formed outside of the photosensitive region or vertical transfer paths formed in the photosensitive region. For the signal charge synthesis through vertical transfer path, after the integration, the signal charges are read simultaneously from the odd-line pixel group and the even-line pixel group. Further, it is possible to select either the method of outputting the odd-field signal charges and the even-field signal charges separately or the method of outputting the synthesized odd- and even-field signal charges.

Abstract: A solid-state imaging device which can generate finite difference data of images at different times. There are provided with photoelectrical converting sections each of which includes photodiodes disposed in a matrix array and receives incident light to generate signal charges. A signal charge difference generating section generates a signal charge difference at different times from the signal charges generated in the photoelectrical converting section. A signal charge difference transfer section transfers the signal charge difference generated as an output of the device.

Abstract: A charge-coupled device has a series register (A) having charge storage electrodes (3a) for defining charge storage wells and charge transfer electrodes (3b) for transporting charge between the charge storage wells and a parallel section (C) having channels (1a,1b) extending transversely of the series register (A). The parallel section (C) has charge storage electrodes (11a,12a,13a . . . Na) spaced apart along the channels, (1a,1b) to define a respective charge storage well with each channel to provide a respective row of charge storage wells extending transversely of the channels and has charge transfer electrodes (12b . . . Nb) for transferring charge between adjacent rows of charge storage wells, and a transfer gate (T1) for transferring charge between the series register (A) and an adjacent row of charge storage wells defined by the channels (1a,1b) and a first charge storage electrode (11a) of the parallel section.

Abstract: A solid-state imaging device. An intermediate portion of a channel region have a tapered width from one shift register in which the signal charges to be read-out toward the other shift register. Therefore, the potential distribution of the channel region along the charge transfer direction has a continuous down-slope toward the one shift register. Thus, reading-out electric field can be improved.

Abstract: A charge transfer device has a transfer section for transferring a signal charge along a transfer channel, and a pickup section connected to the transfer section for converting the signal charge received from the transfer section to a voltage signal, both sections being formed on a substrate. The transfer channel is bent generally at a right angle between the transfer section and the pickup section.

Abstract: A charge transfer device includes a first input stage converting a first input signal into first signal charge, a first shift register transferring the first signal charge with a first delay amount, a second input stage converting a second input signal into second signal charge and having a first switch for selectively inputting the second signal charge to a second shift register, a third input stage converting a third input signal into third signal charge and having a second switch for selectively inputting the third signal charge to a third shift register, and an adding section for selectively adding one of the second and third signal charge to the first signal charge. The second shift register transfers the second signal charge with a second delay amount and the third shift register transfers the third signal charge with a third delay amount.

Abstract: A solid imaging device that minimizes the degradation in charge transfer efficiency attributable to narrow channel effect by enlarging the apparent width of the horizontal output gate outlet. Miniaturization of the floating diffusion (FD) region is not hampered despite the apparent widening of the horizontal output gate outlet. The inventive imaging device utilizes a floating diffusion amplifier as the charge detector that detects a charge signal transferred from a horizontal CCD. In this device structure, ions are implanted into the substrate surface side of the region adjacent to the FD region in the horizontal output gate in such a manner that the channel potential of the adjacent region will become appropriately deeper than that of the forward-half region next to the adjacent region.

Abstract: In a solid state imaging device, a horizontal transfer unit has first and second transfer paths which are disposed in parallel and in which the transfer direction of image signals is changed according to the mode of a driving signal applied to the paths. One end of the first transfer paths is connected to one end of the second transfer path through a third transfer path. When a driving signal of a first mode is applied, the first path transfers image signals from the one end to the other end to output normal image signals. When a driving signal of a second mode is applied, the first path transfers image signals from the other end to the one end to transfer the image signals to the second transfer path via the third transfer path, and the second transfer path transfers image signals from the one end to the other end to output mirror image signals.

Abstract: A horizontal charge transfer register has an array of charge transfer sections for transferring signal charges in a charge transfer direction, the charge transfer sections including a final charge transfer section. A floating diffusion region is connected to the final charge transfer section through a horizontal output gate section. A pair of potential barrier regions or a potential well region extends from the final charge transfer section to the horizontal output gate section, for orienting an electric field in the charge transfer direction in the horizontal output gate section. The potential barrier regions are spaced from each other by a distance which is progressively smaller from the final charge transfer section toward the horizontal output gate section. The potential barrier regions define a charge transfer path therebetween which is substantially the same as or close to the width of the floating diffusion region.

Abstract: A solid-state image pick-up device is fabricated on a p-type semiconductor substrate, and having a plurality of photo-electric converters respectively having n-type impurity regions and formed in a surface portion of the semiconductor substrate at spacings, a shift register having an n-type charge transfer region separated from the n-type impurity regions by respective channel forming regions, a thin insulating film covering the channel forming regions and outlet subregions of the n-type impurity regions, and a transfer gate electrode extending on the thin insulating film, wherein the transfer gate electrode is shaped in such a manner as to create an electric field over each outlet subregion and the associated channel forming region so that carriers are accelerated from each outlet subregion through the associated channel forming region to the shift register.

Abstract: A magnetic field sensor, having a charge-coupled device formed in a semiconductor region is disclosed. The magnetic field sensor has first and second contact zones, made of a heavily doped semiconductor material of a first conductivity type, located on an outer surface of the semiconductor region which is made of a semiconductor material of a second conductivity type. The magnetic field sensor also has an insulating layer, located on the outer surface of the semiconductor region, which has passages for sensor connections associated with each contact zone. The charge-coupled device has a plurality of gate electrodes located on the insulating layer which are arranged perpendicularly to the desired direction of charge propagation through the charge-coupled device. One end of at least one centrally located electrode at least partially overlaps the first contact zone while another end at least partially overlaps the second contact zone.

Abstract: There is provided a pseudo bi-phase CCD having improved transmission efficiency that is easy for high-integration and can be designed by a simple process. The pseudo bi-phase CCD of the present invention has a gate electrode width which is reduced in a direction opposite to charge transmission direction in a gate electrode. In a charge coupled device having a plurality of gate electrodes formed on a semiconductor through which charges are transferred, the gate electrodes being separated by an insulation film, each of the gate electrodes includes a first part having a first width and a second width which is wider than the first width, the first width gradually increasing as it moves towards the second width formed in a direction of the charge transfer and a second part coupled to the first part, disposed in the charge transfer direction, the second part having the same width as the second width.