Abstract: A Fan-Out package having a main die and a dummy die side-by-side is provided. A molding material is formed along sidewalls of the main die and the dummy die, and a redistribution layer having a plurality of vias and conductive lines is positioned over the main die and the dummy die, where the plurality of vias and the conductive lines are electrically connected to connectors of the main die.

Abstract: A multi-chip device includes a first material within a substrate. The first material has a first coefficient of thermal expansion different than a second coefficient of thermal expansion of the substrate. A first chip overlies a first portion of the first material and a first portion of the substrate. A second chip overlies a second portion of the first material and a second portion of the substrate. The first material is between the first portion of the substrate and the second portion of the substrate.

Abstract: At least some embodiments of the present disclosure relate to an electronic package structure. The electronic package structure includes an electronic structure, a wiring structure disposed over the electronic structure, a bonding element connecting the wiring structure and the electronic structure, and a reinforcement element attached to the wiring structure. An elevation difference between a highest point and a lowest point of a surface of the wiring structure facing the electronic structure is less than a height of the bonding element.

Abstract: A method for manufacturing a package structure includes providing a carrier board; providing at least one die having a top surface, a bottom surface, and a side surface on the carrier board; and forming a protective layer to cover at least a portion of the side surface of the die. The die includes a substrate, a semiconductor layer, a gate structure, a source structure and a drain structure, at least one dielectric layer, and at least one pad. The semiconductor layer is disposed on the substrate. The gate structure is disposed on the semiconductor layer. The source and the drain structures are disposed on opposite sides of the gate structure. The dielectric layer covers the gate, source, and drain structures. The pad is disposed on the dielectric layer and penetrates through the dielectric layer to electrically contact with the gate, source or drain structure.

Abstract: An apparatus includes a substrate for mounting an integrated circuit. The substrate includes a primary layer including a first surface that is a first external surface of the substrate. The substrate includes an inner layer that is located below the primary layer and including a second surface. A portion of the second surface of the inner layer is exposed via an open area associated with the primary layer. The inner layer includes a first multiple of wire bond pads that are exposed via the open area associated with the primary layer.

Abstract: Semiconductor package includes a pair of dies, a redistribution structure, and a conductive plate. Dies of the pair of dies are disposed side by side. Each die includes a contact pad. Redistribution structure is disposed on the pair of dies, and electrically connects the pair of dies. Redistribution structure includes an innermost dielectric layer, an outermost dielectric layer, and a redistribution conductive layer. Innermost dielectric layer is closer to the pair of dies. Redistribution conductive layer extends between the innermost dielectric layer and the outermost dielectric layer. Outermost dielectric layer is furthest from the pair of dies. Conductive plate is electrically connected to the contact pads of the pair of dies. Conductive plate extends over the outermost dielectric layer of the redistribution structure and over the pair of dies. Vertical projection of the conductive plate falls on spans of the dies of the pair of dies.

Abstract: An antenna module includes an antenna substrate including an antenna pattern; a semiconductor package disposed on a lower surface of the antenna substrate, electrically connected to the antenna substrate, and having a semiconductor chip embedded therein; and an electronic component disposed at a side of the antenna substrate, electrically connected to the antenna substrate, and spaced apart from the semiconductor package by a predetermined distance. The antenna module includes a connection substrate connected to a portion of the antenna substrate, the connection substrate having an extension portion extending outward from the side of the antenna substrate, and the electronic component is disposed on the extension portion of the connection substrate to electrically connect to an inner wiring layer of the antenna substrate.

Abstract: A semiconductor chip or die is mounted at a position on a support substrate. A light-permeable laser direct structuring (LDS) material is then molded onto the semiconductor chip positioned on the support substrate. The semiconductor chip is visible through the LDS material. Laser beam energy is directed to selected spatial locations of the LDS material to structure in the LDS material a pat gstern of structured formations corresponding to the locations of conductive lines and vias for making electrical connection to the semiconductor chip. The spatial locations of the LDS material to which laser beam energy is directed are selected as a function of the position the semiconductor chip which is visible through the LDS material, thus countering undesired effects of positioning offset of the chip on the substrate.

Abstract: A substrate includes a first insulation layer, a passive component, a first through-hole structure, a second insulation layer and a second electrode. The first insulation layer has a top surface and a bottom surface. The passive component is embedded in the first insulation layer. The passive component includes a first conducting terminal. The first through-hole structure is formed in the first insulation layer. The first through-hole structure includes a conductive part and an insulation part disposed within the conductive part. The conductive part is in contact with the first conducting terminal and formed as a first electrode. The second insulation layer is disposed on portion of the conductive part that is close to the bottom surface of the first insulation layer. At least part of the second electrode is disposed on the second insulation layer. The second electrode is in contact with the first insulation layer.

Abstract: A semiconductor device includes a first wiring substrate having a first surface and a second surface opposite to the first surface, and including a plurality of first electrode pads on the first surface, and a second wiring substrate having a third surface facing the first surface and a fourth surface opposite to the third surface, and including a plurality of second electrode pads on the third surface. A plurality of first semiconductor chips are stacked between the first surface and the third surface. A first columnar electrode extends in an oblique direction with respect to a first direction substantially perpendicular to the first surface and the third surface, and connects between the plurality of first electrode pads and the plurality of second electrode pads. A first resin layer covers the plurality of first semiconductor chips and the first columnar electrode between the first surface and the third surface.

Abstract: Certain aspects of the present disclosure provide a capacitor assembly, a stacked capacitor assembly, an integrated circuit (IC) assembly comprising such a stacked capacitor assembly, and methods for fabricating the same. One exemplary capacitor assembly generally includes a first array of trench capacitors and a second array of trench capacitors. The second array of trench capacitors may be disposed adjacent to and electrically coupled to the first array of trench capacitors. Additionally, the second array of trench capacitors may be inverted with respect to the first array of trench capacitors.

Abstract: A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

Abstract: A system-on-wafer structure and a fabrication method. The structure includes a wafer substrate, an integrated chiplet, a system configuration board and a thermal module. The wafer substrate and the integrated chiplet are bonded through a wafer micro bump array and a chiplet micro bump array. The wafer substrate and the system configuration board are bonded through a copper pillar array on wafer substrate topside and a pad on system configuration board backside. A molding layer is provided between the wafer substrate and the system configuration board, and is configured to mold the wafer substrate, the integrated chiplet and the copper pillar array. Integrated chiplet are electrically connected to each other through a re-distributed layer in wafer substrate. The integrated chiplet is electrically connected to the system configuration board through the re-distributed layer and the copper pillar array. The thermal module is attached to the backside of the wafer substrate.

Abstract: Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first and second bottom dies on a package substrate. The semiconductor package includes first top dies on the first bottom die, second top dies on the second bottom die, and a pedestal on the first and second bottom dies. The pedestal comprises a high thermal conductive material and is positioned on a region of top surfaces of the first and second bottom dies. The semiconductor package includes an encapsulation layer over the first and second bottom dies, and surrounds the first and second top dies and the pedestal. The semiconductor package includes a TIM over the first and second top dies, pedestal, and encapsulation layer, and an integrated heat spreader (IHS) over the TIM. The pedestal is on a periphery region of the top surfaces of the first and second bottom dies.

Abstract: A heat sink includes first to fifth layers. The first layer supports a frame made of ceramics, is made of copper, and has a thickness t1. The second layer is laminated to the first layer, is made of molybdenum, and has a thickness t2. The third layer is laminated to the second layer, is made of copper, and has a thickness t3. The fourth layer is laminated to the third layer, is made of molybdenum, and has a thickness t4. The fifth layer is laminated to the fourth layer, is made of copper, and has a thickness t5. A formula 3?t1/t5?5 is satisfied. A formula 3?t3/t5?5 is satisfied.

Abstract: A terminal substrate includes a signal terminal disposed on a terminal surface of an insulation ceramic layer. An insulation resin layer of a flexible substrate includes a first surface facing the terminal surface, and a second surface on an opposite side of the first surface. A first signal pad disposed on the first surface is joined to the signal terminal. A first penetration conductive part penetrates the insulation resin layer from the first signal pad. A first signal line is disposed on the second surface. A second penetration conductive part penetrates the insulation resin layer from the first signal line. A second signal line is disposed on the first surface. A third penetration conductive part penetrates the insulation resin layer from the second signal line. A second signal pad is disposed on the second surface.

Abstract: A die includes a semiconductor substrate, a through-via penetrating through the semiconductor substrate, a seal ring overlying and connected to the through-via, and an electrical connector underlying the semiconductor substrate and electrically coupled to the seal ring through the through-via.

Abstract: A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

Abstract: A semiconductor device substrate is provided. The substrate includes an embedded trace substrate (ETS) portion. The ETS portion includes a first conductive layer embedded in the ETS portion at a first major surface. A portion of the first conductive layer is patterned to form a signal line. A non-conductive layer is disposed between the first conductive layer and a second conductive layer second embedded in the ETS portion. A third conductive layer is formed over the first major surface of the ETS portion. The third conductive layer is configured to form a stripline with the signal line of the first conductive layer.

Abstract: An integrated circuit package that includes symmetrical redistribution structures on either side of a core substrate is provided. In an embodiment, a device comprises a core substrate, a first redistribution structure comprising one or more layers, a second redistribution comprising one or more layers, a first integrated circuit die, and a set of external conductive features. The core substrate is disposed between the first redistribution structure and the second redistribution structure, the first integrated circuit die is disposed on the first distribution structure on the opposite side from the core substrate; and the set of external conductive features are disposed on a side of the second redistribution structure opposite the core substrate. The first redistribution structure and second redistribution structure have symmetrical redistribution layers to each other with respect to the core substrate.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a mold layer having a first surface and a second surface opposite the first surface, and a plurality of first dies embedded in the mold layer. In an embodiment, each of the plurality of first dies has a surface that is substantially coplanar with the first surface of the mold layer. In an embodiment, the electronic package further comprises a second die embedded in the mold layer. In an embodiment, the second die is positioned between the plurality of first dies and the second surface of the mold layer.

Abstract: An electronic device and methods for fabricating the same are disclosed herein that utilize a dam formed on a printed circuit board (PCB) that is positioned to substantially prevent edge bond material, utilized to secure a chip package to the PCB, from interfacing with the solder balls transmitting signals between the PCB and chip package.

Abstract: An electronic apparatus includes: an electronic module; and a flexible substrate electrically connected to the electronic module. The flexible substrate includes: a base film; a plurality of first contact pads arranged at one end on the base film in a first direction, and electrically connected to the electronic module; a plurality of second contact pads arranged at an other end on the base film in the first direction; a plurality of first wires arranged on the base film, and each electrically connecting one of the first contact pads and one of the second contact pads together; and a plurality of third contact pads arranged on the base film, each of the third contact pads being positioned along the first direction between one of the first contact pads and one of the second contact pads, and being electrically connected to one of the first wires.

Abstract: A semiconductor package includes a first die, a plurality of second dies and a through via. The second dies are disposed over and electrically connected to the first die. The through via is disposed between the second dies and electrically connected to the first die. The through via includes a first portion having a first width and a second portion having a second width different from the first width and disposed between the first portion and the first die. The first portion includes a first seed layer and a first conductive layer, and the first seed layer is disposed aside an interface between the first portion and the second portion.

Abstract: Methods, apparatuses and systems provide for technology that includes a transistor assembly for a power electronics apparatus having a plurality of transistor pairs arranged in a common plane, where for each pair of transistors one transistor is flipped relative to the other transistor. The technology further includes a first lead frame arranged parallel to and electrically coupled to the first transistor in each transistor pair, a second lead frame coplanar to the first lead frame and arranged parallel to and electrically coupled to the second transistor in each transistor pair, and a plurality of output lead frames arranged coplanar to each other, where each respective output lead frame is arranged parallel to and electrically coupled to a respective one pair of the plurality of transistor pairs.

Abstract: An electronic device includes a substrate having a first surface and a second surface opposite the first surface and including an input terminal part on the first surface, a wiring substrate having a flexibility connected to the input terminal part, and an electronic component on the second surface of the substrate. The wiring substrate has an opening through the wiring substrate, and the opening overlaps with the electronic component when the wiring substrate is bent to a side of the second surface of the substrate.

Abstract: A circuit carrier includes a first side, two layers arranged to define an intermediate space there between, with at least one of the two layers being electrically conductive and attached to the first side. The at least one of the two layers has a region deformed such as to exhibit an indentation and has a trace structure in the indentation. A first insulating material fills the intermediate space, and a second insulating material fills the indentation, A second side in opposition to the first side is shaped to have in the deformed region a cut-out for receiving a bare die such as to come into an electrical contact with the at least one of the two layers.

Abstract: A semiconductor device package includes a magnetically permeable layer having a top surface and a bottom surface opposite to the top surface. The semiconductor device package further includes a first conductive element in the magnetically permeable layer. The semiconductor device package further includes a first conductive via extending from the top surface of the magnetically permeable layer into the magnetically permeable layer to be electrically connected to the first conductive element. The first conductive via is separated from the magnetically permeable layer. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: Disclosed is a semiconductor package structure comprising a body, a plurality of first-layer, second-layer, third-layer and fourth-layer electrical contacts, wherein the first-layer, the second-layer, the third-layer and the fourth-layer electrical contacts are arranged sequentially from outside to inside on a bottom surface of the body in a matrix manner. Adjacent first-layer electrical contacts have two different spacings therein, and adjacent third-layer electrical contacts have the two different spacings therein.

Abstract: This invention provides a fan-out semiconductor package, the fan-out semiconductor package includes a frame including one or more insulating layers and having a penetration portion, a semiconductor chip disposed in the penetration portion of the frame and having a connection pad, a connection structure disposed on a lower side of the frame and the semiconductor chip and including a redistribution layer, a first encapsulant covering a back surface of the semiconductor chip and a first region of a top surface of an uppermost insulating layer among the one or more insulating layers of the frame and extending between a sidewall of the penetration portion and a side surface of the semiconductor chip, and a second encapsulant covering a second region of the top surface of the uppermost insulating layer among the one or more insulating layers of the frame and being in contact with a side surface of the first encapsulant on the frame.

Abstract: A terminal structure of a high-frequency signal connector and a manufacturing method thereof, in which multiple first terminals and multiple second terminals, multiple excavation areas and multiple trimming lines are trimmed from a tape, the first terminals and the second terminals are arranged alternately, each of the trimming lines is located between one of the first terminals and one of the second terminals that are disposed next to each other, followed by stamping the first terminals and the second terminals to form a first terminal set and a second terminal set. The first terminals and the second terminals are formed simultaneously on a single tape, and in turn, the period for fabricating dies and developing dies may be reduced, and less metal tapes is wasted after blanking of the first terminals and the second terminals, in order to decrease processes and reduce a manufacturing cost of the connector effectively.

Abstract: Embodiments disclose electronic packages with a die assembly and methods of forming such electronic packages. In an embodiment, a die assembly comprises a first die and a second die laterally adjacent to the first die. In an embodiment, the first die and the second die each comprise a first semiconductor layer, an insulator layer over the first semiconductor layer, and a second semiconductor layer over the insulator layer. In an embodiment, a cavity is disposed through the second semiconductor layer. In an embodiment, the die assembly further comprises a bridge substrate that electrically couples the first die to the second die, where the bridge is positioned in the cavity of the first die and the cavity of the second die.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a substrate an elastomer coupled to the substrate and a plurality of bondfingers on the elastomer. The substrate, the elastomer and the bondfingers are configured to cooperatively expand and retract.

Abstract: Packaging method for forming the panel-level chip device is provided. The panel-level chip device includes a plurality of first bare chips disposed on a supporting base, and a plurality of first connection pillars. The panel-level chip device also includes a first encapsulation layer, and a first redistribution layer. The first redistribution layer includes a plurality of first redistribution elements and a plurality of second redistribution elements. Further, the panel-level chip device includes a solder ball group including a plurality of first solder balls. First connection pillars having a same electrical signal are electrically connected to each other by a first redistribution element. Each of remaining first connection pillars is electrically connected to one second redistribution element. The one second redistribution element is further electrically connected to a first solder ball of the plurality of first solder balls.

Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.

Abstract: The present disclosure provides a light-adjusting glass and a smart vehicle window. The light-adjusting glass has a transmittance adjustment region and an encapsulation region; the light-adjusting glass includes: a first and second substrates opposite to each other, and a dye liquid crystal layer between the first and second substrates in the transmittance adjustment region, and a frame sealant in the encapsulation region; the first substrate includes a first base and a first electrode layer on a side of the first base proximal to the dye liquid crystal layer; the second substrate includes a second base and a second electrode layer on a side of the second base proximal to the dye liquid crystal layer; a conductive structure is provided in the frame sealant; a first and second voltage transmission structures electrically insulated from each other are on the first base.

Abstract: Provided is a power semiconductor module that can secure insulating properties. A semiconductor element is mounted on a resin-insulated base plate including a circuit pattern, a resin insulating layer, and a base plate. A case enclosing the resin-insulated base plate is bonded to the resin insulating layer with an adhesive. The resin insulating layer and the case are bonded together with a region enclosed by the resin insulating layer and a tapered portion of the case formed closer to the resin insulating layer being filled with the adhesive made of a material identical to that of the sealing resin. Air bubbles in the adhesive appear in the tapered portion opposite to the resin insulating layer.

Abstract: A display module includes a display panel, a flexible circuit board, a driving control chip, a touch control chip and a protective structure. The flexible circuit board is bonded to the display panel. The driving control chip is located on the display panel or the flexible circuit board. The touch control chip is located on the flexible circuit board or the display panel. The protective structure covers the driving control chip and/or the touch control chip. And the protective structure includes a first insulating layer, a heat dissipation layer and an electromagnetic shielding layer that are sequentially disposed away from the display panel.

Abstract: A package structure including a redistribution circuit structure, an insulator, a plurality of conductive connection pieces, a first chip, a second chip, an encapsulant, a third chip, and a plurality of conductive terminals is provided. The redistribution circuit structure has first and second connection surfaces opposite to each other. The insulator is embedded in and penetrates the redistribution circuit structure. The conductive connection pieces penetrate the insulator. The first and second chips are disposed on the first connection surface. The encapsulant is disposed on the redistribution circuit structure and at least laterally covers the first and second chips. The third chip is disposed on the second connection surface and electrically connected to the first and second chips through the conductive connection pieces. The conductive terminals are disposed on the second connection surface and electrically connected to the first chip or the second chip through the redistribution circuit structure.

Abstract: Semiconductor packages and package assemblies having active dies and external die mounts on a silicon wafer, and methods of fabricating such semiconductor packages and package assemblies, are described. In an example, a semiconductor package assembly includes a semiconductor package having an active die attached to a silicon wafer by a first solder bump. A second solder bump is on the silicon wafer laterally outward from the active die to provide a mount for an external die. An epoxy layer may surround the active die and cover the silicon wafer. A hole may extend through the epoxy layer above the second solder bump to expose the second solder bump through the hole. Accordingly, an external memory die can be connected directly to the second solder bump on the silicon wafer through the hole.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a first circuit region and a boundary surrounding the first circuit region. The routing structure also includes a first conductive trace coupled to a first conductive pad disposed in the first circuit region. The first conductive trace is inclined with respect to the boundary of the substrate. A method of forming a routing structure is also disclosed.

Abstract: A semiconductor package includes a connection member including an insulating layer and a redistribution layer, a semiconductor chip disposed on the connection member, and an inductance sensing part having a coil form and electrically connected to the semiconductor chip.

Abstract: A semiconductor device including a semiconductor chip disposed on a substrate having a conductive pattern, an insulating plate and a metal plate that are sequentially formed and respectively have the thicknesses of T2, T1 and T3. The metal plate has a plurality of depressions formed on a rear surface thereof. In a side view, a first edge face, which is an edge face of the conductive pattern, is at a first distance away from a second edge face that is an edge face of the metal plate, and a third edge face, which is an edge face of the semiconductor chip, is at a second distance away from the second edge face. Each depression is located within a depression formation distance from the first edge face, where: 0<depression formation distance?(0.9×T12/first distance), and/or (1.1×T12/first distance)?depression formation distance<second distance.

Abstract: A method includes bonding a second package component to a first package component, bonding a third package component to the first package component, attaching a dummy die to the first package component, encapsulating the second package component, the third package component, and the dummy die in an encapsulant, and performing a planarization process to level a top surface of the second package component with a top surface of the encapsulant. After the planarization process, an upper portion of the encapsulant overlaps the dummy die. The dummy die is sawed-through to separate the dummy die into a first dummy die portion and a second dummy die portion. The upper portion of the encapsulant is also sawed through.

Abstract: A resin composition contains a (A) thermoplastic component, a (B) thermosetting component, and a (C) inorganic filler, 5%-weight-reduction temperature of a hardened substance of the resin composition being 440 degrees C. or more.

Abstract: A manufacturing method of a semiconductor package includes at least the following steps. A rear surface of a semiconductor die is attached to a patterned dielectric layer of a first redistribution structure through a die attach material, where a thickness of a portion of the die attach material filling a gap between the rear surface of the semiconductor die and a recessed area of the patterned dielectric layer is greater than a thickness of another portion of the die attach material interposed between the rear surface of the semiconductor die and a non-recessed area of the patterned dielectric layer. An insulating encapsulant is formed on the patterned dielectric layer of the first redistribution structure to cover the semiconductor die and the die attach material. Other methods for forming a semiconductor package are also provided.

Abstract: An integrated circuit package that includes symmetrical redistribution structures on either side of a core substrate is provided. In an embodiment, a device comprises a core substrate, a first redistribution structure comprising one or more layers, a second redistribution comprising one or more layers, a first integrated circuit die, and a set of external conductive features. The core substrate is disposed between the first redistribution structure and the second redistribution structure, the first integrated circuit die is disposed on the first distribution structure on the opposite side from the core substrate; and the set of external conductive features are disposed on a side of the second redistribution structure opposite the core substrate. The first redistribution structure and second redistribution structure have symmetrical redistribution layers to each other with respect to the core substrate.

Abstract: A semiconductor module including a semiconductor element which is bonded to a wiring pattern part and connects or disconnects two main electrode terminals to or from each other according to a drive signal applied to a gate electrode terminal, includes a deterioration detecting circuit configured to use one main electrode terminal of the two main electrode terminals of the semiconductor element with an applied DC voltage, as a reference potential, and detect deterioration of a joining part of the semiconductor element on the basis of a gate voltage which is the voltage between the one main electrode terminal and the gate electrode terminal and an inter-main-electrode voltage which is the voltage between the one main electrode terminal and the other main electrode terminal, and outputs an alarm signal.

Abstract: A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.