Abstract: A semiconductor package includes a package substrate having a top surface and a bottom surface, an interposer mounted on the top surface of the package substrate, a first semiconductor die and a second semiconductor die mounted on the interposer in a side-by-side manner, and a stiffener ring secured to the top surface of the package substrate. The stiffener ring encircles the first semiconductor die and the second semiconductor die. The stiffener ring comprises a reinforcement rib striding across the interposer.

Abstract: The present invention provides a method of manufacturing a semiconductor device to improve the manufacturing yield of the semiconductor device. The manufacturing method includes the steps of: forming a groove extending in a first direction (y direction) across a first power transistor formation region and a second power transistor formation region, in a back surface of a semiconductor wafer; filling the groove with a conductor film by forming the conductor film on the back surface in which the groove is formed; and exposing the back surface of the semiconductor wafer by removing a portion of the conductor film.

Abstract: One semiconductor device includes a wiring substrate, a first semiconductor chip that is mounted on one surface of the wiring substrate, a second semiconductor chip that is laminated on the first semiconductor chip so as to form exposed surfaces where the surface of the first semiconductor chip is partially exposed, silicon substrates that are mounted on the exposed surfaces and serve as warping control members, and an encapsulation body that is formed on the wiring substrate so as to cover the first semiconductor chip, the second semiconductor chip and the silicon substrates.

Abstract: A semiconductor device and method for providing an enhanced removal of heat from a semiconductor die within an integrated fan out package on package configuration is presented. In an embodiment a metal layer is formed on a backside of the semiconductor die, and the semiconductor die along and through vias are encapsulated. Portions of the metal layer are exposed and a thermal die is connected to remove heat from the semiconductor die.

Abstract: A system module package is disclosed. The system module package includes: a substrate; a first electrical component and a second electrical component disposed on a top surface of the substrate; and a plurality of bond wires disposed adjacent to at least a first side of the first electrical component and in between the first and second electrical components. The plurality of bond wires are configured to attenuate EMI of a frequency of interest traveling from the first electrical component toward the second electrical component, or from the second electrical component toward the first electrical component. Each of the plurality of bond wires has at least a first end that is mechanically coupled to the top surface of the substrate and has a highest point that is a height, H, from the top surface of the substrate.

Abstract: A fan-out electronic component package includes a core, a first electronic component, a first encapsulant, a connection member, a second electronic component, and a second encapsulant. The core member includes a through-hole, wiring layers and vias configured to electrically connect the wiring layers to each other. The first electronic component is disposed in the through-hole, and comprising filters configured to filter different frequency bands. The first encapsulant covers portions of the core member and the first electronic component, and fills portions of the through-hole. The connection member is disposed on the core member and the first electronic component, and includes a redistribution layer electrically connected to the wiring layers and the first electronic component. The second electronic component is disposed on the connection member and electrically connects to the redistribution layer. The second encapsulant is disposed to cover the second electronic component.

Abstract: A semiconductor device includes a memory cell array, pad groups, a first option pad, a second option pad and a data input multiplexer block configured to transmit data, input through all or part of the pad groups, to the memory cell array based on whether the first option pad and a ground are connected to each other, wherein the data input multiplexer block is configured to select first pad groups among the pad groups or second pad groups among the pad groups as the part of the pad groups based on whether the second option pad and the ground are connected to each other.

Abstract: An electronic safety switching device comprising at least a first and a second signal processing channel to which input signals may be supplied for signal processing. The first and second signal processing channels provide processed output signals, wherein the first and the second signal processing channels process the supplied input signals redundantly with respect to one other. The first and the second signal processing channels are each formed as integrated circuits, wherein the first signal processing channel is arranged monolithically on a first semiconductor substrate, and the second signal processing channel is arranged monolithically on a second semiconductor substrate. Furthermore, the first and the second semiconductor substrates are combined into a stack to form a one-piece electronic component.

Abstract: In accordance with an embodiment, a semiconductor component includes a support having a side in which a device receiving structure and an interconnect structure are formed and a side from which a plurality of leads extends. A semiconductor device having a control terminal and first and second current carrying terminals and configured from a III-N semiconductor material is mounted to the device receiving structure. The control terminal of the first electrical interconnect is coupled to a first lead by a first electrical interconnect. A second electrical interconnect is coupled between the first current carrying terminal of the semiconductor device and a second lead. The second current carrying terminal of the first semiconductor device is coupled to the device receiving structure or to the interconnect structure.

Abstract: A method includes forming one or more vias in a substrate, forming a first photoresist layer on a top surface of the substrate and a second photoresist layer on a bottom surface of the substrate, patterning the first photoresist layer and the second photoresist layer to remove at least a first portion of the first photoresist layer and at least a second portion of the second photoresist layer, filling the one or more vias, the first portion and the second portion with solder material using injection molded soldering, and removing remaining portions of the first photoresist layer and the second photoresist layer.

Abstract: In an example implementation, an integrated circuit (IC) includes: a plurality of transistors disposed in a plurality of locations on a die of the IC; conductors coupled to terminals of each of the plurality of transistors; a digital-to-analog converter (DAC), coupled to the conductors, to drive voltage signals to the plurality of transistors in response to a digital input; and an analog-to-digital converter (ADC), coupled to at least a portion of the conductors, to generate samples in response to current signals induced in the plurality of transistors in response to the voltage signals, the samples being indicative of at least one electrostatic characteristic for the plurality of transistors.

Abstract: A 3D semiconductor device and structure, including: a first die including first transistors and first interconnect, overlaid by a second die including second transistors and second interconnect, where the first die has a first die area and the second die has a second die area, where the first die area is at least 10% larger than the second die area, and where the second die has a thickness of less than four microns.

Abstract: One semiconductor device includes a wiring substrate, a first semiconductor chip that is mounted on one surface of the wiring substrate, a second semiconductor chip that is laminated on the first semiconductor chip so as to form exposed surfaces where the surface of the first semiconductor chip is partially exposed, silicon substrates that are mounted on the exposed surfaces and serve as warping control members, and an encapsulation body that is formed on the wiring substrate so as to cover the first semiconductor chip, the second semiconductor chip and the silicon substrates.

Abstract: A packaged MEMS device, wherein at least two support structures are stacked on each other and are formed both by a support layer and a wall layer coupled to each other and delimiting a respective chamber. The chamber of the first support structure is upwardly delimited by the support layer of the second support structure. A first and a second dice are accommodated in a respective chamber, carried by the respective support layer of the first support structure. The support layer of the second support structure has a through hole allowing wire connections to directly couple the first and the second dice. A lid substrate, coupled to the second support structure, closes the chamber of the second support structure.

Abstract: Disclosed is an integrated circuit packaging system that includes first and second microchips. Each microchip includes a top surface, a surface, one or more quilt package nodules fabricated on said top surface, and one or more bottom surface connectors. The system also includes a substrate to which the first and second microchips are mounted. The first and second microchips are connected via the quilt package nodules.

Abstract: An electronic component package includes first and second wiring parts including insulating layers, conductive patterns formed in the insulating layers, and conductive vias penetrating through the insulating layers, to be connected to the conductive patterns, respectively; a frame disposed between the first and second wiring parts and having conductive connection parts electrically connecting one or more through-holes with the first and second wiring parts and an electronic component disposed to be surrounded by the through-hole, to thereby be connected to the first wiring part, wherein the conductive patterns formed to be adjacent to the electronic component among the conductive patterns of the first wiring part are embedded in the insulating layer of the first wiring part.

Abstract: A method of manufacturing a semiconductor package includes providing a substrate including a mounting region having a recess space for accommodating a semiconductor chip and a connection region surrounding the mounting region, providing a semiconductor chip in the mounting region, the semiconductor chip including a connection pad provided on a top surface of the semiconductor chip, forming a protective layer covering a top surface of the substrate and the top surface of the semiconductor chip, forming a photosensitive insulating layer on the protective layer after forming the protective layer, patterning the photosensitive insulating layer thereby exposing the protective layer, removing the exposed protective layer, and forming a redistribution line to be electrically connected to the connection pad.

Abstract: Various semiconductor chip devices with stacked chips are disclosed. In one aspect, a semiconductor chip device includes a stack of plural semiconductor chips. Each two adjacent semiconductor chips of the plural semiconductor chips is electrically connected by plural interconnects and physically connected by a first insulating bonding layer. A first stack of dummy chips is positioned opposite a first side of the stack of semiconductor chips and separated from the plural semiconductor chips by a first gap. Each two adjacent of the first dummy chips are physically connected by a second insulating bonding layer. A second stack of dummy chips is positioned opposite a second side of the stack of semiconductor chips and separated from the plural semiconductor chips by a second gap. Each two adjacent of the second dummy chips are physically connected by a third insulating bonding layer.

Abstract: The teachings of the present disclosure relate to electrical circuits and embodiments may include a circuit arrangement and a current converter comprising said circuit arrangement. An example circuit arrangement may include: a carrier part; a power component; a cooling channel for conveying a cooling agent; and a busbar conducting a current to the power component. The busbar may be arranged on the carrier part and have a region with a first surface and a second surface arranged opposite the first surface. The region may project away from the carrier part into the cooling channel. The power component may be arranged on the first surface of the region and connected to the region in an electrically conductive and mechanical manner.

Abstract: According to an aspect, a semiconductor power module includes a substrate, a semiconductor device coupled to the substrate, a bond wire coupled to the semiconductor device, and a first molding material layer disposed on the substrate. The first molding material layer encapsulates a first portion of the bond wire. The bond wire has a second portion disposed outside of the first molding material layer. The semiconductor power module includes a second molding material layer disposed on the first molding material layer. The second molding material layer encapsulates the second portion of the bond wire. The second molding material layer has a hardness less than a hardness of the second molding material layer.

Abstract: Fusible instructions and logic provide OR-test and AND-test functionality on multiple test sources. Some embodiments include a processor decode stage to decode a test instruction for execution, the instruction specifying first, second and third source data operands, and an operation type. Execution units, responsive to the decoded test instruction, perform one logical operation, according to the specified operation type, between data from the first and second source data operands, and perform a second logical operation between the data from the third source data operand and the result of the first logical operation to set a condition flag. Some embodiments generate the test instruction dynamically by fusing one logical instruction with a prior-art test instruction. Other embodiments generate the test instruction through a just-in-time compiler. Some embodiments also fuse the test instruction with a subsequent conditional branch instruction, and perform a branch according to how the condition flag is set.

Abstract: The present disclosure discloses an electroluminescent display and the encapsulation method thereof. The electroluminescent display comprises: a substrate having encapsulation units provided on a side surface of the substrate; a cover plate covering the substrate, wherein the cover plate together with the encapsulation units defines a first chamber and a second chamber, the second chamber surrounds the first chamber; an electronic device provided on the substrate and located within the first chamber, wherein the first chamber is filled with inert gas and the second chamber is filled with a hydrophobic liquid. The electroluminescent display according to an embodiment of the present disclosure can prevent water vapor and oxygen from entering the electronic device. The entire system has a good sealing performance, such that a service life of the electronic device can be greatly extended.

Abstract: Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.

Abstract: A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Abstract: A subset of mobile devices is selected from a set of mobile devices located in a local area. From a mobile device in the subset, a magnetic measurement value obtained by performing a magnetic measurement is received. The magnetic measurement value comprises a change in a magnetic property of an immediate surrounding ambient environment of the mobile device. When the magnetic measurement corresponds to a deviation in a network condition in a portion of a network, the portion being located in the local area, a conclusion is output that the deviation is caused by an electromagnetic disturbance (EMD), where an effect of the EMD causes the magnetic measurement value. A notification including an indication of the EMD and an identification of the local area is generated.

Abstract: In a general aspect, an apparatus can include a leadframe including a plurality of leads configured to be coupled with a printed circuit board. The plurality of leads can be disposed along a single edge of the apparatus. The apparatus can also include an assembly including a substrate and a plurality of semiconductor die disposed on the substrate. The assembly can being mounted on the leadframe. The apparatus can further include an inductor having a first terminal and a second terminal. The first terminal of the inductor can being coupled with the leadframe via a first contact pad, and the second terminal of the inductor can be coupled with the leadframe via a second contact pad. The leadframe, the assembly and the inductor can be arranged in a stacked configuration.

Abstract: A compartment EMI shield is provided that is suitable for use in system module packages having thin form factors and/or smaller widths and/or lengths. The compartment EMI shield comprises a fence arranged along a compartment boundary at least in between first and second sets of electrical components of the system module package. The fence being configured to attenuate EMI of a frequency of interest traveling in at least one of a first direction and a second direction, where the first direction is from the first set of electrical components toward the second set of electrical components and the second direction is from the second set of electrical components toward the first set of electrical components.

Abstract: The present disclosure relates to a semiconductor package, and more particularly, to a fan-out semiconductor package in which connection terminals may extend outwardly of a region in which a semiconductor chip is disposed. In the fan-out semiconductor package, a circuit density of a redistribution layer may be increased even in a limited area.

Abstract: A semiconductor package may be composed of a variety of different types of semiconductor chips of different sizes and support structures stacked within the semiconductor package. Semiconductor chips having a larger chip size may be stacked above smaller semiconductor chips. Smaller chips may be included in a layer of the semiconductor package along with a support structure which may assist supporting upper semiconductor chips, such as during a wire bonding process connecting bonding wires to chip pads of the semiconductor chips above the support structure. Use of different thicknesses of die attach film may allow for a further reduction in height of the semiconductor package.

Abstract: Chip package structures and methods for forming the same are provided. The chip package structure includes a first protection layer and a first chip disposed over the first protection layer. The chip package structure further includes a first photosensitive layer surrounding the first chip and covering the first chip and a redistribution layer formed over the first photosensitive layer.

Abstract: A packaged semiconductor structure includes an interconnect layer and a first microelectronic device on a first major surface of the interconnect layer. The structure also includes a substrate having a cavity, wherein the cavity is defined by a vertical portion and a horizontal portion, wherein the vertical portion surrounds the first device, the horizontal portion is over the first device, and the first device is between the horizontal portion and the first major surface of the interconnect layer such that the first device is in the cavity. The structure further includes a second microelectronic device attached to the horizontal portion of the substrate, and encapsulant on the interconnect layer and surrounding the first device, the substrate, and the second device, such that the substrate is embedded in the encapsulant.

Abstract: Disclosed is a semiconductor package. The semiconductor package may include a substrate a semiconductor chip mounted over a surface of the substrate such that an active surface of the semiconductor chip faces the surface of the substrate. The semiconductor chip and substrate may be configured for shielding or scattering electromagnetic waves.

Abstract: A micro-transfer printable electronic component includes one or more electronic components, such as integrated circuits or LEDs. Each electronic component has device electrical contacts for providing electrical power to the electronic component and a post side. A plurality of electrical conductors includes at least one electrical conductor electrically connected to each of the device electrical contacts. One or more electrically conductive connection posts protrude beyond the post side. Each connection post is electrically connected to at least one of the electrical conductors. Additional connection posts can form electrical jumpers that electrically connect electrical conductors on a destination substrate to which the printable electronic component is micro-transfer printed. The printable electronic component can be a full-color pixel in a display.

Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.

Abstract: The invention describes a printed circuit board with a top side and a bottom side, the printed circuit board comprising at least two electrically conductive layers (112, 114, 116, 212, 214, 312, 314, 212i, 214i, 212j, 214j) for transmitting electrical current and at least one electrically insulating layer (102, 104, 106, 108, 202, 204, 302, 304, 202i, 204i, 202j, 204j) comprising electrically insulating material, wherein the electrically conductive layers (112, 114, 116, 212, 214, 312, 314, 212i, 214i, 212j, 214j) and the electrically insulating layer (102, 104, 106, 108, 202, 204, 302, 304, 202i, 204i, 202j, 204j) are arranged in an alternating assembly such that the two electrically conductive layers (112, 114, 116, 212, 214, 312, 314, 212i, 214i, 212j, 214j) are electrically insulated with respect to each other by means of the electrically insulating layer (102, 104, 106, 108, 202, 204, 302, 304, 202i, 204i, 202j, 204j), wherein each of the electrically conductive layers (112, 114, 116, 212, 214, 312, 314,

Abstract: A semiconductor device has a first semiconductor die and second semiconductor die with a conductive layer formed over the first semiconductor die and second semiconductor die. The second semiconductor die is disposed adjacent to the first semiconductor die with a side surface and the conductive layer of the first semiconductor die contacting a side surface and the conductive layer of the second semiconductor die. An interconnect, such as a conductive material, is formed across a junction between the conductive layers of the first and second semiconductor die. The conductive layer may extend down the side surface of the first semiconductor die and further down the side surface of the second semiconductor die. An extension of the side surface of the first semiconductor die can interlock with a recess of the side surface of the second semiconductor die. The conductive layer extends over the extension and into the recess.

Abstract: A lead frame includes a plurality of circuit patterns which each have a die pad and an electrode terminal portion and are disposed in a band shape, a tie bar, a frame portion and a suspension lead. Cut are a connection portion between electrode terminals and the frame portion, a connection portion between the frame portion and the tie bar at both end portions in a disposition direction of circuit patterns, and a connection portion from a connection part of the frame portion with the tie bar, between the circuit patterns to a part of the frame portion extending in the disposition direction. The electrode terminal portion is bent to extend to a direction of an upper surface of a semiconductor element. The lead frame is collectively resin-sealed while exposing the tie bar and the electrode terminal portion above the tie bar.

Abstract: In a method of forming an assembly including projecting or protruding nodules, a substrate is provided that supports an electrical circuit. One or more cavities are formed in the substrate, a conductive pad is formed in each cavity, and one or more conductive traces are formed on the substrate. Each conductive trace connects a conductive pad to a location, node, or terminal of the electrical circuit. A part of the substrate is removed to form the assembly that includes the electrical circuit, the one or more conductive traces, and a portion of each conductive pad projecting or protruding from the substrate. The electrical circuit can be formed on the substrate, which can be a PCB, or can be formed on a microchip supported by the substrate, which can be formed of semiconductor material, e.g., a semiconductor wafer.

Abstract: A package on package structure may be formed by fabricating or providing a bottom package having a substrate, at least one die on top of the substrate, and bonding pads on the top of the substrate. Next, a frame is formed on the bonding pads and connected to the bonding pads. Next, a package material is molded over the top of the substrate to encapsulate the frame, the die, and the pads or substantially encapsulates these components. Next, a portion of the molded package material is removed to expose at least a portion of the frame. The exposed frame portions are formed such that a desired fan in or fan out configuration is obtained. Next, a non-conductive layer is formed on the exposed frame. Last, a second package having a die or chip is connected to the exposed portion of the frame to form a package on package structure.

Abstract: A chip on film package includes a base film, a chip and a heat-dissipation sheet. The base film includes a first surface. The chip is disposed on the first surface and having a chip length along a first axis of the chip. The heat-dissipation sheet includes a covering portion and a first extending portion connected to the covering portion and attached to first surface. The covering portion at least partially covers the chip and having a first length along the first axis. The first extending portion has a second length along the first axis substantially longer than the first length of the covering portion, and the covering portion exposes a side surface of the chip, wherein the side surface connects a top surface and a bottom surface of the chip.

Abstract: A semiconductor device may include a plurality of dummy wirings formed on a substrate at different vertical levels and electrically floated and a plurality of dummy contact plugs each electrically connected between two adjacent dummy wirings of the plurality of dummy wiring of the plurality of dummy wirings. No dummy wiring of the plurality of dummy wirings is electrically connected to a terminal of any one of a plurality of transistors included in the substrate.

Abstract: Systems, devices and methods related to stacked band selection switch devices. In some embodiments, an RF module can include a packaging substrate and a power amplifier (PA) assembly implemented on a PA die mounted on the packaging substrate. The RF module can further include an output matching network (OMN) device mounted on the packaging substrate and a band selection switch device mounted on the OMN device. The OMN device can be configured to provide output matching functionality for at least a portion of the PA assembly.

Abstract: The present invention provides a semiconductor device including a first glass substrate, a first integrated chip, a first anisotropic conductive film, a second glass substrate, a second integrated chip, a second anisotropic conductive film, and a packaging body.

Abstract: A printed circuit board and a method of manufacturing the same is described herein. The printed circuit board includes a first insulating layer having a first circuit embedded in a first surface thereof, a second insulating layer disposed on a second surface of the first insulating layer, the second insulating layer having a cavity therein, an electronic component mounted inside the cavity with an adhesion member, and a third insulating layer disposed on the second insulating layer to embed the electronic component.

Abstract: A fan-out semiconductor package module includes: a fan-out semiconductor package including a first interconnection member having a through-hole, a semiconductor chip disposed in the through-hole, an encapsulant encapsulating at least portions of the first interconnection member and the semiconductor chip, a second interconnection member disposed on the first interconnection member and the semiconductor chip, a third interconnection member disposed on the encapsulant, first connection terminals disposed on the second interconnection member, and second connection terminals disposed on the third interconnection member, the first to third interconnection members including, respectively, redistribution layers electrically connected to connection pads of the semiconductor chip; and a component package stacked on the fan-out semiconductor package and including a wiring substrate connected to the second interconnection member through the first connection terminals and a plurality of mounted components mounted on the

Abstract: The stack package includes a substrate body layer having a top surface and a bottom surface, first circuit patterns disposed on the bottom surface of the substrate body layer, second circuit patterns disposed on the top surface of the substrate body layer, a first semiconductor chip including first bumps, and a second semiconductor chip including second bumps. The first bumps extend through the substrate body layer to be electrically coupled to the first circuit patterns, and the second bumps extend past sidewalls of the first semiconductor chip to be electrically coupled to the second circuit patterns. The second semiconductor chip is stacked on the first semiconductor chip.

Abstract: A mounting board includes: a first electronic component that includes first solder balls, one of the first solder balls being surrounded by at least three of the first solder balls; a first capacitor that includes a first power supply terminal and a first ground terminal; a second electronic component that includes second solder balls, each of the second solder balls not being surrounded by at least three of the second solder balls; and a second capacitor that includes a second power supply terminal and a second ground terminal. A distance from the first ground terminal to the first electronic component is less than or equal to a distance from the first power supply terminal to the first electronic component. A distance from the second power supply terminal to the second electronic component is less than or equal to a distance from the second ground terminal to the second electronic component.

Abstract: A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).

Abstract: To prevent decrease of the bonding strength of an electronic component and a multilayer substrate, an electronic component-embedded module may include an electronic component having a plurality of pads and a multilayer substrate which includes a plurality of resin layers and a cavity for containing the electronic component. The multilayer substrate may include a first resin layer having a plurality of first pattern conductors and a space, and a second resin layer having a second pattern conductor and a plurality of third pattern conductors. The plurality of third pattern conductors may be in conduction with either of the first pattern conductors or the pads, with the second resin layer being placed over the first resin layer. The second pattern conductor may be arranged around a first pad with a gap, and the second resin layer is present between the second pattern conductor and at least one of the first pads.

Abstract: Integrated circuit (IC) packages with an inter-die thermal spreader are disclosed. A disclosed IC package includes a plurality of stacked dies disposed on a package substrate. A heat spreader is disposed on a top die of the plurality of stacked dies. The IC package further includes a thermal spreader layer disposed adjacent to at least one die of the plurality of stacked dies. The thermal spreader layer may extend out of a periphery of the plurality of stacked dies and may be attached to the heat spreader through a support member.