Abstract: A solid-state contactor includes a housing, a lead, a bus plate, and an end connector. The lead extends through the housing and into an interior of the housing. The bus plate is disposed within the housing interior and mounts a die which is electrically connected to the lead through the bus plate. The end connector extends between the bus plate and the lead, attaching to the bus plate at an angle for coupling a plurality of bus plates with die to the lead in a stacked arrangement.

Abstract: In the bus system, bus interface apparatuses and routers are connected together through packet exchange buses which have been established on the integrated circuit. The bus interface apparatuses are respectively connected to transmission nodes which transmit data of mutually different numbers of bits in one cycle of operation of the bus system. Each of the bus interface apparatuses generates and transmits a packet based on data received from the transmission node connected and header information including size information indicating the number of bits with respect to the transmission node connected. The router analyzes the packet, gets the size information from the header information, determines how to allocate a space in the buffer for storage by reference to the size information gotten, and stores the received packet in the buffer.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: An electronic device includes a heat dissipation member, a power element that is thermally coupled to the heat dissipation member, and a first conductive layer to which the power element is electrically coupled. The electronic device further includes a control element that controls a switching operation of the power element, a second conductive layer to which the control element is electrically coupled, and a resin layer arranged between the first conductive layer and the second conductive layer. The power element is embedded in the resin layer. The first conductive layer, the resin layer, and the second conductive layer are stacked on the heat dissipation member in this order from the ones closer to the heat dissipation member.

Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.

Abstract: A power die module using a compression connection to a power die in a small package with corona extenders positioned around short efficient path exterior electrical connections. The module is built from a baseplate with connected sidewalls forming an interior compartment holding a power substrate with attached threaded inserts. A printed circuit board bolted to the power substrate with high voltage power die compressively held between the board and the substrate. The compressive hold enhances the electrical connections between the contacts on the top and bottom of the power die and either the power substrate or the printed circuit board. Exterior blade connectors extend upward from the printed circuit board through blade apertures in a lid that covers the interior compartment. The lid includes corona extenders positioned around the blade apertures to allow for high voltage applications while maintaining a small size lightweight package.

Abstract: A power delivery network (PDN) including a battery, a set of regulators for generating supply voltages, and an integrated circuit (IC) including power rails configured to receive the supply voltages. The IC further includes an IC chip having a set of cores. The power rails includes a larger rail configured to provide a full range of currents, and the other smaller power rails each configured to provide lower range of currents. The IC includes multiplexers having first inputs coupled respectively to the smaller rails, second inputs coupled to the larger rail, and outputs coupled to the cores. When the smaller rail is able to supply the current needed by a core, the multiplexer is configured to couple the smaller rail to the core. When the smaller rail cannot supply the current needed by the core, the multiplexer is configured to couple the larger rail to the core.

Abstract: Various resistor circuits and methods of making and using the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a resistor onboard an interposer. The resistor is adapted to dampen a capacitive network. The capacitive network has at least one capacitor positioned external to the interposer.

Abstract: When a nut housing member is inserted from a first opening portion into a case (terminal housing area) in a semiconductor device, first and second protrusions of the nut housing member slide on and pass through the first and second opening portions. Ultimately, the nut housing member is housed in the case (terminal housing area), with the first protrusion being in contact with a lower end of the second opening portion and the second protrusion being in contact with a lower end of the first opening portion. Even if the nut housing member is not inserted in parallel with the terminal housing area, the forefront does not hit against a first beam. Therefore, the nut housing member is inserted stably and housed reliably in the terminal housing area of the case, and the assemblability of the nut housing member with respect to the case is improved.

Abstract: A chip package includes a substrate, a capacitive sensing layer and a computing chip. The substrate has a first surface and a second surface opposite to the first surface, and the capacitive sensing layer is disposed above the second surface and having a third surface opposite to the second surface, which the capacitive sensing layer includes a plurality of capacitive sensing electrodes and a plurality of metal wires. The capacitive sensing electrodes are on the second surface, and the metal wires are on the capacitive sensing electrodes. The computing chip is disposed above the third surface and electrically connected to the capacitive sensing electrodes.

Abstract: A device includes a redistribution layer over a molding compound layer, a first chip over the fan-out structure, wherein the first chip comprise a plurality of first through vias connected to the redistribution layer and a second chip over the first chip, the second chip being connected to the first chip through a plurality of bumps, wherein the first chip and the second chip are in the molding compound layer, and wherein a center line of the first chip is not vertically aligned with a center line of the second chip.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: Embodiments described herein relate generally to a microelectronic packaging and the manufacture thereof. A carrier may have a die attached to a top face thereof. A printed circuit board may be attached to the top face of the carrier. The printed circuit board may have a hole in which the die is disposed. A lid may be attached to the printed circuit board opposite the carrier so that the die is enclosed by the carrier, the printed circuit board, and the lid. The printed circuit board may form a seal ring around the die. Other embodiments may be described and/or claimed.

Abstract: A method and structure, the structure having a substrate, an active device in an active device semiconductor region; of the substrate, a microwave transmission line, on the substrate, electrically connected to the active device, and microwave energy absorbing “dummy” fill elements on the substrate. The method includes providing a structure having a substrate, an active device region on a surface of the structure, an ohmic contact material on the active device region, and a plurality of “dummy” fill elements on the surface to provide uniform heating of the substrate during a rapid thermal anneal process, the ohmic contact material and the “dummy” fill elements having the same radiant energy reflectivity. The rapid thermal anneal processing forms an ohmic contact between an ohmic contact material and the active device region and simultaneously converts the “dummy” fill elements into microwave lossy “dummy” fill elements.

Abstract: In various embodiments, apparatuses and methods are disclosed that may be able to implement a multi-layer, three dimensional routing between a decoupling component and an input port for a SoC or MCM. A three dimensional (3D) structure may provide a defined current return path from the decoupling component to the input port. The current return path may be constrained by design to provide an equal and opposite electromagnetic flux to the input port thereby reducing series inductance between the input port and the decoupling component.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: An electrical connection module system includes a first connection plate with a first connection end and at least one first foot section, a first screw nut, and a dielectric holder. The dielectric holder has a first reception region for receiving the first screw nut. The first connection plate can, when the first screw nut is placed in the first reception region, be pushed onto the dielectric holder and be brought into a first target position such that the first screw nut is arranged between the dielectric holder and the first connection end and is held by the first connection end in the first reception region in such a way that the first screw nut cannot fall out.

Abstract: A method for manufacturing a thin film chip resistor device includes the steps of: disposing a magnetic fixing member on a first surface of a substrate, and disposing a magnetic shadow mask on a second surface of the substrate opposite to the first surface, such that the magnetic shadow mask detachably and fixedly contacts the second surface of the substrate by virtue of an attractive magnetic force between the magnetic fixing member and the magnetic shadow mask; and depositing at least one resistor unit on the second surface of the substrate with the use of the magnetic shadow mask, the resistor unit including two separated first electrode elements and a resistor element that electrically interconnects the first electrode elements.

Abstract: A semiconductor device may include a first terminal electrically connected to a first semiconductor chip, a second terminal electrically connected to a second semiconductor chip, which is different from the first semiconductor chip, a first signal line electrically connecting the first terminal and the second terminal and including a first node, a third terminal connected to a tester monitoring a signal transmitted between the first semiconductor chip and the second semiconductor chip, a fourth terminal applied a reference voltage, a second signal line electrically connecting the third terminal and the fourth terminal and including a second node, a first resistor connected between the first node and the second node and a second resistor directly connected to the second node different from the first resistor.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: This seal ring (1) is made of a clad material in which a base material layer (10) and a brazing filler metal layer (11) arranged on a first surface (10b) of the base material layer are bonded to each other, and a side brazing filler metal portion (11f) of the brazing filler metal layer covering a side surface (10c) of the base material layer is removed.

Abstract: Disclosed are chip packaging structures for high speed chip to chip and chip to carrier communications and methods of making such structures. The chip packaging structures do not require an interposer containing through silicon vias and/or provide structures having reduced warping.

Abstract: Some embodiments of the present disclosure describe an integrated circuit (IC) package assembly having first, second, and third insulated wires wire bonded with die pads on an IC die, with an outer surface of the second insulated wire located at a distance of less than an outer cross-sectional diameter of the second insulated wire from an outer surface of the first insulated wire at a first location and located at a distance of less than the outer cross-sectional diameter from an outer surface of the third insulated wire at a second location. Other embodiments may be described and/or claimed.

Abstract: Printed circuit includes a planar substrate having opposite sides and a thickness extending therebetween. The sides extend parallel to a lateral plane. The printed circuit also includes a plurality of conductive vias extending through the planar substrate in a direction that is perpendicular to the lateral plane. The conductive vias include ground vias and signal vias. The signal vias form a plurality of quad groups in which each quad group includes a two-by-two array of the signal vias. Optionally, the printed circuit also includes signal traces that electrically couple to the signal vias. The signal traces may form a plurality of quad lines in which each quad line includes four of the signal traces. The four signal traces of each quad line may extend parallel to one another and be in a two-by-two formation.

Abstract: Generally discussed herein are systems and apparatuses that can include a flexible substrate with a hermetic seal formed thereon. The disclosure also includes techniques of making and using the systems and apparatuses. According to an example a technique of making a hermetic seal on a flexible substrate can include (1) forming an interconnect on a flexible substrate, (2) situating a device on the substrate near the interconnect, or (3) selectively depositing a first hermetic material on the device or interconnect so as to hermetically seal the device within the combination of the interconnect and first hermetic material.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: A structure for delivering power is described. In some embodiments, the structure can include conductors disposed on two or more layers. Specifically, the structure can include a first set of interdigitated conductors disposed on a first layer and oriented substantially along an expected direction of current flow. At least one conductor in the first set of interdigitated conductors may be maintained at a first voltage, and at least one conductor in the first set of interdigitated conductors may be maintained at a second voltage, wherein the second voltage is different from the first voltage. The structure may further include a conducting structure disposed on a second layer, wherein the second layer is different from the first layer, and wherein at least one conductor in the conducting structure is maintained at the first voltage.

Abstract: A method of forming a temporary test structure for device fabrication is provided. The method allows for electrically testing conductive interconnects during controlled collapse chip connections (C4) fabrication and/or through-silicon vias (TSVs) during interposer fabrication. The method includes providing a substrate containing a plurality of electrically conductive interconnects extending vertically to top surface of the substrate. A temporary test structure is formed to connect the plurality of interconnects for electrical testing. Electrical testing is performed on the substrate by probing at different test locations on the temporary test structure. All or part of the temporary test structure is removed so as not to affect product performance. The temporary test structure can contain electrical test pads which provide a way to make temporary connections to small interconnect landings or features at extreme tight pitch to fan them out to testable pads sizes and pitches.

Abstract: The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. The thermally enhanced mold compound component includes a lower portion filling a lower region of the cavity and residing over the upper surface of the thinned flip chip die, and an upper portion filling an upper region of the cavity and residing over the lower portion. A first average thermal conductivity of the lower portion is at least 1.2 times greater than a second average thermal conductivity of the upper portion.

Abstract: An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth transistors, a tie bar, a low voltage IC, a high voltage IC, a first, second and third boost diodes, a plurality of leads and a molding encapsulation. The first transistor is attached to the first die paddle. The second transistor is attached to the second die paddle. The third transistor is attached to the third die paddle. The fourth, fifth and sixth transistor s are attached to the fourth die paddle. The low and high voltage ICs are attached to the tie bar. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth transistors, the tie bar, the low and high voltage ICs, and the first, second and third boost diodes. The IPM has a reduced top surface area and a reduced number of leads compared to a conventional IPM.

Abstract: An interconnect (124) suitable for attachment of integrated circuit assemblies to each other comprises a polymer member (130) which is conductive and/or is coated with a conductive material (144). Such interconnects replace metal bond wires in some embodiments. Other features are also provided.

Abstract: An integrated circuit including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, with a solder ball formed on the self-aligned under bump metal pad. Processes of forming integrated circuits including a self-aligned under bump metal pad formed on a top metal interconnect level in a connection opening in a dielectric layer, by a process of forming one or more metal layers on the interconnect level and the dielectric layer, selectively removing the metal from over the dielectric layer, and subsequently forming a solder ball on the self-aligned under bump metal pad. Some examples include additional metal layers formed after the selective removal process, and may include an additional selective removal process on the additional metal layers.

Abstract: A fabricating process for a spacer connector is disclosed. A core substrate with a plurality of through holes is prepared. A conductive carrier with a dielectric adhesive configured on a top surface is prepared. The core substrate is then pasted on a top surface of the dielectric adhesive layer. The dielectric adhesive exposed in the through hole is then etched. An electric plating process to form metal pillar in the core substrate is performed using the conductive carrier as one of the electrode.

Abstract: Carrier module (1) for at least one semiconductor element (3) having a passively and/or actively cooled carrier (4) which has a positive carrier contact (5) and a negative carrier contact (6), with a device (2) for bridging the at least one semiconductor element (3) arranged on the carrier (4), comprising at least one first printed circuit board (7) with at least one bridging element (8), wherein at least one positive contact (9) which is electrically conductively connected to the positive carrier contact (5) and at least one negative contact (11) which is electrically conductively connected to the negative carrier contact (6) are provided on a first printed circuit board (7) and the bridging element (8) is electrically conductively connected to the positive contact (9) and to the negative contact (11) of the first printed circuit board (7), wherein the first printed circuit board (7) is thermally conductively and releasably connected to the carrier (4).

Abstract: An integrated circuit package includes a packaging substrate, which has an electrically conductive grid formed on a dielectric layer, and an integrated circuit die electrically coupled to the electrically conductive grid at one or more locations. In this embodiment, the electrically conductive grid includes a plurality of electrically conductive portions, wherein each portion is electrically coupled to at least one other portion, and a plurality of void regions that are electrically non-contiguous and substantially free of electrically conductive material. One advantage of the integrated circuit package is that a packaging substrate that is reduced in thickness, and therefore rigidity, can still maintain planarity during operation.

Abstract: Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.

Abstract: Some embodiments described herein include apparatuses and methods of forming such apparatuses. One such embodiment may include a routing arrangement having pads to be coupled to a semiconductor die, with a first trace coupled to a first pad among the pads, and a second trace coupled to a second pad among the pads. The first and second traces may have different thicknesses. Other embodiments including additional apparatuses and methods are described.

Abstract: A semiconductor package includes a package substrate including a first region, a thermal block penetrating the first region and exposed at top and bottom surfaces of the package substrate, a semiconductor chip on the package substrate, bumps disposed between the package substrate and the semiconductor chip and including first bumps being in contact with the thermal block, and terminals disposed on the bottom surface of the package substrate and including first terminals being in contact with the thermal block. The thermal block is one of a power path and a ground path.

Abstract: A circuit for setting a reference voltage is provided. The circuit includes a reference voltage information storage unit and a reference voltage input/output (I/O) control unit. The reference voltage information storage unit is configured to set a level of a reference voltage according to information stored in a first register or a second register if a training operation starts in a first set mode. The reference voltage I/O control unit is configured to set a level of the reference voltage according to first data or second data if the training operation starts in a second set mode.

Abstract: A semiconductor device includes an insulating substrate including an insulating plate and a circuit plate disposed on a main surface of the insulating plate; a semiconductor chip having a front surface provided with an electrode and a rear surface fixed to the circuit plate; a printed circuit board facing the insulating substrate and including a metal layer; a conductive post having one end electrically and mechanically connected to the electrode and another end electrically and mechanically connected to the metal layer; a passive element fixed to the printed circuit board; and a plurality of positioning posts fixed to the printed circuit board to position the passive element.

Abstract: An integrated power package includes a substrate having a first surface and an integrated circuit located within the substrate. At least one electrical conductor is located between the first surface and another point on the substrate. At least one transistor is electrically and mechanically coupled to the at least one first conductor. A support structure is electrically and mechanically coupled to the at least one transistor, wherein the at least one transistor is located between the first surface of the substrate and the support structure.

Abstract: Systems and methods are provided for an integrated circuit package. A plurality of electrical contacts are configured to provide a structure for electrically connecting the integrated circuit package to a printed circuit board. A package substrate includes at least one patterned metallic layer formed to electrically interconnect I/O contacts of an integrated circuit to the plurality of electrical contacts, and at least one generally uniform metallic layer having a plurality of voids that are respectively situated in axial alignment with corresponding ones of the electrical contacts, and one or more dielectric layers disposed between the plurality of electrical contacts and the metallic layers.

Abstract: In a microelectronic device, a substrate has first upper and lower surfaces. An integrated circuit die has second upper and lower surfaces. Interconnects couple the first upper surface of the substrate to the second lower surface of the integrated circuit die for electrical communication therebetween. A via array has proximal ends of wires thereof coupled to the second upper surface for conduction of heat away from the integrated circuit die. A molding material is disposed in the via array with distal ends of the wires of the via array extending at least to a superior surface of the molding material.

Abstract: A method of forming a temporary test structure for device fabrication is provided. The method is particularly useful for electrically testing conductive interconnects during controlled collapse chip connections (C4) fabrication and/or through-silicon vias (TSVs) during interposer fabrication. The method includes providing a substrate containing a plurality of electrically conductive interconnects extending vertically to top surface of the substrate. A temporary test structure is formed to connect the plurality of interconnects and for electrical testing. The suitable material for the temporary test structure is TiW for a single layer structure, or Cu or Cu alloy over Ti or TiW for a bilayer structure with thickness in a range of about 20 nm to 1200 nm. Excimer laser ablation can be used to form the temporary test structure. Electrical testing is performed on the substrate by probing at different test locations on the temporary test structure.

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

Abstract: Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A two-stage tuning procedure is described. The transistor may comprise gallium nitride and may be configured as a power transistor capable of handling up to 1000 W of power. A tuned transistor may operate at frequencies up to 6 GHz with a peak drain efficiency greater than 60%.

Abstract: An electronic module includes a circuit board, having a carrier layer, the carrier layer having a plurality of recess areas in a main surface thereof, and a plurality of electronic sub-modules, each one of the sub-modules being disposed in one of the recess areas and each one of the sub-modules having a carrier, a semiconductor chip disposed on the carrier, and an encapsulation material disposed on the carrier and on the semiconductor chip.

Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.

Abstract: A power module packaging structure includes a first conducting layer, a first insulating layer, a second conducting layer, a first power device, and a first controlling device. The first insulating layer is disposed above the first conducting layer. The second conducting layer is disposed above the first insulating layer. The first power device is disposed on the first conducting layer. The first controlling device is disposed on the second conducting layer and used for controlling the first power device. The first conducting layer, the second conducting layer, the first power device, and the first controlling device form a loop. A direction of a current which flows through the first conducting layer in the loop is opposite to a direction of a current which flows through the second conducting layer in the loop.

Abstract: A package board is provided. The package board includes a board body having a front surface and a back surface. A first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad are disposed on the front surface of the board body, and a second power pad, a second ground pad and a second signal pad are disposed on the back surface of the board body. The second power pad, the second ground pad and the second signal pad are electrically connected to the first power pad, the first ground pad and the first signal pad, respectively. An internal terminal interconnection is provided in a bulk region of the board body or on a surface of the board body. The internal terminal interconnection electrically connects the first internal terminal pad to the second internal terminal pad. A semiconductor package employing the package board is also provided.