Abstract: A packaged radio-frequency device is disclosed, including a packaging substrate configured to receive one or more components, the packaging substrate including a first side and a second side. A shielded package may be implemented on the first side of the packaging substrate, the shielded package including a first circuit and a first overmold structure, the shielded package configured to provide radio-frequency shielding for at least a portion of the first circuit. A set of through-mold connections may be implemented on the second side of the packaging substrate, the set of through-mold connections defining a mounting volume on the second side of the packaging substrate. The device may include a component implemented within the mounting volume and a second overmold structure substantially encapsulating one or more of the component or the set of through-mold connections.

Abstract: An electronic package, a semiconductor package structure and a method for manufacturing the same are provided. The electronic package includes a carrier, a first electronic component, an electrical extension structure, and an encapsulant. The carrier has a first face and a second face opposite to the first face. The first electronic component is adjacent to the first face of the carrier. The electrical extension structure is adjacent to the first face of the carrier and defines a space with the carrier for accommodating the first electronic component, the electrical extension structure is configured to connect the carrier with an external electronic component. The encapsulant encapsulates the first electronic component and at least a portion of the electrical extension structure.

Abstract: A method of forming semiconductor structure includes attaching backsides of top dies to a front side of a bottom wafer, the bottom wafer comprising a plurality of bottom dies; forming first conductive pillars on the front side of the bottom wafer adjacent to the top dies; forming a first dielectric material on the front side of the bottom wafer around the top dies and around the first conductive pillars; and dicing the bottom wafer to form a plurality of structures, each of the plurality of structures comprising at least one of the top dies and at least one of the bottom dies.

Abstract: A semiconductor module includes a module substrate, a semiconductor package mounted on the module substrate, a first bonding wire connecting the module substrate to the semiconductor package, and a first molding member covering the first bonding wire. The semiconductor package includes a package substrate, a semiconductor chip mounted on the package substrate, a second bonding wire connecting the package substrate to the semiconductor chip, and a second molding member covering the semiconductor chip and the second bonding wire. The first and second bonding wires are each connected to one connection pad of the package substrate.

Abstract: An array of complementary die sets is attached to a carrier substrate. A continuous complementary-level molding compound layer is formed around the array of complementary die sets. An array of primary semiconductor dies is attached to the array of complementary die sets. A continuous primary-level molding compound layer is formed around the array of primary semiconductor dies. The bonded assembly is diced by cutting along directions that are parallel to edges of the primary semiconductor dies. The sidewalls of the complementary dies are azimuthally tilted relative to sidewalls of the primary semiconductor dies, or major crystallographic directions of a single crystalline material in the carrier substrate are azimuthally tilted relative to sidewalls of the primary semiconductor dies.

Abstract: Disclosed aspects include a semiconductor die including a substrate having a semiconductor surface including circuitry. A top metal layer is above the semiconductor surface including top metal lines that are electrically connected through a metal stack including metal interconnects that electrically connect to the circuitry. The top metal lines are configured in a primary orientation that collectively represents at least 50% of a total length of the top metal lines in a first direction. The top metal layer includes bond pads exposed from a passivation layer. The metal features are positioned lateral to and not directly electrically connected to the top metal layer and/or are positioned on the passivation layer. At least a majority of a total area of the metal features is not over metal interconnects. The metal features have a length direction oriented in a second direction that is at least essentially perpendicular relative to the primary orientation.

Abstract: A semiconductor device includes an insulating layer, conductors, a semiconductor element and a sealing resin. The insulating layer has first and second surfaces opposite to each other in the thickness direction. Each conductor has an embedded part whose portion is embedded in the insulating layer and a redistribution part disposed at the second surface and connected to the embedded part. The semiconductor element has electrodes provided near the first surface and connected the embedded parts of the conductors. The semiconductor element is in contact with the first surface. The sealing resin partially covers the semiconductor element and is in contact with the first surface. The redistribution parts include portions outside the semiconductor element as viewed in the thickness direction. The insulating layer has grooves recessed from the second surface in the thickness direction. The redistribution parts are in contact with the grooves.

Abstract: A semiconductor package includes a core substrate having a through hole, a first molding member at least partially filling the through hole and covering an upper surface of the core substrate, the first molding member having a cavity within the through hole, a first semiconductor chip on the first molding member on the upper surface of the core substrate, a second semiconductor chip arranged within the cavity, a second molding member on the first molding member and covering the first semiconductor chip, a third molding member filling the cavity and covering the lower surface of the core substrate; first redistribution wirings on the second molding member and electrically connecting first chip pads of the first semiconductor chip and core connection wirings of the core substrate; and second redistribution wirings on the third molding member and electrically connecting second chip pads of the second semiconductor chip and the core connection wirings.

Abstract: A device comprising a first substrate comprising a first plurality of pillar interconnects; a second substrate comprising a second plurality of pillar interconnects, wherein the second plurality of pillar interconnects is coupled to the first plurality of pillar interconnects through a plurality of solder interconnects; a passive component located between the first substrate and the second substrate; and an integrated device coupled to the first substrate.

Abstract: An electronic module includes a first semiconductor device disposed on a first main surface of an insulating board of a printed wiring board, a first capacitor disposed on a second main surface of the insulating board at a position that overlaps with the first semiconductor device when viewed in a direction perpendicular to the first main surface, and a second capacitor disposed on the second main surface of the insulating board at a position that overlaps with the first semiconductor device when viewed in the direction perpendicular to the first main surface. A second electrode of the first capacitor is electrically connected to a ground pattern via a first ground via of the printed wiring board. A fourth electrode of the second capacitor is electrically connected to the ground pattern via a second ground via of the printed wiring board.

Abstract: Package-on-package systems for packaging semiconductor devices. In one embodiment, a package-on-package system comprises a first semiconductor package device and a second semiconductor package device. The first package device includes a base substrate including a first side having a die-attach region and a peripheral region, a first semiconductor die attached to the base substrate at the die-attach region, wherein the first semiconductor die has a front side facing the first side of the base substrate and a backside spaced apart from the first side of the base substrate by a first distance, and a high density interconnect array in the perimeter region of the base substrate outside of the die-attach region. The interconnect array has a plurality of interconnects that extend from the first side of the base substrate by a second distance greater than the first distance. The second semiconductor device package is electrically coupled corresponding individual interconnects.

Abstract: A semiconductor chip including a semiconductor substrate having a first surface and a second surface and having an active layer in a region adjacent to the first surface, a first through electrode penetrating at least a portion of the semiconductor substrate and connected to the active layer, a second through electrode located at a greater radial location from the center of the semiconductor substrate than the first through electrode, penetrating at least a portion of the semiconductor substrate, and connected to the active layer. The semiconductor chip also including a first chip connection pad having a first height and a first width, located on the second surface of the semiconductor substrate, and connected to the first through electrode, and a second chip connection pad having a second height greater than the first height and a second width greater than the first width, located on the second surface of the semiconductor substrate, and connected to the second through electrode.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate including a dielectric material having a first surface and an opposing second surface, a first photodefinable material on at least a portion of the second surface, and a second photodefinable material on at least a portion of the first photodefinable material, wherein the second photodefinable material has a different material composition than the first photodefinable material.

Abstract: The present application discloses a semiconductor device with an interface structure and a method for fabricating the interface structure. The interface structure includes an interface board configured to be fixed onto and electrically coupled to a chuck of a testing equipment, and a first object positioned on a first surface of the interface board and electrically coupled to the interface board. The first object is configured to be analyzed by the testing equipment.

Abstract: In one example, a semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of the redistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosed herein.

Abstract: A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.

Abstract: A semiconductor package includes: a first substrate; a semiconductor chip mounted on the first substrate such that a circuit formation surface is oriented toward the first substrate; a second substrate arranged above the first substrate, the semiconductor chip being sandwiched between the first substrate and the second substrate; and a resin that seals the semiconductor chip and that is filled between the first substrate and the second substrate, wherein the second substrate includes a solder resist layer having a first surface facing a back surface that is an opposite surface of the circuit formation surface of the semiconductor chip, and wherein on an area of the first surface of the solder resist layer facing the back surface of the semiconductor chip, at least one protruding portion that protrudes towards the back surface of the semiconductor chip is provided.

Abstract: Provided is a die extraction method, comprising the following steps: removing solder balls; polishing a front side of the sample to remove a part on a front side of the target die, and retain a part of a die attach film (DAF) layer on the front side of the target die and a bonding wire located in the part; attaching the front side of the sample to the polishing jig and flattening the sample and the polishing jig by the flattener; polishing the back side of the sample to remove a part on a back side of the target die, and retain a DAF layer on the back side of the target die; removing the DAF and a packaging material remaining on the sample to obtain the target die; and attaching the back side of the target die to a glass slide, thus completing extraction of the target die.

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

Abstract: A stacked semiconductor package has a substrate, a first chip, at least one spacer, a second chip and an encapsulation. The first chip and the second chip are intersecting stacked on the substrate. The at least one spacer is stacked on the substrate to support the second chip. The encapsulation is formed to encapsulate the substrate, the first chip, the at least one spacer and the second chip. The at least one spacer is made of the material of the encapsulation. Therefore, the adhesion between the at least one spacer and the encapsulation is enhanced to avoid the delamination during the reliability test and enhances the reliability of the stacked semiconductor package.

Abstract: A semiconductor package comprising plurality of bumps and fabricating method thereof. The package has a chip, a plurality of first and second bumps, an encapsulation, a redistribution. The chip has a plurality of pads and an active area and the active surface has a first area and a second area surrounding the first, the pads formed on a first area of the active surface, each first bump formed on the corresponding pad. The second bumps are formed on the second area, each second bump has first and second different width layers. The encapsulation encapsulates the chip and bumps and is ground to expose the bumps therefrom. During grinding, all of the first bumps are completely exposed by determining a width of an exposed surface of the second bump to electrically connect to the redistribution is increased. Therefore, a shallow-grinding or over-grinding does not occur.

Abstract: A multi-stacked package-on-package structure includes a method. The method includes: adhering a first die and a plurality of second dies to a substrate, the first die having a different function from each of the plurality of second dies; attaching a passive device over the first die; encapsulating the first die, the plurality of second dies, and the passive device; and forming a first redistribution structure over the passive device, the first die, and the plurality of second dies, the passive device connecting the first die to the first redistribution structure.

Abstract: A wiring substrate includes a substrate body composed of a plurality of ceramic layers (insulating materials) and having a front surface and a back surface located on opposite sides thereof and having a side surface located between the front surface and the back surface. The outline of the substrate body in a plan view which is a view from the front surface side is composed of a plurality of curved portions separated from one another and a plurality of straight portions each located between adjacent ones of the curved portions. The total length of the curved portions in the plan view is at least 40% of the sum of the total length of the curved portions and the total length of the straight portions.

Abstract: A substrate structure and a semiconductor package structure are provided. The substrate structure includes a first dielectric layer, a pad and a conductive structure. The first dielectric layer has a first surface and a second surface opposite to the first surface. The pad is adjacent to the first surface and at least partially embedded in the first dielectric layer. The first dielectric layer has an opening exposing the pad, and a width of the opening is less than a width of the pad. The conductive structure is disposed on the pad and composed of a first portion outside the opening of the first dielectric layer and a second portion embedded in the opening of the first dielectric layer. The first portion has an aspect ratio exceeding 1.375.

Abstract: A system and method. The system may include an integrated circuit (IC) die. The IC die may have two faces and sides. The system may further include mold material. The mold material may surround at least the sides of the IC die. The IC die may be mechanically interlocked with the mold material.

Abstract: A power semiconductor module includes: at least one semiconductor substrate having a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer; at least one semiconductor body arranged on the first metallization layer; at least one end stop element arranged either on the semiconductor substrate or on one of the at least one semiconductor body and extending from the semiconductor substrate or the respective semiconductor body in a vertical direction that is perpendicular to a top surface of the semiconductor substrate; and a housing at least partly enclosing the semiconductor substrate, the housing including sidewalls and a cover. The housing further includes at least one press-on pin extending from the cover of the housing towards one of the at least one end stop element, and exerting a pressure on the respective end stop element.

Abstract: A semiconductor device has a substrate with first and second conductive layers formed over first and second opposing surfaces of the substrate. A plurality of bumps is formed over the substrate. A semiconductor die is mounted to the substrate between the bumps. An encapsulant is deposited over the substrate and semiconductor die. A portion of the bumps extends out from the encapsulant. A portion of the encapsulant is removed to expose the substrate. An interconnect structure is formed over the encapsulant and semiconductor die and electrically coupled to the bumps. A portion of the substrate can be removed to expose the first or second conductive layer. A portion of the substrate can be removed to expose the bumps. The substrate can be removed and a protection layer formed over the encapsulant and semiconductor die. A semiconductor package is disposed over the substrate and electrically connected to the substrate.

Abstract: A hybrid bonding structure includes a first conductive structure and a second conductive structure. The first conductive structure includes a first conductive layer. A first barrier surrounds the first conductive layer. A first air gap surrounds and contacts the first barrier. A first dielectric layer surrounds and contacts the first air gap. The second conductive structure includes a second conductive layer. A second barrier contacts the second conductive layer. A second dielectric layer surrounds the second barrier. The second conductive layer bonds to the first conductive layer. The first dielectric layer bonds to the second dielectric layer.

Abstract: An electrical connection wire connects an electrical connection pad of an electrical chip and an electrical connection pad of a carrier substrate to which the electronic chip is mounted. A dielectric layer surrounds at least the bonding wire. The dielectric layer may be a dielectric sheath or a hardened liquid dielectric material. A dielectric material may also cover at least a portion of the electrical chip and carrier substrate. A liquid electrically conductive material is deposited and hardened to form a local conductive shield surrounding the dielectric layer at the bonding wire.

Abstract: A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.

Abstract: A semiconductor device including a semiconductor substrate including an electrode; a wire connected to the electrode; a first insulating film including a first opening that partially exposes the wire; a base portion that is connected to a portion of the wire exposed via the first opening, and that includes a conductor including a recess corresponding to the first opening; and a solder film on a surface of the base portion. Solder included in the solder film is fused by a first heat treatment, and the recess is filled with the fused solder.

Abstract: A flexible three-dimensional electronic device includes a polymer layer having a first side and a second side that is opposite of the first side. A first flexible substrate carrying a first electronic component is arranged on the first side of the polymer layer. A second flexible substrate carries a second electronic component. The second flexible substrate is a flexible silicon substrate arranged on the second side of the polymer layer. An electrically conductive via passes through the polymer layer to electrically connect the first and second electronic components.

Abstract: An electronic chip, system, and method includes a power block including a power source configured to provide power to components of the electronic chip and a relay circuit coupled to the power source and a ground plane. The electronic chip further includes chip package having a first major side and a second major side, the power block secured to the second major side, the chip package comprising electrical connections, disposed on the second major side, to be secured with respect to a circuit board, and interconnect circuitry, electrically coupling the power block to ground, comprising a plurality of conductive layers, a conductive through hole, electrically connecting a first pair of the plurality of conductive layers, having a first width, and a via, electrically connecting a second pair of the plurality of conductive layers, having a second width less than the first width.

Abstract: An electronic package and a method for manufacturing the electronic package are provided. The method includes forming a slope surface on at least one side surface of at least one of a plurality of electronic components, and then disposing the plurality of electronic components on a carrier structure, such that the two adjacent electronic components form a space by the slope surface. Afterwards, an encapsulation layer is formed on the carrier structure and filled into the space to cover the two adjacent electronic components so as to disperse stress on the electronic components through the design of the space to prevent cracking due to stress concentration.

Abstract: The present disclosure provides a method of measuring a plurality of voids in an underfill material of an underfill package. The method includes operations of obtaining a welding angle profile of the underfill package; obtaining a simulated void profile of the underfill package according to the welding angle profile; determining a plurality of high-risk void regions according to the simulated void profile; simulating, according to a selected pressure and a selected temperature of the underfill material, a first high-risk void region of the plurality of high-risk void regions to generate an updated void profile; and determining whether the updated void profile meets a void requirement of the underfill package.

Abstract: A glass circuit board includes, on a glass substrate, a stress relief layer, a seed layer, and an electroplated layer including copper plating. The stress relief layer is an insulator formed by dry coating method and applies a compressive residual stress to the glass substrate at room temperature. The stress relief layer thus reduces cracking, fracturing or warpage of the glass substrate caused by thermal expansion and shrinkage of the copper plating due to heating and cooling of the glass circuit board during manufacturing or thermal cycling, ensuring high connection reliability of the glass circuit board.

Abstract: An electronic device includes a substrate and a flexible printed circuit board. The substrate includes a plurality of first pins disposed on the substrate. The flexible printed circuit board includes a plurality of second pins disposed on the flexible printed circuit board. The first pins and the second pins are bonded to each other to form a plurality of bonding points. The bonding points include at least one central bonding point and at least one first bonding point. The at least one central bonding point is located in a central area of the electronic device. The at least one first bonding point is located in a first area of the electronic device. The first area is located outside the central area. A line width of the at least one first bonding point is greater than a line width of the at least one central bonding point.

Abstract: A high surface area to mass catalyst is formed by a method that includes a Kirigami mapped cutting of a flat three metal laminate composite formed on a deposition support. Kirigami derived catalyst has a shape that provides a high surface to mass ratio and promotes the flow of a fluid containing a reagent for a reaction catalyzed by the exterior metal catalyst films of the three metal laminate composite. Structural integrity of the Kirigami derived catalyst results from a support metal film residing between two metal catalyst films. The shaping to the Kirigami derived structure involves cutting the flat three metal laminate composite to that of a Kirigami map, imposing stress on the cut structure to force a non-planar deformation, and delaminating the Kirigami derived catalyst from the deposition support.

Abstract: One embodiment includes partially forming a first through via in a substrate of an interposer, the first through via extending into a first side of the substrate of the interposer. The method also includes bonding a first die to the first side of the substrate of the interposer. The method also includes recessing a second side of the substrate of the interposer to expose the first through via, the first through via protruding from the second side of the substrate of the interposer, where after the recessing, the substrate of the interposer is less than 50 ?m thick. The method also includes and forming a first set of conductive bumps on the second side of the substrate of the interposer, at least one of the first set of conductive bumps being electrically coupled to the exposed first through via.

Abstract: A package structure includes a first semiconductor die, a second semiconductor die, a redistribution circuit structure, and a semiconductor device. The redistribution circuit structure has a first surface and a second surface opposite to the first surface, where the first surface is in contact with the first semiconductor die and the second semiconductor die, and the redistribution circuit structure is disposed on and electrically connected to the first semiconductor die and the second semiconductor die. The redistribution circuit structure includes a recess extending from the second surface toward the first surface. The semiconductor device is located in the recess and electrically connected to the first semiconductor die and the second semiconductor die through the redistribution circuit structure.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.

Abstract: A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

Abstract: A semiconductor device package comprises a first substrate, a first electronic component, an encapsulant, and a feeding structure. The first substrate has a first surface and a second surface opposite the first surface. The first electronic component is disposed on the first surface of the first substrate. The encapsulant encapsulates the first electronic component on the first surface of the first substrate. The feeding structure is disposed on the second surface of the first substrate without covering.

Abstract: A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming a dielectric layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, bonding a device die to the dielectric layer and a first portion of the plurality of bond pads through hybrid bonding, and bonding a die stack to through-silicon vias in the device die.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory. Here, the insulating film is formed by performing a first heat treatment to the organic material. Also, after a second heat treatment is performed to the semiconductor wafer, and the non-volatile memory to which the data is written is checked, a barrier layer and a first solder material are formed on the surface of the bonding pad located in a first region by using an electroplating method. Further, a bump electrode is formed in the first region by performing a third heat treatment to the first solder material.

Abstract: A package substrate includes a first insulating layer, a first redistribution wiring buried in the first insulating layer, a first bonding pad including a lower surface disposed on an upper surface of the first insulating layer, and a first bonding surface, and a second, elevated, bonding pad disposed on the upper surface of the first insulating layer. The second bonding pad includes a metal layer disposed on the upper surface of the first insulating layer, and a second bonding pad layer having a lower surface connected to the metal layer and a second bonding surface. The metal layer is disposed between the upper surface of the first insulating layer and the lower surface of the second bonding pad layer. The second bonding surface of the second bonding pad layer is higher than the first bonding surface of the first bonding pad.

Abstract: This disclosure provides a multi-layered printed circuit board (PC) that has signal array region. The signal array region has a width and circumscribes a power core region and has signal vias connected to respective signal ball pads, and ground vias connected to respective ground ball pads within the signal array region that have an associated ball pad pitch. The PCB also has an inner current power layer. The signal and ground vias are arranged on the component layer in a pattern and extend into the inner current layer. The pattern forms current power paths across the width of the signal array region, such that the current power paths have a width that is at least about 50% as wide as the ball pad pitch.

Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.

Abstract: A package structure and a method for fabricating the same are provided. An electronic component such as a sensing chip and a conductive element such as a bonding wire are mounted to a carrier, encapsulated by an encapsulant, and electrically connected through a conductive layer. As such, the electronic component can further be electrically connected to the carrier through the conductive layer and the conductive element. Therefore, the sensing chip can be packaged through current packaging processes, thereby reducing the fabrication cost, shortening the fabrication time and improving the product yield.