Abstract: This drive chip has a configuration that is provided with: a base main body; two terminal groups that are respectively disposed along the base main body sides in the longitudinal direction of the base main body, said sides facing each other; a narrow-pitch section in one terminal group wherein terminals are disposed in a zigzag manner in two or more rows, said narrow-pitch section having a narrow terminal pitch in the longitudinal direction; a rough pitch section in the one terminal group, said rough pitch section having a terminal pitch in the longitudinal direction wider than that of the narrow pitch section; and a dummy bump that is disposed between the two terminal groups, said dummy bump being disposed parallel to the rough pitch section.

Abstract: A method of manufacturing a lead frame includes providing an electrically conductive layer having a plurality of holes at a top surface. The plurality of holes form a structure of leads and a die pad on the electrically conductive layer. The plurality of holes are filled with a non-conductive material. Next; an electrically conductive foil is attached on the top surface of the electrically conductive layer and the non-conductive epoxy material. Then, the electrically conductive foil is etched to create a network of leads, die pad, bus lines, dam bars and tie lines, wherein the bus lines connect the leads to the dam bar, the dam bar is connected to the tie line and the tie line is connected to the die pad.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Abstract: A semiconductor die including first, second, and third bond pads. The first and second bond pads are arranged in an outer periphery of the semiconductor die. The first bond pad receives a reference voltage potential through a first lead wire. A first via arranged in a substrate of the semiconductor die is connected between the first bond pad and an interconnecting layer. A second via arranged in the substrate is connected between the interconnecting layer and the second bond pad to provide the reference voltage potential to the second bond pad. The third bond pad is arranged in an interior portion of the semiconductor die and is connected to the second bond pad using a second lead wire to receive the reference voltage potential. A circuit is arranged in the interior portion between the second bond pad and the third bond pad below the second lead wire.

Abstract: A method of testing a semiconductor die having an array of contacts, where at least two I/O pads in adjacent positions have the same data signal during testing operations with a test probe. The adjacent I/O pads form a test cluster allowing the use of a larger test probe tip and/or greater tolerance on test probe tip alignment during testing operations.

Abstract: A chip arrangement may include: a chip including a plurality of electrical nets, wherein each electrical net includes at least one bonding pad; and a plurality of pillars formed on the at least one bonding pad of a majority of the plurality of electrical nets, wherein the plurality of pillars may be configured to connect the at least one bonding pad of the majority of the plurality of electrical nets to a chip-external connection region.

Abstract: An insulation layer is formed on a substrate. A first mask is formed on the insulation layer. The first mask includes a plurality of line patterns arranged in a second direction. The plurality of line patterns extend in a first direction substantially perpendicular to the second direction. A second mask is formed on the insulation layer and the first mask. The second mask includes an opening partially exposing the plurality of line patterns. The opening has an uneven boundary at one of a first end portion in the first direction and a second end portion in a third direction substantially opposite to the first direction. The insulation layer is partially removed using the first mask and the second mask as an etching mask, thereby forming a plurality of first trenches and second trenches. The plurality of first trenches and the second trenches are arranged in a staggered pattern.

Abstract: Disclosed is a flexible printed circuit film (FPC film) and display device using the same, the FPC film comprising a body extending along a side of a substrate; and a connector protruding from the body and detachably combined with a PCB wherein the connector comprises: a flexible polymer film including pad region and line region, wherein a plurality of first via holes are formed in the pad region; a plurality of pads overlapped with the first via hole in the pad region on one surface of the flexible polymer film; and a plurality of lines electrically connected with the plurality of pads through the first via hole, wherein the plurality of pads are formed of pad sets of plural rows including a pad set of a first row and a pad set of a second row.

Abstract: A semiconductor package includes a base, a die attached to the base, a lead and a connector electrically connecting the lead to the die. A mold compound encapsulates the die, the connector, at least part of the base, and part of the lead, so that the lead extends outward from the mold compound. An electrical insulation layer separate from the mold compound is attached to a surface of the mold compound over the connector. The electrical insulation layer has a fixed, defined thickness so that the package has a guaranteed minimum spacing between an apex of the connector and a surface of the electrical insulation layer facing away from the connector.

Abstract: In a preferred embodiment, a wiring board with embedded device and electromagnetic shielding includes a semiconductor device, a core layer, a shielding lid, shielding slots and build-up circuitry. The build-up circuitry covers the semiconductor device and the core layer. The shielding slots and the shielding lid are electrically connected to at least one ground contact pad of the semiconductor device by the build-up circuitry and can respectively serve as effective horizontal and vertical electromagnetic shields for the semiconductor devices.

Abstract: Embodiments of the present invention provide a wiring substrate having a structure where a plurality of projection electrodes are arranged within an electrode formation region on a substrate main surface. At least one among a plurality of the projection electrodes is a variant projection electrode which has a recess portion on an upper surface, an outer diameter at the upper end that is larger than an outer diameter at the lower end, and a reverse trapezoidal cross-section shape. Embodiments of the present invention also provide methods for manufacturing wiring substrates having one or more of said variant projection electrode.

Abstract: A multi-die stack structure including N dies stacked vertically is described. N is an integer larger than or equal to 2. Each die includes N die-specific input pads, wherein a specific pad among the N pads is for the input of the die. The specific pad of each die above the bottom die is electrically connected with a different pad of the bottom die other than the specific pad of the bottom die, via at least one TSV and, when not being in the die neighboring to the bottom die, also via a different pad of each underlying die above the bottom die. The specific pad of the bottom die is electrically connected with at least one pad of the overlying die(s) that is not the specific pad of any overlying die and not any pad electrically connected with the specific pad of any overlying die.

Abstract: A semiconductor device includes a semiconductor chip, the semiconductor chip including a substrate, a multilayer interconnect layer formed over the substrate, an outer peripheral cell column disposed along an edge of the substrate in a plan view, the outer peripheral cell column having at least one first I/O cell, and an inner peripheral cell column formed at an inner peripheral side of the outer peripheral cell column, the inner peripheral cell column having at least one second I/O cell.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a peripheral interconnect having a bond finger and a contact pad with a trace in direct contact with the bond finger and the contact pad, the bond finger vertically offset from the contact pad; connecting an integrated circuit die and the bond finger; and forming a module encapsulation on the integrated circuit die, the bond finger and the trace exposed from the module encapsulation.

Abstract: A wiring board includes a first multilayer wiring board having first conductive layers and having a surface, a second multilayer wiring board having second conductive layers and positioned such that the second multilayer wiring board has a surface facing the surface of the first multilayer wiring board, and an adhesive layer including an adhesive sheet and interposed between the first multilayer wiring board and the second multilayer wiring board such that the adhesive layer is adhering the first multilayer wiring board and the second multilayer wiring board. The first multilayer wiring board has a first pad on the surface of the first multilayer wiring board, the second multilayer wiring board has a second pad on the surface of the second multilayer wiring board, and the first pad and the second pad are positioned such that the first pad and the second pad face each other across the adhesive layer.

Abstract: A semiconductor apparatus includes a semiconductor die having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a semiconductor package substrate by a plurality of conductive contacts. A plurality of discrete metal planes is disposed at the uppermost metallization layer of the semiconductor package substrate, each metal plane located, from a plan view perspective, at a corner of a perimeter of the semiconductor die. Microstrip routing is disposed at the uppermost metallization layer of the semiconductor package substrate, from the plan view perspective, outside of the perimeter of the semiconductor die.

Abstract: Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.

Abstract: A semiconductor integrated circuit device includes: a rectangular shaped semiconductor substrate; a metal wiring layer formed on or over the semiconductor substrate; and a passivation layer covering the metal wiring layer. A corner non-wiring region where no portion of the metal wiring layer is formed is disposed in a corner of the semiconductor substrate. A slit is formed in a portion of the metal wiring layer which is close to the corner of the semiconductor substrate. The passivation layer includes a first passivation layer which is formed on the metal wiring layer and a second passivation layer which is formed on the first passivation layer. The first passivation layer is formed of a material that is softer than a material of the second passivation layer.

Abstract: According to one exemplary embodiment, an overmolded package includes a component situated on a substrate. The overmolded package further includes an overmold situated over the component and the substrate. The overmolded package further includes a wirebond cage situated over the substrate and in the overmold, where the wirebond cage surrounds the component, and where the wirebond cage includes a number of wirebonds. The wirebond cage forms an EMI shield around the component. According to this exemplary embodiment, the overmolded package further includes a conductive layer situated on a top surface of the overmold and connected to the wirebond cage, where the conductive layer forms an EMI shield over the component.

Abstract: Some embodiments include methods in which first insulative material is formed across a memory region and a peripheral region of a substrate. An etch stop structure is formed to have a higher portion over the memory region than over the peripheral region. A second insulative material is formed to protect the lower portion of the etch stop structure, and the higher portion is removed. Subsequently, at least some of the first and second insulative materials are removed. Some embodiments include semiconductor constructions having a first region with first features, and a second region with second features. The first features are closer spaced than the second features. A first insulative material is over the second region and an insulative structure is over the first insulative material. The structure has a stem joined to a bench. The bench has an upper surface, and the stem extends to above the upper surface.

Abstract: A land grid array (LGA) package including a substrate having a plurality of lands formed on a first surface of the substrate, a semiconductor chip mounted on a second surface of the substrate, a connection portion connecting the semiconductor chip and the substrate, and a support layer formed on part of a surface of a first land.

Abstract: Methods for manufacturing multiple bottom port, surface mount microphones, each containing a micro-electro-mechanical system (MEMS) microphone die, are disclosed. Each surface mount microphone features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphones are manufactured from panels of substrates, sidewall spacers, and lids. Each MEMS microphone die is substrate-mounted and acoustically coupled to the acoustic port disposed in the substrate. The panels are joined together, and each individual substrate, sidewall spacer, and lid cooperate to form an acoustic chamber for its respective MEMS microphone die. The joined panels are then singulated to form individual MEMS microphones.

Abstract: A semiconductor module having a second semiconductor package 200 mounted on a first semiconductor package 100, wherein the first semiconductor package 100 includes: pads 15 formed on the top surface of the first semiconductor package 100; external connection terminals 2 formed on the underside of the first semiconductor package 100, and vias 18 electrically connecting the pads 15 and the connection terminals 2. In a radiographic plane viewed in a vertical direction relative to one surface of a second substrate 25 of the second semiconductor package 200, the via 18 overlaps one of the pad 15 and the connection terminal 2, the pad 15 and the connection terminal 2 overlap each other, and the pad 15 has the center position outside the connection terminal 2.

Abstract: A routing layer for a semiconductor die is disclosed. The routing layer includes traces interconnecting integrated circuit bond-pads to UBMs. The routing layer is formed on a layer of dielectric material. The routing layer includes conductive traces arranged underneath the UBMs as to absorb stress from solder bumps attached to the UMBs. Traces beneath the UBMs protect parts of the underlying dielectric material proximate the solder bumps, from the stress.

Abstract: A substrate includes a base member having a predetermined thickness, and an electrode array provided in one surface in a thickness direction of the base member and having a plurality of electrodes arranged two-dimensionally in a plan view, and the electrode array includes a central portion and an incremental region provided around the central portion in the planar view and is formed so that a height of the electrodes in the incremental region gradually increase as approaching toward the central portion.

Abstract: A light emitting diode package including a package body with a cavity, a plurality of light emitting diode (LED) chips in the cavity, a plurality of wires connected to the plurality of LED chips, and a plurality of lead frames in the package body, wherein the lead frames comprise a first lead frame electrically connected to a first electrode of a first LED chip, a second lead frame electrically connected to a second electrode of the first LED chip and a second electrode of a second LED chip, a third lead frame electrically connected to a first electrode of the second LED chip, and fourth lead frame electrically connected to a second electrode of a third LED chip. Further, ends of the lead frames are exposed outside of the package body and penetrate the package body, and the first electrodes are P electrodes and the second electrodes are N electrodes.

Abstract: A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. The semiconductor further comprises an isolation layer disposed over the redistribution layer, the isolation layer having a first opening forming a first pad area and a first interconnect located in the first opening and in contact with the first redistribution line. The redistribution line in the first pad area is arranged orthogonal to a first direction to a neutral point of the semiconductor device.

Abstract: A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

Abstract: A top-port, surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a sidewall spacer and a lid with an acoustic port, and the MEMS microphone die is lid-mounted and acoustically coupled to the acoustic port. The substrate, the sidewall spacer, and the lid are joined together to form the MEMS microphone, and the substrate, the sidewall spacer, and the lid cooperate to form an acoustic chamber for the lid-mounted MEMS microphone die.

Abstract: A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a sidewall spacer and a lid, and the MEMS microphone die is substrate-mounted and acoustically coupled to the acoustic port in the substrate. The substrate, the sidewall spacer, and the lid are joined together to form the MEMS microphone, and the substrate, the sidewall spacer, and the lid cooperate to form an acoustic chamber for the substrate-mounted MEMS microphone die.

Abstract: A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1:

Abstract: Methods for forming a DSA pre-patterned semiconductor transistor layout and the resulting devices are disclosed. Embodiments may include forming a pre-patterned transistor layout by directed self-assembly (DSA), forming a metal layer over the DSA pre-patterned transistor layout, including: forming a plurality of horizontal metal lines; and forming a plurality of vertical metal segments discontinuous from and between adjacent horizontal metal lines; and forming one or more bridging dots each connecting one of the plurality of horizontal metal lines to one of the plurality of vertical metal segments, wherein locations of the bridging dots determine logic functions of resulting transistor cells.

Abstract: The present invention relates to a surface mount package for a micro-electro-mechanical system (MEMS) microphone die and methods for manufacturing the surface mount package. The surface mount package uses a limited number of components that simplifies manufacturing and lowers costs. The surface mount package features a substrate that performs functions for which multiple components were traditionally required, including providing an interior surface on which the MEMS microphone die is mechanically attached, providing an interior surface for making electrical connections between the MEMS microphone die and the package, and providing an exterior surface for surface mounting the microphone package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The microphone package has a substrate with metal pads on its top and bottom surfaces, a sidewall spacer, and a lid.

Abstract: A printed circuit board is disclosed having coextensive electrical connectors and contact pad areas. Areas of the contact pads where the traces and/or vias are located may be etched away to ensure electrical isolation between the traces, vias and contact pads.

Abstract: An interconnection structure includes: first and second differential signal interconnections provided to transmit a differential signal; and first and second voltage interconnections applied with predetermined voltages. The first voltage interconnection, the first differential signal interconnection, the second differential signal interconnection and the second voltage interconnection are arranged in this order. An interval between the first and second differential signal interconnections is longer than an interval between the first voltage interconnection and the first differential signal interconnection and is longer than an interval between the second differential signal interconnection and the second voltage interconnection.

Abstract: A method for forming patterns of dense conductor lines and their contact pads is described. Parallel base line patterns are formed over a substrate. Each of the base line patterns is trimmed. Derivative line patterns and derivative transverse patterns are formed as spaces on the sidewalls of the trimmed base line patterns, wherein the derivative transverse patterns are formed between the ends of the derivative line patterns and adjacent to the ends of the trimmed base line patterns. The trimmed base line patterns are removed. At least end portions of the derivative line patterns are removed, such that the derivative line patterns are separated from each other and all or portions of the derivative transverse patterns become patterns of contact pads each connected with a derivative line pattern.

Abstract: In one embodiment, a semiconductor chip package includes an insulation frame having an opening part formed in a center thereof and a via hole formed around the opening part; a semiconductor chip disposed cm the opening part; a conductive part filling the via hole; an inner insulation layer formed on bottom surfaces of the semiconductor chip and the insulation frame so as to expose a bottom surface of the conductive part; and an inner signal pattern formed on the inner insulation layer and electrically connecting the semiconductor chip and the conductive part. Embodiments also relate to a semiconductor module including a vertical stack of a plurality of the semiconductor chip packages, and to a method for manufacturing the same.

Abstract: The present disclosure is directed to orientation-independent device configuration and assembly. An electronic device may comprise conductive pads arranged concentrically on a surface of the device. The conductive pads on the device may mate with conductive pads in a device location in circuitry. Example conductive pads may include at least a first circular conductive pad and a second ring-shaped conductive pad arranged to concentrically surround the first conductive pad. The concentric arrangement of the conductive pads allows for orientation-independent placement of the device in the circuitry. In particular, the conductive pads of the device will mate correctly with the conductive pads of the circuitry regardless of variability in device orientation. In one embodiment, the device may also be configured for use with fluidic self-assembly (FSA). For example, a device housing may be manufactured with pockets that cause the device to attain neutral buoyancy during manufacture.

Abstract: A microelectronic package includes a subassembly including a first substrate and first and second microelectronic elements having contact-bearing faces facing towards oppositely-facing first and second surfaces of the first substrate and each having contacts electrically connected with the first substrate. The contact-bearing faces of the first and second microelectronic elements at least partially overlie one another. Leads electrically connect the subassembly with a second substrate, at least portions of the leads being aligned with an aperture in the second substrate. The leads can include wire bonds extending through an aperture in the first substrate and joined to contacts of the first microelectronic element aligned with the first substrate aperture. In one example, the subassembly can be electrically connected with the second substrate using electrically conductive spacer elements.

Abstract: A semiconductor package includes: a metal plate including a first surface, a second surface and a side surface; a semiconductor chip on the first surface of the metal plate, the semiconductor chip comprising a first surface, a second surface and a side surface; a first insulating layer that covers the second surface of the metal plate; a second insulating layer that covers the first surface of the metal plate, and the first surface and the side surface of the semiconductor chip; and a wiring structure on the second insulating layer and including: a wiring layer electrically connected to the semiconductor chip; and an interlayer insulating layer on the wiring layer. A thickness of the metal plate is thinner than that of the semiconductor chip, and the side surface of the metal plate is covered by the first insulating layer or the second insulating layer.

Abstract: A clock transmission adjusting method applied to integrated circuit design is provided. The clock transmission adjusting method includes the following steps. At first, a timing path including a clock source and a sequential logic cell is provided. Then, at least one non-active wire delay module is inserted in the timing path to approach a predetermined clock arrival time. An integrated circuit structure utilizing the clock transmission adjusting method is also provided.

Abstract: A method for forming CA power rails using a three mask decomposition process and the resulting device are provided. Embodiments include forming a horizontal diffusion CA power rail in an active layer of a semiconductor substrate using a first color mask; forming a plurality of vertical CAs in the active layer using second and third color masks, the vertical CAs connecting the CA power rail to at least one diffusion region on the semiconductor substrate, spaced from the CA power rail, wherein each pair of CAs formed by one of the second and third color masks are separated by at least two pitches.

Abstract: Disclosed herein is a deformable network structure, which includes a first device portion, a second device portion and at least one connector interconnecting between the first device portion and the second device portion. Moreover, the second device portion can be electrically connected to the first device portion through one of the connectors. The first and second device portions respectively have a first and a second center. Each of the connectors may be deformable from an initial state to a final state, such that a first distance between the first and second centers in the final state varies by at least 10% of a second distance between the first and second centers in the initial state.

Abstract: Provided is a downsized semiconductor device having high reliability. A plurality of recessed portions (2) each having an inverted pyramid shape are formed in a semiconductor chip placing region (3) provided on a surface of an island portion (1) on which a semiconductor chip is to be mounted. The recessed portions (2) are arranged so that at least one side of the recessed portion (2) having an inverted pyramid shape faces in parallel to the periphery of the rectangular semiconductor chip placing region (3), which is closest thereto, and the corner of the recessed portion (2) opposite to the side faces the inner side of the semiconductor chip placing region (3).

Abstract: A package stack structure may an upper package include an upper package substrate having a first edge and a second edge opposite to the first edge. The upper package substrate has a first region arranged near the first edge and a second region arranged near the second edge. A first upper semiconductor device is mounted on the upper package substrate. The package stack structure may also include a lower package having a lower package substrate and a lower semiconductor device. The lower package is connected to the upper package through a plurality of inter-package connectors. The plurality of the inter-package connectors may include first inter-package connectors configured to transmit data signals; second inter-package connectors configured to transmit address/control signals; third inter-package connectors configured to provide a supply voltage for an address/control circuit; and fourth inter-package connectors configured to provide a supply voltage for a data circuit.

Abstract: An electrical connection structure for an integrated circuit chip includes a through via provided in a opening and a laterally adjacent void that are formed in a rear face of a substrate die. A front face of the substrate die includes integrated circuits and a layer incorporating a front electrical interconnect network. The via extends through the substrate die to reach a connection portion of the front electrical interconnect network. An electrical connection pillar made of an electrically conductive material is formed on a rear part of the electrical connection via above the void. A local external protection layer may at least partly cover the electrical connection via and the electrical connection pillar.

Abstract: A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. Conductive plugs may interconnect a bond pad and one of the conductive layers.

Abstract: A semiconductor device includes a wiring substrate having first and second connection pads on a main surface thereof, a first semiconductor chip having first electrode pads, a second semiconductor chip having second electrode pads each of which has a size smaller than that of each of the first electrode pads, first wires connecting the first electrode pads with the first connection pads, and second wires connecting the second electrode pads with the second connection pads. The second wires have wide width parts at first ends. The first electrode pads are larger than the wide width parts while the second electrode pads are smaller than the wide width parts. The wide width parts are connected the second connection pads and the second wires have second ends connected to the second electrode pads via bump electrodes which are smaller than the second electrode pads.

Abstract: The amount of gold required for bonding a semiconductor die to an electronic package is reduced by using a sheet preform tack welded to the package prior to mounting the die. The preform, only slightly larger than a semiconductor die to be attached to the package, is placed in the die bond location and tack welded to the package at two spaced locations.

Abstract: A stacked microelectronic assembly includes a dielectric element and a first and second microelectronic element stacked one on top of the other with the first microelectronic element underlying at least a portion of the second microelectronic element. The first microelectronic element and the second microelectronic element have front surfaces on which exposed on a central region of the front surface are contacts. A spacer layer may be provided under a portion of the second microelectronic element opposite a portion of the second microelectronic element overlying the first microelectronic element. Additionally, a third microelectronic element may be substituted in for the spacer layer so that the first microelectronic element and the third microelectronic element are underlying opposing sides of the second microelectronic element.