Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

Abstract: Disclosed are a transistor assembly, an organic light emitting display panel including the same, and an organic light emitting display device including the organic light emitting display panel, in which a first electrode of a switching transistor is used as a gate of a driving transistor.

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

Abstract: The disclosure generally relates to power over fiber technology configured to provide electrical power and communications via fiber to one or more sensors of one or more varieties. More particularly, the disclosure relates to a sensor system comprising a laser data module operatively connected to a powered sensor module, wherein the powered sensor module receives a light, converts the light to electrical power, and powers a sensor with the electrical power, and wherein the powered sensor module transmits signals from the sensor to a laser data module.

Abstract: The present disclosure relates to a method of manufacturing a quantum dot having a tunable and narrow light emission wavelength for achieving a high color purity, which for example includes preparing a mixture by dissolving an indium precursor and a zinc precursor in an acid, forming an In(Zn)P-based core by adding a phosphorus compound to the mixture, forming a first shell coated on the In(Zn)P-based core by adding a selenium compound and the zinc precursor to the mixture, and forming a second shell coated on the first shell by adding a sulfur compound and the zinc precursor to the mixture and in which the first shell is formed of ZnSe and the second shell is formed of ZnS.

Abstract: A light emitting device is disclosed. The light emitting device includes a mounting board, one or more light emitting elements arranged on the mounting board, a frame disposed to surround the one or more light emitting elements, and a light transmissive member encapsulating an area surrounded by the frame. The frame has an inner perimeter that includes at least a pair of opposing sides and four acute-angled portions each provided at each end of the pair of opposing sides, in a plan view.

Abstract: The present disclosure provides an OLED display panel and a method for manufacturing the same. The OLED display panel includes an anode electrode layer, an anode electrode modifying layer, a first common layer, a light-emitting layer, a second common layer, and a cathode electrode layer. The anode electrode modifying layer is formed from an azobenzene-based compound. The azobenzene-based compound includes at least one functional group for transporting holes and at least one functional group for increasing solubility of the azobenzene-based compound in an organic solvent. In addition, the anode electrode modifying layer has a three-dimensional embossment grating structure.

Abstract: An optoelectronic module that includes a reflectance member which exhibits mitigated or eliminated fan-out field-of-view overlap can be concealed or its visual impact minimized compared to a host device in which the optoelectronic module is mounted. In some instances, the reflectance member can be implemented as a plurality of through holes and in other instances the reflectance member may be a contiguous spin-coated polymeric coating. In general, the reflectance member can be diffusively reflective to the same particular wavelengths or ranges of wavelengths as the host device in which it is mounted.

Abstract: The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.

Abstract: An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.

Abstract: A light-emitting device includes a mounting board, a first wiring, a plurality of light-emitting elements, a first light-transmissive member, and a second wiring. The first wiring includes a plurality of electrodes which are disposed away from each other on the mounting board. The plurality of light-emitting elements is provided on the mounting board and is electrically connected to the first wiring. The first light-transmissive member is disposed above the plurality of light-emitting elements. The second wiring is disposed on a lower surface of the first light-transmissive member and electrically connects between electrodes among the plurality of electrodes of the first wiring.

Abstract: A sensory-and-logic system comprises an illumination source configured to emit a blood-sensing light, a window through which the blood-sensing light passes en route to human tissue, an illumination receiver configured to measure the blood-sensing light reflected back through the window from the human tissue, a frame surrounding the window and elevating away from the window, and a pillow surrounding the frame and recessing from the frame and the window.

Abstract: A semiconductor module includes a photocoupler, a gate driving IC, and a switching element, and at least one of a first structure and a second structure, wherein the first structure is a structure where in a part of a surface of a first lead frame joined to a bottom surface electrode of a light-emitting element, a first conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-emitting element, and the first conductive layer are electrically connected by a wire, and the second structure is a structure where in a part of a surface of a second lead frame joined to a bottom surface electrode of a light-receiving element, a second conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-receiving element, and the second conductive layer are electrically connected by a wire.

Abstract: An imaging apparatus includes a plurality of unit circuits connected to a detection line, and a signal output circuit. Each of the plurality of unit circuits includes a light receiving device including an electrode connected to a wire and an electrode, and a transistor that controls electrical connection between the electrode and the detection line. The signal output circuit includes a light receiving device in a light-blocking state including an electrode connected to a wire and an electrode, and a detection circuit that outputs a detection signal according to a potential of a detection point between the electrode and the electrode when the light receiving device and the light receiving device are in a reverse bias state between the wire and the wire.

Abstract: A novel compound for improving the power efficiency and the lifespan of a light-emitting element, and a light-emitting element and an electronic device including the same are provided. And the new compound may provide excellent light-emitting efficiency and extended lifespan, and may improve thermal stability (heat resistance) for the electronic device.

Abstract: A laminated illuminating glazing unit includes a first sheet with a first main face, a second main face and an edge face, a second sheet with a first main face, a second main face and an edge face; a transparent lamination interlayer making adhesive contact with the second main face of the first sheet and with the first main face of the second sheet; a strip of light-emitting diodes (LEDs), including a printed circuit board and a plurality of LEDs, positioned so that the emitting faces of the LEDs face the edge face of the first sheet; and one or more scattering elements, wherein the lamination interlayer includes, on at least one of its main faces, an opaque masking layer extending from the edge of the interlayer toward the center of the glazing unit so as to cover a zone in which the light from the LEDs would, in the absence of the opaque masking layer, be visible, in the form of luminous halos, through the second sheet.

Abstract: Devices and methods of forming the devices are disclosed. The device includes a substrate and a color LED pixel disposed on the substrate. The color LED pixel includes a red LED, a green LED and a blue LED. Each of the color LED includes a specific color LED body disposed on the respective color region on the substrate, a specific color multiple quantum well (MQW) on the respective color LED body and a specific color top LED layer disposed over the respective color MQW. The MQWs of the red LED, green LED and blue LED includes at least an indium gallium nitride (InxGa1?xN) layer and a gallium nitride (GaN), where x is the atomic percentage of In in the InxGa1?xN layer, and the MQWs of the red LED, green LED and blue LED have different bandgaps by varying x of the InxGa1?xN layer in the red LED, the green LED and the blue LED.

Abstract: A display pixel suitable for being arranged on a carrier is provided. The display pixel includes a plurality of light-emitting diode chips. The light-emitting diode chips are disposed on and electrically connected to the carrier. Each of the light-emitting diode chips respectively serves as a sub-pixel and includes a semiconductor device layer, and the semiconductor device layer includes a display light-emitting mesa and at least one redundant light-emitting mesa. During a period of driving each of the light-emitting diode chips, one of the display light-emitting mesa and the at least one redundant light-emitting mesa in each of the light-emitting diode chips is capable of emitting light. A display panel including a plurality of the display pixels mentioned above is also provided.

Abstract: An electronic component device includes a first electronic component, a second electronic component disposed on and connected to the first electronic component, a first underfill resin filled between the first electronic component and the second electronic component, the first underfill resin having a base part arranged around the second electronic component and an alignment mark formed on an upper surface of the base part, a third electronic component disposed on and connected to the second electronic component, and a second underfill resin filled between the second electronic component and the third electronic component.

Abstract: A semiconductor light source comprising first and second light-emitting diode chips; and a conversion element containing a first phosphor and a second phosphor, wherein the conversion element is disposed downstream of the first and second light-emitting diode chips. The first light-emitting diode chip emits electromagnetic radiation with a first emission maximum. The second light-emitting diode chip emits electromagnetic radiation with a second emission maximum. The first phosphor has a first absorption maximum and a first radiating maximum. The second phosphor has a second absorption maximum, which differs from the first absorption maximum, and a second radiating maximum, which differs from the first radiating maximum. The degree of conversion of the first phosphor for the electromagnetic radiation of the first light-emitting diode chip is greater than the degree of conversion of the second phosphor for the electromagnetic radiation of the first light-emitting diode chip.

Abstract: Provided are a novel compound and an organic electronic device (OED) including the same. The novel compound has better hole injection and hole transport properties than a conventional material, and thus may enhance thermal stability and efficiency when used as a material for a hole injection or hole transport layer of the OED.

Abstract: A proximity sensing device having an emitter die, a receiver die, a body is disclosed. The proximity sensor has an optical structure provided on the body. The optical structure may provide an optical path to allow radiation reflected by a near object that may be otherwise blocked by the body to be transmitted towards the receiver die. In addition to the proximity-sensing device, a sensing device having at least two trenches that allow close proximity sensing is disclosed. A method for sensing an object that involve determining whether the object correspond to a near object or a far object is presented.

Abstract: Exemplary methods and systems use a micro light emitting diode (LED) in an active matrix display to emit light and a sensing IR diode to sense light. A display panel includes a display substrate having a display region, an array of subpixel circuits, and an array of selection devices. Each subpixel circuit includes a driving circuit to operate a corresponding infrared (IR) emitting LED in a light emission mode. Each selection device may be coupled to a corresponding sensing IR diode to operate the corresponding sensing IR diode in a light sensing mode.

Abstract: This invention relates to a radioisotope battery and a method of manufacturing the same, wherein manufacturing the radioisotope battery and shielding radiation emitted from the radioisotope Ni-63 from the outside are achieved simultaneously. This radioisotope battery includes a semiconductor layer, a seed layer formed on the semiconductor layer, a radioisotope layer formed on the seed layer, and a radiation shielding layer formed on the radioisotope layer and for shielding radiation of the radioisotope layer form the outside.

Abstract: A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer.

Abstract: An optoelectronic device including a substrate having a first site, a second side opposite to the first side, and an outer boundary; a light emitting unit formed on the first side; a first electrode electrically connected to the light emitting unit; a second electrode electrically connected to the light emitting unit; and a heat dissipation pad formed between the first electrode and the second electrode and electrically insulated from the light emitting unit.

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over an active surface of the semiconductor die. A plurality of first conductive traces with interconnect sites is formed over a substrate. The bumps are wider than the interconnect sites. A surface treatment is formed over the first conductive traces. A plurality of second conductive traces is formed adjacent to the first conductive traces. An oxide layer is formed over the second conductive traces. A masking layer is formed over an area of the substrate away from the interconnect sites. The bumps are bonded to the interconnect sites so that the bumps cover a top surface and side surface of the interconnect sites. The oxide layer maintains electrical isolation between the bump and second conductive trace. An encapsulant is deposited around bumps between the semiconductor die and substrate.

Abstract: An illuminating glazing unit for a vehicle includes a first sheet made of mineral or organic glass, a peripheral light source with a support profiled member referred to as source support, the emitting region or face of the source facing the edge face, referred to as injection face, of the first sheet for a propagation of the injected light within the thickness of the first sheet, the first sheet then playing the role of guide for the injected light, a device of extraction of the guided light so as to form at least one illuminating region, the source support being within an accommodation surrounded by material and covered by a cover, the cover and the source support being removable from the glazing unit.

Abstract: A direct-conversion x-ray detector or x-ray detector module includes: a direct converter; at least one collimator; and at least one radiation source. The at least one collimator is arranged in a direction of radiation of the x-ray radiation in front of the direct converter, and to restrict direct irradiation of the direct converter by the x-ray radiation. The at least one radiation source is at a side of the direct converter, and configured to irradiate the direct converter with additional radiation. The at least one collimator includes: at least one reflection layer on a side facing the direct converter, and configured to reflect the additional radiation onto the direct converter; and a cooling facility configured to cool the at least one radiation source.

Abstract: An organic light emitting display device and manufacturing method thereof are disclosed. One inventive aspect includes a first substrate, a second substrate, a pixel unit, a circuit unit, a sealing member and a radiation unit. The pixel unit is formed on the first substrate and comprises an organic light emitting device and a thin-film transistor (TFT). The radiation unit includes radiation fins formed in the sealing member and a radiation layer contacting first ends of the radiation fins.

Abstract: An organic light emitting diode (OLED) display device in which an oxide-based semiconductor is used as an active layer of a TFT and the fabrication method thereof are provided. In the OLED display device, the active layer is formed at an upper portion of the gate electrode and a source electrode is patterned to completely cover the channel region of the active layer, to block light introduced from upper and lower portions of the active layer, thereby improving reliability of the oxide TFT.

Abstract: A method for producing a plurality of optoelectronic semiconductor components in combination is specified. A plurality of radiation-emitting and radiation-detecting semiconductor chips are applied on a carrier substrate. The semiconductor chips are potted with a respective potting compound. The potting compounds are subsequently severed by sawing between adjacent semiconductor chips. A common frame is subsequently applied to the carrier substrate The common frame has a plurality of chambers open toward the top. The frame is arranged in such a way that a respective semiconductor chip is arranged in a respective chamber of the frame. A semiconductor component produced in such a way and the use of the semiconductor component are furthermore specified.

Abstract: An illuminating glazing unit includes a first sheet having a first main face, a second main face and an edge face; a second sheet having a first main face, a second main face and an edge face; a lamination interlayer having an extent smaller than that of each of the glass sheets and defining a space between the edge of the second main face of the first sheet and the edge of the first main face of the second sheet; a strip of LEDs, including a printed circuit board and a plurality of LEDs, positioned so that the emitting faces of the LEDs face the edge face of the first sheet; and an encapsulating element made of an opaque polymer encapsulating at least the edge face of the second sheet and the LED strip. The PCB bears against the first main face of the second glass sheet with a plurality of spacers and the space is filled by the opaque polymer.

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract: An organic light emitting device includes a cathode made of metal, at least one organic material layer including a light emitting layer, and an anode in the sequentially layered form. The organic light emitting device also includes a thin metal film that is interposed between the cathode and the organic material layer.

Abstract: Disclosed is a single-chip twin light source light emitting device including a first epitaxial layer, a substrate, and a second epitaxial layer. The first epitaxial layer includes a first n-type semiconductor layer with a n-type conducting structure, a first light emitting layer with a multi-quantum well structure, and a first p-type semiconductor layer with a p-type conducting structure. The second epitaxial layer includes a second n-type semiconductor layer with a n-type conducting structure, a second light emitting layer with a multi-quantum well structure, and a second p-type semiconductor layer with a p-type conducting structure. Therefore, the light emitting device can emit one-color or two-color light by controlling the first epitaxial layer and the second epitaxial layer respectively.

Abstract: An optical receiver device including: a light-receiving element having a first electrode acting as an outputting electrode and a second electrode coupled to a potential that is different from a ground potential; an amplifier device having an amplifier element, a connection terminal including a signal electrode and a ground electrode on an upper face thereof; a first conductor coupling a potential of the first electrode of the light-receiving element to the signal electrode, the first conductor being introduced from the upper face side of the amplifier device; and a second conductor coupling a potential of the second electrode of the light-receiving element to the ground electrode, the second conductor introduced from the upper face side of the amplifier device.

Abstract: A light-emitting assembly and a method for manufacturing the same are provided. The light-emitting assembly includes a circuit board with a light-emitting element and a plurality of optical microstructures disposed thereon. The optical microstructures adjacent to the light-emitting element absorb or guide a portion of light emitted from the light-emitting element.

Abstract: To inhibit surface reflection of a display device. A display device which includes a reflective electrode layer 110; a partition 118 formed to surround the reflective electrode layer; a layer 120 containing a light-emitting organic compound and formed over the partition and the reflective electrode layer; a semi-transmissive electrode layer 122 formed over the layer containing the light-emitting organic compound; and a coloring layer 162 formed over the semi-transmissive electrode layer. The coloring layer overlaps with the reflective electrode layer and the partition. The partition does not overlap with the reflective electrode layer.

Abstract: An optical apparatus includes a substrate 1, a wiring pattern 8 formed on the substrate 1, a light-receiving element 3 and a light-emitting element 2 provided on the substrate 1 and spaced apart from each other in a direction x, a light-transmitting resin 4 covering the light-receiving element 3, a light-transmitting resin 5 covering the light-emitting element 2, and a light-shielding resin 6 covering the light-transmitting resin 4 and the light-transmitting resin 5. The wiring pattern 8 includes a first light-blocking portion 83 interposed between the light-shielding resin 6 and the substrate 1 and positioned between the light-receiving element 3 and the light-emitting element 2 as viewed in x-y plane. The first light-blocking portion 83 extends across the light-emitting element 2 as viewed in the direction x.

Abstract: A light-emitting device comprising (a) a submount having front and back sides and including a ceramic layer; (b) an array of light-emitting diodes (LEDs) on the front side; and (c) a lens overmolded on the submount and covering the LED array. In some embodiments, the submount comprises at least two electrically-conductive contact pads on the front side, and each LED in the array is secured with respect to one of the contact pads.

Abstract: Embodiments provide a light emitting device package including a package body having a top-opened cavity disposed in at least a portion thereof, a first electrode layer and a second electrode layer electrically isolated from the package body with an insulating layer interposed therebetween, the first electrode layer and the second electrode layer being electrically isolated from each other at a bottom surface of the cavity, a light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity, and a sensor placed on at least a portion of the package body at the outside of the cavity configured to measure output of the light emitting device.

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to an optical package that includes a stacked arrangement with a plurality of optical devices arranged over an image sensor processor die that is coupled to a first substrate. Between the two optical devices and the image sensor processor die there is provided at least a second substrate. In one embodiment, the optical package is a proximity sensor package and the optical devices include a light-emitting diode die and a light-receiving diode die. In one embodiment, the light-emitting diode die is secured to a surface of the second substrate and the light-receiving diode die is secured to a surface of a third substrate. The second and the third substrate may be secured to a surface of the image sensor processor die or to a surface of encapsulation material.

Abstract: Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part.

Abstract: Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

Abstract: Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Abstract: An electronics assembly includes a semiconductor die assembly, an enclosure affixed to the semiconductor die assembly, the enclosure defining first and second chambers over the semiconductor die assembly, and first and second optical elements mounted in the first and second chambers, respectively. The semiconductor die assembly includes a semiconductor die encapsulated in a molded material, an encapsulation layer located on the top surface of the semiconductor die, and at least one patterned metal layer and at least one dielectric layer over the encapsulation layer. Conductive pillars extend through the encapsulation layer for electrical connection to the semiconductor die. The encapsulation layer blocks optical crosstalk between the first and second chambers. A method is provided for making the electronics assembly.

Abstract: Embodiments of the invention pertain to a method and apparatus for sensing infrared (IR) radiation. In a specific embodiment, a night vision device can be fabricated by depositing a few layers of organic thin films. Embodiments of the subject device can operate at voltages in the range of 10-15 Volts and have lower manufacturing costs compared to conventional night vision devices. Embodiments of the device can incorporate an organic phototransistor in series with an organic light emitting device. In a specific embodiment, all electrodes are transparent to infrared light. An IR sensing layer can be incorporated with an OLED to provide IR-to-visible color up-conversion. Improved dark current characteristics can be achieved by incorporating a poor hole transport layer material as part of the IR sensing layer.

Abstract: A luminous vehicle glazing containing: a first sheet having a first and a second main face; a peripheral light source, the emitting face facing an injection side, which is a side of the second face; a surface diffusion extractor, which extracts the guided light via the first and/or the second main face, or a volume diffusion extractor in the first sheet; a fluid-tight cap, which covers the peripheral light source and is impermeable to liquid water or water vapor, wherein the cap is a facial cap, faces the second face, joined by a fastening element, and associated with an interfacial sealing element.

Abstract: A package structure of an optical module includes: a substrate defined with a light-emitting region and a light-admitting region; a light-emitting chip disposed at the light-emitting region of the substrate; a light-admitting chip disposed at the light-admitting region of the substrate; two encapsulants for enclosing the light-emitting chip and the light-admitting chip, respectively; and a shielding layer formed on the substrate and the encapsulants and having a light-emitting hole and a light-admitting hole, wherein the light-emitting hole and the light-admitting hole are positioned above the light-emitting chip and the light-admitting chip, respectively. Accordingly, the optical module package structure simplifies a packaging process and cuts manufacturing costs.